γ ? α2 Phase transformation in fractured high temperature stress rupture Ti-48Al-2Nb(at.%)

The ₂ phase transformation in fractured high temperature stress rupture Ti-48Al-2Nb(at.%) alloy has been studied by analytical electron microscopy. ₂ and phases were found at grain boundaries. ₂ layers that suspended in layers and interfacial ledge higher than 2d ₍₁₁₁₎ at /₂ interfaces were observed in the lamellar grains. These facts indicated that ₂ phase transformation and dynamic recrystallization have occurred during high temperature stress rupture deformation. It can be concluded that deformation induced ₂ phase transformation and dynamic recrystallization resulted in the presence of particles at grain boundaries. A structural and compositional transition area between deformation-induced ₂(or ) and its adjacently original (or ₂) phases was found by HREM and EDS and is suggested as a way to transform between and ₂ phase during high temperature stress rupture deformation. The transition area was formed by slide of partial dislocations on close-packed planes and diffusion of atoms.     

Internal friction and coefficient of linear expansion of zirconium and cobalt in the phase transition region

Results are presented from measurement of the internal friction and coefficient of linear expansion of zirconium and cobalt near the points of firstorder phase transformation. This is the hcp bcc transition beginning at 1135°K for zirconium and the hep fcc transition beginning at 706°K for cobalt.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 50, No. 4, pp. 625–629, April, 1986.     

Charge State of Indium and Point Defects in Indium-Doped Lead Telluride Crystals

Experimental data on the lattice parameter, thermoelectric power, and microhardness of PbTeIn crystals and the conversion fromp- to n-type with increasing indium content can be interpreted under the assumption that the indium in PbTeIn has variable valence: 2In²⁺ In⁺ + In³⁺. A crystal-quasi-chemical model is proposed for defect formation in PbTeIn: the incorporation of In⁺ into octahedral interstices and In³⁺ into tetrahedral interstices of the close packing of Te atoms, accompanied by In₂Te₃ precipitation.     

A method of joint determination of the effective coefficients of horizontal mixing of large particles and of external heat exchange in an organized fluidized bed

A method is proposed for the joint determination of the coefficients of horizontal particle diffusion and external heat exchange in a stagnant fluidized bed.Notation c_f, c_s, c_n specific heat capacities of gas, particles, and nozzle material, respectively, at constant pressure - D effective coefficient of particle diffusion horizontally (coefficient of horizontal thermal diffusivity of the bed) - d equivalent particle diameter - d_t tube diameter - H₀, H heights of bed at gas filtration velocities u₀ and u, respectively - H_a height of active section - l width of bed - L tube length - l _o width of heating chamber - N number of partition intervals - p=H/H₀ expansion of bed - s_n surface area of nozzle per unit volume of bed - S_h, S_v horizontal and vertical spacings between tubes - t_c, t₀, t_s, t_n, t_w initial temperature of heating chamber, entrance temperature of gas, particle temperature, nozzle temperature, and temperature of apparatus walls, respectively - u₀, u velocity of start of fluidization and gas filtration velocity - y horizontal coordinate - ^*, coefficient of external heat exchange between bed and walls of apparatus and nozzle - ₁, ₁, ₂, ... coefficients in (4) - thickness of tube wall - _b bubble concentration in bed - ₀ porosity of emulsion phase of bed - _n porosity of nozzle - =(t_s – t₀)/(t_c – t₀) dimensionless relative temperature of particles - _n coefficient of thermal conductivity of nozzle material - f, _s, _n densities of gas, particles, and nozzle material, respectively - _be=_s(1 – ₀) (1 – _b) average density of bed - time - _max time of onset of temperature maximum at a selected point of the bed - R =l _o/l Fourier number - Pe = ₁ l ²/D Péclet number - Bi = /_n Biot number Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 41, No. 3, pp. 457–464, September, 1981.     

Dielectric properties of chemically vapour-deposited Si3N4

The dielectric properties of chemically vapour-deposited (CVD) amorphous and crystalline Si₃N₄ were measured in the temperature range from room temperature to 800° C. The a.c. conductivity ( _a.c.) of the amorphous CVD-Si₃N₄ was found to be less than that of the crystalline CVD-Si₃N₄ below 500° C, but became greater than that of the crystalline CVD-Si₃N₄ over 500° C due to the contribution of d.c. conductivity ( _d.c.). The measured loss factor () and dielectric constant () of the amorphous CVD-Si₃N₄ are smaller than those of the crystalline CVD-Si₃N₄ in all of the temperature and frequency ranges examined. The relationships of ^n-1, (- ) ^n-1 and/(- ) = cot (n/2) (were observed for the amorphous and crystalline specimens, where is angular frequency andn is a constant. The values ofn of amorphous and crystalline CVD-Si₃N₄ were 0.8 to 0.9 and 0.6 to 0.8, respectively. These results may indicate that the a.c. conduction observed for both of the above specimens is caused by hopping carriers. The values of loss tangent (tan) increased with increasing temperature. The relationship of log (tan) T was observed. The value of tan for the amorphous CVD-Si₃N₄ was smaller than that of the crystalline CVD-Si₃N₄.     

Errors in measuring the reflection coefficient of ground

Conclusions The ground reflection factor can be determined in the range of 25–400 Mc from relative measurements of field strength in a vertical plane.In order to raise the accuracy of measurements it is necessary that the load impedance of the receiving dipole should be considerably larger than its input impedance and that its height should vary in the range of 0.5h₂2 (for h₁5=const).     

The effective surface energy of brittle materials

The effective surface energy of four brittle materials, alumina, poly(methylmethacrylate), glass, and graphite, is calculated from load/deflection curves of notched bars deformed in three-point bending. Two of the methods, which are commonly used in fracture mechanics studies,viz the modified Griffith treatment and the compliance analysis method, are concerned with the effective surface energy at the initiation of fracture, _I . The third method, the work of fracture test, is concerned with the mean effective surface energy over the whole fracture process, _F . The two estimates of _I give consistent values, and there is no systematic variation of _I with notch depth. Values of _F decrease with increasing notch depth as the fracture process becomes more controlled. For alumina _{I F} . For PMMA and glass _I > _F because of a multiplicity of crack sources during fracture initiation. For graphite _I < _F because of subsidiary cracking as fracture proceeds.     

The effect of quenching on the martensitic transformation in ß1 phase of Au-Cd alloys

The effect of quenching on the martensitic transformation mechanism in ₁ Au-Cd alloys has been investigated by measurements of the electrical resistivity and X-ray diffraction. In the case of the Au-47.5 at%Cd alloy, the ₂-martensite is the characteristic product under quenching conditions, but it always exists with the equilibrium ₂-martensite phase. Consequently, the _{1 2} and ₂transformations occur simultaneously during the heating and cooling cycles. The corresponding resistivity behaviour is very complicated and extremely sensitive to thermal treatments such as quenching temperature and thermal cycling. On the other hand, in the case of the Au-49.0 at%Cd alloy, only the _{1 2} transformation occurs even when quenched, and the transformation is unaffected structurally by quenching. A distinct resistivity anomaly, which is considered to be due to the disappearance of quenched-in vacancies, is observed in quenched alloys. Some important characteristics of this anomaly are determined. In particular, the quenching effect disappears when the specimen is heated above the temperature at which the resisitivity anomaly begins. This result suggests that the quenched-in vacancies play an essential role in the martensitic transformation process under quenching conditions.     

A dilatometric method to measure the thermal diffusivity of nonmetallic liquids

A new method to measure the thermal diffusivity of liquids is presented. It requires determination of the time dependence of the thermal expansion of the liquid when it is subjected to a heat source at the top of the cell containing the liquid. The high accuracy of the method (about 3%) is due to an essential reduction of convective currents and also to the absence of temperature detectors, which generally introduce unwanted perturbations on the thermal Field.Nomenclature Thermal conductivity - c Specific heat - Density - c = specific heat x density - h Newton coefficient - Thermal diffusivity - T, 0 Temperature - tV Electric signal - Calibration coefficient - _exp, _th Volume change of the liquid     

The fracture energy of carbon-fibre reinforced glass

The fracture energy of carbon-fibre reinforced glass has been measured by the work of fracture technique, using specimens of varied geometry, Meaningful material properties were obtained only when crack propagation was controlled throughout failure. The work of fracture ( _F) depended on strain-rate and fibre volume fraction, and was typically 3 kJm^–2 for a 40 vol % specimen. Variations of work of fracture due to strain-rates have been related to the microstructure of the fracture surfaces and estimates have been obtained of the fibre-matrix interfacial shear stress during pull-out. Approximate estimates have been made of the fracture initiation energy ( _I) by fracture mechanics analyses, _I was less than _F and no strain-rate sensitivity was detected. An attempt has been made to explain _I in terms of the initial rate of release of strain energy during fibre fracture.     

The L12 ↔ DO19 transformation in the intermetallic compound Fe3Ge

From a crystallographic point of view, the transition from the L12 to DO19 phase is an ordered version of the widely investigated fcc to hcp transformation. In the present study, the transformation kinetics of the forward and backward reactions of the L12 DO19transitions in Fe3Ge have been studied and it is shown that a large hysteresis exists between the forward and backward reactions. The detailed microstructural changes that accompany the L12 DO19 transition have been characterized and these explain the observed transformation hysteresis.     

Microstructure and mechanical properties of rapidly quenched L20 and L20+L12 alloys in Ni-Al-Fe and Ni-Al-Co systems

Ductile L2₀-type wires and+L1₂-type duplex wires with high strengths and large elongation in the Ni-Al-Fe and Ni-Al-Co ternary systems have been manufactured directly from the liquid state by an in-rotating-water spinning method. The wire diameter was in the range 80 to 180m and the average grain size was 2 to 4m for the wires and 0.2 to 1.0m for the+ wires. _y, _f and _p of the wires were found to be about 360 to 760 MPa, 560 to 960 MPa, and 0.2 to 5.5%, respectively, for the Ni-Al-Fe system, those of the+ wires were about 395 to 660 MPa, 670 to 1285 MPa, and 3.5 to 17%, respectively, for the Ni-Al-Fe system, and about 260 to 365 MPa, 600 to 870 MPa, and 4.0 to 7.0%, respectively, for the Ni-Al-Co system. Cold-drawing caused a significant increase in _y and _f and the values attained were about 1850 and 2500 MPa, respectively, for Ni-20Al-30Fe and Ni-25Al-30Co wires drawn to about 90% reduction in area. The high strengths, large elongation and good cold-workability of the melt-quenched and+ compound wires have been inferred to be due to the structural change into a low-degree ordered state containing a high density of phase boundaries, suppression of grain-boundary segregation and refinement of grain size.     

On intrinsic and extrinsic effects in the surface impedance of cuprate superconductors

Surface impedance measurements in the normal and superconducting state are an excellent method to study conduction electron dynamics and extended defects. Electron dynamics show up most clearly in the relaxation range, i.e., for distances traveled in one rf periods= _F/ ( _F Fermi velocity) being smaller or of the order of the penetration depth and mean free pathl. For materials with _F10⁷ cm/sec the relaxation range is easily accessible forf0.1 THz. Then, in the normal state, relaxation defines the surface impedance with an intrinsic penetration depth _I approaching the London penetration depth _L andR _{I 0 L}/ 2 as surface resistance, allowing measurement of _L and relaxation time(T, ). In the superconducting state the photon interaction scales with _L/ _L=1/( _F dimension of Cooper pairs forl) and causes at low frequencies an absorption rate growing with, which is decreasing with _F/l. The rate increase proportional to turns to a decrease above 0.1 THz, which is accompanied by a decrease ofA with frequency which is stronger for large and small _F/l. These characteristic dependences allow measurement of material parameters, anisotropy, and dynamics of electrons, especially the relaxation rate. But presently, the rf surface impedanceZ is still shrinking with material improvements, which shows, clearly, that theZ=Z _I+Z _res is still dominated by extrinsic properties summarized inZ _res. We present evidence thatZ _res is due to the large leakage currentj _bl and the smallj _cJ of weak links where the latter destroys the intrinsic shielding from a _I-thin seam _J deep into the bulk. This causes rf residual lossesR _res( ₀)² _J ³ _bl/2.R _res stays finite atT-0 due to _bl(T0) _bl(j _bl) being amplified by ( _J/ _I)³>10³ as a weighting factor. The appropriate measure of weak links are the grain-boundary resistanceR _bn((0)) enhancing _JR _bn andR _resR _bn ² . Thus,Z _res is minimal for minimal extrapolated resistivity(T0).To identify the weak links as a new entity, the H-field dependence is most helpful, because at very low fieldsH _c 1J1/ _J Josephson fluxons penetrate into the weak links. These Josephson fluxons show negligible flux flow or flux creep, and enhanceZ _res by _J(H, T) . The measuredj _cJ(H, T) andj _bl values explainZ _res quantitatively as well as in temperature (a+T ⁿ ) (n1,T<T _c /2) and in field (b+H ⁿ ) (n1,H>H _c1J) dependence. The strength of the field dependencedZ _res/dHZ _res(H _c1J )/H _c2J(T) is not only a measure ofZ _res andH _c2J(T) but is crucial for nonlinear effects and (fluxon) noise also, which limit the performance of rf devices.     

Interface characterization of a β-SiC whisker-Al composite

The nature of the interface, the orientation relationship of -SiC whisker (-SiC_w)-Al combination, and the misfit dislocation structures at the -SiC_w-Al interfaces in a -SiC_w-Al composite have been observed by a high-resolution transmission electron microscopy (HRTEM). It was shown that quite a good bonding between the whisker and the aluminium was achieved due largely to the lattice match between SiC and aluminium at the interfaces. The orientation relationship between the whisker and the aluminium was {002}_SiC{111}_Al; 110_SiC110_Al. The interface was clean, faceted and semicoherent. The misfit dislocation cores were located in the whisker side away from the -SiC_w-Al interfaces.     

Thermal Conductivity of the Four-Leg Spin-Ladder System La2Cu2O5 Single Crystal

We have investigated the magnetic susceptibility, , and the thermal conductivity, , in magnetic fields for the four-leg spin-ladder system La₂Cu₂O₅ single crystal. The in a magnetic field parallel to the ladder exhibits a kink at 130 K in correspondence to the magnetic ordering. The along the ladder exhibits a peak at 25 K and a shoulder at 14 K, which are probably related to the thermal conductivity due to magnons, _magnon, and that due to phonons, _phonon, respectively. The perpendicular to the ladder, on the other hand, exhibits only one broad peak related to _phonon. The observed large anisotropy of has been explained based upon the anisotropy of _magnon.     

Anisotropic grain growth of R-α-sialon (R = Nd and Er)

Two R--sialon (R_0.6Si_9.3Al_2.7O_0.9N_15.1, R=Nd and Er) compositions were first fired at 1750°C/25 min and 1650°C/2 h respectively for completion of the phase transformation. Elongated -sialon grain morphology was developed in both samples after being re-fired at 1800°C for different periods of time. The growth in width of R--sialon grains is controlled by diffusion in the liquid, while the length growth tends to be interfacial reaction controlled. The anisotropic growth of R--sialon is attributed to the large difference in the growth rate constant between the length and the width directions of the grain.     

Response of a spinning liquid column to pitch excitation

Summary The response of a solidly rotating liquid bridge consisting of inviscid liquid is determined for pitch excitation about its undisturbed center of mass. Free liquid surface displacement and velocity distribution has been determined in the elliptic (>2₀) and hyperbolic (<2₀) excitation frequency range.List of symbols a radius of liquid column - h length of column - I ₁ modified Besselfunction of first kind and first order - J ₁ Besselfunction of first kind and first order - r, ,z cylindrical coordinates - t time - u, v, w velocity distribution in radial-, circumferential-and axial direction resp. - mass density of liquid - free surface displacement - velocity potential - ₀ rotational excitation angle - ₀ velocity of spin - forcing frequency - _1n natural frequency - surface tension - acceleration potential - for elliptic range >2₀ - for hyperbolic range >2₀     

Piezoelectric and mechanical properties of ceria-doped lead zirconate titanate ceramics

Phases, microstructures and properties of lead-zirconate-titanate (PZT) ceramics with the compositions Pb(Zr_0.535– Ce Ti_0.465) O₃ where =0.0, 0.001, 0.01, 0.02 and 0.05 were studied. Rhombohedral and tetragonal phases were present at =0.0. The amount of the rhombohedral phase increased with increasing , and only the tetragonal phase was present for >0.001. Thec/a ratio of the tetragonal phase also increases with increasing . Particles of CeO₂ were found to be present in compositions with >0.01, indicating that the solubility of CeO₂ is less than 1a/o on the metals basis. The piezoelectric and electromechanical constants achieved maximum values for =0.001. The hardness increased monotonically with increasing . The modulus of rupture and the fracture toughness, however, went through a minimum and both stayed lower than their values for =0.     

Temperature effects on the properties of Ge thin films

The effects of substrate temperature (T_s) on the properties of vacuum evaporated p-type Ge thin films have been investigated for 25s<400°C. Increase in the substrate temperature improves the crystallinity and increases the grain size resulting a gradual change from amorphous to polycrystalline structure which was attained above a substrate temperature of 225°C. Low resistive (1×10^–2 ohm-cm) and high mobility (280 cm²/V·s) films were obtained at T_s=400°C. It has been observed that the conduction mechanism in polycrystalline films was dominated successively by hopping, tunneling and thermionic emission as the sample temperature was increased from 40 to 400 K. In amorphous samples, conduction was described in terms of different hopping mechanisms.     

Polymorphism in Sr3Fe2O7−x

The compound Sr₃Fe₂O_7–x , with variable iron valence, was investigated by X-ray powder techniques, both at room and at high temperatures. If the material is examined in massive form, a single phase called -Sr₃Fe₂O_7–x appears as previously reported in the literature. This -phase is tetragonal and exhibits the lattice parameters: a=3.874 and c=40.314 Å. Two other phases, called and -Sr₃Fe₂O_7–x , respectively, can be obtained on heating the finely powdered material when laid on a flat platinum support. The form is stable up to 1275° C, while the form is revealed only above 1275° C and changes always into -Sr₃Fe₂O_7–x when quenched. Both and phases are tetragonal, with a=4.001 and c= 58.251 for the form and a=4.013, c=57.092 Å for the form. The transition involves a true phase equilibrium, while the transformation is possible only by means of a suitable mechanical treatment of the material.