Formation of α-Si3N4 Solid Solutions in the System Si3N4-A1N-Y2O3

The subsolidus phase diagram of the quasiternary system Si₃N₄-AlN-Y₂O₃ was established. In this system α-Si₃N₄ forms a solid solution with 0.1Y₂O₃: 0.9 AIN. The solubility limits are represented by Y_0.33Si_10.5Al_1.5O_0.5N_15.5 and Y_0.67Si₉A1₃ON₁₅. At 1700°C an equilibrium exists between β-Si₃N₄ and this solid solution.     

Densification of Si3N4 with LiYO2 Additive

This paper deals with the densification and phase transformation during pressureless sintering of Si₃N₄ with LiYO₂ as the sintering additive. The dilatometric shrinkage data show that the first Li₂O- rich liquid forms as low as 1250°C, resulting in a significant reduction of sintering temperature. On sintering at 1500°C the bulk density increases to more than 90% of the theoretical density with only minor phase transformation from α-Si₃N₄ to β-Si₃N₄ taking place. At 1600°C the secondary phase has been completely converted into a glassy phase and total conversion of α-Si₃N₄ to β-Si₃N₄ takes place. The grain growth is anisotropic, leading to a microstructure which has potential for enhanced fracture toughness. Li₂O evaporates during sintering. Thus, the liquid phase is transient and the final material might have promising mechanical properties as well as promising high-temperature properties despite the low sintering temperature. The results show that the Li₂O−Y₂O₃ system can provide very effective low-temperature sintering additives for silicon nitride.     

Thermal Conductivity of β-Si3N4: II, Effect of Lattice Oxygen

Dense β-Si₃N₄ with various Y₂O₃/SiO₂ additive ratios were fabricated by hot pressing and subsequent annealing. The thermal conductivity of the sintered bodies increased as the Y₂O₃/SiO₂ ratio increased. The oxygen contents in the β-Si₃N₄ crystal lattice of these samples were determined using hot-gas extraction and electron spin resonance techniques. A good correlation between the lattice oxygen content and the thermal resistivity was observed. The relationship between the microstructure, grain-boundary phase, lattice oxygen content, and thermal conductivity of β-Si₃N₄ that was sintered at various Y₂O₃/SiO₂ additive ratios has been clarified.     

Near-Net Shape β-Si4Al2O2N6 Parts by Hydrolysis Induced Aqueous Gelcasting Process

In this paper, a new net-shaping process, an hydrolysis-induced aqueous gelcasting (GC) (GCHAS) has been reported for consolidation of β-Si₄Al₂O₂N₆ ceramics from aqueous slurries containing 48–50 vol%α-Si₃N₄, α-Al₂O₃, AlN, and Y₂O₃ powders mixture. Dense ceramics of same composition were also consolidated by aqueous GC and hydrolysis assisted solidification routes. Among three techniques used, the GCHAS process was found to be superior for fabricating defect-free thin wall β-Si₄Al₂O₂N₆ crucibles and tubes. Before use, the as purchased AlN powder was passivated against hydrolysis. The sintered β-Si₄Al₂O₂N₆ ceramics exhibited comparable properties with those reported for similar materials in the literature.     

Sintering of Si3N4-Y2O3-Al2O3

Sintering kinetics of the system Si₃N4-Y2O₃-Al₂O3 were determined from measurements of the linear shrinkage of pressed disks sintered isothermally at 1500° to 1700°C. Amorphous and crystalline Si₃N₄ were studied with additions of 4 to 17 wt% Y₂O₃ and 4 wt% A1₂O₃. Sintering occurs by a liquid-phase mechanism in which the kinetics exhibit the three stages predicted by Kingery's model. However, the rates during the second stage of the process are higher for all compositions than predicted by the model. X-ray data show the presence of several transient phases which, with sufficient heating, disappear leaving mixtures of β ' -Si₃N₄ and glass or β '-Si₃N₄, α '-Si₃N₄, and glass. The compositions and amounts of the residual glassy phases are estimated.     

Nucleation and Growth of α'-SiAlON on α-Si3N4

Morphology, composition, and growth defects of α'-SiAION have been studied in a fine-grained material with an overall composition Y_0.33Si₁₀Al₂O₁N₁₅ prepared from α-Si₃N₄, AlN, Al₂O₃, and Y₂O₃ powders. TEM analysis has shown that fully grown α'-SiAloN grains always contain an α-Si₃N₄ core, implicating heterogeneous nucleation operating in the present system. The growth mode is epitaxial, despite the composition and lattice parameter difference between α-Si₃N₄ and α'-SiAlON. The inversion boundary that separates two domains in the seed crystal is seen to continue in the grown α'-SiAION. Lacking a special growth habit, the growth typically proceeds from more than one site on the seed crystal, and the different growth fronts impinge on each other to give an equiaxed appearance of α'-SiAlON. Misfit dislocations on the α/α'interface are identified as [0001] type ( b = 5.62 Å) and 1/3 [1 2 10] type ( b = 7.75 Å). These nucleation and growth characteristics dictate that microstructural control of α'-SiAlON must rest on the size distribution of the starting α-Si₃N₄ powder.     

Microstructure and Mechanical Properties of the in situβ-Si3N4/α'-SiAlON Composite

The in situ β-Si₃N₄/α'-SiAlON composite was studied along the Si₃N₄–Y₂O₃: 9 AlN composition line. This two phase composite was fully densified at 1780°C by hot pressing Densification curves and phase developments of the β-Si₃N₄/α'-SiAlON composite were found to vary with composition. Because of the cooperative formation of α'-Si AlON and β-Si₃N₄ during its phase development, this composite had equiaxed α'-SiAlON (∼0.2 μm) and elongated β-Si₃N₄ fine grains. The optimum mechanical properties of this two-phase composite were in the sample with 30–40%α', which had a flexural strength of 1100 MPa at 25°C 800 MPa at 1400°C in air, and a fracture toughness 6 Mpa·m^1/2. α'-SiAlON grains were equiaxed under a sintering condition at 1780°C or lower temperatures. Morphologies of the α°-SiAlON grains were affected by the sintering conditions.     

The System Si3N4-SiO2-Y2O3

Subsolidus phase relations were established in the system Si₃N₄-SiO₂-Y₂O₃. Four ternary compounds were confirmed, with compositions of Y₄Si₂O₇N₂, Y₂Si₃O₃N₄, YSiO₂N, and Y₁₀(SiO₄)₆N₂. The eutectic in the triangle Si₃N₄-Y₂Si₂O₇-Y₁₀(SiO₄)₆N₂ melts at 1500°C and that in the triangle Si₂N₂O-SiO₂-Y₂Si₂O₇ at 1550°C. The eutectic temperature of the Si₃N₄-Y₂Si₂O₇ join was ∼ 1520°C.     

Microstructure and Short-Term Oxidation of Hot-Pressed Si3N4/ZrO2(+Y2O3) Ceramics

Composite ceramic materials based on Si₃N₄ and ZrO₂ stabilized by 3 mol% Y₂O₃ have been formed using aluminum isopropoxide as a precursor for the Al₂O₃ sintering aid. Densification was carred out by hot-pressing at temperatures in the range 1650° to 1800°C, and the resulting micro-structures were related to mechanical properties as well as to oxidation behavior at 1200°C. Densification at the higher temperatures resulted in a fibrous morphology of the Si₃N₄ matrix with consequent high room-temperature toughness and strength. Decomposition of the ZrO₂ grains below the oxidized surface during oxidation introduced radial stresses in the subscalar region, and from the oxidation experiments it is suggested that the ZrO₂ incorporated some N during densification.     

Phase Equilibria in the System Si3N4-SiO2-BeO-Be3N2

The 1780°C isothermal section of the reciprocal quasiternary system Si₃N₄-SiO₂-BeO-Be₃N₂ was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be₆Si³N₈, Be₁₁Si₅N₁₄, Be₅Si²N₆, Be₉Si₃N₁₀, Be₈SiO₄N₄, Be₆O₃N₂, Be₈O₅N₂, and Be₉O₆N₂. Large solid solubility occurs in β-Si₃N₄, BeSiN₂, Be₉Si₃N₁₀, Be₄SiN₄, and β-Be₃N₂. Solid solubility in β-Si₃N₄ extends toward Be₂SiO₄ and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be₂SiO₄ at 1880°C. A 4-phase isotherm, liquid +β-Si₃N₄ ( ss )Si₂ON₂+ BeO, exists at 1770°C.     

Microstructural Observations on Hot-Pressed Si3N4

The development of microstructure in hot-pressed Si_aN₄ was studiehd for a typical Si₃N₄ powder with and without BeSiN₂ as a densification aid. The effect of hot-pressing temperature on density, α- to β-Si₃N₄ conversion and specific surface area showed that BeSiN₂ appears to increase the mobility of the system by enhancing densification, α- to β-Si₃N₄ transformation, and grain growth at temperatures between 1450° and 1800°. These processes appear to occur in the presence of a liquid phase.     

Microstructure of Y2O3 Fluxed Hot-Pressed Silicon Nitride

Detailed microstructural analysis of a 10 mol% Y₂O₃ fluxed hot-pressed silicon nitride reveals that, in addition to the yttrium-silicon oxynitride phase located at the multiple Si₃N₄ grain junctions, there is a thin boundary phase 10 to 80 Å wide separating the silicon nitride and the oxynitride grains. Also, X-ray microanalysis from regions as small as 200 Å across demonstrates that the yttrium-silicon oxynitride, Y₂Si(Si₂O₃N₄), phase can accommodate appreciable quantities of Ti, W, Fe, Ni, Co, Ca, Mg, Al, and Zn in solid solution. This finding, together with observations of highly prismatic Si₃N₄ grains enveloped by Y₂Si(Si₂O₃N₄), suggests that densification occurred by a liquid-phase "solution-reprecipitation" process.     

Subsolidus Phase Relationships in Part of the System Si,Al,Y/N,O: The System Si3N4─AIN─YN─Al2O3─Y2O3

The subsolidus phase relationships in the system Si,Al,Y/N,O were determined. Thirty-nine compatibility tetrahedra were established in the region Si₃N₄─AIN─Al₂O₃─Y₂O₃. The subsolidus phase relationships in the region Si₃N₄─AIN─YN─Y₂O₃ have also been studied. Only one compound, 2YN:Si₃N₄, was confirmed in the binary system Si₃N₄─YN. The solubility limits of the α'─SiAION on the Si₃N₄─YN:3AIN join were determined to range from m = 1.3 to m = 2.4 in the formula Y _{m /3}Si_{12- m} Al _m N₁₆. No quinary compound was found. Seven compatibility tetrahedra were established in the region Si₃N₄─AIN─YN─Y₂O₃.     

Hot-Pressing Behavior of Si3N4

The densification behavior of Si₃N₄ containing MgO was studied in detail. It was concluded that MgO forms a liquid phase (most likely a magnesium silicate). This liquid wets and allows atomic transfer of Si₃N₄. Evidence of a second-phase material between the Si₃N₄ grains was obtained through etching studies. Transformation of α- to β-Si₃N₄ during hot-pressing is not necessary for densification.     

Phase Relations in the Si3N4-Rich Portion of the Si3N4–AlN–Al2O3–Y2O3

The phase relations in the Si₃N₄-rich portion of the Si₃N₄–AlN–Y₂O₃ rystem were investigated using hot-pressed bodies. The one-phase fields of β3 and α, the twophase fields of β+α, β+M (M=melilite), and α+M, and the three-phase fields of β+α+M were observed in the Si₃N₄-rich portion. The α- and β-sialons are not two different compounds but an allotropic transformation phase of the Si–Al–O–N system, and an α solid solution expands and stabilizes with increasing Y₂O₃ content. Therefore, the formulas of the two sialons should be the same.     

Influence of Phase Formation on Dielectric Properties of Si3N4 Ceramics

The influence of phase formation on the dielectric properties of silicon nitride (Si₃N₄) ceramics, which were produced by pressureless sintering with additives in MgO–Al₂O₃–SiO₂ system, was investigated. It seems that the difference in the dielectric properties of Si₃N₄ ceramics sintered at different temperatures was mainly due to the difference of the relative content of α-Si₃N₄, β-Si₃N₄, and the intermediate product (Si₂N₂O) in the samples. Compared with α-Si₃N₄ and Si₂N₂O, β-Si₃N₄ is believed to be a major factor influencing the dielectric constant. The high-dielectric constant of β-Si₃N₄ could be attributed to the ionic relaxation polarization.     

Phase Relationships in the Si3N4–SiO2–Lu2O3 System

Phase relationships in the Si₃N₄–SiO₂–Lu₂O₃ system were investigated at 1850°C in 1 MPa N₂. Only J-phase, Lu₄Si₂O₇N₂ (monoclinic, space group P 2₁/ c , a = 0.74235(8) nm, b = 1.02649(10) nm, c = 1.06595(12) nm, and β= 109.793(6)°) exists as a lutetium silicon oxynitride phase in the Si₃N₄–SiO₂–Lu₂O₃ system. The Si₃N₄/Lu₂O₃ ratio is 1, corresponding to the M-phase composition, resulted in a mixture of Lu–J-phase, β-Si₃N₄, and a new phase of Lu₃Si₅ON₉, having orthorhombic symmetry, space group Pbcm (No. 57), with a = 0.49361(5) nm, b = 1.60622(16) nm, and c = 1.05143(11) nm. The new phase is best represented in the new Si₃N₄–LuN–Lu₂O₃ system. The phase diagram suggests that Lu₄Si₂O₇N₂ is an excellent grain-boundary phase of silicon nitride ceramics for high-temperature applications.     

Effect of Crystallizing the Grain-Boundary Glass Phase on the High-Temperature Strength of Hot-Pressed Si3N4 Containing Y2O3

The effects of fabrication variables on the high-temperature strength of hot-pressed Si₃N₄ containing 5 wt% Y₂O₃ were studied. Materials containing a crystalline grain-boundary phase, formed as a consequence of a high-temperature presintering heat treatment and identified as Si₃N₄·Y₂O₃, had high-temperature strengths significantly superior to those observed for materials containing a glass phase.     

Phase Relations and Stability Studies in the Si3N4-SiO2-Y2O3 Pseudoternary System

Composite powders were hot-pressed to determine the phase relations in the Si₃N₄-SiO₂-Y₂O₃ pseudoternary system. Four quaternary compounds, Si₃Y₂O₃N₄, YSiO₂N, Y₁₀Si₇O₂₃N₄, and Y₄Si₂O₇N₂, were identified. Studies of polyphase and single-phase materials in this system showed that these 4 compounds are unstable under oxidizing conditions. Materials within the Si₃N₄-Si₂N₂O-Y₂Si₂O₇ compatibility triangle precluded the unstable compounds, and are extremely resistant to oxidation.     

Solid-Liquid Reaction in the Si3N4-AlN-Y2O3 System under 1 MPa of Nitrogen

The melting behaviors of selected compositions in the Si₃N₄-AlN-Y₂O₃ system were determined under 1 MPa of nitrogen. The phase diagrams of the ternary and their binary systems are presented. The lowest melting composition of the ternary system contains 15 mol % Si₃N₄, 25 mol % AIN, and 60 mol % Y₂O₃ and has a melting temperature of 1650°C. The binary eutectic compositions and temperatures are 15 mol % Si₃N₄ and 85 mol % Y₂O₃ at 1720°C, and 20 mol % AIN and 80 mol% Y₂O₃ at 1730°C.