Semiconducting Nanowire‐Based Optoelectronic Fibers

The recent ability to integrate semiconductor‐based optoelectronic functionalities within thin fibers is opening intriguing opportunities for flexible electronics and advanced textiles. The scalable integration of high‐quality semiconducting devices within functional fibers however remains a challenge. It is difficult with current strategies to combine high light absorption, good microstructure and efficient electrical contact. The growth of semiconducting nanowires is a great tool to control crystal orientation and ensure a combination of light absorption and charge extraction for efficient photodetection. Thus far, however, leveraging the attributes of nanowires has remained seemingly incompatible with fiber materials, geometry, and processing approaches. Here, the integration of semiconducting nanowire‐based devices at the tip and along the length of polymer fibers is demonstrated for the first time. The scalable thermal drawing process is combined with a simple sonochemical treatment to grow nanowires out of electrically addressed amorphous selenium domains. First principles density‐functional theory calculations show that this approach enables to tailor the surface energy of crystal facets and favors nanowire growth along a preferred orientation, resulting in fiber‐integrated devices of unprecedented performance. This novel platform is exploited to demonstrate an all‐fiber‐integrated fluorescence imaging system, highlighting novel opportunities in sensing, advanced optical probes, and smart textiles.     

Silicon nanowire transistors with a channel width of 4 nm fabricated by atomic force microscope nanolithography

The emergence of an ultrasensitive sensor technology based on silicon nanowires requires both the fabrication of nanoscale diameter wires and the integration with microelectronic processes. Here we demonstrate an atomic force microscopy lithography that enables the reproducible fabrication of complex single-crystalline silicon nanowire field-effect transistors with a high electrical performance. The nanowires have been carved from a silicon-on-insulator wafer by a combination of local oxidation processes with a force microscope and etching steps. We have fabricated and measured the electrical properties of a silicon nanowire transistor with a channel width of 4 nm. The flexibility of the nanofabrication process is illustrated by showing the electrical performance of two nanowire circuits with different geometries. The fabrication method is compatible with standard Si CMOS processing technologies and, therefore, can be used to develop a wide range of architectures and new microelectronic devices.     

纳米线透明导电薄膜的制备及在光电器件中的应用

基于纳米线的透明导电薄膜具有光电性能优异、制备成本低廉以及可用于制备柔性器件等优点,在透明导电薄膜材料领域占据重要地位。文章着眼于阐述纳米线透明导电薄膜的制备及其在光电器件中的应用。首先详细介绍了滴涂、浸渍、抽滤、迈耶棒涂布、旋涂、喷印、印刷等7种制备纳米线透明导电薄膜的方法。光电器件是应用透明导电薄膜的重要领域,文章还介绍了纳米线透明导电薄膜在太阳能电池和电致发光器件中的应用。纳米线透明导电薄膜中,银纳米线和铜纳米线透明导电薄膜最受关注,其制备工艺日趋完善,有望率先在工业应用中取得突破。     

Copper oxide nanowires: a review of growth

Cuprous oxide (Cu(2)O) and cupric oxide (CuO) nanowires have started playing important roles in energy conversion devices and optoelectronic devices. Although the desired advanced properties have been demonstrated, these materials cannot yet be produced in large-bulk quantities in order to bridge the technological transfer gap for wider use. In this respect, the quest for the most efficient synthesis process which yields not only large quantities but also high quality and advanced material properties continues. This paper gives an extensive review of copper oxide nanowire (NW) synthesis by all methods and routes by which various researchers have obtained their nanomaterial. These methods are critically overviewed, evaluated and compared. Methods of copper oxide NW growth include wet-chemical methods based on pure solution growth, electrochemical and hydrothermal routes as well as thermal and plasma oxidation methods. In terms of advanced nanowire synthesis, the fast thermal method or direct plasma oxidation as well as the combined hybrid wet-chemical method in which copper hydroxide NWs are produced and sequentially transformed by plasma oxidation which produces Cu(2)O NWs are seen as the most promising methods to explore in the near future. These methods not only yield large quantities of NWs, but produce high quality material with advanced properties.     

Fabrication of suspended silicon nanowire arrays

A method to fabricate suspended silicon nanowires that are applicable to electronic and electromechanical nanowire devices is reported. The method allows for the wafer-level production of suspended silicon nanowires using anisotropic etching and thermal oxidation of single-crystal silicon. The deviation in width of the silicon nanowire bridges produced using the proposed method is evaluated. The NW field-effect transistor (FET) properties of the device obtained by transferring suspended nanowires are shown to be practical for useful functions.     

Enhanced Optoelectronic Performance of a Passivated Nanowire‐Based Device: Key Information from Real‐Space Imaging Using 4D Electron Microscopy

Managing trap states and understanding their role in ultrafast charge‐carrier dynamics, particularly at surface and interfaces, remains a major bottleneck preventing further advancements and commercial exploitation of nanowire (NW)‐based devices. A key challenge is to selectively map such ultrafast dynamical processes on the surfaces of NWs, a capability so far out of reach of time‐resolved laser techniques. Selective mapping of surface dynamics in real space and time can only be achieved by applying four‐dimensional scanning ultrafast electron microscopy (4D S‐UEM). Charge carrier dynamics are spatially and temporally visualized on the surface of InGaN NW arrays before and after surface passivation with octadecylthiol (ODT). The time‐resolved secondary electron images clearly demonstrate that carrier recombination on the NW surface is significantly slowed down after ODT treatment. This observation is fully supported by enhancement of the performance of the light emitting device. Direct observation of surface dynamics provides a profound understanding of the photophysical mechanisms on materials' surfaces and enables the formulation of effective surface trap state management strategies for the next generation of high‐performance NW‐based optoelectronic devices.     

Bringing order to the world of nanowire devices by phase shift lithography

Semiconductor nanowire devices have several properties which match future requirements of scaling down the size of electronics. In typical microelectronics production, a number of microstructures are aligned precisely on top of each other during the fabrication process. In the case of nanowires, this mandatory condition is still hard to achieve. A technological breakthrough is needed to accurately place nanowires at any specific position and then form devices in mass production. In this article, an upscalable process combining conventional micromachining with phase shift lithography will be demonstrated as a suitable tool for nanowire device technology. Vertical Si and ZnO nanowires are demonstrated on very large (several cm(2)) areas. We demonstrate how the nanowire positions can be controlled, and the resulting nanowires are used for device fabrication. As an example Si/ZnO heterojunction diode arrays are fabricated. The electrical characterization of the produced devices has also been performed to confirm the functionality of the fabricated diodes.     

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications

The incorporation of Au during vapor-liquid-solid nanowire growth might inherently limit the performance of nanowire-based devices. Here, we assess the material quality of Au-assisted and Au-free grown GaAs/(Al,Ga)As core-shell nanowires using photoluminescence spectroscopy. We show that at room temperature, the internal quantum efficiency is systematically much lower for the Au-assisted nanowires than for the Au-free ones. In contrast, the optoelectronic material quality of the latter is comparable to that of state-of-the-art planar double heterostructures.     

Formation of novel homojunction device using p-type ZnO:Co shell coating on n-type ZnO nanowires

P-type ZnO:Co thin film was spin coated onto n-type ZnO nanowire arrays to form a novel ZnO homojunction device using a fully solution-based process. The optoelectronic and structural properties of the homojunction device were extensively characterized by using scanning electron microscopy, X-ray diffraction, energy dispersive spectroscopy and photoluminescence emission measurement and current voltage measurement. It was found that the applied ZnO:Co coating bundles the nanowires together and suppress surface defects on the nanowire. Dark and illuminated device confirms the pn junction formation and its light sensitivity properties.     

Flexible Transparent and Free‐Standing SiC Nanowires Fabric: Stretchable UV Absorber and Fast‐Response UV‐A Detector

Transparent and flexible materials are desired for the construction of photoelectric multifunctional integrated devices and portable electronics. Herein, 2H‐SiC nanowires are assembled into a flexible, transparent, self‐standing nanowire fabric (FTS‐NWsF). The as‐synthesized ultralong nanowires form high‐quality crystals with a few stacking faults. The optical transmission spectra reveal that FTS‐NWsF absorbs most incident 200–400 nm light, but remains transparent to visible light. A polydimethylsiloxane (PDMS)–SiC fabric–PDMS sandwich film device exhibits stable electrical output even when repeatedly stretched by up to 50%. Unlike previous SiC nanowires in which stacking faults are prevalent, the transparent, stretchable SiC fabric shows considerable photoelectric activity and exhibits a rapid photoresponse (rise and decay time < 30 ms) to 340–400 nm light, covering most of the UV‐A spectral region. These advances represent significant progress in the design of functional optoelectronic SiC nanowires and transparent and stretchable optoelectronic systems.     

Edge‐Epitaxial Growth of InSe Nanowires toward High‐Performance Photodetectors

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO₂/Si substrate due to lattice mismatch. Here, a catalysis‐free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO₂/Si substrates through edge‐homoepitaxial growth. Parallel InSe nanowires are achieved further on SiO₂/Si substrates through controlling growth conditions. The underlying growth mechanism is attributed to a selenium self‐driven vapor–liquid–solid process, which is distinct from the conventional metal‐catalytic vapor–liquid–solid method widely used for growing Si and III–V nanowires. Furthermore, it is demonstrated that the as‐grown InSe nanowire‐based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A W^?1, ultrahigh detectivity of 1.57 × 10¹⁴ Jones, and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as‐grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge‐homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO₂/Si substrates.     

Assessing charge carrier trapping in silicon nanowires using picosecond conductivity measurements

Free-standing semiconductor nanowires on bulk substrates are increasingly being explored as building blocks for novel optoelectronic devices such as tandem solar cells. Although carrier transport properties, such as mobility and trap densities, are essential for such applications, it has remained challenging to quantify these properties. Here, we report on a method that permits the direct, contact-free quantification of nanowire carrier diffusivity and trap densities in thin (～25 nm wide) silicon nanowires-without any additional processing steps such as transfer of wires onto a substrate. The approach relies on the very different terahertz (THz) conductivity response of photoinjected carriers within the silicon nanowires from those in the silicon substrate. This allows quantifying both the picosecond dynamics and the efficiency of charge carrier transport from the silicon nanowires into the silicon substrate. Varying the excitation density allows for quantification of nanowire trap densities: for sufficiently low excitation fluences the diffusion process stalls because the majority of charge carriers become trapped at nanowire surface defects. Using a model that includes these effects, we determine both the diffusion constant and the nanowire trap density. The trap density is found to be orders of magnitude larger than the charge carrier density that would be generated by AM1.5 sunlight.     

Evaluation of metal-nanowire electrical contacts by measuring contact end resistance

It is known, but often unappreciated, that the performance of nanowire (NW)-based electrical devices can be significantly affected by electrical contacts between electrodes and NWs, sometimes to the extent that it is really the contacts that determine the performance. To correctly understand and design NW device operation, it is thus important to carefully measure the contact resistance and evaluate the contact parameters, specific contact resistance and transfer length. A four-terminal pattern or a transmission line model (TLM) pattern has been widely used to measure contact resistance of NW devices and the TLM has been typically used to extract contact parameters of NW devices. However, the conventional method assumes that the electrical properties of semiconducting NW regions covered by a metal are not changed after electrode formation. In this study, we report that the conventional methods for contact evaluation can give rise to considerable errors because of an altered property of the NW under the electrodes. We demonstrate that more correct contact resistance can be measured from the TLM pattern rather than the four-terminal pattern and correct contact parameters including the effects of changed NW properties under electrodes can be evaluated by using the contact end resistance measurement method.     

Synthesis,Characterizations and Applications of Cadmium Chalcogenide Nanowires:A Review

Cadmium chalcogenide nanowires have demonstrated superior electrical and optical properties,and have emerged as prominent building blocks for nanoscale electronic and optoelectronic devices.In addition to the effort devoted to advance techniques of fabricating high quality nanowires,much has been endeavored to elucidate their unique physical properties for better design and development of functional devices with low power consumption and high performance.Herein,this article provides a comprehensive review of the forefront research on cadmium chalcogenide nanowires,ranging from material synthesis,property characterizations,and device applications.     

Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth

Vertically aligned, catalyst-free semiconducting nanowires hold great potential for photovoltaic applications, in which achieving scalable synthesis and optimized optical absorption simultaneously is critical. Here, we report combining nanosphere lithography (NSL) and selected area metal-organic chemical vapor deposition (SA-MOCVD) for the first time for scalable synthesis of vertically aligned gallium arsenide nanowire arrays, and surprisingly, we show that such nanowire arrays with patterning defects due to NSL can be as good as highly ordered nanowire arrays in terms of optical absorption and reflection. Wafer-scale patterning for nanowire synthesis was done using a polystyrene nanosphere template as a mask. Nanowires grown from substrates patterned by NSL show similar structural features to those patterned using electron beam lithography (EBL). Reflection of photons from the NSL-patterned nanowire array was used as a measure of the effect of defects present in the structure. Experimentally, we show that GaAs nanowires as short as 130 nm show reflection of <10% over the visible range of the solar spectrum. Our results indicate that a highly ordered nanowire structure is not necessary: despite the "defects" present in NSL-patterned nanowire arrays, their optical performance is similar to "defect-free" structures patterned by more costly, time-consuming EBL methods. Our scalable approach for synthesis of vertical semiconducting nanowires can have application in high-throughput and low-cost optoelectronic devices, including solar cells.     

Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles

Efficient characterization of semiconductor nanowires having complex dopant profiles or heterostructures is critical to fully understand these materials and the devices built from them. Existing electrical characterization techniques are slow and laborious, particularly for multisegment nanowires, and impede the statistical understanding of highly variable samples. Here, it is shown that electro‐orientation spectroscopy (EOS)—a high‐throughput, noncontact method for statistically characterizing the electrical properties of entire nanowire ensembles—can determine the conductivity and dimensions of two distinct segments in individual Si nanowires with axially encoded dopant profiles. This analysis combines experimental measurements and computational simulations to determine the electrical conductivity of the nominally undoped segment of two‐segment Si nanowires, as well as the ratio of the segment lengths. The efficacy of this approach is demonstrated by comparing results generated by EOS with conventional four‐point‐probe measurements. This work provides new insights into the control and variability of semiconductor nanowires for electronic applications and is a critical first step toward the high‐throughput interrogation of complete nanowire‐based devices.     

The impact of nanocontact on nanowire based nanoelectronics

Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.     

Electrical properties of self-assembled branched InAs nanowire junctions

We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.     

A Transparent Nanowire‐Based Cell Impalement Device Suitable for Detailed Cell–Nanowire Interaction Studies

A method to fabricate inexpensive and transparent nanowire impalement devices is invented based on CuO nanowire arrays grown by thermal oxidation. By employing a novel process the nanowires are transferred to a transparent, cell‐compatible epoxy membrane. Cargo delivery and detailed cell‐nanowire interaction studies are performed, revealing that the cell plasma membrane tightly wraps the nanowires, while cell membrane penetration is not observed. The presented device offers an efficient investigation platform for further optimization, leading towards a simple and versatile impalement delivery system.     

Photoconductive characteristic in individual WO(3-x) nanowire

Tungsten Oxide nanowires, with their natural excellent structure, possess unique physical and chemical properties. In this paper, photoconductivity of single tungsten trioxide nanowire (WO3 NW) and single tungsten suboxide nanowire (WO(3-x) NW) have been studied respectively on a photoconductivity testing system. Under 514 nm wavelength laser illumination, an unsaturated photocurrent and a slow photoconductive responsivity could be expressed in single WO3 NW device. In WO(3-x) NW device, photoconductive responsivity was determined by the illuminating position. About 100 nA photocurrent could be generated and a fast optoelectric responsivity with a recover time about 90 ms from the device was observed. Not only photoconductive effect but also the photovoltaic effect was obtained from individual WO(3-x) NW device. According to the results of X-ray photoelectron spectroscopy, the mechanisms of photoconductive and photovoltaic effects in these two kinds of devices have been discussed and the oxygen vacancy played an important role in the photoconductive phenomenon. All these effects could be of practical use in the design and fabrication of photodetectors based on single tungsten oxide nanowire.