Electronic defects in LaAlO3

We present calculations of the energy levels of the oxygen vacancy, the Al_La antisite and the oxygen interstitial defects in LaAlO₃ using density functional methods that do not need an empirical bandgap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level near the LaAlO₃ conduction band and above the Si gap. It is identified as the main electron trap and a cause of instability. There is only one vacancy level in the gap, because the higher second level lies within the La conduction band. The Al_La antisite gives a state near midgap, neutral when empty, which would be an important trap, with no counterpart in HfO₂.     

Templates for LaAlO3 epitaxy on silicon

As direct epitaxy of crystalline LaAlO₃ on silicon has not been realized yet, we investigated the use of a template between the high-κ and the substrate. We performed calculations in the Density Functional Theory framework for two possible templates: a Sr_0.5O monolayer and a 0.5 nm thick γ-Al₂O₃(0 0 1) layer. We firstly found that in the Sr_0.5O monolayer case, care must be taken for the LaAlO₃ starting sequence in order to expect good band offsets with silicon. In the γ-Al₂O₃ case, a more complex engineering of the interface is needed. Nonetheless, we found stable interfaces and a surface reconstruction in agreement with experimental observations. Moreover, these interfaces exhibit insulating properties and insight calculations for a Si–γ-Al₂O₃–LaAlO₃ superstructure lead us to a 1.9 eV conduction band offset.     

Dielectric properties of single crystals of Al2O3, LaAlO3, NdGaO3, SrTiO3, and MgOat cryogenic temperatures

A dielectric resonator technique has been used for measurements of the permittivity and dielectric loss tangent of single-crystal dielectric substrates in the temperature range 20-300 K at microwave frequencies. Application of superconducting films made it possible to determine dielectric loss tangents of about 5×10^-7 at 20 K. Two permittivity tensor components for uniaxially anisotropic samples were measured. Generally, single-crystal samples made of the same material by different manufacturers or by different processes save significantly different losses, although they have essentially the same permittivities. The permittivity of one crystalline ferroelectric substrate, SrTiO₃, strongly depends on temperature. This temperature dependence can affect the performance of ferroelectric thin-film microwave devices, such as electronically tunable phase shifters, mixers, delay lines and filters     

High-speed shielded velocity-matched Ti:LiNbO3 opticalmodulator

A shielded velocity-matched Ti:LiNbO₃ optical modulator is investigated, focusing on the characteristics of the traveling-wave (TW) electrode and the optical waveguide. The optical waveguide is analyzed and its parameters are determined using the newly developed modified-step-segment method (MSSM). The TW electrode is analyzed using the second-order triangular element quasi-TEM finite element method (FEM). By taking the thickness of the coplanar waveguide (CPW) traveling-wave (TW) electrode into consideration, it is confirmed that there is an optimum overlaid layer thickness for a given electrode thickness. It is also shown that very wide modulation bandwidth can be attained by using the optimum CPW TW electrode thickness and overlaid layer thickness     

High-Q frequency-temperature compensated sapphire/rutile resonator

Experimental results for the novel design of a composite sapphire-rutile frequency-temperature compensated resonator are presented. The frequency-temperature dependence was annulled when a specific balance of electric energy in the rutile and sapphire was reached at 56 K in a WGE_9,0,0 mode at 13.1 GHz with a Q-factor of 30 million     

Microstructure and dielectric response of SrTiO3/NdGaO3 interdigitated capacitors

Epitaxial strontium titanate (SrTiO₃ or STO) thin films were prepared by an off-axis pulsed laser deposition technique on neodymium gallate (NdGaO₃ or NGO) substrates held at temperature of 820 °C. This technique allows different film growth rates in a deposition. Coplanar capacitors were fabricated and dielectric responses were measured at 1 MHz and at 2 GHz, and from 300 K to 4 K. The electric field tunability of the dielectric constant and loss tangent were taken with a range of electric field. The structure and morphology of the films were analyzed using high-resolution X-ray diffractometry and atomic force microscopy, respectively. The results showed that the films are crystalline with (1 0 0) orientation and the grains are columnar. Increased in-plane grain size and reduced surface to volume ratio were found to play a major role in improved performance of the film coplanar capacitors. The film with the growth rate of approximate 40 Å/min showed the highest change in the dielectric constant with an electric field of 4 V/μm. The film also showed the largest in-plane grain size of about 3000 Å.     

Field patterns of TM0 modes in a shielded dielectric resonator

The resonant modes in a cylindrical dielectric resonator located within a cylindrical shielding cavity are studied by means of the finite integral technique. The field patterns of five lowest transverse-magnetic modes are presented, and the controversies of the mode designations are discussed.     

Two port analysis of dielectric resonator antennas excited in TE01 mode

Results of a numerical and experimental study of the transmission and input reflection coefficients of a two element array of half-split cylindrical dielectric resonator (CDR) antennas are presented. The antenna elements are situated on a ground plane and fed by a coaxial probe. A procedure based on the method of moments (MoM) for the coupling of a body of revolution (BOR) to a non-BOR geometry together with classical microwave network theory is implemented. Some of the numerical results are verified experimentally     

Precision measurement of coupling between microstrip and TE01 mode dielectric resonator

The coupling between a microstrip transmission line and a dielectric resonator with a relative dielectric constant of 80 has been measured as a function of the distance between the resonator and the microstrip. Precision measurement involves the TRL de-embedding procedure, and data fitting to a fractional linear transformation on a complex plane. A comparison is made of covered and uncovered resonators, demonstrating the influence of radiation     

High-temperature superconducting delay lines and filters onsapphire and thinned LaAlO3 substrates

The very low microwave surface resistance of high-temperature-superconductor (HTS) thin films allows the realization of microwave devices with performance superior to those made by conventional technology. Superconducting delay lines, for example, have very low propagation loss and dispersion. Long, low-loss, superconducting delay lines on both thinned LaAlO₃ and sapphire substrates are presented. Delay lines with 27- and 44-ns delay have been made, for the first time, on 5-cm-diameter 254- and 127-μm-thick LaAlO₃ substrates, respectively. The insertion losses at 77 K and 6 GHz are 6 and 16 dB, respectively. Delay lines with 9-ns delay have, for the first time, been produced on M-plane sapphire substrates and demonstrate, at 77 K, an insertion loss of 1.0 dB at 6 GHz. A 2.5%-bandwidth 10 GHz four pole edge-coupled bandpass filter on M-plane sapphire substrates is also reported. The filter has minimum insertion loss of less than 0.5 dB at 9.75 GHz and 71 K     

An HTS narrow bandwidth coplanar shunt inductively coupledmicrowave bandpass filter on LaAlO3

Coplanar waveguide bandpass filters with shunt inductively coupled resonators using high-temperature superconductors (HTS's) on LaAlO₃ substrates were developed for high packing density, narrow bandwidth, and low power applications. The computer-aided design and measurements on resonators to test weak end-coupling are described in this paper. A coplanar three-pole Chebychev bandpass filter with 1.8% 3-dB bandwidth at 10 GHz and 1.3-dB insertion loss at 77 K was fabricated and measured. The maximum superconducting current density of the filter is evaluated     

Ba(Zn_(1/3)Nb_(2/3))O_3微波介质陶瓷的研究进展

3G移动通信事业的迅速发展对应用于基站的微波介质谐振器陶瓷材料的Q值提出了更高的要求。Ba(Zn1/3Nb2/3)O3微波介质陶瓷材料因为具有很高的Q值、接近于零的τf和适宜的εr而备受关注。介绍了Ba(Zn1/3Nb2/3)O3系列微波介质陶瓷的结构和性能、改性研究、纳米化制备工艺及Ba(Zn1/3Nb2/3)O3-Ba(Co1/3Nb2/3)O3复合技术,以期对该领域其他研究者有所帮助。     

Tuning the color purity of LaAlO3:Eu3+ red phosphor by the cross relaxation

Precisely adjusting the color purity of LaAlO3:Eu3+ red phosphor with 593 and 618 nm emissions is achieved in a strategy of suppressing transitions of high energy levels of Eu3+ ions through varying the doping concentration.As the doping concentration increases,the transitions from high levels 5D3,2,1 will be weakened,while those from 5D0 are enhanced up to a critical value with the aid of the cross relaxation.As a result,an increase of the color purity from 95.2% to 97.4% is obtained.It indicates that the ...     

溶液燃烧法制备纳米LaAlO3:Dy3+及发光性能研究

通过溶液燃烧法以La(NO3)3·6H2O,Dy(NO3)3·9H2O和Al(NO3)3·9H2O及C2H5NO2为原材料制备纳米粉体Lal-xDyxA1O3(x=0,0.01,0.02,0.03,0.04,0.05).采用X射线衍射、扫描电子显微镜、紫外-可见漫反射光谱和荧光光谱研究晶体结构、形貌、发光强度等内容,结果表明,通过溶液燃烧法在800℃下煅烧4h,Dy3+离子进入到LaAlO3晶格中,荧光光谱分析结果表明Lal-xDyxAlO3粉体在370 nm的激发波长下,发光主峰位于423 nm处,在掺杂比例为0.03时发光强度最高,其禁带宽度5.54 eV与理论值5.6 eV相近.     

Dielectric tunable properties of (Ba1−xSrx)TiO3 thin films on LaAlO3 substrate

(Ba_1−xSr_x)TiO₃ (1−x=0.8, 0.7, 0.6 and 0.5) thin films were prepared on (0 0 1) LaAlO₃ substrates by sol–gel method. The films were found to be crystallized in preferential (0 0 1) orientation after post-deposition annealing at 750°C for 1.5 h and 1100°C for 2 h in air, respectively. We investigated the dependence of tunability and dissipation factor on annealing temperature and different Ba/Sr ratios. It was found that the tunability increased dramatically and dissipation factor decreased obviously with increasing annealing temperature, and Ba_0.6Sr_0.4TiO₃ thin films annealed at 1100°C for 2 h have a tunability of 46.9% at 80 kV/cm bias filed and a dissipation factor of 0.008 at 1 MHz.     

可调谐氮化硅波导微环谐振腔滤波器研究

设计并制备了一种基于热光效应的集成可调谐氮化 硅(Si₃N₄)波导微环谐振腔滤波器,通过采用马赫-曾德干涉仪(MZI)构成的可调谐 耦合器控制耦合区耦合比,以实现滤波器消光比的调谐。设计并优化了微环谐振 腔的波导截面尺寸、弯曲半径和耦合区波导间隔等参数,并通过光刻、反应离子刻蚀(RIE )等工艺制备 了两种不同弯曲半径的Si₃N₄波导微环谐振腔。实验结果表明,本文器件在波长1550nm附近处的自由光谱 范围(FSR)为68pm,3dB带宽约为16pm,品质因子Q达到了9.68×10 4,消光比可调范围约为17dB。     

Co_2O_3掺杂对0.965MgTiO_3-0.035SrTiO_3微波介质陶瓷性能的影响

采用传统电子陶瓷制备方法研究了Co2O3(1.5%～5.0%,质量分数)掺杂的0.965MgTiO3-0.035SrTiO3(MST0.035)微波介质陶瓷,分析了Co2O3含量对MST0.035陶瓷的烧结性能、晶相结构、显微形貌以及微波介电性能的影响。结果表明:Co2O3的掺杂促进了MST0.035陶瓷的烧结。随着Co2O3掺杂量的增加,陶瓷介电常数略有下降,谐振频率温度系数以及品质因数增加,同时中间相MgTi2O5逐渐减少直至完全消失。当Co2O3掺杂量为质量分数3.0%时,MST0.035陶瓷的烧结温度由1 380℃降低到1 290℃,其烧结所得的样品具有优良的微波介电性能:谐振频率温度系数τf=–2.53×10–6/℃,高的品质因数Q·f=19 006 GHz和介电常数εr=20.5。     

低温烧结CaO-B_2O_3-SiO_2玻璃陶瓷及其性能研究

低温烧结制备了添加晶核剂S(CaCO3,H3BO3,SiO2为原料)的CaO-B2O3-SiO2(CBS)玻璃陶瓷。研究了晶核剂S对所制CBS的主晶相及其性能的影响。结果表明:在CBS玻璃陶瓷中,包含β-CaSiO3、α-SiO2和CaB2O4三种晶相,晶核剂S能促进主晶相的形成,提高析晶度。S的添加量为质量分数8%时,所得到CBS性能最好:εr=6.11,tanδ=0.0009,弯曲强度σf≥220 Mpa。     

Photoemission (XPS and XPD) study of epitaxial LaAlO3 film grown on SrTiO3(0 0 1)

This study investigates the tensile-strained growth of LaAlO₃ on SrTiO₃(0 0 1) substrate by molecular beam epitaxy (MBE). Growth was controlled in situ by reflection high energy electron diffraction (RHEED). The characterization was carried out ex situ by photoemission and atomic force microscopy (AFM). Photoelectron spectroscopy (XPS) reveals the development of a TiO_x-rich interface. Photoelectron diffraction (XPD) confirms that a 1.2-nm-thick pseudomorphic LaAlO₃ film has been grown on SrTiO₃(0 0 1) substrate with a perpendicular lattice parameter of 0.372±0.02 nm.     

High-performance enhancement-mode GaN-based p-FETs fabricated with O3-Al2O3/HfO2-stacked gate dielectric

In this letter, an enhancement-mode(E-mode) GaN p-channel field-effect transistor(p-FET) with a high current density of-4.9 mA/mm based on a O₃-Al₂O₃/HfO₂(5/15 nm) stacked gate dielectric was demonstrated on a p⁺⁺-GaN/pGaN/AlN/AlGaN/AlN/GaN/Si heterostructure. Attributed to the p⁺⁺-GaN capping layer, a good linear ohmic I-V characteristic featuring a low-contact resistivity(ρc) of 1.34 × 10^-4 Ω·cm² was obtain...