欧盟G/TBT/N/EU/75通报分析

日前,欧盟发布G/TBT/N/EU/75通报,通报了计算机和计算机服务器的ErP指令实施条例草案,规定了计算机和计算机服务器产品的最低能源效率和信息要求,拟批准日期是2013年5月。该实施条例是ErP框架指令(2009/125/EC)下关于计算机产品的具体生态设计要求,该条例要求一旦正式生效,不符合要求的产品将不允许在欧盟市场销售。     

GaxIn1 ? xBiyAszSb1 ? y ? z/InSb and InBiyAszSb1 ? y ? z/InSb heterostructures grown in a temperature gradient

Heterophase equilibria in the Ga _x In_{1 − x} Bi _y As _z Sb_{1 − y − z} -InSb and InBi _y As _z Sb_{1 − y − z} -InSb systems have been analyzed within the simple solution approximation. Ga _x In_{1 − x} Bi _y As _z Sb_{1 − y − z} /InSb and InBi _y As _z Sb_{1 − y − z} /InSb heterostructures have been grown in a temperature gradient, and their composition and structural perfection have been assessed.     

On the pseudo-binary systems RexM1−xO2 (M=V,Mo, W)

Phase analysis studies on the $\text{Re}{}_{\mathrm{<mtext>x</mtext>}}\text{M}{}_{\mathrm{<mtext>1?</mtext><mtext>x</mtext>}}\text{O}{}_2$ systems ($\text{M}\text{=}\text{V, Mo, W}$) performed by means of X-ray powder photographs of samples prepared 1000K – 1225K have established the existence of the following phases:

$\text{ReO}{}_2\text{?}\text{VO}{}_2\text{:}\text{REo}{}_2\text{(orh) for 1>}{}_{\mathrm{<mtext>x</mtext>}}\text{>0.94 and}\text{VO}{}_2\text{(mon and tetr) for 0<}{}_{\mathrm{<mtext>x</mtext>}}\text{<0.5}$

$\text{ReO}{}_2\text{?}\text{MoO}{}_2\text{:}\text{ReO}{}_2\text{(orh) for 1>}{}_{\mathrm{<mtext>x</mtext>}}\text{>0.70. No. homogenity range of}\text{MoO}{}_2\text{.}$

$\text{ReO}{}_2\text{?}\text{WO}{}_2\text{: No mutual solubility nor anyintermediary phases}$

Metal-metal distances in the orthorhombic rhenium dioxide phases, derived from powder photographs, show slight changes with the $\text{x}$ value.     

Li0.5La0.5TiO3包覆LiNil/3Co1/3Mnl/3O2材料的研究

以Li0.5La0.5TiO3为包覆物,制备了固体电解质包覆的LiNil/3Co1/3Mnl/3O2正极材料。采用XRD、SEM对材料进行了表征:XRD显示未包覆的材料具有α-NaFeO2层状结构,粒径在200～300nm之间,包覆后材料粒径略有增大,包覆层具有ABO3型固体电解质结构。包覆层的致密程度及材料的循环稳定性与热处理温度有关。包覆后400℃热处理得到的材料首次放电比容量为185mAh/g,较未包覆材料容量有所提高,50次循环后其容量仍能达到156.5mAh/g,表明包覆物Li0.5La0.5TiO3对LiNil/3Co1/3Mnl/3O2具有保护作用。     

浅析GSM/TD-SCDMA/WLAN/TD-LTE异构网

未来移动通信的发展或是演进应该是多种无线接入技术的共存,相互补充、相互融合,协同服务。2010年7月初,中国移动明确了对GSM/TD-SCDMA/WLAN/TD-LTE四网建设的发展策略。本文简要介绍一下四网的现状、定位、发展策略及业务融合等问题。     

Magnetization Processes of (La0.7Pb0.3MnO3)1?x(SiO2)x Composites

The ceramic composites, (La_0.7Pb_0.3MnO₃)_1−x (SiO₂) _x , with diluted magnetic properties are prepared using solid-sate sintering route. Magnetization processes of (La_0.7Pb_0.3MnO₃)_1−x (SiO₂) _x composites are explored in this study. Ferromagnetism is gradually attenuated due to the magnetic dilution induced by the increase of SiO₂ content. Clearly, irreversible behavior is observed in the zero-field cooling and the field cooling (ZFC–FC) curves at a low field of 100 Oe. Saturation magnetization decreases as x increases while ferromagnetic transition temperature remains around 346 K for all composites. All the composites exhibit ferromagnetic hysteresis behavior which can be modeled by the law of the approach to saturation in the form M=M _S(1−a/H). The term a/H expresses the deviation of magnetization from saturation. The smaller factor a for La_0.7Pb_0.3MnO₃-rich samples results in sharper square curve which should be associated with the long-range spin order of ferromagnetic coupling.     

印度G/TBT/N/IND/44号TBT通报分析

2012年底,印度电子与信息技术部向WTO通报了关于《电子与信息技术商品（强制注册要求）法令2012》的G/TBT/N/IND/44号通报。此次印度通报主要是针对音视频产品、信息技术设备、微波炉、电子时钟等15种电子电器产品提出了强制性注册要求,通报法规一旦实施,将对我国相关电子电器产品出口印度产生较大影响。     

PP/PP-g-MAH/Talc/EP复合材料的性能

通过熔融共混制备聚丙烯(PP)/马来酸酐接枝聚丙烯(PP-g-MAH)/滑石粉(Talc)/环氧树脂(EP)复合材料,研究了E-51/504/554(55.6/42.4/2,E1)、E-51/EDA/554(92.2/7.8/0.01,E2)、E-20/2E4MZ(100/4,E3)三种EP体系及其含量对复合材料力学性能的影响,结果表明,E-1对复合材料的弯曲模量改善最显著,当加入4%的E1时,复合材料的弯曲模量达到最大值,提高了29.1%。傅里叶红外光谱(FT-IR)分析表明,EP与PP-g-MAH发生了酯化反应。观察复合材料的微观结构,发现EP阻止Talc的凝聚,加强了两相界面作用力。     

Ag/Bi2Sr2CaCu2Ox复合材料摩擦学特性

釆用固态反应法合成超导体Bi₂Sr₂CaCu₂O_x(Bi2212),使用摩擦实验机从液氮温度至室温对其摩擦学特性进行研究。研究表明：室温Bi2212与不锈钢盘对摩时摩擦系数约为0.35,当温度降至超导转变温度以下(液氮温度),摩擦系数大幅度降低至0.11,非常稳定。为改善Bi2212常温摩擦性能,添加Ag制备出Ag/Bi2212超导复合材料,XRD、SEM和EDS分析表明,Ag未进入Bi2212晶格,保证了Bi2212的超导电性,Ag的添加提高了复合材料密度和韧性,在正常载荷和滑行速度下Ag质量分数为10 %时摩擦系数为0.2,15%Ag/Bi2212磨损率最低,为9. 5×10-5 mm3 (N·m)-1。分布基体中的Ag能有效抑制裂纹萌生和扩展并在摩擦作用下向表面转移,在摩擦表面形成一层Ag转移膜,其低剪切强度起到很好的润滑作用,同时将摩擦产生的热量及时传导出去,使复合材料表现出良好的减摩耐磨性能。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.