水下激光切割硅片的工艺研究

为了解决气体辅助激光切割硅片中由于热效应的影响而造成无法达到切割目的的问题,使用水作为辅助介质进行了对硅的切割实验.分析了水下激光切割过程中激光参数和水的因素对切割质量的影响,提出了消除水波影响的方案.研究结果表明,采用水作为切割的辅助介质,能够利用水的降温、隔离和除屑作用来解决激光热效应带来的负面影响,得到良好的切割效果.     

低温阳极键合工艺研究

对低温阳极键合特性进行了研究.通过对硅片进行亲水、疏水和表面未处理3 种不同处理方式研究其对键合的影响,键合前将硅片浸入去离子水（DIW）中不同时间,研究硅表面H基和氧化硅分子数量对键合的影响.结果表明经亲水处理的硅片在水中浸泡1 h 的键合效果最佳.并设计了不同烘烤时间下的阳极键合实验,表明在100 °C 下烘烤30 min 可以有效减少气泡的数量和尺寸.由不同工艺条件下得到的键合形貌可知,通过控制硅片表面微观状态可以达到减小或消除键合气泡的目的.     

纳秒脉冲激光处理后硅电池光电转换效率研究

为了研究纳秒激光于硅晶片改性的可能性,对飞秒及皮秒激光在SF6气体中与硅表面作用形成锥形微观结构及其作用过程进行了分析。通过在SF6气体氛围中采用6ns激光脉冲辐照硅片表面的方法,以获得硅片表面峰状结构,并对此种作用下微观结构形成过程及结果进行了分析。将激光处理后的硅片与未经激光处理的硅片同时放入到硅电池片生产线的适当工序中制成硅电池片,通过对比测试两种硅电池的光电转换效率,从硅表面状况等因素对实验结果进行了初步分析。结果表明,激光处理后的硅片制成硅电池片的光电转换效率与未经激光处理的相比有一定程度的提高,可达15%～25%。     

激光切割碳纤维复合材料的实验研究

为了获得激光切割参量对碳纤维复合材料的影响规律,利用额定功率为500W的毫秒脉冲Nd:YAG激光器,分别进行了在空气中和水下切割碳纤维复合材料(CFRP)的实验研究。采用单因素实验法,考察了脉冲能量、频率、切割速度与气体压力等激光参量对切割质量的影响,获得了激光参量对切割CFRP材料切口的切缝宽度、正面纤维拔出长度、背面纤维拔出长度与锥角的影响规律,并对激光切割机理进行了分析研究。结果表明,水下切割能有效地减小激光切割产生的热影响区。这为继续开展激光水下切割CFRP的研究提供了参考。     

Nd:YAG连续激光诱导下硅中钛过饱和掺杂研究

为了在硅中掺入过饱和的过渡金属杂质,采用自行设计的线形大功率Nd:YAG激光辐照表面溅射钛的硅片,对辐照后样品进行了俄歇电子能谱测试,利用2维热力学模型,对连续激光扫描的过程进行了热力学模拟。结果表明,硅中的钛掺杂浓度远高于钛在硅中的固溶度,钛的最高浓度在表面下方一定距离处;硅片中的最高温度并不在硅的表面,温度分布导致了钛的分布不在表面;模拟结果与实验结果吻合得较好。线形连续激光能够通过对材料表面扫描辐照的方式进行加工,实现过饱和掺杂。     

水下激光切割质量影响因素的研究

介绍了在水下进行激光切割时影响切割质量的几种因素.激光切割应用得已经比较普遍,但是用于水下作业的情况还是比较少.水下激光切割时,不同的激光波长和不同的水层深度都会影响到水对激光能量的吸收,从而改变加工效果;水体流动可以加强水的冷却效果和冲刷效果,有助于提高切割质量;由于水对激光的折射作用,会使得焦点位置下移,影响切割质量.     

基于BP神经网络的光纤激光切割切口粗糙度预测

为了研究工艺参量对光纤激光切割切口质量的影响,进行了切割T4003不锈钢试验,分析了工艺参量与切口质量之间的关系。采用基于误差反向传播算法的人工神经网络,建立了激光功率、切割速率、辅助气体压力等工艺参量与切口粗糙度之间的预测模型。对切割试验采集的训练样本进行了网络训练,并利用测试样本对训练模型进行验证。结果表明,随着激光功率增加,切口粗糙度增大;随着切割速率和辅助气体压力增加,切口粗糙度减小。神经网络预测模型精度较高,网络训练效果良好,预测值与试验样本值间的最大相对误差为2.4%。训练后检验精度较高,检验样本最大相对误差仅为6.23%。该模型可有效预测激光切割切口表面粗糙度,同时为合理选择及优化工艺参量,提高激光切割质量提供试验依据。     

光纤激光切割中厚铝合金板工艺特性研究

为了探究中厚板铝合金光纤激光切割工艺特性,开展了光纤激光切割8mm厚AA2219铝合金工艺实验,系统研究了激光功率、切割速度、离焦量和辅助气压等工艺参数对切缝质量的影响。以根部挂渣高度和切缝下部分倾斜条纹区域所占板厚比例来表征切缝质量。实验结果表明,激光功率和辅助气压是影响切缝质量的最主要的工艺参数,当激光功率增大至5.4kW、辅助气压取值范围增大至1100～1500kPa时,切缝挂渣量最少。最后,为了进一步提高中厚度铝合金激光切割质量,根据空气动力学原理,利用流体力学模拟设计并制作了简易Laval喷嘴,采用该喷嘴进行实验发现,切缝表面倾斜条纹区域范围从0.5降至0.14,而挂渣高度变化较小。     

硅抛光片表面疏水改性工艺研究

采用稀释HF溶液对亲水性的硅抛光片表面进行了疏水改性,并对HF腐蚀硅片表面氧化层、钝化表面的机理进行了分析。研究了HF溶液浓度和反应时间对硅抛光片表面颗粒度和接触角的影响,通过对比分析,得到了HF溶液疏水改性的最佳浓度和最佳反应时间,HF体积比为3%,反应时间为120 s时,HF能够与样品表面充分反应,并且二次吸附颗粒数量最少。采用兆声溢流方式可以大大减少样品表面吸附颗粒数量,而不影响疏水性能。     

预处理法铜-钢层合板激光切割试验研究

利用光纤激光器切割1 mm厚铜-钢-铜层合板时,会出现反射率高、氧气辅助切割表面氧化严重及板材切割后切缝宽等问题。提出了激光预处理法,通过控制能量输入和氧化反应,材料表面产生了浅层熔化,从而预处理区域的元素构成、形貌及物化性质得到改变。最终获得了缝宽小于光斑直径的狭缝光栅试件。利用IPP软件对预处理后浅层熔化区域内的氧化物分布进行了测定,并计算了氧化物面积占浅层熔化区面积的比例。利用预处理法,获得了满足质量要求的狭缝光栅件,切割后的热影响区大大减小且背面无挂渣,切割前后覆层铜材料的性质得到保护,光纤激光切割铜-钢层合板的质量得到保证。     

Advanced Dicing Technology for Semiconductor Wafer—Stealth Dicing

ldquoStealth dicing (SD)rdquo was developed to solve inherent problems of a dicing process such as debris contaminants and unnecessary thermal damages on a work wafer. A completely dry process is another big advantage over other dicing methods. In SD, the laser beam power of transmissible wavelength is absorbed only around focal point in the wafer by utilizing the temperature dependence of the absorption coefficient of the wafer. The absorbed power forms a modified layer in the wafer, which functions as the origin of separation in the separation process. In this paper, we applied this method for an ultra-thin wafer. The reliability of devices that is diced by SD was confirmed.     

晶圆划切工艺与优化

在研究晶圆划片机划切工艺的基础上,分析了划切的质量缺陷和划切质量评估矩阵,阐述了影响划切质量的诸多因素。介绍了划片刀、承载薄膜、划切模式、划切冷却水的添加剂和划切参数的选择对划切质量的影响,通过对以上5个方面的优化来达到优化工艺的目的,同时还提出了将砂轮划片和微水导激光划片相结合的新划切工艺。     

A hybrid wafer-dicing process for GaAs MMIC production

A dicing process for GaAs MMIC (monolithic microwave integrated circuit) wafers using spin-on wax for wafer mounting and a hybrid process of wet chemical etching/mechanical sawing for chip dicing is described. This process minimizes ragged chip edges and reduces generation of microcracks in addition to the elimination of the plated gold burrs on the backside of the diced MMIC chips. This process gives a uniformity of -3 μm across a 2-in wafer following the completion of the whole backside process. This GaAs chip dicing technique is amenable to production because it exhibits both a very high chip yield (>90%) and nearly flawless edges     

Effect of laminated wafer toward dicing process and alternative double pass sawing method to reduce chipping

Thin wafers of 100-/spl mu/m thickness laminated with die-attach film (DAF) was diced using a standard sawing process and revealed a low chipping crack resistance. Wafers laminated with conductive DAF shows greater chipping compared to nonconductive DAF and bare silicon wafer. It was found through scanning electron microscopy (SEM) micrographs, energy dispersive X-ray (EDX) analysis, and atomic force microscopy (AFM) that silver fillers in the conductive DAF was the cause of excessive blade loading which resulted in bad chipping quality. To reduce chipping/cracking induced by sawing, an alternative double-pass sawing method was developed and is explained in the paper. The methodology of this study discusses a double-pass method, where the first pass dice through the wafer and varied the percentage of DAF thickness cut. Best results were achieved when dicing through the wafer and 0% of DAF, followed by a full separation in the second pass. Approximately 80% of chipping reduction compared to conventional single pass.     

Method of analyzing silicon groove damage using QSS‐PC,PL imaging,silicon etch rate,and visual microscopy for solar cell fabrication

This work uses a variety of tools to investigate damage caused by laser and dicing saw grooving in silicon. The tools comprise quasi steady state photoconductance decay, photoluminescence imaging, measurement of silicon etch rate in anisotropic etch solution, and visual microscopy. Shallow grooves were formed using a 532 nm Q‐switched Nd:YLF frequency doubled solid state laser and a high speed spindle dicing saw. Combined analysis of the characterization tools enabled determination of the damage radius of the grooves within the bulk of the wafer, the radius of damage in the dielectric layer laterally along the surface of the wafer, as well as the groove etching requirements to fully recover the minority carrier lifetime in the vicinity of the groove. Copyright © 2011 John Wiley & Sons, Ltd.     

Evaluation of crystallinity of GaN epitaxial layer after wafer dicing

The crystallinity of GaN epitaxial layers on sapphire substrates following laser dicing was evaluated by Raman spectroscopy. Dicing was carried out using either full laser ablation or laser scribing followed by breaking. The results indicated that in a region within about 40 μm from the edges of the diced chips, the Raman peaks were shifted to lower wavenumber than near the chip center. The shifted peaks were at positions intermediate between those for the GaN epitaxial layer before dicing and those for a bulk GaN crystal. These results indicate that stress relaxation occurred near the edges of the diced chips.     

A novel mechanical diced trench structure for warpage reduction in wafer level packaging process

The wafer warpage problem, mainly originated from coefficient of thermal expansion mismatch between the materials, becomes serious in wafer level packaging as large diameter wafer is adopted currently. The warpage poses threats to wafer handling, process qualities, and can also lead to serious reliability problems. In this paper, a novel mechanical diced trench structure was proposed to reduce the final wafer warpage. Deep patterned trenches with a depth about 100 μm were fabricated in the Si substrate by mechanical dicing method. Both experiment and simulation approaches were used to investigate the effect of the trenches on the wafer warpage and the influence of the geometry of the trenches was also studied. The results indicate that, by forming deep trenches, the stress on the individual die is decoupled and the total wafer warpage could be reduced. The final wafer warpage is closely related to the trench depth and die width. Trenched sample with a depth of 100 μm can decrease the wafer warpage by 51.4%.     

圆片等离子划片工艺及其优势

等离子划片是近年来兴起的一项新型圆片划片工艺。与传统的刀片划片、激光划片等工艺不同,该工艺技术可以同步完成一张圆片上所有芯片的划片,生产效率明显提升,是对现有划片工艺的一个颠覆。介绍了圆片划片工艺的工作原理、技术特点及其优势,并对其在解决圆片划片应用中的典型问题和不足之处进行了讨论。