ZnO/GO纳米材料基热稳定钙钛矿太阳能电池（英文）

为了使钙钛矿太阳能电池在高温退火后能够保持稳定,本研究通过电化学方法制备出氧化锌/氧化石墨烯纳米粒子,并将其运用到钙钛矿太阳能电池中作为电子传输层使用。通过原位掠入射X射线衍射(GIXRD)、X射线衍射(XRD)、扫描电子显微镜(SEM)和紫外–可见吸收光谱(UV-Vis)等方法对沉积在氧化锌和氧化锌/氧化石墨烯纳米材料上面的甲胺铅碘的结构、形貌以及电池性能变化进行分析测试。结果表明:氧化锌/氧化石墨烯对于甲胺铅碘有保护作用,沉积在氧化锌/氧化石墨烯上面的甲胺铅碘薄膜稳定性更高,电池性能更加稳定,为将来大面积应用提供了一定的指导。     

高稳定性(EDA)(FA)2[Pb3I10]层状钙钛矿薄膜的制备与表征

为了提高钙钛矿太阳能电池在潮湿环境中的稳定性, 采用一步法, 通过在DMF中混合(EDA)I₂、(FA)I和PbI₂, 将乙二胺离子引入钙钛矿晶格, 成功制备了一种具有较高稳定性的二维片层状的钙钛矿结构薄膜。通过原位掠入射X射线衍射(GIXRD)、X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见吸收光谱(UV-Vis)和原子力显微镜(AFM)等方法检测分析(EDA)(FA)₂[Pb₃I₁₀]在低湿度及高湿度环境下的结构、形貌以及光学性能变化。结果表明: 制备的 (EDA)(FA)₂[Pb₃I₁₀]薄膜在相同湿度环境下比当前广泛应用于钙钛矿太阳能电池的甲胺铅碘薄膜(CH₃NH₃PbI₃)稳定性更高; 薄膜的光学带隙约为1.67 eV, 与太阳能电池最佳带隙比较接近。另外, (EDA)(FA)₂[Pb₃I₁₀]薄膜在可见光范围吸光性能较好; 薄膜的粗糙度很小, 适合制备太阳能电池, 而且, 成本较硅基太阳能电池低廉, 在分子水平较CH₃NH₃PbI₃的可调谐性更大, 使钙钛矿太阳能电池在未来大面积应用成为可能。     

碳纳米管制备石墨烯片及其储锂性能研究

用多壁碳纳米管作为起始原料,通过化学氧化、离心分离、高温膨胀和超声剥离等步骤制备了石墨烯片。采用透射电子显微镜(TEM)、X射线衍射(XRD)、傅里叶变换红外光谱(FT-IR)对石墨烯片的形貌和结构进行分析。通过恒流充放电和交流阻抗测试研究了石墨烯片作为锂离子电池负极材料的储锂性能。结果表明,石墨烯片在50mA/g的电流密度下,首次可逆比容量为859mAh/g,经过50次循环后比容量仍保持在410mAh/g,远高于碳纳米管(217mAh/g),表明石墨烯片具有优异的储锂性能。     

超高分子量聚乙烯/石墨烯纳米复合材料的制备及其热性能的研究

为了提高超高分子量聚乙烯的热性能,本文通过溶液共混的方法利用氧化石墨烯改性不同分子量的超高分子量聚乙烯,然后利用红外测试(FTIR)、X射线衍射测试(XRD)、扫描电镜测试(SEM)、差热扫描量热分析仪(DSC)和热失重分析(TG)的方法对超高分子量聚乙烯/石墨烯纳米复合材料的结构、表面形态和性能进行了研究.通过分析测试表明氧化石墨烯在超高分子量聚乙烯/石墨烯纳米复合材料中的分散性良好,氧化石墨烯的添加量为0.3%时,石墨烯/超高分子量聚乙烯的复合材料的热稳定性等性能最好,与原材料相比提高了3℃.     

低温剥离法制备高性能石墨烯/ZnO复合材料

采用氧化石墨和七水合硫酸锌作为初始反应物, 在低温下(80℃)合成了氧化石墨/ZnO, 然后通过低温剥离法制备了高质量石墨烯/ZnO (GNS/ZnO)复合材料. 采用X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱、热重分析仪(TG)、X射线光电子能谱(XPS)、拉曼光谱(RS)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等分析手段对石墨烯/ZnO样品进行了表征. 结果表明: 氧化石墨还原彻底, 纳米ZnO成功地负载到了石墨烯上, 有效地减少了石墨烯片层间的团聚现象. 通过对ZnO和石墨烯/ZnO荧光性能测试, 结果表明: 石墨烯/ZnO发生了荧光淬灭现象, 在光电子领域拥有广阔的应用前景.     

大面积石墨烯薄膜的电沉积制备与性能调控研究

首先采用改性Hummers法制备了氧化石墨烯(GO)分子膜,然后通过电泳沉积(EPD)技术在Cu箔上电化学沉积了氧化石墨烯膜(EPD-GO),最后导入氢气气氛(800℃)下退火还原,得到大面积导电石墨烯薄膜(TRGE)。利用X射线衍射(XRD)、拉曼(Raman)光谱、场发射扫描电镜(FESEM)、高分辨透射电镜(HRTEM)、四探针测试仪和电化学工作站分别研究了各阶段产物的物相、形貌、谱学、导电性和电容性能,证明了所制备的石墨烯薄膜具有良好的机械柔韧性和导电性能;同时,还对石墨烯薄膜的成膜及导电性能优化机理进行了探讨。     

自支撑氮掺杂石墨烯纸柔性电极的制备及其储锂性能的研究

以氧化石墨烯(GO)为原料,尿素为氮掺杂剂,采用固/气界面水热反应的方式,即在反应釜内将GO抽滤得到的氧化石墨烯纸(GOP)与尿素分解产生的氨蒸气相互作用,成功制备出自支撑氮掺杂石墨烯纸(NGP)。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、拉曼光谱(RS)、X射线光电子能谱(XPS)和电化学测试对样品进行形貌结构及电化学性能的表征。测试结果表明:水热条件下尿素能有效地实现氧化石墨烯纸的氮掺杂,氮掺杂量为7.89%;氮掺杂石墨烯纸在100mA/g和500mA/g的电流密度下,充放电循环100周之后,放电比容量可分别保持在288mAh/g和190mAh/g。采用改进的固/气界面水热反应法制备的氮掺杂石墨烯纸较未掺杂石墨烯纸可逆比容量提高了近2.5倍,具有良好的循环稳定性,可为制备高性能的柔性锂离子电池负极材料提供新方法。     

新能源材料

正美国研发耐高温柔性太阳能电池转换效率达11.8%美国爱荷华州立大学的研究人员开发出一种柔性钙钛矿太阳能电池,其效率为11.8%,并具有较强的耐高温性。科学家使用逐层气相沉积技术,将碘化铅(PbI_2)和溴化铯(CsBr)前驱体的薄层制成了无机混合卤化物钙钛矿太阳能电池。研究人员指出,使用无机化合物(例如铯)有助于使电池具有更高的耐热性。他们称,在72h的X射线衍射分析中,该电池即使在200℃下也没有显示出热降解。(中国半导体行业协会)     

一步合成还原氧化石墨烯/MnO2复合材料及其电化学性能

通过水热法, 利用氧化石墨烯(GO)和二价锰盐, 一步合成了还原氧化石墨烯/MnO₂(RGO/M)复合电极材料。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、拉曼光谱(RS)、傅里叶红外光谱(FTIR)和场发射扫描电镜(FESEM)等测试电极材料的物性, 通过循环伏安、交流阻抗和恒流充放电等方法研究电极材料的电化学性能。结果表明, 在一定水热反应条件下, 通过控制GO与二价锰盐配比, 可以调节RGO/M的结构及其电化学性能。在1 A/g电流密度下, 所得RGO/M复合电极的比电容可达277 F/g, 经过500次循环后, 保持率达到98%。     

氧化锌量子点修饰磁性石墨烯三元复合材料制备和光催化性能

通过溶剂热法和溶胶-凝胶法分别制备磁性石墨烯和氧化锌量子点,然后通过超声的方法将氧化锌量子点成功负载到磁性石墨烯上制得氧化锌量子点修饰的磁性石墨烯三元复合材料。通过透射电镜(TEM)和X射线衍射(XRD)对制得的材料进行表征。结果显示氧化锌量子点均匀地分布在石墨烯表面,粒径为5nm。通过在紫外光照射下降解亚甲基蓝来研究复合材料的光催化性能。结果显示,对亚甲基蓝的降解率,单纯的氧化锌量子点为53.32%;而氧化锌量子点修饰的磁性石墨烯三元复合材料提高到了87.56%,即使在使用5次后仍然具有较高的光催化活性和稳定性。     

Core/Shell ZnO/ZnS Nanoparticle Electron Transport Layers Enable Efficient All-Solution-Processed Perovskite Light-Emitting Diodes

Solution-processed perovskite-based light-emitting diodes (PeLEDs) are promising candidates for low-cost, large-area displays, while severe deterioration of the perovskite light-emitting layer occurs during deposition of electron transport layers from solution in an issue. Herein, core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer in PeLED based on quasi-2D PEA₂Cs_n−1Pb_nBr_3n+1 (PEA = phenylethylammonium) perovskite are employed. The deposition of ZnS shell mitigates trap states on ZnO core by anchoring sulfur to oxygen vacancies, and at the same time removes residual hydroxyl groups, which helps to suppress the interfacial trap-assisted non-radiative recombination and the deprotonation reaction between the perovskite layer and ZnO. The core/shell ZnO/ZnS nanoparticles show comparably high electron mobility to pristine ZnO nanoparticles, combined with the reduced energy barrier between the electron transport layer and the perovskite layer, improving the charge injection balance in PeLEDs. As a result, the optimized PeLEDs employing core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer exhibit high peak luminance reaching 32 400 cd m⁻², external quantum efficiency of 10.3%, and 20-fold extended longevity as compared to the devices utilizing ZnO nanoparticles, which represents one of the highest overall performances for solution-processed PeLEDs.     

Low power and stable resistive switching in graphene oxide-based RRAM embedded with ZnO nanoparticles for nonvolatile memory applications

The present study reports the role of zinc oxide nanoparticles (ZnO NPs) embedded in graphene oxide (GO)-based RRAM for non-volatile memory applications. GO thin film embedded with different concentrations of ZnO NPs was deposited on bottom electrode, i.e., indium tin oxide (ITO) coated glass. Thermal evaporation technique was used for the fabrication of top electrodes for electrical measurements. Structural and morphological studies of synthesized GO and ZnO NPs were done by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR). Switching characteristics of the RRAM devices were investigated using electrical measurements. It has been observed that the optimized concentration of ZnO NPs (20%) shows stable switching behavior with low SET (??0.61 V) and RESET (+?0.65 V) voltages as compared to pure GO devices. The switching of the fabricated memory devices from high resistance state (HRS) to low resistance state (LRS) has been found due to conductive filament formed between top and bottom electrodes. This conductive filament has been confirmed by the change in resistance as a function of temperature. The Al/GO-ZnO(20%)/ITO devices show stable endurance behavior for >?50 cycles and retention behavior for >?4?×?10³ s. In HRS, the dominated conduction mechanism was found to be space-charge limited conduction (SCLC), whereas in LRS, the Ohmic conduction mechanism was observed. The incorporation of ZnO NPs increased the number of oxygen vacancies in switching layer which eventually enhanced the formation of conductive filament. This phenomenon has been confirmed using XPS characterization of the switching layer. These optimized concentrations of ZnO embedded in GO switching layers provide a way for future low power non-volatile memory devices.

     

Enhanced sensitivity and response speed of graphene oxide/ZnO nanorods photodetector fabricated by introducing graphene oxide in seed layer

Graphene/ZnO nanocomposites photodetectors hold great potential for UV detection because of the combination of photosensitive ZnO and high electron-mobility graphene. In this paper, graphene oxide (GO)/ZnO nanorods photoconductive photodetector with seed layer of GO and ZnO nanocrystals (NCs) hybrids is fabricated via a low-cost solution process. Uniform and oriented GO/ZnO nanorods have been obtained due to the positive role of GO in the growth process of ZnO nanorods, which gives rise to less light scattering and thereby stronger absorption and enhanced photocurrent. When the growth time is 1 h, the optimum photocurrent of GO/ZnO nanorods is about 9.4 times than pure ZnO nanorods, meanwhile, the corresponding detectivity reaches 7.17?×?10¹¹ cm Hz^1/2 W^?1. In addition, owing to the high carrier mobility of graphene, the response time t ₉₀ of GO/ZnO photodetector beneficially decreases to ~1 s, which is much faster than many other GO/ZnO hybrid photodetectors.     

氧化石墨烯/聚酰亚胺复合薄膜的制备及阻水性能

以石墨粉为原料,采用改进的Hummers法制备氧化石墨烯（GO）,采用原位聚合法制备GO/聚酰亚胺酸（PAA）前驱体,GO/PAA前驱体经高温固化处理后得到GO/聚酰亚胺（PI）复合薄膜;采用XRD、Raman、FTIR、AFM等表征手段对GO的结构进行表征;此外,研究了不同固化温度下PI薄膜的结构;最后测试了GO/PI复合薄膜的透湿率和力学性能。结果表明:GO为单层结构,厚度为1.26 nm。GO/PI复合薄膜表现出良好的阻水性能,当GO/PI复合薄膜中GO的添加量为0.025wt%、薄膜厚度为50 μm时,GO/PI复合薄膜的透湿率低至56.7 g（m2·d）-1。此外,0.025wt% GO/PI复合薄膜拉伸强度和断裂伸长率分别为150.8 MPa和13.5%,与PI薄膜（分别为126.9 MPa和8.1%）相比,分别增加了18.8%和66.7%。      

The use of aluminium doped ZnO as transparent conductive oxide for CdS/CdTe solar cells

CdTe/CdS and CdTe/ZnO thin film solar cells were grown with a high vacuum evaporation based low temperature process (≤ 420 °C). Aluminium doped zinc oxide (AZO) was used as transparent conducting oxide (TCO) material. AZO exhibited excellent stability during the solar cell processing, and no significant change in electrical conductivity or transparency was observed. The current density loss due to absorption in the 1 μm thick AZO layer with 5 Ω per square sheet resistance was found to be 1.2 mA/cm². We investigated the influence of an intrinsic ZnO layer (i:ZnO) in combination with various CdS thicknesses. The i:ZnO layer was found to significantly increase the open circuit voltage of the solar cells with very thin CdS layer. Increasing thickness of the i:ZnO layer leads to UV absorption losses, narrowing of the depletion layer width and hence reduced collection efficiency in the long wavelength (685-830 nm) part. With AZO/i:ZnO bi-layer TCO we could achieve cell efficiencies of 15.6% on glass and 12.4% on the flexible polyimide film.     

Efficient,Hysteresis‐Free,and Stable Perovskite Solar Cells with ZnO as Electron‐Transport Layer: Effect of Surface Passivation

The power conversion efficiency of perovskite solar cells (PSCs) has ascended from 3.8% to 22.1% in recent years. ZnO has been well‐documented as an excellent electron‐transport material. However, the poor chemical compatibility between ZnO and organo‐metal halide perovskite makes it highly challenging to obtain highly efficient and stable PSCs using ZnO as the electron‐transport layer. It is demonstrated in this work that the surface passivation of ZnO by a thin layer of MgO and protonated ethanolamine (EA) readily makes ZnO as a very promising electron‐transporting material for creating hysteresis‐free, efficient, and stable PSCs. Systematic studies in this work reveal several important roles of the modification: (i) MgO inhibits the interfacial charge recombination, and thus enhances cell performance and stability; (ii) the protonated EA promotes the effective electron transport from perovskite to ZnO, further fully eliminating PSCs hysteresis; (iii) the modification makes ZnO compatible with perovskite, nicely resolving the instability of ZnO/perovskite interface. With all these findings, PSCs with the best efficiency up to 21.1% and no hysteresis are successfully fabricated. PSCs stable in air for more than 300 h are achieved when graphene is used to further encapsulate the cells.     

Surface modification of carbon post arrays by atomic layer deposition of ZnO film

The applicability of atomic layer deposition (ALD) process to the carbon microelectromechanical system technology was studied for a surface modification method of the carbon post electrodes. A conformal coating of the ALD-ZnO film was successfully demonstrated on the carbon post arrays which were fabricated by the traditional photolithography and subsequent two-step pyrolysis. A significant Zn diffusion into the underlying carbon posts was observed during the ALD process. The addition of a sputter-deposited ZnO interfacial layer efficiently blocked the Zn diffusion without altering the microstructure and surface morphology of the ALD-ZnO film.     

ZnO/SiC/Si异质结构的特性

用MOCVD方法在p型单晶Si（100）基片上外延SiC层,再用直流溅射在SiC层上生长ZnO薄膜,制备出ZnO／SiC／Si异质结构,用XRD和AFM分析了ZnO／SiC／Si和ZnO／Si异质结构中表层ZnO的结构和形貌的差别,研究了这种异质结构的特性．结果表明,在Si（100）基片上外延生长出的是高取向、高结晶质量的SiC（100）层．这个SiC层缓冲层使在Si基片上外延生长出了高质量ZnO薄膜,因为ZnO与SiC的晶格失配比ZnO与Si的晶格失配更低．     

Graphene oxide modified ZnO nanorods hybrid with high reusable photocatalytic activity under UV-LED irradiation

In this work, graphene oxide/zinc oxide (GO/ZnO) hybrid was prepared through a facile hydrothermal process. Transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectra and N₂ adsorption and desorption isotherms were used to investigate the morphology, crystal structure, optical properties and specific surface area of GO/ZnO hybrid. It was shown that the well-dispersed ZnO nanorods were deposited on GO homogeneously. Photocatalytic properties of GO/ZnO nanorods hybrid were evaluated under 375 nm light-emitting diode light irradiation for photodegradation of methylene blue (MB). The synergic effect between GO and ZnO was found to lead to an improved photo-generated carrier separation. An optimal GO content has been determined to be 3 wt%, and corresponding the apparent pseudo-first-order rate constant kapp$k_{\text{app}}$ is 0.0248 min⁻¹, 4.3 times and 2.5 times more than that of pure ZnO nanorods and commercial P25 photocatalyst, respectively. Moreover, the cyclic photocatalytic test indicated that GO/ZnO hybrid can be reused for degradation of MB, suggesting the possible application of GO/ZnO hybrid as excellent candidate for water treatment.     

透明致密ZnO薄膜的恒电流沉积及生长过程研究

采用阴极恒电流沉积方法, 以Zn(NO ₃)₂水溶液为电沉积液, 在经电化学预处理后的ITO导电玻璃上生长了具有c轴高度择优取向、均匀致密的透明ZnO薄膜. 采用X射线衍射、扫描电镜和光学透过谱等技术, 对不同沉积时间条件下薄膜的结晶特性、表面和断面结构、光学性质等进行了研究. 结果表明, 沉积时间对ZnO薄膜质量影响明显: 在薄膜生长后期(120min), ZnO薄膜的结晶性和表面平整度明显降低, 晶粒尺寸增大, 可见光透过率下降, 表明高质量ZnO薄膜的电化学沉积有一最佳生长时间; 此外, 薄膜厚度随时间呈线性变化, 表明可通过生长时间实现对ZnO薄膜厚度的精确控制.