热处理温度对TiO2薄膜光催化及亲水性的影响

采用溶胶-凝胶法及浸渍提拉法在普通的载玻片上制得TiO2薄膜,通过对薄膜及相应粉体的XRD、IR谱及薄膜致密度的测量,分析了热处理温度对TiO2薄膜光催化及超亲水特性的影响.结果表明:薄膜经过不同温度的热处理,光催化活性不同,亲水性能也有显著的差别,经450℃热处理的薄膜光催化活性最高,而在450～550℃的热处理温度范围得到了接触角为0°的超亲水性薄膜;薄膜表面的超亲水性与薄膜中TiO2的晶型、羟基浓度及薄膜的孔隙度有关.     

环保型TiO2薄膜玻璃性能的研究

采用溶胶－凝胶法在玻璃表面制备了TiO2薄膜和掺杂铈或镧TiO2薄膜，利用高效液相色谱仪（HPLC）、紫外－可见分光光度计、扫描电镜（SEM）等测试手段，研究了不同气氛条件下热处理的TiO2薄膜对油酸光催化降解的影响，TiO2薄膜中掺杂稀土铈或稀土镧对油酸光催化降解的影响，薄膜内TiO2晶粒的分布及形态，薄膜表面化学稳定性等。结果表明空气气氛下处理的TiO2薄膜光催化效率最高。掺杂铈或镧有利于提高TiO2薄膜的光催化降解效率，涂层有利于提高玻璃的化学稳定性，但提高的程度不一。     

TiO2纳米颗粒的制备及光催化降解甲醛的研究

本工作系采用溶胶-凝胶法合成TiO2颗粒的平均粒径为20mm，电子衍射环图结果表明TiO2颗粒晶体结构为锐钛矿型，在光催化反应系统中对上述TiO2颗粒制备的薄膜进行了甲醛的光催化降解实验，考察了TiO2颗粒制备的薄膜的层数，溶胶体系pH值，活化温度及活化时间等条件对TiO2薄膜光催化降解甲醛性能的影响。实验结果表明，溶胶-凝胶法的制备工艺条件对TiO2薄膜的光催化不知性有着较大的影响，活化的温度和活化的时间影响最大，其次就是溶胶体系的pH值，当pH=2，活化温度为500℃，活化时间5h，制成的TiO2薄膜光催化降解甲醛的降解率可以达到60%以上。     

预涂SiO2的二氧化钛薄膜光催化活性与结构关系

载玻片上浸涂一层常温常压合成的SiO2溶胶后再浸涂TiO2溶胶制备预涂SiO2的TiO2薄膜光催化剂,结果发现浸涂一层SiO2会诱导金红石相TiO2生成,并使TiO2光催化活性提高71．75％,但预涂二层SiO2的TiO2薄膜仅有锐钛型且光催化活性较纯TiO2薄膜降低。这说明适量金红石型／锐钛型的混晶型TiO2具有更好的光催化活性。对TiO2微结构分析显示,TiO2薄膜点阵应变越大,薄膜光催化性能越好。X射线光电子能谱研究表明,预涂一层SiO2的Ti02薄膜Ti^3 含量较纯TiO2薄膜高,预涂二层SiO2的TiO2薄膜Ti^3 含量较纯TiO2薄膜低。扫描电镜分析说明,预涂SiO2的TiO2薄膜表面颗粒粒径较纯TiO2薄膜更小,薄膜颗粒粒径与光催化活性不是简单的一一对应关系。     

衬底对溶胶凝胶法制备TiO2薄膜性能的影响

以钛酸丁酯为前驱体,经浸渍拉膜法在不锈钢以及表面预镀一层非晶态SiO2薄膜的不锈钢表面镀TiO2薄膜.利用XRD、FE-SEM研究了薄膜晶体结构与表面形貌,同时研究了不同衬底上薄膜光催化活性和亲水性,并与以玻璃为衬底的作比较.结果表明,衬底对TiO2薄膜表面形貌及性能的影响很大.以不锈钢为衬底的TiO2薄膜性能光催化活性较弱,但在表面预镀一层非晶态SiO2后TiO2薄膜的光催化活性有所改善.     

热处理工艺对多孔TiO2薄膜光催化性能的影响

以十八胺为模板剂,采用溶胶-凝胶法在玻璃基体上制备了多孔TiO2薄膜,研究了热处理工艺对薄膜理化性质及光催化性能的影响。随煅烧温度和煅烧时间的增加,TiO2薄膜表面逐渐形成清晰的孔结构,晶粒尺寸增大。薄膜由锐钛矿型TiO2组成,Ti以Ti 4+的形式存在。制备的TiO2薄膜厚度在200nm左右,薄膜的UV-Vis透射率随煅烧温度的升高呈下降趋势,随煅烧时间的延长先下降而后又上升。多孔TiO2薄膜光催化降解甲基橙结果表明,随煅烧温度升高薄膜的光催化活性增加,在500℃煅烧2h制备的薄膜具有最佳的光催化活性。     

溶胶-凝胶法制备TiO2薄膜光催化特性实验研究

采用溶胶-凝胶实验方法,研究了TiO2薄膜厚度、退火温度及退火时间对薄膜晶相结构、表面形貌和光催化性能的影响。结果表明,TiO2薄膜光催化活性随着薄膜厚度的增加而增加,当薄膜厚度为3层时,光催化活性达到最大,层数超过3层时,薄膜的光催化活性随薄膜厚度的增加反而降低;当退火温度为550℃时,TiO2薄膜中出现金红石相,质量分数为25.4%,此时的光催化效率最高;随着退火时间的延长,TiO2晶粒尺寸逐渐变大,光催化活性逐渐减弱。     

具有可见光活性的TiO2薄膜的制备及光催化性能

运用磁控溅射技术在浸渍－提拉法制得的TiO2薄膜上溅射三氧化钨层得到光催化薄膜。采用SEM、XRD、AES、UV－vis漫反射光谱等方法表征催化剂薄膜的厚度、晶相结构、化学元素组成及光吸收性能。以甲基橙的光催化降解为反应模型，高压汞灯为光源，溅射有三氧化钨薄膜的光催化活性低于纯TiO2薄膜；滤过紫外光后，溅射有三化钨的薄膜光催化活性明显高于纯TiO2薄膜。本实验提供了一种制备高可见光活性的TiO2薄膜的方法。     

纳米TiO2／Al2O3复合薄膜光催化特性研究

以电化学方法合成的Al2O3多孔膜为基体，采用交流电沉积的方法在膜孔中沉积纳米TiO2，制备出纳米TiO2／Al2O3复合薄膜。对TiO2／Al2O3复合薄膜的形貌、结构和组成进行了表征；对TiO2／Al2O3复合薄膜光催化甲基橙溶液进行了研究。结果表明Al2O3／TiO2复合薄膜呈现出较好的光催化活性，电沉积TiO2的时间、热处理温度、选择不同光源照射均对TiO2／Al2O3复合薄膜光催化活性有一定的影响。     

TiO2-SiO2复合薄膜光催化活性的研究进展

TiO2-SiO2复合薄膜相对纯TiO2薄膜更有利于提高光催化活性,针对TiO2-SiO2复合薄膜在提高光催化活性方面表现的优异性能,论述了其提高光催化活性的机理。根据近年来国内外TiO2-SiO2复合薄膜的研究现状,对溶胶-凝胶法、离子自组装成膜技术、射频磁控共溅射法、液相沉积法、化学气相法等制备方法的研究进展进行了综述,并对其优缺点进行了比较和评述。展望了TiO2-SiO2复合薄膜进一步研究的方向和需要解决的问题。     

Cover Picture: Novel Structure of AAO Film Fabricated by Constant Current Anodization (Adv. Mater. 19/2007)

Anodized aluminum oxide (AAO) films with a six‐membered ring structure are reported by Shiyong Zhao, Teodor Veres, and co‐workers on p. 3004. The films, with a controlled pore diameter, are prepared by constant current anodization at a high current density. While structurally ordered arrays of nanodots have been fabricated by using this AAO template, the high pore density of this AAO structure may promote its use in many applications, for example in the preparation of mosaic nanowire arrays or photonic devices.     

Combined kinetic and X-ray electron probe microanalysis characterization of local porosity variation and pore shape across anodic alumina films

Porous anodic alumina films on Al were prepared by anodic oxidation of Al in H₂SO₄ electrolyte at a constant temperature and current density and different thicknesses, up to ≈ 41 μm. Their cross section was examined by EPMA for revealing the variation of local porosity across the films and shape of pores while a kinetic model for film growth was developed describing the variation of pore diameter. It was found that the pores open, and local porosity increases, towards the film surface, predicting a conical pore shape, while the results coincided with those obtained by kinetic study. The EPMA analysis combined with kinetic results emerges as a promising tool for studying structural features of these films.     

两步阳极氧化法制备多孔阳极氧化铝膜

直流恒压下,在酸性溶液中对铝实施两步阳极氧化制备了多孔氧化铝膜。采用扫描电镜(SEM)、原子力显微镜(AFM)对制备的多孔氧化铝膜进行形貌分析,孔径在纳米级且孔分布具有高度均匀性。采用SEM对试样进行观察,分析了工艺对多孔氧化铝膜形貌的影响。利用阳极氧化初期电流密度的变化并结合阳极氧化过程中的试样的SEM照片,分析了多孔氧化铝膜的形成机理。     

Optical properties of porous anodic aluminum oxide thin films on quartz substrates

Porous anodic aluminum oxide (AAO) thin films on quartz substrates were fabricated via evaporation of a 100-nm thick Al, followed by anodization with different durations and pore widening and Al removal by chemical etching. The transmittance and reflectance of AAO films on quartz substrates were measured by optical spectrophotometry. The microstructure and morphology were examined by scanning electron microscopy. The pore diameter of AAO films after pore widening and Al removal is 60 ± 4 nm and the interpore distance is 88 ± 5 nm. It is found that the reflectance decreases and the transmittance increases with the increase of the anodization time and pore widening. Compared to a bare substrate, the transmittance of AAO films after pore widening and Al removal is about 3.0% higher, while the reflectance is about 3.0% lower over a wide wavelength range. Additionally, after pore widening and Al removal, when AAO films are prepared on both sides of the quartz substrate, the highest transmittance is about 99.0% in the wavelength range 570-680 nm. The optical constants and thickness of AAO films after pore widening and Al removal were retrieved from normal incidence transmittance data. Results show that the refractive index is lower than 1.25 in the visible optical region and that the porosity is about 0.70.     

非织造基磁控溅射纳米银薄膜导电性能的研究

在室温条件下采用射频磁控溅射在丙纶(PP)、聚乳酸(PLA)熔喷非织造布表面生长纳米银(Ag)薄膜,并且用等离子体预处理样品进行对比。采用扫描电子显微镜(SEM)对其形貌进行表征,采用四探针测试仪对所制备的纳米薄膜的导电性能进行表征。研究溅射时间、孔隙率及孔径分布和等离子处理对非织造基纳米银薄膜的导电性能的影响。实验表明:随着反应溅射时间的增加,薄膜的方块电阻值下降,导电性能增加;孔径大小也影响薄膜的导电性能,随着孔径的增大,薄膜的导电性能降低;等离子体处理对织物表面进行刻蚀,增加了纤维的比表面积,提高了纤维的润湿性能,改善了织物的导电性能。     

Highly Porous Silicon Membranes Fabricated from Silicon Nitride/Silicon Stacks

Nanopore formation in silicon films has previously been demonstrated using rapid thermal crystallization of ultrathin (15 nm) amorphous Si films sandwiched between nm‐thick SiO₂ layers. In this work, the silicon dioxide barrier layers are replaced with silicon nitride, resulting in nanoporous silicon films with unprecedented pore density and novel morphology. Four different thin film stack systems including silicon nitride/silicon/silicon nitride (NSN), silicon dioxide/silicon/silicon nitride (OSN), silicon nitride/silicon/silicon dioxide (NSO), and silicon dioxide/silicon/silicon dioxide (OSO) are tested under different annealing temperatures. Generally the pore size, pore density, and porosity positively correlate with the annealing temperature for all four systems. The NSN system yields substantially higher porosity and pore density than the OSO system, with the OSN and NSO stack characteristics fallings between these extremes. The higher porosity of the Si membrane in the NSN stack is primarily due to the pore formation enhancement in the Si film. It is hypothesized that this could result from the interfacial energy difference between the silicon/silicon nitride and silicon/silicon dioxide, which influences the Si crystallization process.     

溶胶凝胶法制备的TiO2薄膜结构对光催化活性的影响

TiO2多孔纳米薄膜采用溶胶－凝胶法在普通载玻片上制得。薄膜的结构如孔径、孔分布和厚度可控制。通过稀醋酸的分解来测定锐钛矿TiO2多孔薄膜的结构对光催化活性的影响。     

不同孔径纳米氧化铝膜的表征及其对U251细胞形态的影响

为了观察不同孔径的纳米多孔氧化铝膜对U251细胞形态的影响,采用电化学阳极氧化技术分别在硫酸、草酸、磷酸电解液中制备了3种不同孔径的氧化铝膜,用扫描电镜和X射线能谱仪(Energy dispersive X-ray spectroscopy,EDS)分别对氧化铝膜进行了微观结构与元素组成表征。使用倒置显微镜和扫描电镜观察U251细胞在不同孔径的氧化铝膜表面上的形态及生长粘附情况。结果表明,3种孔径的纳米氧化铝膜表面生长的U251细胞形态存在差异,生长情况不同。细胞在磷酸中制得的纳米氧化铝膜的突触生长情况优于草酸中制备的氧化铝膜,突触生长更牢固,硫酸中制得的氧化铝膜对U251细胞生长的支持作用最差。     

Thermal conductivity study of thin He films adsorbed in porous glasses with well controlled pore sizes

Thermal conductivity study of thin He films adsorbed in porous glasses with well controlled pore sizes^[2] is reported. The measurements are performed in a cell where a torsional oscillator monitors the superfluid density change, for the same films for comparison. Since the heat flux through the superfluid is proportional to the superfluid velocity, we discuss the possible observation of the intrinsic critical velocity v_sl = h/ml, inherent in superfluid He films in such porous systems with unit pore length l, as discussed by Minoguchi and Nagaoka^[3], which marks the velocity at which phase slippages start to occur over macroscopic scales.on leave from: Inst. Physics near Prahaon leave from: Lukin's Research Inst. Phys. Problems, Zelnograd, Moscow.     

SAXS analysis of the effect of H2 dilution on microstructural changes of HWCVD deposited a-SiC : H

Hydrogenated amorphous silicon carbon (a-SiC : H) films were deposited by hot wire chemical vapor deposition (HWCVD) and their porosity was investigated by small-angle X-ray scattering (SAXS), XRR and FTIR. SAXS measurement was analyzed by Guiner plot, Porod plot, Debye plot and scaling factor. The measurement of the SAXS results assumed a distribution of spherical pores. This analysis suggested that the maximum of pore size distributions occur for radius of gyration of 5–6 Å. As the H₂ flow rate increases, the pore size distribution narrows and the volume occupied by the pores decreases. A direct relation between the atomic density of a-SiC : H films deposited by HWCVD and the pore volume fraction was also obtained. The low scattering intensity observed for the films deposited by HWCVD showed that they were compact and homogeneous regardless of the H₂ dilution.