2cm波段耿管电调振荡器

报道了采用部分集成方案研制的Ｋｕ波段变容管调谐耿管振荡器（ＶＣＯ）及两管功率合成器。研制的两只中心频率为１６和１７ＧＨＺ的电调振荡器，其中１６ＧＨＺ的电调带宽大于６４０ＭＨｚ，输出功率大于１１０ｍＷ，功率起伏小于０．６ｄＢ；而１７ＧＨｚ的电调带宽大于２３０ＭＨｚ，输出功率大于１１０ｍＷ，功率起伏小于０．９ｄＢ。两管功率合成器的振荡频率为１７．３ＧＨｚ，输出功率达２５０ｍＷ．     

Broadband electronically tunable planar active radiating elementsand spatial power combiners using notch antennas

A Gunn device has been integrated with two types of active planar notch antennas. The first types uses a coplanar waveguide (CPW) resonator an a stepped-notched antenna with bias tuning to achieve a bandwidth of 275 MHz centered at 9.33 GHz with a power output of 14.2±1.5 dBm. The second type uses a CPW resonator with a varactor for frequency tuning to achieve a bandwidth of over 1.3 GHz centered at 9.6 GHz with a power output of 14.5±0.8 dBm. This is equivalent to over 14% electronic tuning bandwidth. Both configurations exhibit a very clean and stable output signal. A theoretical circuit model was developed to facilitate the design. The model agrees well with experimental results. Injection-locking experiments on the second configuration show a locking gain of 30 dB with a locking bandwidth of 30 MHz at 10.2 GHz. Power combining experiments of two-varactor-tuned CPW active notch antenna elements in a broadside configuration have achieved well over 70% combining efficiency throughout the wide tuning range. The circuits have advantages of small size, low cost, and excellent performance     

High-performance millimetre-wave suspended stripline Gunn VCO

A novel millimetre-wave integrated circuit Gunn voltagecontrolled oscillator (VCO) has been developed with high output power using suspended stripline. An output power of 100 to 150mW has been achieved at frequencies between 33 and 42 GHz. A varactor diode was mounted in alignment and in close proximity to the Gunn diode to achieve an electronic tuning range of 300 MHz     

Integrated VCO With Up/Down Converter for Si-Based 60 GHz WPAN Applications

This letter presents the design and implementation of the largest reported bandwidth of a 60 GHz up/down converter with an integrated voltage controlled oscillator (VCO) in a low-cost 0.18 mum silicon-germanium process. The up/down conversion is achieved using the 2X sub-harmonic passive mixing with anti-parallel diode pairs. A 30 GHz cross-coupled VCO is designed, optimized and integrated with the sub-harmonic mixer through a cascode amplifier to meet the local oscillator power requirements. The fully integrated chip takes only 1.5 mm² of silicon die area and consumes only 40 mW of dc power for a measured conversion loss of 12 dB at 61.5 GHz. The integrated up/down converter is measured to have greater than 9 GHz double-sided 3-dB RF bandwidth suitable for wideband high data-rate WPAN transceiver requirements. The VCO and VCO-amplifier test structures are separately fabricated and measured to have a phase noise as low as -105 dBc/Hz at 1 MHz offset with a tuning range of 2.3 GHz.     

V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator

A$V$-band cross-coupled sub-harmonic injection-locked oscillator has been designed and fabricated using 0.15-$mu$m GaAs pHMET technology. Based on the known harmonic injecting circuit topology, this oscillator was designed by a differential output approach, a low-$Q$microstrip-line resonator, and a current mirror, which has a free-running oscillation frequency around 60GHz with a tuning range of 2.5GHz (from 57.8GHz to 60.3GHz). The maximum single-end output power is 3.8dBm with a dc dissipation of 225mW under a$-$3V supply voltage. Within the input matching network for second (30GHz) and fourth (15GHz) sub-harmonic signals injection, it demonstrates the maximum locking ranges close to 120MHz and 30MHz, respectively.     

A Millimeter-Wave 90-nm CMOS Self-Mixing Frequency Divider

This letter presents a millimeter-wave 90 nm CMOS divide-by-four frequency divider using self-mixing technique. The output of the push-push oscillator mixes with the input signal, and the resulting intermediate frequency signal locks the fundamental oscillation frequency of the oscillator at exactly one-fourth of the input signal frequency. The frequency divider is implemented in TSMC 90 nm 1P9M digital CMOS technology and the overall die size is 0.91 mm $times,$ 0.53 mm. For low-power mode, the divider consumes only 0.8 mW with a 0.8 V supply voltage, and the measured locking range is 300 MHz. For normal mode, the divider consumes 2 mW with a 1 V supply, and the locking range is extended to 1100 MHz. The operating range of the divider covers from 46.1 to 52.8 GHz with varactor tuning and band switching.      

Varactor-tuned X band Gunn oscillator using lumped thin-film circuits

The operation of a varactor-tuned oscillator using an unen-capsulated Gunn and varactor diode is described, where the associated circuit consists of lumped elements fabricated using thin-film techniques. Depending on the GaAs material, the oscillator provides output powers greater than 10 mW and a tunable 3 dB bandwidth in excess of 1 GHz. At zero varactor bias, the frequency can be set in the 7?12 GHz range. Satisfactory correlation with the theory is demonstrated.     

Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors

Fully integrated monolithic circuits incorporating InP-based heterostructure barrier varactor (HBV) frequency multipliers have been fabricated via epitaxial liftoff and transfer-substrate techniques onto a quartz substrate. We have obtained a maximum output power of 6 mW at 288 GHz: corresponding to an overall efficiency of 6%. In addition, we have observed a 45-GHz, 3-dB bandwidth centered around 300 GHz for a constant input power of 70 mW.     

A Differentially-Tuned Voltage ControlledOscillator Using Symmetric Transformer

This letter proposes a new voltage controlled oscillator (VCO) topology that cancels common-mode noise by adoption of differential tuning varactor. To suppress common mode noise effectively, a symmetric three-coil transformer is proposed as a differential tuning resonator. The measured phase noise shows -128.7 dBc/Hz at 1 MHz offset frequency from the 1.2 GHz oscillation frequency. Over the whole frequency range, common-mode noise rejection is larger than 36 dB. Measured tuning range of the proposed VCO is about 204 MHz from the 1.18 GHz to 1.38 GHz while dissipating 1.2 mA at 1.8 V power supply.     

A wide-locking range ÷3 injection-locked frequency divider using concurrent injection mechanisms

A new wide locking range divide-by-3 injection-locked frequency divider (ILFD) using a standard 0.18 μm CMOS process is presented. The ILFD uses two concurrent injection mechanisms with two independent push–push circuits to extend the locking range. It is realized with a cross-coupled n-core MOS LC-tank oscillator. The core power consumption of the ILFD core is 11.496 mW. The divider’s free-running oscillation frequency is tunable from 4.32 to 3.78 GHz by tuning the varactor’s control bias, and at the incident power of 0 dBm the maximum locking range is 3 GHz (25 %), from the incident frequency 10.5 to 13.5 GHz. The operation range is 3.6 GHz (30.76 %), from 9.9 to 13.5 GHz.     

Microwave Varactor Tuned Transistor Oscillator Design

An analysis is made of the common base microwave transistor oscillator circuit which uses a varactor in series with the colIector to tune over octave bandwidths. Equations are derived giving the required feedback capacitances and resonating elements required for octave tuning. Normally, the collector-emitter capacitance C/sub ce/ is made approximately equal to the transistor collector capacitance C/sub c/. The emitter-base capacitance C/sub eb/ is important only at very high frequencies. It is shown that a high-Q varactor must be used and that only a limited amount of collector-base capacitance C/sub cb/ may be added if the circuit is to be resonated over an octave. The output power for such a circuit is normally about 1/5 the maximum power available from the transistor. Experimental oscillators were made from 0.5 to 1 GHz and 1 to 2 GHz which substantially verified the analysis. Using the TIXS13 transistor, an output power of 200 mW was obtained from 430 to 860 MHz tuning from -2 to -115 volts. In the 1 to 2 GHz range a TIXS13 transistor oscillator was tuned from 1.09-1.96 GHz with about 40 mW power tuning from -2 to -115 volts. By use of a lower case capacitance varactor, the 1 to 2 GHz oscillator could be made to tune over the full octave.     

U-band shield suspended-stripline Gunn DRO and VCO

A millimeter-wave IC dielectric resonator oscillator (DRO) is proposed. Equations that give the resonant frequency of the dielectric resonator DR in suspended stripline (SSL) are derived. A U-band voltage-controlled oscillator (VCO) with varactor tuning also has been developed. The Gunn diode and varactor used in both of the oscillators are commercially available packaged devices. Restrictions on the performance of the oscillators imposed by packaged and mounted networks and the self-characteristics of the solid-state devices have been analyzed. An electronic tuning range greater than 1000 MHz with an output power exceeding 15 dBm across the bandwidth in the 53-GHz region has been realized for the SSL VCO. An SSL DRO with an output power of more than 17 dBm and a mechanical tuning range of 1.5 GHz in the 54-GHz region has been achieved     

V-band harmonic injection-locked frequency divider using cross-coupled FETs

A V-band 1/2 frequency divider is developed using harmonic injection-locked oscillator. The cross-coupled field effect transistors (FETs) and low quality-factor microstrip resonator are employed as a wide-band oscillator to extend the locking bandwidth. The second harmonic of free-running oscillation signal is injected to the gates of cross-coupled FETs for high-sensitivity superharmonic injection locking. The fabricated microwave monolithic integrated circuit frequency divider using 0.15-/spl mu/m GaAs pHEMT process showed a maximum locking range of 7.4 GHz (from 65.1 to 72.5 GHz) under a low power dissipation of 100 mW. The maximum single-ended output power was as high as -3 dBm.     

Performance of P-type epitaxial silicon millimeter-wave IMPATT diodes

A series of p-type IMPATT diodes (p⁺pn⁺) have been fabricated from epitaxially grown silicon for operation as oscillators at Ka-band frequencies. A maximum CW output power level of 700 mW at 29.6 GHz, a maximum conversion efficiency of 10.9 percent, and a minimum FM noise parameter, M, of 25 dB have been measured on this series of p-type diodes. A diode oscillating in a variable height radial disk cavity was frequency tuned from 27.5 to 40 GHz, covering the entire Ka-band, with a 1.4 dB power variation over the tuning range. The minimum CW output power of this tunable oscillator was 360 mW at 6.5 percent efficiency.     

GaAs Monolithic MIC's for Direct Broadcast Satellite Receivers

A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FET's as active elements and self-biasing source resistors and bypass capacitors for a single power supply operation. It also contairns dc-block and RF-bypass capacitors. The three-stage LNA exhibits a 3.4-dB noise figure and a 19.5-dB gain over 11.7-12.2 GHz. The negative-feedback-type three-stage IFA shows a 3.9-dB noise figure and a 23-dB gain over 0.5-1.5 GHz. The DRO gives 10.mW output power at 10.67 GHz, with a frequency stability of 1.5 MHz over a temperature range from -40-80°C. A direct broadcast satellite (DBS) receiver incorporating these MMIC's exhibits an overafl noise figure of /spl les/ 4.0 dB for frequencies from 11.7-12.2 GHz.     

单片低噪声HBT VCO

报道一组单片HBTVCO电路的设计、制作及其测试结果。电路采用HBT作为有源器件，PN结二极管作为变容管。S波段单片VCO的输出功率为0dBm，调谐范围100MHz，在载波频率2．84GHz处，相位噪声为－80dBc／Hz＠100kHz。以C波段单片HBTVCO的输出功率为－10dBm。这些结果表示HBT在微波与毫米波振荡器运用中具有较好的低相位噪声特性。     

一种用于5G通信的高稳定双模功率放大器

采用国产40 nm CMOS工艺,设计了一种用于5G通信的28 GHz双模功率放大器。功率级采用大尺寸晶体管,获得了高饱和输出功率。采用无中心抽头变压器,消除了大尺寸晶体管带来的共模振荡问题。在共源共栅结构的共栅管栅端加入大电阻,提高了共源共栅结构的高频稳定性。采用共栅短接技术,解决了大电阻引起的差模增益恶化问题。在级间匹配网络中采用变容管调节,实现了双模式工作,分别获得了高功率增益和高带宽。电路后仿真结果表明,在高增益模式下,该双模功率放大器获得了20.8 dBm的饱和输出功率、24.5%的功率附加效率和28.1 dB的功率增益。在高带宽模式下,获得了20.6 dBm的饱和输出功率、22.6%的功率附加效率和12.2 GHz的3 dB带宽。     

Millileter-Wave Power-Combining Amplifier Using A Broadband Waveguide Combiner

A Millimeter-wave power-combining amplifier based on the multi-way rectangular-waveguide power-dividing/combining circuit has been presented and investigated. The equivalent-circuit approach has been used to analyze the passive power-dividing/combining circuits. An eight-device amplifier is designed and measured to validate the power-dividing/combining mechanism using this technique. Both the measured 10-dB return loss bandwidth and the 2-dB insertion loss bandwidth of the passive system are more than 10?GHz. The measured maximum small-signal gain of the millimeter-wave eight-device power amplifier is 22.5?dB at 26.8?GHz with a 3-dB bandwidth of more than 6?GHz, while the input and output return loss of the proposed eight-device power amplifier is around ?10?dB from 26?GHz to 36?GHz. The measured maximum output power at 1-dB compression from the power amplifier is 28 dBm at 29.5?GHz.     

X波段变容管调谐GaAs FET集成VCO的设计

本文介绍了一种宽带FET VCO的S参数设计理论和方法.根据这一理论和方法,用我所的低噪声小功率FET和电调变容管,研制成了X波段变容营调谐的GaAs FBT混合集成VCO.在8GHz频段内,获得500MHz的电调范围,在整个电调范围内,输出功率大于10mW,功率起伏小于0.5dB,直流转换效率大于10%,噪声性能与普通速调管相当,而且体积小,重量轻,成本低.     

A low-power 2/5.8-GHz dual-wide-band CMOS LC-VCO with switched-inductor technique

A fully integrated dual-band LC voltage control oscillator, designed in a 0.18-µm CMOS technology for 5.8-GHz/2.0-GHz wireless communication applications, is described. The frequency band switching is accomplished with switched-inductor technique. The dual-band oscillator can be operated in 5.38–6.23?GHz and 1.78–2.07?GHz with 15% frequency tuning range. Two different inductors are used for the frequency band switching. Frequency tuning is implemented by varying the capacitance of a MOS varactor. The measured phase noise is ?109?dBc/Hz @ 1?MHz and ?112?dBc/Hz @ 1?MHz for frequency at 5.8?GHz and 2?GHz, respectively. This oscillator is fabricated in UMC's 0.18-µm one-poly-six-metal 1.8?V process. The power dissipation of this dual-band VCO is 11.7 and 9.3?mW for oscillation frequency of 2?GHz and 5.8?GHz, respectively.