The effect of electric field strength on the induction charge of freely levitating particles

Many industrial processes such as electrostatic separation, fluidization, and coating rely upon induction charging of fine particles. This paper considers the effects of electric field strength on the magnitude of the induction charge on freely levitating particles. The charging time and charge on a freely levitating particle depend on a number of properties, mainly the electric field strength, particle size, density, and resistivity. A charging model showing the dependence upon the electric field strength is presented and analyzed, along with a model of the levitation process. A high-speed digital imaging system was used to measure individual particle motion during levitation. Using these data along with the developed models, it was possible to determine the charge on the particle. Semiconductive particles with a mass mean diameter (MMD) of 156 /spl mu/m were used in these experiments and tested at electric fields of 6.8, 8.5, 15, and 21 kV/cm, respectively. In addition, some experiments using particles 97-/spl mu/m and 412-/spl mu/m MMD at an electric field of 15 kV/cm were carried out to confirm the results obtained for the 156-/spl mu/m particles. It was found that the particle charge was dependent upon both the charging time and electric field strength. In particular, for high electric fields the particle did not achieve its saturation charge before liftoff occurred. This shows that higher electric field strength is not necessarily the optimum condition for levitation of semiconductive particles.     

离子风对静电除尘器中颗粒物脱除的影响机制研究

静电除尘器中电晕放电产生的离子风是影响颗粒迁移和沉积的重要因素,通过建立多过程耦合的静电除尘器数值模型,研究了不同极配型式静电除尘器的电场分布特性及离子风对空间流场和颗粒物脱除的影响规律。结果表明,针刺电极电场强度和离子电荷密度的最高值均略高于芒刺电极,但是芒刺电极的静电场分布更加均匀。在外加电压为60k V时,针刺电极和芒刺电极的离子风最高流速分别可达7.91m/s和4.62m/s,离子风会促进荷电颗粒向收尘极板运动,同时也会形成近壁高速区造成堆积颗粒的不均匀分布并导致二次扬尘。由此,针对不同形式静电除尘器提出了合理调整放电电极结构方法,进行离子风调控以强化颗粒物脱除。     

Numerical Simulation of the 2-D Gas Flow Modified by the Action of Charged Fine Particles in a Single-Wire ESP

A numerical model for simulating precipitation of submicrometer particles in a singlewire electrostatic precipitator is discussed in this paper. It includes all important phenomena affecting the process: electric field, space charge density, gas flow, including the secondary electrohydrodynamic flow caused by the corona discharge and charged particles, and particle transport. A simplified corona model assumes just one ionic species and neglects the ionization zone. The fully coupled model for the secondary EHD flow, considering the ion convection, has been implemented. The dust particles are charged by ionic bombardment and diffusion. The gas flow pattern is significantly modified by the secondary EHD flow, which depends on the particle concentration. As for fine particles the drift velocity is small and particles practically follow the gas streamlines, the particle concentration has a very strong effect on the precipitation efficiency.     

Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD

1.3- and 1.55-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs) on InP have been realized. High-reflectivity AlGaInAs-InP lattice matched distributed Bragg reflectors (DBRs) were grown on InP substrates. 1.7 (for 1.3 /spl mu/m) and 2.0 (for 1.55 /spl mu/m) mW single mode power at 25/spl deg/C, 0.6 mW single mode power at 85/spl deg/C and lasing operation at >100/spl deg/C have been achieved. 10 Gbit/s error free transmissions through 10 km standard single mode fiber for 1.3-/spl mu/m VCSELs, and through 15 km nonzero dispersion shift fiber for 1.55-/spl mu/m VCSELs, have been demonstrated. With the addition of an SOA, 100 km error free transmission at 10 Gbit/s also has been demonstrated through a negative dispersion fiber. No degradation has been observed after over 2500-h aging test.     

High-power/high-brightness diode-pumped 1.9-/spl mu/m thulium and resonantly pumped 2.1-/spl mu/m holmium lasers

We report high power (>36 W) with beam propagation factor M/sup 2//spl sim/2 in a diode end-pumped Tm:LiYF/sub 4/ (Tm:YLF) laser generating output near the 1.91-/spl mu/m region. Using the 1.91-/spl mu/m emission and high brightness achieved with the Tm:YLF laser we resonantly end-pump the Holmium /sup 5/I/sub 7/ manifold in Ho:YAG and demonstrate /spl sim/19 W of continuous-wave (CW) output. The diode-to-Holmium optical to-optical conversion efficiency achieved is /spl sim/18%. Using a CW pumped and repetitively Q-switched configuration, the Tm:YLF pumped Ho:YAG laser achieves >16 W of output power with an M/sup 2//spl sim/1.48 at 15 kHz. A Q-switched frequency range of 9 to >50 kHz is also achieved.     

Single-mode distributed feedback and microlasers based on quantum-dot gain material

Quantum-dot gain material fabricated by self-organized epitaxial growth on GaAs substrates is used for the realization of 980-nm and 1.3-/spl mu/m single-mode distributed feedback (DFB) lasers and edge-emitting microlasers. Quantum-dot specific properties such as low-threshold current, broad gain spectrum, and low-temperature sensitivity could be demonstrated on ridge waveguide and DFB lasers in comparison to quantum-well-based devices. 980-nm DFB lasers exhibit stable single-mode behavior from 20/spl deg/C up to 214/spl deg/C with threshold currents < 15 mA (1-mm cavity length). Utilizing the low-bandgap absorption of quantum-dot material miniaturized monolithically integrable edge-emitting lasers could be realized by deeply etched Bragg mirrors with cavity lengths down to 12 /spl mu/m. A minimum threshold current of 1.2 mA and a continuous-wave (CW) output power of >1 mW was obtained for 30-/spl mu/m cavity length. Low-threshold currents of 4.4 mA could be obtained for 1.3-/spl mu/m emitting 400-/spl mu/m-long high-reflection coated ridge waveguide lasers. DFB lasers made from this material by laterally complex coupled feedback gratings show stable CW single-mode emission up to 80/spl deg/C with sidemode suppression ratios exceeding 40 dB.     

ESD failure mechanisms of analog I/O cells in 0.18-/spl mu/m CMOS technology

Different electrostatic discharge (ESD) protection schemes have been investigated to find the optimal ESD protection design for an analog input/output (I/O) buffer in 0.18-/spl mu/m 1.8- and 3.3-V CMOS technology. Three power-rail ESD clamp devices were used in power-rail ESD clamp circuits to compare the protection efficiency in analog I/O applications, namely: 1) gate-driven NMOS; 2) substrate-triggered field-oxide device, and 3) substrate-triggered NMOS with dummy gate. From the experimental results, the pure-diode ESD protection devices and the power-rail ESD clamp circuit with gate-driven NMOS are the suitable designs for the analog I/O buffer in the 0.18-/spl mu/m CMOS process. Each ESD failure mechanism was inspected by scanning electron microscopy photograph in all the analog I/O pins. An unexpected failure mechanism was found in the analog I/O pins with pure-diode ESD protection design under ND-mode ESD stress. The parasitic n-p-n bipolar transistor between the ESD clamp device and the guard ring structure was triggered to discharge the ESD current and cause damage under ND-mode ESD stress.     

Numerical Modeling of Conductive Particle Trajectories in Roll-Type Corona-Electrostatic Separators

Several attempts have already been made to simulate particle trajectories in roll-type electrostatic separators. However, the predictive value of the results is limited by an excessive number of simplifying assumptions regarding the electric field distribution, as well as particle charging and discharging mechanisms. The present work is aimed at improving the existing models by taking into account: (1) the non-uniformity of the electric field in the active zone of the separator and (2) the effect of spark discharges occurring between the electrodes. Based on previous observations, the conductive particles were assumed to lift-off when no longer exposed to corona discharge. The numerical simulations were performed for particles of various sizes. The electric field was computed in each point of the trajectory using a finite element program. It was found that: (1) some of the smaller particles impact the static electrode and are deviated to the middling compartment of the collector and (2) field annealing which accompanies spark discharges significantly affects the trajectories of conductive particles. The results of this study could guide the design of new electrostatic separation applications.     

1.3-/spl mu/m-range GaInNAsSb-GaAs VCSELs

1.3-/spl mu/m-range GaInNAsSb vertical-cavity surface-emitting lasers (VCSELs) with the doped mirror were investigated. GaInNASb active layers that include a small amount of Sb can be easily grown in a two-dimensional manner as compared with GaInNAs due to the suppression of the formation of three-dimensional growth in MBE growth. The authors obtained the lowest J/sub th/ per well (150 A/cm/sup 2//well) for the edge-emission type lasers due to the high quality of GaInNAsSb quantum wells. Using this material for the active media, the authors accomplished the first continuous wave operation of 1.3-/spl mu/m-range GaInNAsSb VCSELs. For the reduction of the threshold voltage and the differential resistance, they used the doped mirror grown by metal-organic chemical vapor deposition (MOCVD). By three-step growth, they obtained 1.3-/spl mu/m GaInNAs-based VCSELs with the low threshold current density (3.6 kA/cm/sup 2/), the low threshold voltage (1.2 V), and the low differential resistance (60 /spl Omega/) simultaneously for the first time. The back-to-back transmission was carried out up to 5 Gb/s. Further, the uniform operation of 10-ch VCSEL array was demonstrated. The maximum output power of 1 mW was obtained at 20/spl deg/C by changing the reflectivity of the front distributed Bragg reflector mirror. GaInNAsSb VCSELs were demonstrated to be very promising material for realizing the 1.3-/spl mu/m signal light sources, and the usage of the doped mirror grown by MOCVD is the best way for 1.3-/spl mu/m VCSELs.     

Adhesion of charged powders to a metal surface in the powdercoating process

Substrate-particle adhesion of electrostatically charged, nonconducting particles deposited on electrically grounded substrates is discussed. Glass microspheres of diameters ranging from 25.5-74.1 μm, charged by corona and tribe-charging, were deposited in a monolayer on conducting stannic-oxide coated surfaces of glass plates (NESA). The total force of adhesion due to electrostatic, van der Waals, and gravitational forces was measured by observing the removal of particles by applying a known electric field between the particle coated surface and a clean surface of a second NESA glass, placed parallel to it at a distance of 0.013 m. The adhesive force was measured as a function of particle size and charge. The net average charge on the particles was measured using a Faraday cup. The experimental values agree well with the calculated force of adhesion for a single layer deposition. The charge decay of the particles was studied using a noncontact electrostatic voltmeter. The charge relaxation time of the deposited powder was found to increase with time. A physical model of the adhesion of charged powder paints deposited on a grounded metal substrate is presented. The role of the forces acting on a spherical polymer particle deposited on the surface of a uniform coating of powder paint is investigated as a function of particle diameter and charge. The particles are assumed to be unipolarly charged and deposited uniformly on the substrate. The relative magnitudes of the electrostatic attractive and repulsive forces are analyzed as functions of powder film thickness and particle size     

High-saturation current wide-bandwidth photodetectors

This paper describes the design and performance of two wide-bandwidth photodiode structures. The partially depleted absorber photodiode utilizes an absorbing layer consisting of both depleted and undepleted In/sub 0.53/Ga/sub 0.47/As layers. These photodiodes have achieved saturation currents (bandwidths) of >430 mA (300 MHz) and 199 mA (1 GHz) for 100-/spl mu/m-diameter devices and 24 mA (48 GHz) for 100-/spl mu/m/sup 2/ area devices. Charge compensation has also been utilized in a similar, but modified In/sub 0.53/Ga/sub 0.47/As-InP unitraveling-carrier photodiode design to predistort the electric field in the depletion region in order to mitigate space charge effects. For 20-/spl mu/m-diameter photodiodes the large-signal 1-dB compression current and bandwidth were /spl sim/90 mA and 25 GHz, respectively.     

Particle Charging in Combined Corona-Electrostatic Fields

The association of several ionizing and nonionizing electrodes generates combined corona-electrostatic fields, characterized by space charge zones of well-defined extensions. In a previous paper, the authors presented an effective numerical method for the computation of such fields. The aim of this present work is to show how these results can be employed for estimating the charge acquired by insulating and conducting particles when passing through the space charge zones generated by various corona-electrostatic electrode geometries. The study is done under several assumptions that authorize the use of Pauthenier's formula. Diffusion charging can be neglected, the applied electric field is quasi-uniform in the vicinity of particles, and particle speed is low compared with that of air ions. The charging model takes into account the computed spatial distribution of the electric field and charge density. The computations were performed for various values of the geometrical parameters of the electrode system and of the particle transit time through the corona discharge zone. The results can be used for the design of the electrode system of any electrostatic process employing corona discharge fields.      

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (/spl lambda/=0.98 /spl mu/m)

We conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 /spl mu/m. The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-/spl mu/m-wide stripe lasers having a cavity length of 800 /spl mu/m, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34/spl deg/, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW//spl mu/m) demonstrates reliable performance. For 4-/spl mu/m-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW//spl mu/m are obtained.     

Evaluation of spherical particle sizes with an asymmetric illumination microscope

A polarized microscope system is used to perform goniometric measurements of light scattered by small particles. The light incident angle on a sample of monodispersed latex microspheres is increased sequentially and a microscope objective lens collects scattered light from the samples. Light is only collected at angles greater than the objective lens numerical aperture (NA) so that only light scattered by the spheres is collected. The experimental results were modeled with a Mie theory-based algorithm. Experiments conducted with microspheres of diameter 1.03, 2.03, and 6.4 /spl mu/m show that, by decreasing the objective lens NA from NA=0.55 to NA=0.0548, a more distinguishable scattering pattern is detectable. From these highly shaped curves, we found that the size of a sphere of nominal diameter 2.03 /spl mu/m was 2.11 /spl plusmn/0.06 /spl mu/m and a 6.4 /spl mu/m sphere was 6.34 /spl plusmn/0.07 /spl mu/m.     

A method for detecting the transition from corona from water droplets to dry-band arcing on silicone rubber insulators

The paper presents an investigation on the use of partial discharge (PD) as a means to study the development of leakage current (LC) on silicone rubber insulators in a salt-fog chamber. Simultaneous measurements of LC and PD on dead-end type silicone rubber insulators exposed to different combinations of electrical stress and salt-fog salinity are performed. The results show that for an electrical stress of 33 V/mm applied to the insulator, the average LC experiences gradual changes and reaches a critical level (around 1 mA) where dry-band arcing is observed after 20 minutes at 2300 /spl mu/S/cm, and after 25 minutes at 1800 /spl mu/S/cm. The corresponding PD levels reach hundreds of pC after 15 minutes at 2300 /spl mu/S/cm, and after 20 minutes at 1800 /spl mu/S/cm. For a salinity corresponding to 1800 /spl mu/S/cm and stress of 26 V/mm, the LC changes much more gradually and reaches the critical level only after approximately 60 minutes. The corresponding PD reaches hundreds of pC after 30 minutes and more than 1500 pC after 60 minutes. Pattern recognition techniques have been applied to investigate the transition from corona to dry-band arcing. The features extracted from the maximum and mean apparent charge trends are found to be useful to cluster and classify the two phenomena. Simultaneous visual observations of the discharges on the insulator surface support the results. The investigation, therefore, shows that PD is a sensitive method for detecting the transition from corona from water droplets to dry-band arcing and an alternative method for studying the early aging stage of silicone rubber insulators.     

Angular domain imaging of objects within highly scattering media using silicon micromachined collimating arrays

Optical imaging of objects within highly scattering media, such as tissue, requires the detection of ballistic/quasi-ballistic photons through these media. Recent works have used phase/coherence domain or time domain tomography (femtosecond laser pulses) to detect the shortest path photons through scattering media. This work explores an alternative, angular domain imaging, which uses collimation detection capabilities of small acceptance angle devices to extract photons emitted aligned closely to a laser source. It employs a high aspect ratio, micromachined collimating detector array fabricated by high-resolution silicon surface micromachining. Consider a linear collimating array of very high aspect ratio (200: 1) containing 51/spl times/1000 /spl mu/m etched channels with 102-/spl mu/m spacing over a 10-mm silicon width. With precise array alignment to a laser source, unscattered light passes directly through the channels to the charge coupled device detector and the channel walls absorb the scattered light at angles >0.29/spl deg/. Objects within a scattering medium were scanned quickly with a computer-controlled Z axis table. High-resolution images of 100-/spl mu/m-wide lines and spaces were detected at scattered-to-ballistic ratios of 5/spl times/10/sup 5/: 1, with objects located near the middle of the sample seen at even higher levels. At >5/spl times/10/sup 6/: 1 ratios, a uniform background of scattered illumination degrades the image contrast unless recovered by background subtraction. Monte Carlo simulation programs designed to test the angular domain imaging concept showed that the collimator detects the shortest path length photons, as in other optical tomography methods. Furthermore, the collimator acts as an optical filter to remove scattered light while preserving the image resolution. Simulations suggest smaller channels and longer arrays could enhance detection by >100.     

Particle-triggered pre-breakdown phenomena in atmospheric air gap under AC voltage

Corona discharge mechanism and breakdown voltage characteristics of air gaps in the presence of metallic particles were investigated including the relationship between the corona discharge mechanism and the phase resolved partial discharge patterns. These results are of interest for detection of foreign particles in gas insulated systems (GIS). The results with different shaped particles show that the corona mechanism depends on the particle shape and applied voltage. Moreover the corona discharges on both sides of the particle interfere with each other by inflow of charge carriers into the particle. The breakdown voltage is a minimum when the particle is in the vicinity of the electrode due to active interference of coronas. The phase-charge characteristics as the phase resolved partial discharge patterns vary with the particle shape. This suggests that the corona discharge mechanisms for all types of particles should be considered in the particle-detection method for GIS based on the phase resolved partial discharge patterns.     

Electrical characterization of benzocyclobutene polymers for electric micromachines

An approach using interdigitated capacitors for electrical characterization of CYCLOTENE, a spin-on low-k benzocyclobutene (BCB)-based polymer is introduced and the effect of moisture uptake is investigated. The dielectric constant of CYCLOTENE is extracted from capacitance measurements with a systematic error less than 0.1%, giving an average value of 2.49 with a standard deviation of 1.5%. The dielectric constant increases by 1.2% after a humidity stress of 85% RH at 85/spl deg/C. The I-V characteristics of CYCLOTENE show a dependency of breakdown strength and leakage current on the geometrical dimensions of the device under test. A breakdown strength of 225V//spl mu/m and 320 V//spl mu/m for 2-/spl mu/m and 3-/spl mu/m finger spacing, respectively, and a leakage current of a few to tens of pA are measured. The I-V characteristics degrade drastically after the humidity stress, showing a breakdown strength of 100 V//spl mu/m and 180 V//spl mu/m for 2-/spl mu/m and 3-/spl mu/m finger spacing, respectively, and a maximum increase in the leakage current as large as one order of magnitude. The maximum performance and long-term reliability of an electric micromachine are adversely affected by the degradation of the breakdown voltage and the leakage current after moisture absorption. It is expected, however, that the electrical efficiency is improved using BCB-based polymers with negligible dependency on moisture absorption.     

Agglomeration of particles by ac corona discharge

Improving the collection efficiency for particles smaller than 1 μm on every precipitator is important. We sought to improve the collection of these particles on an ESP due to particle agglomeration. Particles are charged by ac corona discharge in a precharger and agglomerated by a dc electric field in an agglomerator downstream of the precharger. Diesel exhaust particles were used as particulate matter for the experiments. The distribution of particle size was measured using a particle counter and a scanning electron microscope. By these methods, particles as small as 0.01 μm could be counted. Results showed the agglomeration between particles at ac corona discharge operating mode. The concentration of particles smaller than approximately 0.35 μm decreases, and that of particles larger than approximately 0.35 μm increases in the agglomerator. The agglomeration rate increases with increasing applied voltage, then saturates. These results may be due to the size distribution and to decrease of concentration by agglomeration. © 1999 Scripta Technica, Electr Eng Jpn, 130(1): 30–37, 2000     

Effect of ambient relative humidity and surface modification on the charge decay properties of polymer powders in powder coating

Back corona on a powder layer deposited via the electrostatic powder-coating process using corona guns has a strong influence on the corrosion resistance and appearance of cured powder films. The presence of the back corona is often evidenced by orange peel, micro-dents, and pinholes on the film surface. The surface resistivity of the sprayed powder governs the charge decay process and, hence, the onset of back corona. The polymer powders used in powder coating are highly resistive, with surface resistivity often greater than 10/sup 15/ /spl Omega///spl square/. Surface resistivity can be altered by the adsorption of moisture on the surfaces of the powder particles. The objectives of this research were: (1) investigate the effect of decreasing surface resistivity on the appearance of the powder-coated film and (2) enhance hydrophilic properties of polymer powder by plasma treatment. By changing the relative humidity (RH) of powder during the spraying process, it was observed that the surface resistivity could be lowered by orders of magnitude. For example, the surface resistivity for an acrylic powder decreased from 2.96/spl times/10/sup 13/ /spl Omega///spl square/ at 25% RH to 9.6/spl times/10/sup 11/ /spl Omega///spl square/ at 70% RH. The plasma treatment of this powder further improved its charge decay properties. The effects of variation of RH on the appearance of powder-coated panels surface layer are presented for an acrylic polymer powder. The film texture has been characterized by microstructural surface analysis using an optical scanning instrument. Methods of plasma and corona treatments of the powder for increasing moisture adsorption on the surface and decreasing surface resistivity are discussed along with analysis of surface morphology using the atomic force microscope.