二步法合成低温烧结（MQ，Zn）TiO3介电陶瓷

首先采用固相法合成了（Mg，Zn）2TiO4粉体，然后将钛酸丁酯水解制备出TiO2溶胶，再利用TiO2溶胶对已合成的（Mg，Zn）2TiO4粉体进行包覆。包覆后的粉体经500℃预烧后在1150℃烧结成瓷，采用XRD、SEM分别做了样品的物相和显微结构分析，测试结果表明：当TiO2，（Mg，Zn）2TiO4为1．1时，合成产物为纯的（Mg，Zn）TiO3相。在1MHz下测试了样品的介电性能，结果表明：当TiO2／（Mg，Zn）2TiO4为1．1，烧结温度为1150℃时，陶瓷介电性能最好。     

溶胶-凝胶法低温合成Li_(2.06)Nb_(0.18)Ti_(0.76)O_3粉体

以五氧化二铌(Nb2O5)、一水氢氧化锂(LiOH·H2O)和钛酸四丁酯(Ti(C4H9O)4)为原料、柠檬酸为络合剂,通过调节pH值和温度,用溶胶-凝胶法(sol-gel)成功获得透明溶胶。经700℃煅烧,用化学法合成单相钛酸锂(Li2TiO3)固溶体相(Li2.06Nb0.18Ti0.76O3)粉体,其合成温度比普通固相法的低150℃左右。用红外光谱、X射线衍射及扫描电镜(scanning electron microscope,SEM)等表征柠檬酸盐前驱体及煅烧后粉体的性能,详细研究煅烧过程中晶相的转变过程,提出合理的转变机制。结果表明:在煅烧过程中,除Li2TiO3固溶体相外,还出现锐钛矿相TiO2和M相等中间相。随着温度进一步上升,这些中间相消失,最终在700℃得到纯Li2TiO3固溶体相。通过SEM可观察到结晶良好的棒状和块状Li2TiO3固溶体相粉体颗粒。分别研究采用sol-gel和固相法制备样品的烧结性能、显微结及介电性能,结果表明:采用sol-gel得到粉体制备的陶瓷具有特殊的大、小晶粒共存的两种Li2TiO3固溶体相的显微结构,在较低温度(825℃)即达到最大的体积密度3.456g/cm3。与固相法制备样品相比,sol-gel制备样品在同一频率的相对介电常数较小、介电损耗更低。     

溶胶-凝胶法制备Ca0.9La0.2/3Cu3Ti4O12陶瓷及电性能研究

以Ca(NO3)2.4H2O、Cu(NO3)2.3H2O、La(NO3)3、Ti(OC4H9)4为先驱体,利用溶胶-凝胶法合成了Ca0.9La0.2/3Cu3Ti4O12陶瓷粉体,研究了不同物相和粒径粉体的烧结特性以及陶瓷的介电性能和非线性性能。结果表明:干凝胶的煅烧温度低于450℃时,所得粉体主要为无定型态;煅烧温度超过500℃后,晶相开始大量形成;当以无定型粉体或500℃煅烧获得的细小粒径粉体为原料时,均难以获得致密结构的陶瓷;形成完整的粉体原料晶相以及粒径的增大,有利于陶瓷体的致密烧结及电性能的提高。粒径为250～350 nm的陶瓷粉体,在1050℃烧结后获得良好的电性能:介电常数εr=42748,非线性系数α=3.55。     

粉体合成温度对钽酸锶铋陶瓷介电行为的影响

利用五氧化二钽(Ta2O5),碳酸锶(SrCO3)和乏氧化二铋(Bi2O3)等原料,采用传统的粉体固相合成方法,在不同温度800,900,1 000℃和1 100℃合成钽酸锶铋粉体,研究粉体合成温度对钽酸锶铋陶瓷介电性能的影响.X射线衍射结果表明:不同温度下煅烧均能够合成钽酸锶铋单一物相,但是烧结致密程度明显不同,当粉体合成温度较低时,气孔相对细小,尺寸均匀.进一步的介电性能测试表明:粉体合成温度对Curie点和介电强度具有影响.较低粉体合成温度可以在一定程度上改善陶瓷的介电性能;较高的粉体合成温度则导致Curie点偏移,恶化陶瓷的介电性能;介电性能的改变主要和烧结过程中形成气孔缺陷有关.     

溶胶-凝胶法合成Ba0.6Sr0.4TiO3/MgO及介电性能研究

采用溶胶-凝胶法合成了Ba_(0.6)Sr_(0.4)TiO_3/MgO复合粉体,研究了烧结温度和合成工艺对陶瓷样品介电性能的影响。研究结果表明,经650℃热处理即可得到颗粒细小均匀的超细Ba_(0.6)Sr_(0.4)TiO_3/MgO粉体,平均粒径在200 nm左右。烧结温度对陶瓷样品的介电生能有明显的影响,1300℃烧结的陶瓷样品具有优良的性能。与二步合成工艺相比,一步合成工艺制备的陶瓷样品具有更好的介(?)性能。     

A位双元取代对钛铁矿型ZnTiO3陶瓷热稳定性影响

通过XRD、DTA、SEM等测试技术,系统研究了Zn(1-x)(Mg1/2Co1/2)xTiO3(x=0.1～0.4)陶瓷六方钛铁矿结构的热稳定性和显微结构,应用传统固相烧结法制备了Zn(1-x)(Mg1/2Co1/2)xTiO3(x=0.1～0.4)陶瓷。研究表明:由于ZnTiO3、MgTiO3和CoTiO3有类似的六方钛铁矿结构,Mg2 和Co2 都能取代ZnTiO3相中部分Zn2 离子,且能形成热稳定性较强的(Zn,Mg,Co)TiO3固溶体;当取代量x=0.1时,使六方钛铁矿相的热稳定温度提高了约70℃,拓宽了六方钛铁矿相的热稳定温度范围,能够制备出优良微波介电性能且烧结温度范围较宽微波介质材料。     

CuO包覆制备低温烧结的Ba_2Ti_9O_(20)微波介质陶瓷（英文）

以BaCO3和TiO2粉末进行固相反应来合成Ba2Ti9O20主晶相,分别以液相包覆法和固相混合法引入助烧剂CuO来降低Ba2Ti9O20的烧结温度。研究了CuO对Ba2Ti9O20陶瓷的烧结和介电性能的影响。结果表明,液相包覆CuO后,Ba2Ti9O20陶瓷的烧结温度从1400℃降至1200℃。CuSO4溶液的浓度为0.32 mol/L,1200℃烧结4 h所制得Ba2Ti9O20陶瓷的介电性能良好:εr=43,tanδ=0.005,τf=-7 ppm/℃(1 MHz)。     

Bi4B2O9对(Ca0.2Sr0.05Li0.375Sm0.375</sub>TiO3陶瓷烧结和微波介电性能的影响

采用传统固相法制备(Ca0.2Sr0.05Li0.375Sm0.375)TiO3钙钛矿微波介质陶瓷,研究了Bi4B2O9对(Ca0.2Sr0.05Li0.375Sm0.375)TiO3陶瓷微波介电性能的影响,利用X射线衍射仪、扫瞄电子显微镜和矢量网络分析仪对其晶体结构、显微组织和微波介电性能进行了研究。结果表明:掺10%Bi4B2O9的(Ca0.2Sr0.05Li0.375Sm0.375)TiO3陶瓷,其烧结温度由1 300℃降至1 080℃。当添加3.5%Bi4B2O9时,其最佳烧结温度为1 150℃,陶瓷的微波介电性能最佳(相对介电常数εr=116.9;品质因数Q×f=3 500GHz;频率温度系数τf=1.2×10-6/℃)。     

Bi_4B_2O_9对(Ca_(0.2)Sr_(0.05)Li_(0.375)Sm_(0.375_)TiO_3陶瓷烧结和微波介电性能的影响

采用传统固相法制备(Ca0.2Sr0.05Li0.375Sm0.375)TiO3钙钛矿微波介质陶瓷,研究了Bi4B2O9对(Ca0.2Sr0.05Li0.375Sm0.375)TiO3陶瓷微波介电性能的影响,利用X射线衍射仪、扫瞄电子显微镜和矢量网络分析仪对其晶体结构、显微组织和微波介电性能进行了研究。结果表明:掺10%Bi4B2O9的(Ca0.2Sr0.05Li0.375Sm0.375)TiO3陶瓷,其烧结温度由1 300℃降至1 080℃。当添加3.5%Bi4B2O9时,其最佳烧结温度为1 150℃,陶瓷的微波介电性能最佳(相对介电常数εr=116.9;品质因数Q×f=3 500GHz;频率温度系数τf=1.2×10-6/℃)。     

Mg4Nb2O9/CaTiO3复合介质陶瓷的结构和介电性能

以1.7%(质量分数)V2O5为烧结助剂,采用传统固相反应法制备了(1-x)Mg4Nb2O9 xCaTiO3[(1-x)MN-xCT]颗粒复合微波介质陶瓷.研究了陶瓷的微观结构和微波介电性能.结果表明:当0.5≤x≤0.7时,经1 150℃烧结5 h制备的(1-x)MN-xCT样品仍为Mg4Nb2O9和CaTiO3相,没有生成其它新相,在不同相之间存在元素扩散.当x从0.3增加到0.7,样品的相对介电常数(εr)和谐振频率(f)温度系数(τf)随x值的增加而增大,而品质因数(Q)却随x增大而降低.当x=0.5,1 150℃烧结5h后,获得的0.5Mg4Nb2O9/0.5CaTiO3 1.7%V2O5微波介质陶瓷的εr=20,Qf=48000 GHz(f=8 GHz),τf=12×10-6/℃.     

Signature of rigidity percolation effect in dielectric behavior of germanium containing multi-component chalcogenide glasses (ChGs)

To develop new chalcogenide glasses (ChGs) as dielectric materials having a high dielectric constant and low dielectric loss, some quaternary glasses have been prepared from a novel third-generation Se–Te–Sn-Ge (STSG) system. This study reveals the effect of Ge addition on the dielectric relaxation and thermally activated a.c. conduction in a ternary ChG of Se–Te–Sn (STS) system. The compositional variation of the various dielectric and electrical parameters in the present STSG chalcogens rich non-oxide glasses Se_78-yGe_yTe₂₀Sn₂ (0 ≤ y ≤ 6) has been investigated. The results show that Ge plays a potential role in improving the dielectric properties of the parent STS glass.The dielectric relaxation and thermally assisted a.c. conduction have been investigated by examining the frequency/temperature dependence of dielectric constant/loss. The absence of the dielectric relaxation for the higher concentration of Ge indicates that the relationship of microstructure and dielectric properties can be explained in terms of the stiffness transition followed by the self-organization of the corner sharing and the edge-sharing arrangements of GeSe₄ phase.     

Dielectric breakdown toughness from filament induced dielectric breakdown in borosilicate glass

The dielectric breakdown strength of borosilicate glass was measured as a function of the length of a conducting filament in order to determine the critical energy release for the growth of a breakdown channel. The concept is similar to the experimental determination of the toughness in fracture mechanics and based on a Griffith type model for the electrical energy release rate in dielectric materials with space charge limited conductivity. By Focused-Ion-Beam-milling and Pt-deposition, up to 100?μm long conductive channels were fabricated in 163?μm thick borosilicate glass substrates. The dielectric breakdown strength of substrates with filaments longer than 30?μm could be very well described by a $\frac{1}{\sqrt{filamentlength}}$ -dependence predicted by the model Schneider, 2013. With these results for the first time a critical energy release rate for dielectric breakdown was determined being 6.30?±?0.95?mJ/m.     

Increasing the performance of dielectric elastomer actuators: A review from the materials perspective

Electro-active polymers (EAPs) are emerging as feasible materials to mimic muscle-like actuation. Among EAPs, dielectric elastomer (DE) devices are soft or flexible capacitors, composed of a thin elastomeric membrane sandwiched between two compliant electrodes, that are able to transduce electrical to mechanical energy, actuators, and vice versa, generators. Initial studies concentrated mainly on dielectric elastomer actuators (DEAs) and identified the electro-mechanical principles and material requirements for an optimal performance. Those requirements include the need for polymers with high dielectric permittivity and stretchability and low dielectric loss and viscoelastic damping. Hence, attaining elastomeric materials with those features is the focus of current research developments. This review provides a systematic overview of such research, highlighting the advances, challenges and future applications of DEAs.     

Dielectric dispersion near the morphotropic phase boundary of 0.64PMN-0.36PT ceramics

A near morphotropic phase boundary (MPB) composition of PMN-PT ceramic, 0.64Pb(Mg_1/3Nb_2/3)O₃-0.36PbTiO₃, has been synthesized for various piezoelectric, ferroelectric and dielectric applications. The relaxation mechanisms and dielectric characteristics of this solid solution have been investigated with dielectric spectroscopy measurements in the frequency range of 20 Hz–2 MHz. The dielectric properties have shown distinct and prominent Debye type relaxation at the temperatures corresponding to the ferroelectric phase. The peak in dielectric loss parameter has been found to be dominated by the dc conductivity in paraelectric phase. The experimentally obtained values of various parameters have been found in agreement with the values obtained by fitting of the experimental data in Debye model. An excellent agreement of the results with Debye distribution of relaxation times was obtained with the distribution parameter α showing minima around the ferro-to para-electric phase transition. Different activation energies of the relaxation time have been observed in the ferroelectric and paraelectric phases. An average relaxation time has been found to decrease from ～10^?3 s to ～10^?6 s with the increasing temperatures.     

High frequency dielectric characterization of graphene doped flexible ceramics multilayers

This paper explores the tape casting technique to produce flexible heterostructured multilayers composed of graphene nanoplatelets doped Alumina and Ceria doped Nickel Oxide-Gadolinium. Given the excellent mechanical and electrical properties of graphene, multilayers were structured to explore the dielectric properties at a high-frequency regime. The stability of the suspensions, measured by rheological characterization, showed a pseudoplastic behavior. The structural properties of the flexible tapes were analyzed by X-ray diffraction and scanning electron microscopy. Electrical properties obtained through I ? V curves showed an insulating behavior. The dielectric characterization was measured at a high-frequency regime (0.01 up to 1.5 GHz). The findings reflect the strong dependence of the dielectric behavior with the multilayer structure and graphene nanoplatelets doping concentration in the Alumina. The results open new perspectives of multifunctionalization flexible ceramics tapes for high-frequency applications.     

Core@double-shell structured fillers for increasing dielectric constant and suppressing dielectric loss of PVDF-based composite films

High dielectric constant polymer dielectrics have attracted a great deal of attention in flexible electronics. However, it appears to be a paradox for polymer dielectrics that the enhancement of their dielectric constant often comes along with the increase of dielectric loss. Hence, we reported core@double shell structured filler/poly(vinylidene fluoride) (PVDF) composites to overcome this paradox. The hybrid filler with BaTiO₃ (BT) as the core, conductive carbon as the inner shell, and insulating polydopamine (PDA) as the outer shell was synthesized. As a result, the BT@C@PDA/PVDF composites at the filler content of 11 vol% exhibit an outstanding dielectric performance with a dielectric constant of 45 and a dielectric loss of 0.053 at 10³ Hz. This phenomenon can be attributed to the increased interfacial polarization induced by the inner carbon shell and the conductive paths blockade caused by the outside PDA shell inside the BT@C@PDA/PVDF composites. This work reveals that rational design of core@double shell structured hybrid fillers maybe a promising way to optimize the overall dielectric performance of the PVDF-based composites.     

通信用片式介质陶瓷双工器的设计与制作

介绍了通信用介质陶瓷双工器的设计方法和制作过程。该双工器是由接收滤波器和发射滤波器组成的。每种滤波器是由一块高介电常数、高Q值和接近零温度系数的介质陶瓷块制成的。这个陶瓷块上包含两个四分之一波长同轴谐振腔、输入及输出电极和耦合装置,并且输入及输出电极在陶瓷块的同一侧面上,因此滤波器具有体积小巧,结构稳定和安装方便的特点。采用介电常数为90的陶瓷材料制作了中心频率分别为903MHz和927MHz的接收和发射滤波器,经网络分析仪测试,各项技术指标满足设计要求。     

Subsolidus solution and electrical properties of Sr-substituted bismuth magnesium niobate pyrochlores

Here we investigated the structural and dielectric properties of (Bi_3.36Mg_0.64-xSr_x)(Mg_1.28Nb_2.72)O_13.76 (0≤ x≤0.5) subsolidus solution. Sr-substituted bismuth magnesium niobate (BMSN) pyrochlores were prepared by solid-state reaction at 1025 °C over 1–2 days. X-ray diffraction (XRD) analysis confirmed that the BMSN pyrochlores crystallise in cubic symmetry, space group Fd3m with lattice parameters in the range 10.5968 (4)-10.5671 (17) Å. The surface morphologies of these samples, as confirmed by Scanning Electron Microscopy (SEM), were composed of irregular shaped grains. Both Scherrer and Williamson-Hall methods revealed that the crystallite sizes were in the range 46–75 nm. No thermal event was discernible over the temperature range 30–1000 °C, thus confirming the thermal stability of these materials. On the other hand, Arrhenius conductivity plots showed the BMSN pyrochlores to be highly insulating with activation energies of ~1.20–1.49 eV. At ~30 °C and 1 MHz, BMSN pyrochlores exhibited moderate high bulk dielectric constants, ɛ’, 90–186 and low dielectric losses, tan δ in the order of 10⁻²–10⁻¹, respectively. Both the ɛ’ and tan δ values of the BMSN pyrochlores showed a nearly two-fold decrease with increasing Sr concentration. Negative temperature coefficient of capacitances, TCC, −408 to −713 ppm/°C were recorded over ~30–300 °C at 1 MHz.     

Electrochemical performance of quaternary (1-x)ZnMn2O4/(x)MgFe2O4 solid solution as supercapacitor electrode

Novel nano quaternary metals solid solutions from MgFe₂O₄ and ZnMn₂O₄ were synthesized using a sol-gel procedure. The development of a solid solution and the formed phase were examined by phase analysis utilizing the X'Pert High Score Plus program and Fourier transform infrared (FTIR) spectroscopy technique. Rietveld analysis of X-ray diffraction data (XRD), scanning electron microscope (SEM/EDS) and transmission electron microscope (TEM) were applied to determine the lattice parameters, crystallite size, different cations distribution and elemental analysis of the formed solid solutions. The measured dielectric properties of obtained solid solutions are found to be affected by the composition ratio (x). The solid solution (1-x)ZnMn₂O₄/(x)MgFe₂O₄ samples exhibited a ferroelectric–paraelectric transition at ferroelectric Curie temperature (T_c). The different hopping mechanisms in the different samples were also examined. The electrochemical performance was tested and influence of composition ratio (x) on the cathodic and anodic potential was investigated. The specific capacitance (C_s) value of electrodes depended on the composition ratio (x) beside the type of cations forming oxides. The (0.9)MgFe₂O₄/(0.1)ZnMn₂O₄ sample showed the best performance as a supercapacitor material. The outstanding electrochemical property of the (0.9)MgFe₂O₄/(0.1)ZnMn₂O₄ electrode was further confirmed by EIS inspection. The super stability of MgFe₂O₄/ZnMn₂O₄ solid solution could be attributed to the activation of the solid solution materials during the CV cycling and the synergistic effects.