Structural, mechanical and corrosion properties of TiOxNy/ZrOxNy multilayer coatings

Results on the deposition and characterization of TiO_xN_y/ZrO_xN_y multilayers, with bilayer periods of 20 and 400 nm, are presented. The coatings were deposited on TiNiNb alloy substrates by the pulsed magnetron sputtering method. The elemental composition, hardness, adhesion and corrosion resistance of the coatings were analyzed.As resulted from the XPS analysis, the individual layers consisted of a mixture of titanium or zirconium oxynitrides and corresponding oxides. X-ray analysis revealed that the coatings were amorphous. Only slight differences between the microhardness and adhesion values of the coatings with small and large bilayer period Λ were found. The experiments also showed that the multilayered coatings improved the corrosion resistance of the uncoated alloy and reduced the amount of ion release in artificial body fluids.     

MOCVD growth and characterizations of BxAl1−xAs and BxAl1−x−yInyAs alloys

Zinc-blende B_xAl_1−xAs and B_xAl_1−x−yIn_yAs alloys have been grown on exactly oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). The influence of susceptor coating, growth temperature and gas-phase boron mole fraction on boron incorporation into AlAs has been comprehensively investigated. It has been found that boron incorporation into AlAs could be enhanced and the optimal growth temperature range of B_xAl_1−xAs alloys changed from 580 °C to 610 °C when SiC-coated graphite susceptors were replaced by the non-coated ones. In this study, the maximum boron composition x of 2.8% was achieved for the pseudomorphically strained B_xAl_1−xAs alloys. AFM measurements show that RMS roughness of B_xAl_1−xAs alloys increased sharply with the increase of gas-phase boron mole fraction. Raman spectra of B_xAl_1−xAs alloys show a linear increase of the BAs shift with boron composition x. Based on BAlAs deposition, bulk B_xAl_1−x−yIn_yAs (x = 1.9%) quaternary alloy was grown lattice-matched to GaAs successfully. Moreover, 10-period BAlAs/GaAs and BAlInAs/GaAs MQW heterostructures were also demonstrated.     

High strength and good ductility of casting Al-Cu alloy modified by PrxOy and LaxOy

A modified Al-Cu alloy with high tensile strength and ductility of about 574.0 MPa and 10.4%, respectively, was obtained by adding multiple rare earth oxides (Pr_xO_y and La_xO_y) as modifier. Compared with the unmodified Al-Cu alloy, the tensile strength and ductility of the modified sample were increased by 24.3% and 42.5%, respectively. The improvement both in the strength and ductility may attribute to the finer crystal grains and dendrites, more homogeneously distributed θ′ phase precipitates and the intermetallic compounds formed at the crystal grain boundaries as well as in the space of the dendrites.     

铸造CAD／CAE／ES／PDM／ERP一体化及集成技术研究

详细阐述了支持铸造工艺设计、工艺优化、工艺信息管理、企业管理的系统研究与应用特点,在此基础上提出了基于PDM平台的铸造CAD／CAE／ES／PDM／ERP一体化框架体系,在华铸实验室现有软件体系（华铸CAE／CAD／PDM／ERP）及应用的基础上,设计与实现了一体化系统关键点及其集成技术。最后,以若干实际案例来证明本研究一体化系统的实用性。     

Hydrothermal synthesis of superconductors Ba1−xKxBiO3 and double perovskites Ba1−xKxBi1−yNayO3

Superconductors Ba_1−xK_xBiO₃ and body-centered double perovskites Ba_1−xK_xBi_1−yNa_yO₃ have been selectively synthesized by a facile hydrothermal route. The appropriate ratio and adding sequence of initial reagents, alkalinity, reaction temperature and time are the critical factors that influence the crystal growth of the compounds. The purity and homogeneity of the crystals were detected by the ICP, SEM, EDX and TEM studies. Magnetic measurements show that the superconducting transition temperatures T_C of Ba_1−xK_xBiO₃ decrease from 22 K (for x = 0.35) to 8 K (for x = 0.55) with increasing the K doping level.     

生物医用NiTi形状记忆合金腐蚀研究进展

镍钛形状记忆合金(NiTi-SMA)具有较好的耐腐蚀和机械性能,在口腔和临床医学中有着大量而广泛的应用。NiTi-SMA腐蚀后释放Ni²⁺会引发细胞毒性和过敏反应,进一步提高NiTi-SMA的耐蚀性是目前生物医学材料领域发展的核心之一。本文对近年来国内外有关口腔医学和临床医学中常用NiTi-SMA的腐蚀研究现状进行了总结,同时也对NiTi-SMA增材制造及表面改性技术进行了评述,以期为开发高性能抗腐蚀生物医用NiTi-SMA提供一定的指导意义。     

Li掺杂Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3高熵陶瓷的制备及介电性能研究

近年来,在高熵合金基础上发展起来的高熵陶瓷逐渐引起了研究者的广泛关注,其出现为开发高性能的无机非金属材料提供了新的设计思路。本文采用固相法制备了BaMO3基钙钛矿型高熵陶瓷Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li(1/7-x))O3 (x = 0, 2.3%, 5.3%, 8.3%, 11.3%),并研究了Li含量对高熵陶瓷物相结构、微观形貌及介电性能的影响。结果表明,Li含量对陶瓷结构的影响不大,陶瓷均保持立方钙钛矿结构,且无杂相产生;陶瓷的晶粒尺寸相对较均匀。当x = 0时,即B位七元等摩尔比Ba(Ti1/7Sn1/7Zr1/7Hf1/7Nb1/7Ga1/7Li1/7)O3高熵陶瓷,其介电常数达到了最大值2920 (@100 Hz),相较于已报道的不掺Li的六元高熵钙钛矿陶瓷Ba(Ti1/6Sn1/6Zr1/6Hf1/6Nb1/6Ga1/6)O3提升了近50倍。     

Ti/Mn(0.8-x)SnxIr0.2O2电极的电容性能研究

采用热分解法制备了Ti/Mn_(0.8-x)SnxIr_0.2O_2三元氧化物电极材料。通过扫描电子显微镜,X射线衍射、循环伏安和交流阻抗谱等分析了Ti/Mn_(0.8-x)Sn_xIr_0.2O_2电极材料的组织结构和电容性能。结果表明:随SnO_2含量增加,氧化物涂层中正方结构Mn_3O_4相逐渐减少,正方结构SnO_2相逐渐增加。与锰铱二元氧化物相比,SnO_2的加入可明显改善电极材料在0~0.5 V区间的电流响应,并促进氧化锰活性的发挥,但在一定程度上也抑制了氧化铱的活性。SnO_2的加入也改变了电极材料的电荷转移电阻、弛豫时间常数、以及不同频率下的电容响应速度。相比其它电极材料,Ti/Ir_0.2Mn_0.6Sn_0.2O_2电极材料在低频范围(≤1 Hz)有更好的电容响应和更高的活性,因而获得最高的比电容值。     

CAD／CAE／CAM／PDM应用分析

分析了CAD／CAE／CAMP／PDM的作用和关系,介绍了常用CAD／CAE／CAMPDM软件及选型方法,为企业建立和应用CAD／CAE／CAM／PDM提供了依据。     

Thermoelectric properties of Sn1−x−yTiySbxO2 ceramics

Thermoelectric properties of Sn_1−x−yTi_y Sb_xO₂ ceramics were investigated in detail. The addition of Sb into SnO₂ matrix increased the electric conductivity, σ. The increase in the σ value should be caused by the increase in the carrier concentration. The Seebeck coefficients of all the samples were negative, which means that these samples have n-type conduction. The samples of this study have porous structure. The maximum Z value of all the samples measured in this study was 2.4 × 10⁻⁵ K⁻¹.     

Magnetic phase diagrams of the TbRh2−xPdxPdxSi2 and TbRu2−xPdxSi2 systems

The a.c. susceptibility and high field magnetization on TbRh_2−xPd_xPd_xSi₂ and TbRu_2−xPd_xSi₂ compounds were investigated up to 140 kOe. The (T,x) magnetic phase diagrams were determined. For both systems, an increase in the Pd content causes a decrease in the Néel temperature and changes the magnetization curves.     

Si3N4/Ti/Cu/Ni/Cu/Ti/Si3N4二次部分瞬间液相连接强度

采用Ti/Cu／Ni中间层对Si3N4陶瓷进行二次部分瞬间液相(PTLP)连接，研究连接工艺参数对Si3N4／Ti/Cu／Ni连接强度的影响，同时研究了连接强度随试验温度的变化规律。结果表明，在该试验条件下，室温连接强度随着二次连接温度的提高和二次保温时间的延长而提高，改变连接工艺参数对Si3N4／Ti/Cu／Ni二次PTLP连接界面反应层厚度无明显影响；连接强度在试验温度400℃时达到最大，随后随试验温度升高，连接强度降低，但在800℃前，其高温强度具有很好的稳定性。     

Power factor of La1−xSrxFeO3 and LaFe1−yNiyO3

The electrical conductivity (σ), Seebeck coefficient (S), and power factor (σS²) of perovskite-type LaFeO₃, La_1−xSr_xFeO₃ [0.1 ≤ x ≤ 0.4] and LaFe_1−yNi_yO₃ [0.1 ≤ y ≤ 0.6] were investigated in the temperature range of 300–1100 K to explore their possibility as thermoelectric materials. The electrical conductivity of LaFeO₃ showed semiconducting behavior, and its Seebeck coefficient changed from positive to negative around 650 K with increasing temperature. The electrical conductivity of LaFeO₃ increased with the substitutions of Sr and Ni atoms, while its Seebeck coefficient decreased. The Seebeck coefficient of La_1−xSr_xFeO₃ was positive, whereas that of LaFe_1−yNi_yO₃ changed from positive to negative with increasing Ni content. The substitutions of Sr and Ni were effective in increasing the power factor of LaFeO₃; 0.0053 × 10⁻⁴ Wm⁻¹ K⁻² for LaFeO₃ (1050 K), 1.1 × 10⁻⁴ Wm⁻¹ K⁻² for La_1−xSr_xFeO₃ (x = 0.1 at 1100 K) and 0.63 × 10⁻⁴ Wm⁻¹ K⁻² for LaFe_1−yNi_yO₃ (y = 0.1 at 1100 K).     

Structural analysis of sputtered (W-C)1−xMx (MFe, Co) films with 0x0.20

Structural characterization of (W-C)_1-xM_x (MFe, Co) films with 0x0.20 was carried out using electron probe microanal ysis (EPMA), X-ray diffraction (XRD) and transmission electron microscopy-electron diffraction (TEM-ED). The results showed that the structure of these films depends on the percentage of iron and cobalt and becomes amorphous with increasing content of these elements. The microstructure of the crystalline coatings was found to be composed of small grains of β-WC_1-x with a high number of defects. A strong β-WC_1-x[311] texture was observed for iron and cobalt contents around 5.5 at.%. The films richer in iron and cobalt showed typical amorphous XRD and ED patterns, exhibiting two broad peaks and two wide diffuse rings respectively. Moreover, bright-field analysis revealed fairly contrasted images, the structure of these films being difficult to resolve.     

SnxSy compounds growth by controlled sulfurisation of SnO2

In this work, thin layers of semiconducting tin sulfide Sn_xS_y compounds have been prepared by sulfrisation of tin oxide SnO₂ on glass substrate. Structural studies showed that, depending on sulfur supply concentration, a mixture of SnS₂ and Sn₂S₃ is obtained at an annealing temperature of 550 °C for 2 h. From the transmission and reflectance spectra, the extinction coefficient and refractive index were calculated as guides to understanding crystal growth kinetics. On the other hand, the exploitation of these optical measurements along with optothermal investigations showed that the electronic transitions in these layers were of allowed direct type and exhibit two gaps indicating the presence of two competent sulfide phases: SnS₂ and Sn₂S₃.     

Physical properties of Mo6−xRuxTe8 and Mo6Te8−xSx

A series of the Chevrel phases, Mo_6−xRu_xTe₈ and Mo₆Te_8−xS_x (x=0, 1, 2), has been prepared and the various physical properties, such as the elastic modulus, Debye temperature, and electrical resistivity, have been evaluated. The relationships between several properties of the compounds have also been studied. Young’s modulus and Debye temperature of Mo_6−xRu_xTe₈ and Mo₆Te_8−xS_x increase with increasing x value. The relationship between the Vickers hardness and Young’s modulus shows ceramic characteristics for Mo_6−xRu_xTe₈, while they show glass-like characteristics for Mo₆Te_8−xS_x. The electrical resistivities of Mo_6−xRu_xTe₈ and Mo₆Te_8−xS_x increase with increasing x value.     

Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diode

Au/3C-SiC/p-Si/Al Schottky barrier diode was prepared using atmospheric pressure chemical vapor deposition technique. The device parameters such as barrier height, ideality factor, and series resistance were calculated using current-voltage characteristics, and were found to be 0.44 eV, 1.55, and 1.02 × 10⁴ Ω, respectively. The photocapacitive properties of the diode were studied under various illumination intensities. The transient photocapacitance measurements indicate that the capacitance of the Au/3C-SiC/p-Si/Al Schottky diode is very sensitive to illumination. The photocapacitance of the diode increases with increase in illumination intensity. The increase in photocapacitance with increase in illumination intensity suggests that these devices could be utilized as a photocapacitive sensor for optical sensors.     

Cr/CrN/CrNC/CrC/Cr-DLC梯度膜层的研究

采用中频磁控溅射结合离子源技术沉积Cr／CrN／CrNC／CrC／Cr-DLC膜层。利用扫描电镜（SEM）、电子能谱（EDS）、Raman光谱和俄歇深层剥层分别对膜层微观形貌、成分组成、键结构及梯度成分深层分布进行分析；采用努氏显微硬度计、摩擦磨损试验机、划痕仪及洛氏硬度计测评膜层机械性能。结果表明：采用中频磁控溅射可沉积出大面积Cr／CrN／CrNC／CrC／Cr-DLC梯度膜层；Cr溅射功率对C键结构影响不大，但表层DLC中Cr的含量和膜层厚度随中频功率增大而增大；随DLC中掺Cr量增多，膜层硬度及摩擦因数略有上升；采用梯度过渡层及掺入金属Cr提高了膜层附着力，但过高的中频功率使沉积离子能量偏高，膜层压应力增加反而降低了膜层附着性能。     

镧对Cu/Ti3SiC2/C/MWCNTs/Graphene/La纳米复合材料摩擦学性能的影响

本研究采用真空热压及热等静压方法制备Cu/Ti3SiC2/C/MWCNTs/Graphene/La纳米复合材料,采用摩擦磨损试验机研究对磨材料为GCr15时,镧含量对Cu/Ti3SiC2/C/MWCNTs/Graphene/La纳米复合材料的摩擦学性能的影响。研究了镧含量、正应力及旋转速度对纳米复合材料摩擦学行为的影响并揭示其相互作用机理,采用正交试验分析、方差分析及极差分析法来分析镧含量、正应力及旋转速度的相互作用。采用扫描电镜和能谱仪观察并分析磨损表面及磨削的形态及成分组分。研究结果表明镧对纳米复合材料的摩擦磨损性能起到首要作用,当镧的质量分数为0.05%时,复合材料的磨损机理为磨粒磨损、剥层磨损和氧化磨损,而当镧的质量分数为0.1%和0.3%时,复合材料的磨损机理为粘着磨损和氧化磨损。