MPC850嵌入式通信开发平台的硬件设计

介绍了基于PowerPC内核的嵌入式通信控制器芯片MPC850，及一种开发MPC850通信功能的硬件平台设计。     

基于MPC850嵌入式通信平台的I2C接口设计

介绍了I^2C总线的数据形式及数据传输格式，以基于MPC850的嵌入式通信平台为例说明了I^2C总线的应用及其软、硬件实现方法。     

基于MPC850的四路MPEG-4视频监控系统的设计实现

本方介绍了基于PowerPC内核的嵌入式通信控制器芯片MPC850和MPEG-4数字视频压缩芯片IME6400，并利用这些芯片设计并实现了一种新型的MPEG-4数字视频监控系统。     

数字通信遥视系统数据实时传输技术研究

在介绍数字通信技术的基础上,讨论了基于数据实时传输技术的数字通信遥视系统（Digital Remote System）传输模块的具体实现。分析了远程监视系统的现状,并从整体嵌入式系统设计的方法着手,论述了嵌入式系统设计的软硬件设计流程和数字遥视系统的传输模块的软硬件详细设计,并提出以Motorola的微通信控制器MPC850为核心的硬件设计,以及以RTOS NucleusPlus为基础的实时应用软件设计的方案。MPC850强大的通信接口能力和NucleusPlus的业务实时处理能力为传输模块的实现提供了保障。     

外围控制设备

0306249低功耗 MSP430单片机在3V 与5V 混合系统中的逻辑接口技术[刊]/王少卿//电子技术应用.—2002,28(10).—16～19(D)低功耗 MSP430单片机与传统的 LSTTL、HC-MOS 和 CMOS 接口技术,特别阐述了3V 器件具有5V 容限的特点。介绍两种电平移位器。参20305250基于 MPC850嵌入式通信平台的 I~2C 接口设计[刊]/蒋伟宏//电子工程师.—2002,28(10).—20～22(C)介绍了12C 总线的数据形式及数据传输格式,以基于 MPC850的嵌入式通信平台为例说明了I~2C 总线的应用及其软、硬件实现方法。参3     

通信控制器MPC850在网络设备硬件平台中的设计与应用

本文主要探讨了利用Motorola公司的通信控制器 MPC850芯片实现诸如路由器、调制解调器等网络设备硬件平台的设计。同时根据该芯片的内部结构和功能特点,重点论述了上电复位、内存管理和软件运行环境建立等方面的设计。     

融合双处理器的高性能微处理器MPC8260

MPC8260（PowerQUICCⅡ）是目前被众多国内外通信设备和网络设备制造商所瞩目的一种高性能集成通信微处理器。本文介绍了MPC8260的主要组成部分及特点，并以多信道控制器（MCC）对E1速率数据的处理为例简要介绍了MPC8260在通信中的应用。     

基于MPC850上的嵌入式Linux实现

详细介绍了将Linux-2，4，4版本的内核移植到基于MPC850的嵌入式开发板上的具体实现和关键技术。     

嵌入式微处理器MPC855T在局域网分析仪中的硬件实现

分析Motorola MPC855T嵌入式微处理器的性能及特征，重点介绍MPC855T在局域网测试中的应用，突出了MPC855T嵌入式微处理器的通信处理能力。     

飞思卡尔推出崭新的集成通信处理器MPC8360E及QuiccEngine技术

飞思卡尔公司在4月14日召开了媒体见面会，其半导体部亚太区网络及运算系统部市场总监何耀祺先生介绍了飞思卡尔崭新的集成通信处理器MPC8360E及Quicc Engine技术的应用。集成了QUICC Engine^TM技术的MPC8360E PowerQUICC^TM Ⅱ Pro处理器是一种先进的、后向兼容的通信处理器，专为降低分组网络和无线设备的开发成本而设计。该处理器系列基于e300 Power PC SoC平台，目前有MPC8360E和MPC8358E两颗产品，     

A 20-W stereo class-D audio output power stage in 0.6-/spl mu/m BCDMOS technology

This paper presents a highly power efficient 2/spl times/20-W class-D audio output power stage implemented in 0.6-/spl mu/m BCDMOS technology. The presented power stage is capable of driving 2/spl times/8-/spl Omega/ loads from a 20-V power supply at a power efficiency approaching 90%. Circuit details of thermal detection, over-current protection, and startup speaker click/pop are also presented. The performance of open-loop Class-D output stages are limited by the distortion mechanisms present within the power stage itself. A third-order PWM modulator was prototyped and used to dramatically improve the performance of the Class-D output stage by using feedback. The results of this work are also presented.     

一种低温漂的CMOS带隙基准电压源的研究

为了满足深亚微米级集成电路对低温漂、低功耗电源电压的需求,提出了一种在0.25μm N阱CMOS工艺下,采用一阶温度补偿技术设计的CMOS带隙基准电压源电路。电路核心部分由双极晶体管构成,实现了VBE和VT的线性叠加,获得近似零温度系数的输出电压。T-SPICE软件仿真表明,在3.3 V电源电压下,当温度在-20~70℃之间变化时,该电路输出电压的温度系数为10×10-6/℃,输出电压的标准偏差为1 mV,室温时电路的功耗为5.283 1 mW,属于低温漂、低功耗的基准电压源。     

基于56F803型DSP的大功率超声波电源的研究

针对大功率超声波电源高精度、高功率输出的特点,对超声波电源控制策略进行了改进.提出一种基于56F803型DSP的频率跟踪与功率调节相结合的周期分段移相控制策略,研究了基于此控制方法的超声波电源.     

Experimental results on bistatic rain scattering at 14.3 GHz

A bistatic rain scatter experiment at 14.3 GHz was conducted on two scattering paths. The experiment was made for more than two years on the Kashima-Inubo path and for more than one year on the Kashima-Hiraiso path. Statistical analyses of the data were made to obtain, e.g., cumulative distributions of the received power, worst month statistics of the received power, and cumulative duration time distributions of the received power. It is found that the effect of rain attenuation reduces statistical variations of the received power. A brief discussion on the prediction of the received power is presented. Also presented are the experimental results showing that the effect of antenna polarization on the received power is well described by the Mie theory.     

一种超低功耗放大器的设计

设计了一种集成于电源管理芯片内部的超低功耗运算放大器电路。采用HSPICE，对电路进行模拟仿真，并与传统放大器电路进行了比较。结果表明，该电路具有超低静态电流和超低功耗的特点。     

基于GPRS的远程抄表系统研究与实现

针对电力系统对电能的自动化管理,研制开发了远程抄表系统,该系统实现了对电能表自动连续测量和实时控制。对系统的低压电力线传输的瓶颈问题提出了有效的解决方法。对集中器和GPRS相结合的模块进行了分析,对上位机设计方法进行了介绍,完成了系统设计。     

Indium gallium arsenide microwave power transistors

Depletion-mode InGaAs microwave power MISFETs with 1-μm gate lengths and up to 1-mm gate widths have been fabricated using an ion-implanted process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The DC current-voltage (I -V) characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, the first report of RF output stability of InGaAs MISFETs over 24 h period is also presented. An output power stability within 1.2% over 24 h of continuous operation was achieved. In addition, a drain current drift of 4% over 10⁴ s was obtained     

高功率1018 nm 连续掺镱光纤激光器

成功搭建了高功率1018 nm连续掺镱光纤激光器,通过合理地择增益光纤长度,有效地抑制了ASE。实验获得了300 W最高输出功率,斜率效率为81%。     

一种新颖的功率MOSFET SPICE宏模型

提出了一种新颖的功率MOSFET宏模型结构,详细介绍了宏模型建立的整个流程;并将此模型的仿真结果与实验数据进行比较,验证了模型的精度。此模型考虑了功率MOSFET必要的二阶效应,并采用行为级模型来处理JFET电阻。     

The ZVS-PWM commutation cell applied to the DC-AC converter

This paper presents the analysis of a DC-AC power converter using a zero-voltage-switching (ZVS) commutation cell. First, the authors show the cell applied to the buck power converter. The stages of operation are presented along with the main current and voltage equations. Next, they adapt the power converter to the regenerative-operation mode. Hence, the full-bridge power converter at low-frequency operation is connected in the DC-DC output stage (at high frequency). The main switches commute at zero voltage. The power converter operated at constant frequency with pulse-width modulation (PWM), and neither overvoltage nor additional current stress was observed by digital simulation. A design example and experimental results obtained by prototype, rated at 275 V and 1 kW, are also presented