等离子体浸没离子注入和沉积技术制备TiN薄膜研究

利用多功能等离子体浸没离子注入设备，采用等离子体浸没离子注入和沉积技术在Ti合金表面制备具有优异力学性能的TiN薄膜。研究了真空室中氮气存在状态及氮气压力对薄膜性能的影响：当氮以中性气体存在于真空室中，薄膜的生长主要受热力学因素控制，沿着低自由能的密排面(低指数面)TiN(111)择优生长；当氮以等离子体状态存在于真空室中，薄膜沿着高指数面TiN(220)择优生长，具有高硬度、耐磨性好的优点，并且随着N分压的提高，薄膜耐磨性提高。     

等离子体基离子注入制备TiN膜的成分结构

采用Ti、N等离子体基离子注入和先在基体表面沉积纯钛层然后离子注氮混合两种方法在铝合金基体上制备了TiN膜.利用XPS分析了两种方法制备TiN薄膜的成分深度分布和元素化学价态,并用力学性能显微探针测试对比了TiN膜的纳米硬度.研究表明:两种方法制备的薄膜均由TiN组成,Ti、N等离子体基离子注入薄膜中Ti/N≈1.1,而离子注入混合薄膜中Ti/N≈1.3,Ti、N等离子体基离子注入薄膜表面区域为TiN和TiO2的混合组织,TiN含量多于TiO2,离子注入混合薄膜表面主要是TiO2;Ti、N等离子体基离子注入所制备的薄膜的纳米硬度峰值为12.26 GPa,高于离子注入混合的7.98 GPa.     

工业纯铁等离子体氮化及Ti/TiN多层薄膜沉积复合处理研究

为改善工业纯铁的耐磨抗腐蚀性能,本文采用低偏压高频等离子浸没离子注入及氮化技术(HLPⅢ)对工业纯铁进行表面改性,然后利用非平衡磁控溅射技术(UBMS)在低压高频等离子浸没离子注入及氮化处理样品表面制备Ti/TiN多层膜.研究发现,工业纯铁在3.5kV脉冲电压(频率15.15kHz,占空比25%)下等离子注入及氮化3h后,表面形成了深度达4μm的氮化层,其相结构以ε-Fe_3N和γ-Fe_4N结构为主.等离子氮化及Ti/TiN多层薄膜沉积复合处理后,工业纯铁的硬度、耐磨损性能以及抗腐蚀性能均得到大大提高,等离子注入及氮化形成的氮化层有利于提高Ti/TiN多层薄膜与工业纯铁基体之间的结合力和耐磨性.     

氮等离子体浸没离子注入TC4钛合金的研究

等离子体浸没离子注入（PIII）方法由于其优异的性能,近年来受到研究人员的高度关注。本文利用等离子体浸没离子注入（PIII）技术在TC4钛合金基体上注入氮。x射线衍射（xRD）表明注入的氮以TiN的形式存在于基体表面附近,且出现了（200）择优取向。x射线光电子能谱（XPS）表明氮元素含量随剥蚀先增加后减少,与SRIM软件的模拟结果吻合。纳米硬度测试表明注氮后材料的硬度显著提高,表面纳米硬度增加108％。     

铀表面等离子体浸没离子注入沉积制备氮化层+Ti/TiN多层膜的结构与性能

为了改善金属铀的摩擦磨损和抗腐蚀性能,采用等离子体浸没离子注入沉积(PIII&D)技术在铀表面氮化,再沉积Ti/TiN多层膜.利用扫描电镜和X射线衍射分析了薄膜的形貌和组织结构;对薄膜的摩擦磨损和抗湿热腐蚀性能进行了测试.结果表明:薄膜表面致密,界面晶粒柱状生长方式被阻断,晶粒细化;薄膜为Ti和TiN的双相结构,衍射谱中出现了UO_2和U_2N_3的衍射峰;薄膜大大提高了铀基体的摩擦磨损和抗湿热腐蚀性能,调制周期对薄膜性能的影响较大.     

Ti6Al4V等离子体浸没式离子注入

采用新型等离子体浸没式离子注入技术,对Ti6Al4V合金进行氮离子注入.对注入层的成分、组织和性能的分析表明,注入层中氮浓度的分布具有类高斯分布特征,在注入层中有TiN和非晶态相形成.注入层的显微硬度和摩擦性能得到了明显的改善.     

等离子浸没离子注入沉积纳米TiN薄膜的机械性能研究

采用等离子体浸没离子注入沉积(PⅢ-D)在不锈钢基底上合成TiN薄膜。对沉积TiN薄膜后的不锈钢试样进行拉伸变形实验,扫描电子显微镜(SEM)原位观察表明在较大塑性变形量下氮化钛薄膜没有剥落和裂纹出现。采用划痕法测得薄膜与基体间有较强的结合力。薄膜的纳米压痕测试显示出很高的纳米硬度和弹性模量值。通过对合成TiN薄膜的TEM结构测试、AFM表面观察、AES成分结果分析,认为该合成薄膜的纳米级晶粒尺寸、致密的表面质量以及成分沿深度的分布是其具有优异的抗塑性变形性能以及高的结合强度的原因。     

全方位离子注入与沉积TiN薄膜的纳米压痕和纳米划擦行为

用等离子体浸没离子注入与沉积(PIIID)复合改性技术在AISI52100轴承钢基体表面合成了高硬耐磨的TiN薄膜。膜层的相组成及其表面形貌分别用X射线衍射(XRD)和原子力显微镜(AFM)表征。合成薄膜前后试样的力学性能经纳米压痕和划痕实验评价。XRD结果表明,膜层中主要存在TiN相,择优取向(200),同时含有少量TiO2和钛氮氧的化合物。AFM形貌显示出试样表面TiN呈定向排列,膜层均匀完整,结构致密。纳米压痕测试结果表明,膜层具有较高的纳米硬度和弹性模量,最大值分别达到22.5和330 GPa,较基体分别增长104.5%和50%。根据纳米划痕形貌和划痕深度随划痕位置的变化关系分析出,薄膜在纳米划擦过程中先后经历了弹性变形,弹塑性变形,加载开裂或卸载剥落三个阶段。划擦剥落抗力达到80mN,表明TiN薄膜具有很好的弹性恢复能力和较强的疲劳剥落抗力。     

9Cr18轴承钢氮等离子体浸没离子注入表面改性工艺及机理的研究

采用不同怕等离子体浸没离子注入工艺对９Ｃｒ１８轴承钢进行了氮离子注入,结果发现,不同条件下的氮离子注入均能显著提高９Ｃｒ１８钢表面的显微硬度和耐磨性,同时耐磨蚀性也明显改善。实验分析结果表明、氮离子注入后试样表面形成了大量的氮化物相,它们在改善材料表面特性中起到了关键的作用。     

工业纯铁等离子体注入与氮化工艺及其性能研究

采用低电压高频率脉冲等离子体浸没离子注入与氮化技术在工业纯铁上进行氮离子注入及氮化强化处理,研究了不同脉冲宽度下,工业纯铁等离子体浸没离子注入与氮化处理的结构及性能.通过X射线衍射谱(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、显微硬度、销-盘磨损实验,研究了工业纯铁氮离子注入及氮化后的结构、断面组织、表面元素含量、显微硬度、摩擦磨损性能;通过电化学极化方法在0.9%NaCl溶液研究了改性层的耐腐蚀性.研究结果表明:氮等离子注入及氮化后能显著提高纯铁表面的显微硬度、耐磨性和耐腐蚀性能,且表面形成结构为Fe3N和Fe4N的针状组织,针状组织是提高纯铁性能的关键因素;高脉冲宽度下进行等离子注入及氮化有利于提高纯铁表面的机械性能和耐腐蚀性能.     

Thin polymer films from polyimide vacuum thermal degradation with and without a glow discharge

Polyimide-like thin films were deposited by thermal degradation of polyimide with and without simultaneous activation by a glow discharge excited using an r.f. planar magnetron. The films deposited without discharge are similar in composition to conventional polyimide, whereas the deposition with plasma results in cross-linked coatings with composition typical for plasma polymers e.g. prepared by r.f. sputtering of polyimide. AFM reveals rough surface topography for the films evaporated without plasma. The application of plasma leads to very smooth plasma polymer films.     

Plasma polymer films from sputtered polyimide

Deposition of plasma polymer films by r.f. magnetron sputtering of polyimide in an atmosphere of argon, nitrogen and in a self-sputtering mode is studied. In situ analytical techniques are applied to monitor the composition of both plasma and growing film during the deposition. A co-evaporation regime is observed at higher applied powers. Such a regime is characterized by a significant increase in deposition rate of plasma polymer films. In addition CO-based groups appear in the plasma volume and in the resulting films. The films deposited in a pulsed mode are similar in composition to those deposited in the continuous regime at equivalent power. The plasma polymer films are found to be stable to short-term oxidation in air.     

Comparative study of (Ba,Sr)TiO3 films prepared by electron cyclotron resonance plasma sputtering and metal-organic decomposition

(Ba,Sr)TiO₃ films were prepared on Pt/Ti/SiO₂/Si substrates by mirror-confinement-type electron cyclotron resonance (ECR) plasma sputtering as well as by metal-organic decomposition (MOD). The films prepared by ECR plasma sputtering were crystallized at lower temperatures with better crystallinity and a denser structure than those by MOD. As for dielectric constant, films prepared by ECR plasma sputtering exhibited a relatively high value over 500 at a low annealing temperature of 873 K, whereas films by MOD exhibited approximately 350. This is attributed to the better crystallinity and the denser structure of the films by ECR plasma sputtering. The leakage current density of the films was found to be similar in both processes.     

等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量

用核反应分析方法,对等离子体基脉冲偏压沉积DLC膜的氢分布和氢含量进行了较系统的研究.结果表明,用等离子体基脉冲偏压沉积技术可获得较低氢含量的DLC膜;其氢含量范围约为6at％～17at％,且氢沿膜厚是均匀分布的,随等离子体密度及离化率降低,DLC膜的氢含量增加,荷能离子对生长表面的轰击具有较强的析氢作用,工作气体中引入氢气促进DLC膜中氢的析出.     

Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

Indium-tin-oxynitride (ITON) and indium-tin-oxide (ITO) thin films have been fabricated by r.f. sputtering from an indium-tin-oxide target in a plasma containing N₂ and Ar gases, respectively. The properties of films grown at two different plasma pressures were examined just after deposition and after annealing. Although the electrical properties of these films were improved after annealing, the properties of the ITON films were still inferior to those of the ITO films. The resistivity of the ITON films after annealing was reduced by a factor of two for the film at the higher plasma pressure, but the carrier concentration was almost the same. The ITON films fabricated at low pressure exhibited a significant blue shift in transmittance, which was not related to the increase carrier concentration after annealing.     

Preparation of quaternary nitrogen-containing plasma films and their application to moisture sensors

To seek the possible formation of positively charged plasma films the chemical composition of plasma films formed from organosilicones containing nitrogen (hexamethyldisilazane (HMDSZ), trimethylsilyldimethylamine (TMSDMA) and a mixture of tetramethylsilane and NH₃) was analysed by elemental analysis and IR spectroscopy, and quaternization of these films with methyl bromide was carried out. IR spectroscopic and electron spectroscopy for chemical analysis studies revealed that the plasma films from TMSDMA and the TMS-NH₃ mixture were successfully quaternized but those from HMDSZ were not. This indicates that the structural characteristics of the starting compounds exert a powerful influence on the polymer-forming process. The quaternized plasma films prepared from TMSDMA were used to prepare moisture sensor devices.     

Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O₂ plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.     

用于微机电系统的类金刚石膜制备及表征

采用等离子体源离子注入和电子回旋共振-微波等离子体辅助化学气相沉积技术相结合的方法在Si衬底上制备出了性能良好的类金刚石膜.通过共聚焦Raman光谱验证了薄膜的类金刚石特性,用原子力显微镜、微摩擦计和扫描电镜等对薄膜的表面形貌、摩擦系数和耐磨损性能进行了表征和测量.结果表明,用离子注入法制备过渡层大大提高了DLC膜与衬底的结合强度,薄膜的表面比较光滑,粗糙度大约为0.198 nm,具有较低的摩擦系数(0.1～0.15),具有较好的耐磨损性能.     

低温等离子体聚合物薄膜的研究及应用

概述了利用低温等离子体技术制备有机聚合物薄膜、主要合成方法、特性及研究现状 ,简要讨论了等离子体聚合条件对薄膜结构和性质的影响 ,介绍了现代分析技术对聚合物薄膜结构的表征 ,阐述了近年来对低温等离子体聚合物薄膜的物理性质 ,包括表面性质、渗透性、电学和光学性质等方面的研究进展 ,并描述了其在工业生产各方面的一些应用     

C_2H_2/CO/H_2O、C_2H_2/CO_2/H_2等离子体聚合物薄膜的结构、表面形态及性能的研究

用红外光谱、元素分析、电子显微镜等技术研究了C_2H_2/CO/H_2O、C_2H_2/CO_2/H_2的等离子体聚合物薄膜的结构和表面形态,广角X射线衍射实验研究其结晶情况,分析观察了这两种等离子体聚合物的溶解性和热稳定性。结果表明,这两种等离子体聚合物薄膜具有高交联、支化程度,且分子链排列完全无序。