（0.82-x）Bi0.5Na0.82Ti O3-0.18Bi0.5K0.18TiO3-xBiFeO3（x=0.01-0.07）无铅压电陶瓷的制备及其电学性能的研究

采用传统的固相烧结法于1120℃烧结2 h得到（0.82-x）Bi0.5Na0.82Ti O3-0.18Bi0.5K0.18TiO3-xBiFeO3（x=0.01-0.07）无铅压电陶瓷,并对该体系陶瓷的微观结构和电学性能进行了研究。结果表明,BiFeO3的引入量x为0.01-0.07时,样品均为具有MPB准同型相界（三方相和四方相共存）的钙钛矿结构。BiFeO3的引入使陶瓷的晶粒度略有增加;当x=0.03时,样品达到最大致密度。为97.7%;陶瓷的压电常数d33随BiFeO3的引入而降低。陶瓷的相对介电常数εr和居里温度随BiFeO3的引入而明显增大,在x=0.03时达到最大值。     

铌掺杂Bi3.15Nd0.85Ti3O12陶瓷材料铁电性能

采用高温固相法制备了铌掺杂Bi3.15Nd0.85Ti3O12铁电材料.利用X射线衍射仪、拉曼光谱仪分析样品物相结构,阻抗分析仪和铁电性能测量仪测试电性能.发现制备的陶瓷材料均为单一的层状钙钛矿结构,反映TiO6八面体内部振动情况的850cm-1处拉曼峰随着Nb掺杂量的增加明显上移,表明:TiO6参与取代过程,Ti4+被具有较小离子半径的Nb5+取代.Nb的引入使样品的介电损耗明显降低,居里温度呈下降趋势.随着Nb掺杂量的增加,材料的剩余极化强度先增大后减小,当x=0.03时2Pr达到极大值19.3μC/cm2,矫顽场为57.5 kV/cm.     

La2O3掺杂对(Bi1/2Na1/2)0.94Ba0.06TiO3陶瓷性能与微结构的影响

采用传统陶瓷工艺方法制备了La2O3掺杂(Bi1/2Na1/2)0.94Ba0.06TiOa(BNBT6)无铅压电陶瓷,系统地研究了La2O3掺杂对该体系陶瓷介电、压电性能与微观结构的影响.结果表明:该体系具有很高的压电常数,是单一的钙钛矿结构,La2O3的添加对晶粒生长具有一定的抑制作用,线收缩率和相对密度增大.室温介电常数随着La2O3掺杂量的增加而增大.与不添加La2O3的陶瓷样品相比,添加少量La2O3可以使体系的弛豫特征更为明显.当掺杂量为0.1 wt%时,该体系陶瓷具有较好的综合性能:d3a=160 pC/N,kp=0.322.当掺杂量达到0.5 wt%以后,陶瓷的压电性能严重降低.     

Ba1-xBix(Ti0.9Zr0.1)O3陶瓷的介电弛豫特征

采用固相反应法制备了Ba1-xBix(Ti0.9Zr0.1)O3(x=0.01,0.02,0.03,0.04)陶瓷,X射线衍射分析表明所有样品均是四方晶体结构,3%mol的Bi3+能够完全溶入钙钛矿晶格中.不同频率下Ba1-xBix(Ti0.9Zr0.1)O3陶瓷的介电温谱显示所有样品均表现出弥散相变的特征,在x≥0....     

铈掺杂钛酸铋陶瓷铁电与介电性质研究

采用固相烧结工艺制备了铈(Ce)元素掺杂钛酸铋(Bi4Ti3O12)材料构成Bi4Ti3-xCexO12(x=0,0.015,0.03,0.06)铁电陶瓷材料并研究其介电以及铁电性质.晶格常数随着掺杂浓度的变化,意味着Ce4+/Ce3+对A位和B位的掺杂,明显提高了钛酸铋铁电陶瓷剩余极化强度,并且Bi4Ti3-xCexO12铁电陶瓷的介电损耗随温度的变化比一般的B位等电价离子取代的情形更加平缓.     

Bi2V0.9Cu0.1O5.35-δ陶瓷的烧结导电性及相变研究

采用EDTA-柠檬酸盐法制备出具有单一Aurivillius结构的Bi2V0.9Cu0.1O5.35-δ陶瓷。用扫描电镜、交流阻抗谱法、差热分析等方法研究了陶瓷样品的显微结构、氧离子导电性能及相变行为。结果表明:陶瓷样品的显微结构对Bi2V0.9Cu0.1O5.35-δ的氧离子导电性能有明显的影响。晶粒细小均匀的显微结构有效降低了Bi2V0.9Cu0.1O5.35-δ陶瓷在升降温过程中氧离子电导率的热滞程度。Bi2Cu0.1V0.9O5.35-δ陶瓷氧离子电导率Arrhenius关系曲线中,高温段和低温段导电活化能的差异是有序-无序相变引起的。     

稀土元素钇和钬掺杂对铁酸铋磁性能的影响

铁酸铋是一种典型的单相多铁性材料,宏观上磁性很弱,为了改善其磁性能,用稀土元素钇和钬对其A位元素进行替代.采用水热法制备掺钇和掺钬的铁酸铋系列粉末样品,然后将这些粉末样品采用常规的固相反应法制备出陶瓷样品.以浓度12.5mol/L的氢氧化钾为矿化剂,反应温度为240℃,反应时间为24h时,得到了掺钇和掺钬的铁酸铋样品.X射线衍射结果显示,当掺杂量小于或等于0.05时,样品结构为纯相的三方铁酸铋结构,当掺杂量大于0.05时,出现了越来越多的杂相;通过振动样品磁强计测试样品的磁性能,发现所有样品都观察到了饱和的磁滞回线,说明掺钇和钬都能明显改善铁酸铋的磁性能;通过对比掺钇和掺钬所有样品的饱和磁化强度值,发现掺杂量相同时,掺钇样品的饱和磁化强度值都要比掺钬的大,而相同大小的钇离子没有磁性,钬离子有磁性,说明稀土离子本身的磁矩可能不是铁酸铋磁性增强的主要因素.     

Sr2Bi4-xLaxTi5O18铁电陶瓷性能的研究

采用固相烧结工艺制备了Sr2Bi4-xLaxTi5O18(x=0.00,0.10,0.25,0.50,0.75,1.00)陶瓷样品。用X射线衍射仪对其微结构进行了分析，并测量了其铁电、介电性能、。结果表明，随着La含量的增加，样品的剩余极化Pr和矫顽场Ec逐渐减小，这是由于La掺杂使得样品晶格畸变变小，从而导致剩余极化的降低。相变温度Tc随着La含量的增加而降低，这也与样品晶格畸变有关。     

Ba_（1-x）Bi_x（Ti_（0.9）Zr_（0.1））O_3陶瓷的介电弛豫特征

采用固相反应法制备了Ba1-xBix（Ti0.9Zr0.1）O3（x=0.01,0.02,0.03,0.04）陶瓷,X射线衍射分析表明所有样品均是四方晶体结构,3%mol的Bi3＋能够完全溶入钙钛矿晶格中。不同频率下Ba1-xBix（Ti0.9Zr0.1）O3陶瓷的介电温谱显示所有样品均表现出弥散相变的特征,在x≥0.02的三组样品又表现出弛豫铁电体的特征。通过纳米极性微区和畴壁探讨了弛豫现象产生的机理。     

摻杂Bi4Ti3O12铁电陶瓷的制备及其铁电性研究

为了提高Bi4Ti3O12材料的剩余极化强度,改善材料的铁电性,作者以Bi4Ti3O12为基础,采用固相法制备了Bi4Ti3O12铁电陶瓷,并通过摻入稀土离子Nb5 对其进行了改性,同时对试样的结构、形貌和铁电性能进行了测试.结果表明:Nb5 掺杂并不改变材料的相组成;当掺杂量为0.08 mol%时,材料的性能较好,晶粒大小均匀,平均晶粒尺寸为5 μm;适量的Nb5 掺杂能够显著提高材料的剩余极化强度,当掺杂量为0.08 mol%时,材料的剩余极化强度为14.2 μC/cm2,矫顽场为54 kV/cm.     

Bi4Ti3O12陶瓷及其A和B位掺杂的介电研究

测量了Bi4Ti3O12(BTO)陶瓷及其A和B位掺杂的系列材料介电损耗。在温度损耗谱上观察到一损耗峰，通过氧处理和内耗等相关实验手段，证实该峰（PI）是与氧空位有关的弛豫峰。同时观察该峰随不同掺杂类型的变化，分析了BTO陶瓷B位掺杂对铁电性的影响。     

K0.5Bi0.5TiO3:ZnO无铅铁电复合陶瓷的退极化行为

为了抑制K_(0.5)Bi_(0.5)TiO_3的退极化现象,提高铁电性能,以K_2CO_3、TiO_2、Bi_2O_3及ZnO为原料,通过二步固相法合成无铅铁电复合陶瓷K_(0.5)Bi_(0.5)TiO_3:ZnO(KBT:ZnO).通过X射线衍射、扫描电子显微镜、铁电和介电测试分析了复合陶瓷的微观结构和介电行为.结果表明:KBT中引入20%(物质的量百分数)的ZnO后,复合陶瓷中生成了第三相Zn2TiO_4,同时,KBT的极化能力及其铁电行为得到改善.阻抗测试表明复合铁电陶瓷内部只存在一种导电机制,即电子电导.特别是ZnO的引入抑制了KBT由正常铁电体向弛豫铁电体的相转变,对KBT的应用和研究有着重要的作用.     

Struchre and Electrical Properties of (Na0.5Bi0.5)0.94Ba0.06TiO3 Ceramic with 0.5 wt% of MnO

The structure and electrical properties of(Na0.5Bi0.5)0.94Ba0.06TiO3 ceramic doped with 0.5 wt% of MnO were investigated in comparison with those of(Na0.5Bi0.5)0.94Ba0.06TiO3 ceramic.It was ascertained that the MnO addition did not cause remarkable change in crystal structure and microstructure.The MnO addition mainly displayed a hard effect on the electrical properties,an increase of coercive field(Ec)and mechanical quality factor(Qm)together with a decrease of dielectric constant(?r)and piezoelectric constant(d33).An enhancement of electromechanical coupling factor(kp)with the MnO addition was obtained too.An essential relation between the piezoelectric properties and ferroelectric nature of the ceramics was detected.It was found that the piezoelectric properties of the ceramics highly depended on the corporative contribution of remanent polarization(Pr)and coercive field.     

Remarkable improvement of ferroelectric properties and leakage current in BiFeO<Subscript>3</Subscript> thin films by nd modification

Ferroelectric and leakage properties are important for ferroelectric applications. Pure and Nd-doped (x=0.05-0.20) BiFeO3 thin films were fabricated by sol-gel method on FTO substrates. The phase structure, surface morphology, leakage current, ferroelectric properties, and optical properties of BiFeO₃^- based thin films were investigated. The substitution of Nd³⁺ ions for the Bi3+ site converts the structure from rhombohedral to coexisting tetragonal and orthorhombic. Nd doping improves the crystallinity of BiFeO₃ thin films. The leakage current of Nd-doped BiFeO₃ decreases by two to three orders of magnitude compared with that of pure BiFeO₃. Among the samples, 15% Nd-doped BiFeO₃ exhibits the strongest ferroelectric polarization of 17.96 μC/cm². Furthermore, the absorption edges of Bi_1-xNd _x FeO₃ thin films show a slight red-shift after Nd doping.     

0．992K0．5Na0．5NbO3-0．008BiFeO3无铅压电陶瓷制备及压电性能研究

以水热法制备的0．992K0．5Na0．5NbO3（BF）粉体等为原料,采用常压烧结法在1065℃下烧结2h制备了0．992K0．5Na0．5NbO3-0．008BiFe03无铅压电陶瓷,并研究了BiFeO3掺杂对0．992K0．5Na0．5NbO3-0．008BiFeO3无铅压电陶瓷结构和压电的影响．研究结果表明：BiFeO3掺杂使K0.5Na0.5NbO3无铅压电陶瓷正交相减弱,晶粒尺寸由6／2m减小到1μm;压电性能有一定提高,压电常数（d33）、机电耦合系数（kp）分别达到120pC／N和37．8,居里温度Tc由444．4℃减少至420．6℃．     

Ab Initio Study of Doping Mechanisms in Ba TiO_3-BiYO_3

A density functional plane-wave pseudopotential method is used to study the doping mechanisms of impurity defects(Bi_(Ba),Y_(Ti)) in BaTi O_3-BiYO_3. Single Bi_(Ba) and Y_(Ti) impurities have little structure distortion. Bi forms ionic bond with nearby O atom in single Bi impurity, Y formed [YO_6] octahedral in single Y impurity. However, in the co-doped Bi_(Ba) and Y_(Ti) structure, Bi formed three valence bonds with nearby O atom, which causes the large structure distortion. The doped ion makes the mobile of Ti~(4+) difficult and loss local ferroelectricity, which will broaden the dielectric constant temperature curve and increase the temperature stability of BaTiO_3 ceramic matrix.