含各向异性特异材料三明治结构的Goos-Hnchen位移研究

采用稳态相位法研究了正折射率材料/各向异性特异材料/金属三明治结构反射波的Goos-Hnchen(GH)位移.分别给出了在第一界面处发生全反射和部分反射情况下GH位移的解析表达式,并分析了含有4种不同类型特异材料三明治结构反射波产生GH位移的条件及GH位移的正负情况.通过数值计算系统研究了各向异性特异材料的光轴与界面的夹角α、入射角φ以及特异材料厚度d对GH位移的影响,计算结果与理论分析有很好的吻合.通过对特异材料结构中GH位移的研究,将有利于特异材料在微波或光学系统中的应用.     

古斯汉欣位移研究进展

本文通过K. Artmann的稳定位相理论对古斯汉欣(Goos-H?nchen,GH)位移进行了定性解释和定量分析;总结了国内外相关研究工作,介绍了GH位移在金属界面、介质光栅结构、多层金属包络结构、光子晶体材料、手性材料等界面理论研究和实验测量结果;综述了GH位移在不同波段特别是太赫兹波段的研究成果;GH位移的测量方法有直接测量和干涉测量2种,本文对此做了总结和解释;最后,以温度传感和浓度传感方面的研究结果为例介绍了GH位移的应用。     

孔型对金属介质金属三明治结构超材料的透射率和负折射率的影响

通过改变长方形孔的长度,利用数值模拟研究了金属-介质-金属三明治结构超材料的透射率,负折射(NRI)率和品质因数(FOM)等性质.研究结果表明,随着长方形孔的长度的增大,低频透射峰和最大透射峰都出现了红移现象.长方形孔的负折射率和负折射带宽则随着长方形孔的长度的增大而减小.这意味着可以通过调节金属-介质-金属三明治结构超材料的孔阵列的长度获得较高的透射率或者负折射率.这些结果为开发太赫兹范围的光电器件提供可能的理论.     

含有损耗双负介质的棱镜波导中古斯汉森位移特性研究

研究含有损耗的双负介质导波层的棱镜波导耦合系统中的古斯汉森(Goos-H?nchen,GH)位移增强效应。采用稳态相位理论得出了GH位移的表达式,并推导出获得较大GH位移的充分条件;通过仿真分析,研究了介电常数、包层和导波层的厚度对GH位移的影响,同时验证了增强GH位移的充分条件的有效性。结果表明,利用双负介质做棱镜波导系统的导波层可以有效克服材料自身带来的损耗,实现较大值的GH位移;同时,系统中的GH位移极大值对包层和导波层的厚度的微弱变化(1纳米)十分敏感,可用来制作高灵敏度的表面平整度探测器。     

磁性材料、超导材料和器件

TM271 02020103高灵敏度Ni过渡层Co/Cu/Co三明治的巨磁电阻效应及其来源/李铁(中国科学院上海冶金研卿.)11中国科学E辑一2001,31(4).一314一322通过制备不同生长阶段不同厚度Ni过渡层C。/Cu/Co三明治,利用原子力显微镜、X射线衍射和高分辨电子显微镜等手段,系统地研究了Ni过渡层对材料表面形貌、界面,以及上下磁层磁性行为的影响,从而对高灵敏度的Ni过渡层C o/Cu/C。三明治巨磁电阻效应的来源进行了深入的研究.图6表1参17(木)TM274,TN911.7 020201.06粗糙表面铁磁性棒材微裂纹书翻0与信号处理技术研究/于敏,胡红利,孔忻,于轮元(西…     

一种具有“8悬臂梁-质量块”结构的新型硅微加速度计

提出了一种具有"8悬臂梁-质量块"结构的新型三明治式硅微机械电容式加速度计,用微机械加工工艺在(111)硅片上制作出了具有信号输出的器件.该加速度计的惯性质量块由同一(111)硅片上下表面对称分布的8根悬臂梁支撑.这些悬臂梁是利用(111)硅在KOH溶液中的各向异性腐蚀特性结合深反应离子刻蚀(DRIE)实现的,其尺度精确可控,保证了结构的对称性.该加速度计的谐振频率为2.08kHz,品质因子Q为21.4,灵敏度为93.7mV/g.     

一种具有"8悬臂梁-质量块"结构的新型硅微加速度计

提出了一种具有"8悬臂梁-质量块"结构的新型三明治式硅微机械电容式加速度计,用微机械加工工艺在(111)硅片上制作出了具有信号输出的器件.该加速度计的惯性质量块由同一(111)硅片上下表面对称分布的8根悬臂梁支撑.这些悬臂梁是利用(111)硅在KOH溶液中的各向异性腐蚀特性结合深反应离子刻蚀(DRIE)实现的,其尺度精确可控,保证了结构的对称性.该加速度计的谐振频率为2.08kHz,品质因子Q为21.4,灵敏度为93.7mV/g.     

改进型Ge浓缩技术制备SGOI及其机理

对Ge浓缩技术进行改进,通过对Si/SiGe/Si三明治结构氧化退火,成功制备了Ge含量高达18%的SGOI材料.实验结果表明:顶层的Si可以有效抑制SiGe层氧化初期Ge元素的损失,退火过程有助于Ge元素在SiGe层中的均匀分布,同时也减轻了Ge元素在氧化层下的聚集.在高温条件(1150℃)下制备的SGOI材料应力完全释放,几乎没有引入位错.     

改进型Ge浓缩技术制备SGOI及其机理

对Ge浓缩技术进行改进,通过对Si/SiGe/Si三明治结构氧化退火,成功制备了Ge含量高达18%的SGOI材料.实验结果表明:顶层的Si可以有效抑制SiGe层氧化初期Ge元素的损失,退火过程有助于Ge元素在SiGe层中的均匀分布,同时也减轻了Ge元素在氧化层下的聚集.在高温条件(1150℃)下制备的SGOI材料应力完全释放,几乎没有引入位错.     

电气和电子工程用材料科学

TB43,TM936 00010032用转矩仪测皿薄膜磁各向异性的研究/张宝峰,曹文斗,魏立锋(天津大学)11仪器仪表学报一1 999,20(4)一398一400该文讨论由转矩仪测量薄膜材料磁各向异性的一个新方法,当单轴各向异性膜材料的本征易轴随机取向与膜平面的夹角为a时,通过测量本征易轴和形状各向异性易轴合成的表观易轴的取向(与膜平面间的夹角)以及常数值,就可以计算得到膜材料的本征磁各向异性常数和易轴的空间取向.图4参6(木)利用高能离子注人技术系统地研究了不同剂量、不同种类离子注入对C60薄膜结构的影响,并利用Raman光谱对其结构进行分析.结果表明:…     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

Band edge Complementary Metal Oxide Semiconductor (CMOS) devices are obtained by insertion of a thin LaO_x layer between the high-k (HfSiO) and metal gate (TiN). High temperature post deposition anneal induces Lanthanum diffusion across the HfSiO towards the SiO₂ interfacial layer, as shown by Time of Flight Secondary Ions Mass Spectroscopy (ToF-SIMS) and Atom Probe Tomography (APT). Fourier Transform Infrared Spectroscopy in Attenuated Total Reflexion mode (ATR-FTIR) shows the formation of La-O-Si bonds at the high-k/SiO₂ interface. Soft X-ray Photoelectron Spectroscopy (S-XPS) is performed after partial removal of the TiN gate. Results confirm La diffusion and changes in the La chemical environment.     

The C-V-f and G/ω-V-f characteristics of Al/SiO2/p-Si (MIS) structures

The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Al/SiO₂/p-Si metal-insulator-semiconductor (MIS) structures has been investigated taking into account the effect of the series resistance (R_s) and interface states (N_ss) at room temperature. The C-V and G/ω-V measurements have been carried out in the frequency range of 1 kHz to 1 MHz. The frequency dispersion in capacitance and conductance can be interpreted only in terms of interface states and series resistance. The N_ss can follow the ac signal and yield an excess capacitance especially at low frequencies. In low frequencies, the values of measured C and G/ω decrease in depletion and accumulation regions with increasing frequencies due to a continuous density distribution of interface states. The C-V plots exhibit anomalous peaks due to the N_ss and R_s effect. It has been experimentally determined that the peak positions in the C-V plot shift towards lower voltages and the peak value of the capacitance decreases with increasing frequency. The effect of series resistance on the capacitance is found appreciable at higher frequencies due to the interface state capacitance decreasing with increasing frequency. In addition, the high-frequency capacitance (C_m) and conductance (G_m/ω) values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance. Experimental results show that the locations of N_ss and R_s have a significant effect on electrical characteristics of MIS structures.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>