Inside Front Cover: Efficient Top‐Gate,Ambipolar, Light‐Emitting Field‐Effect Transistors Based on a Green‐Light‐Emitting Polyfluorene (Adv. Mater. 20/2006)

The inside cover shows light emission from within the channel of an ambipolar field‐effect transistor based on the green‐light‐emitting conjugated polymer F8BT in a bottom contact/top gate structure, as reported by Sirringhaus and co‐workers on p. 2708. It visually demonstrates the formation of separate electron and hole accumulation layers in ambipolar transistors and radiative recombination of charge carriers where the two layers meet (schematic), which is controlled by the applied voltages.