镀钽TiNi形状记忆合金表面的XPS分析

采用多弧离子镀的方法在Ti 50.6%(原子分数)Ni形状记忆合金表面沉积了钽镀层。通过X射线光电子能谱(XPS)剖面分析发现TiNi合金表面钽镀层厚度均匀,并且在镀层与基体之间形成一薄层过渡层。将镀钽TiNi合金曝露于空气中后,通过XPS的全谱和高分辨谱图对其表面的成分和价态分析发现,镀钽层表面由于钽在空气中自然氧化形成了一层很薄的钽的氧化膜,最表面为高价钽的氧化物(Ta2O5),次表面为低价钽氧化物的混合物TaO2、TaO和TaOx(x<1)。     

溅射钽靶材用高纯钽粉工艺研究

分析了高纯钽粉生产的技术特点,介绍了一种改进的钽靶材用高纯钽粉的生产方法。采用高温脱氢(900~950℃)和低温脱氧(700~800℃)分步进行的工艺,有利于钽粉氧、氢、镁含量及粒度的控制,所得样品兼具低氧和小粒度的特点。采用真空热处理(700~800℃)工艺可以有效除去脱氧后残余的金属镁、酸洗带入的H、F等杂质,确保颗粒不长大,同时使杂质含量得到了很好的控制。     

钽及其合金

综述了难熔金属钽及其合金的性能，加工工艺和应用。     

钽铝合金薄膜工艺的正交试验

钽铝合金薄膜由于具有优良的热稳定性而适合制作薄膜功率型电阻网络。薄膜制备工艺条件对薄膜的电性能有很大的影响。该论文介绍了一种正交试验方法以获取最佳工艺条件。根据正交试验的算法，用ＦＯＲＴＲＡＮ语言编写了优化程序，在微机上进行了数据处理。用所选取的最佳工艺条件制出了性能优良的钽铝薄膜中功率衰减器，从而证实了正交试验法是行之有效的。     

还原氧化钽制备钽粉工艺研究进展

评述了几种由氧化钽还原制取钽粉的新工艺。并阐述了不同方法的工艺原理、特点和产品特性。钠还原法反应时间短,还原温度范围广,能过得到高纯度高比表面的钽粉。FFC法具有工艺简单,污染小,成本低的特点,可以用来制备电容器级粉末。SOM法电解速度快,具有很好的发展前景。采用镁蒸汽还原能够得到性能好的钽粉,但是还原时间长,还原装置复杂。     

基于高比容钽粉的聚合物片式电容器制备工艺研究

针对比容为50000～70000μF.V/g的较高比容钽粉,研究了导电聚合物聚3,4-乙烯基二氧噻吩(PE-DOT)作为阴极材料的有机片式固体钽电解电容器的制备工艺,通过调整阳极体制备及阴极被覆工艺等参数实现了PEDOT在高比容钽块表面的有效被覆,获得了各项性能参数良好的聚合物片式钽电解电容器。重点研究了压制密度、形成电流密度等参数及分段被膜工艺对聚合物片式固体钽电容器容量引出、等效串联电阻、漏电流等性能的影响,并讨论了相应的电容器工作机理。     

等离子喷涂参数对钽涂层组织及性能的影响

采用等离子喷涂法制备了钽金属涂层，用电子显微镜分析了不同工艺条件下钽涂层的化学成分、表面形貌，测试了涂层与基材的结合强度。结果表明，采用优化的等离子喷涂工艺参数，可以制取组织致密、厚度均匀的钽涂层；钽粉的颗粒尺寸对材料的熔化状态影响较大；在试验的喷距范围内，喷距对粉末的熔化状态和涂层结合强度均无明显影响。     

用网状阴极法在碳钢表面沉积氮化钽薄膜

介绍了一种新型的在钢铁基体上制备氮化钽薄膜的方法－－网状阴极法。其设备简单、价格低廉。试验中发现，在各个参数配比合适的条件下，可制备出结构为fcc(面心立方）和hex（密排六方）的氮化钽薄膜。薄膜较致密且均匀，与其体的结合好。同时分析了在最佳工艺参数条件下合成氮化钽膜的成分、组织、表面、断口形貌和结合力等。该方法为氮化钽薄膜作为结构材料使用提供了一种新的途径。     

基于原子层沉积技术制备氧化钽薄膜及其特性研究

本工作以单晶硅为衬底,乙醇钽和水分别为钽源和氧源,研究原子层沉积技术制备氧化钽薄膜的工艺,考察了乙醇钽温度、衬底温度、脉冲时间等工艺条件对氧化钽薄膜的生长速率、粗糙度和表面形貌等特性的影响.通过椭偏仪、原子力显微镜、扫描电子显微镜以及高分辨X射线光电子能谱测试分析表明,制备获得的氧化钽薄膜表面光滑,粗糙度小于1 nm,薄膜生长速率受工艺参数的影响较大,其中在乙醇钽源瓶温度170℃、脉冲时间0.1 s以及衬底温度200℃时,氧化钽的生长速率为0.253?/cycle.本工作基于原子层沉积高性能氧化钽薄膜的工艺研究,将对氧化钽薄膜在介质材料、存储介质以及光学涂层等领域的应用奠定基础.     

莱奥本矿业大学教授P.帕森评述钽及其合金的加工和应用

提纯和后续加工各种钽萃取方法提供了纯度为99.5～99.8%的钽粉,表1列举了用不同方法还原的钽原料化学成分。杂质的存在使得钽不能直接投入使用,因为与杂质的沸点相比,钽的熔点是非常高的。可以通过真空或者惰气内加热来提纯芝,并且必须在还原过程中精     

钽粉制备工艺研究进展

介绍了制备金属钽粉的传统工艺氟钽酸钾钠热还原工艺及其发展状况,评述了几种制备金属钽粉的最新工艺,包括均相还原法、电子间接还原法、氧化钽加氯化钙钠还原法及FFC法,阐明了新方法的原理及特点,并提出了钽粉生产今后的发展方向.     

世界钽粉生产工艺的发展

论述了国内外电容器级高压钽粉、中压钽粉、高比容钽粉的生产工艺发展过程。在钽粉生产工艺发展过程中,各种先进的装备被应用,各钽粉生产厂家围绕着钽粉比容的提高,杂质含量的降低,物理性能的优化等综合性能的改善,不断开发出新工艺、新技术,使钽粉适应并推动着钽电容器的发展。     

Tantalum coating of mild steel by chemical vapour deposition

An experimental method has been developed for coating long mild steel tubes with tantalum as a protection against acid corrosion. The tantalum is deposited onto the inner surface of the tubes by the hydrogen reduction of tantalum pentachloride at atmospheric pressure. Smooth “orange peel” pore-free coatings can be produced, giving reliable protection.     

电容器级钽粉关键技术与开发研究

引述了Ta电容器与Al电容器、多层陶瓷电容器相比突出的性能与应用特征，分析了Ta电容器片式化、小型化促进电容器级Ta粉高比容化发展的新趋势，叙述了航空、航天和军工领域对高压电容器高可靠性能的需求，以及对中高压Ta粉向更高电压、更低SER方向发展的引领，回顾了电容器用高比容Ta粉、中高压Ta粉发展应用进程，介绍了经典氟钽酸钾（K2TaF7）金属Na还原法、电子束熔炼法、球磨片式化法生产的高比容Ta粉、高压Ta粉、中压（片状）Ta粉的性能、产品品级及关键技术，分析了30～80kμFV／gTa粉耐压性能影响因素，介绍了Ta粉高比容化、高压化新技术、装置、产品形貌、性能及优缺点，在此基础上提出了电容器级Ta粉高比容化、高压化创新进步的思路。     

Biofunctionalization strategies on tantalum-based materials for osseointegrative applications

The use of tantalum as biomaterial for orthopedic applications is gaining considerable attention in the clinical practice because it presents an excellent chemical stability, body fluid resistance, biocompatibility, and it is more osteoconductive than titanium or cobalt-chromium alloys. Nonetheless, metallic biomaterials are commonly bioinert and may not provide fast and long-lasting interactions with surrounding tissues. The use of short cell adhesive peptides derived from the extracellular matrix has shown to improve cell adhesion and accelerate the implant’s biointegration in vivo. However, this strategy has been rarely applied to tantalum materials. In this work, we have studied two immobilization strategies (physical adsorption and covalent binding via silanization) to functionalize tantalum surfaces with a cell adhesive RGD peptide. Surfaces were used untreated or activated with either HNO₃ or UV/ozone treatments. The process of biofunctionalization was characterized by means of physicochemical and biological methods. Physisorption of the RGD peptide on control and HNO₃-treated tantalum surfaces significantly enhanced the attachment and spreading of osteoblast-like cells; however, no effect on cell adhesion was observed in ozone-treated samples. This effect was attributed to the inefficient binding of the peptide on these highly hydrophilic surfaces, as evidenced by contact angle measurements and X-ray photoelectron spectroscopy. In contrast, activation of tantalum with UV/ozone proved to be the most efficient method to support silanization and subsequent peptide attachment, displaying the highest values of cell adhesion. This study demonstrates that both physical adsorption and silanization are feasible methods to immobilize peptides onto tantalum-based materials, providing them with superior bioactivity.     

Use of anodic tantalum pentoxide for high-density capacitor fabrication

In this work we report on very thin (10 to 100 nm) tantalum oxide fabricated by anodic oxidation of tantalum nitride and tantalum silicide to be used as the dielectric of high density MIM and MIS capacitors. These films exhibit greatly improved leakage currents, breakdown voltage and very low defect density, thus allowing the fabrication of large area capacitors. Several counter and bottom electrodes have been used and compared. The effects of the different processing conditions (top-electrode metals, annealing conditions, bottom electrode stoichiometry) on the capacitor performances are extensively discussed throughout this work. The nitrogen content of tantalum nitride films seems to have an important influence on the insulator quality. Leakage currents in the insulator have been carefully studied in order to determine the nature and physical origin of the dominant conduction mechanisms in the insulator. The electrical behaviour of the resulting high-density MIM capacitors has been extensively characterized. Finally, we describe a new method to fabricate MIS diodes with anodic tantalum oxide as insulator.