核壳结构纳米线阵列Co/Si复合负极的制备及其锂电性能

硅作为锂电池负极材料虽然具有非常高的理论比容量(3600mAh·g-1),但因其充过电过程中严重的体积效应而导致电极循环性能差,同时硅为半导体材料,导电性较差。本论文以泡沫镍材料为基体,通过水热、氢化还原以及磁控溅射等制备工艺制备了具有核壳结构的自支撑纳米线阵列的复合负极,纳米线阵列的结构设计可以有效释放硅膨胀时产生的内应力,抑制粉化现象。另外较大的比表面积还能有效增加Co/Si薄膜与电解液的接触面积,加快Li+在液/固相中的传输速率,降低电极的极化现象。在500mA·g-1电流密度下循环100次后Co/SiNWs的比容量为1260mAh·g-1,单圈容量衰减仅有0.02%。将电流密度提升至1000mA·g-1,500次反复充放电后依然有90.6%的容量留存。在高倍率下Co/Si NWs电极也有不俗的表现,4000mA·g-1下循环比容量达880mAh·g-1,当电流密度回到500mA·g-1时,容量可恢复至初始的93%。优异的电化学性能表明本文设计的硅基复合负极材料较好地克服了硅材料应用中的体积膨胀和导电性差的问题。     

锂离子电池Si/C复合负极材料的合成与性能

采用球磨-热解工艺制备了Si/C复合负极材料。研究了球磨时间对Si/C复合负极材料结构和电化学性能的影响,并分析了电极的失效机理。研究结果表明,通过球磨可以将纳米硅颗粒均匀分散于石墨基体材料表面,同时,葡萄糖热解后形成的无定形碳使两者紧密结合。球磨3h合成的材料具有最优的电化学性能。以100mA/g的电流密度放电,首次放电容量达到1340mAh/g,首次充放电效率为75.6%,循环50次后,容量保持率为34.2%。     

非晶碳纳米管新型锂离子电池负极材料

研究了非晶碳纳米管作为锂离子电池负极材料的电化学行为以及氧化处理对其嵌锂容量的影响. 结果表明:在20mAh·g-1的充放电条件下,原始非晶碳纳米管首次可逆容量为305mAh·g-1;在300-450℃氧化处理后,非晶碳纳米管中的氧和氢氧根中和了管壁中的大量不饱和键,非晶碳纳米管中死锂的位置减少,纯度提高,嵌锂可逆容量增加.在300℃氧化处理的非晶碳纳米管首次可逆容量最高可达533mAh·g-1,并有良好的循环寿命.     

通过构筑嵌覆型碳结构提升Nb2O5的储锂性能

嵌入型过渡金属氧化物因具有安全的工作电压、高比容量和快速的嵌锂能力而受到广泛关注.但低本征电导率特性严重影响其作为锂电负极材料的寿命和性能.本文通过简便易行、可规模化放大的二氧化碳热处理方法构筑了具有新型嵌覆型碳结构的Nb₂O₅/C纳米杂化材料.在控制碳含量的前提下,实现了颗粒聚集体内部表面可控碳包覆.以嵌覆型碳结构的Nb₂O₅/C纳米杂化材料为负极组装的锂离子电池在40 mA g(-1)电流密度下容量可达387 mA hg(-1),而在200 mA g(-1)电流密度下循环500次后,容量保持率在92%以上.采用电化学滴定、差分电化学质谱(DEMS)等方法对嵌覆型五氧化二铌/碳纳米杂化材料脱嵌锂动力学过程以及产气行为进行了研究.本文提出的嵌覆型碳结构有望为高性能嵌入型过渡金属氧化物的结构设计提供参考.     

一种Si/NiSi2@C复合锂离子电池负极材料的高效制备及其电化学性能

以Si粉和Ni粉为主要原材料,通过对Si粉和Ni粉的球磨处理,结合柠檬酸碳源的高温热解,制备出一种碳包覆的Si/NiSi_2@C复合材料。采用多种技术手段研究了不同Ni添加量和原位碳的引入对复合材料结构形貌及其作为锂离子电池负极材料的电化学性能的影响。结果表明,Si粉和Ni粉在球磨过程中反应生成了NiSi_2合金相,弥散分布于复合材料中。柠檬酸高温裂解碳包覆于Si/NiSi_2复合颗粒表面,为复合材料构建了良好的导电网络。NiSi_2和高温裂解碳不仅增加材料的导电性,而且缓冲了脱嵌锂过程中Si的体积膨胀,有效地提高了材料的电化学性能。由于NiSi_2的电化学嵌锂活性低,随着Ni添加量的增加,材料的首次充放电容量降低,但材料的循环稳定性有所增加。其中当Ni的添加量为5wt%的Si/NiSi_2@C复合材料首次充放电容量分别为2754和2235mAh/g,首次库伦效率超过80%,经100次循环后的容量保持为1242mAh/g,显示出良好的电化学性能。     

MSb2型金属间化合物作为锂离子电池负极材料的研究

采用真空悬浮熔炼与高能球磨制备了MSb2(M＝Co和Fe)型合金粉末,利用恒电流电池测试仪研究了其电化学性能。研究发现CoSb2和FeSb2电极的嵌/脱锂平台均在0.8和1.0V左右;在20mA/g电流密度下的首次嵌锂反应的可逆容量为430mAh/g;电流密度为100mA/g条件下,CoSb2首次嵌锂反应的可逆容量为380mAh/g,FeSb2首次嵌锂反应的可逆容量340mAh/g。所以,MSb2型金属锑化物可以作为锂离子电池负极材料的侯选材料。,Sb-based inter-metallic compounds(MSb2) were prepared by levitation melting and milled by high-energy ball-mill.Experiments show that the plateaus of lithium ion insertion and extraction were at about 0.8 and 1.0V. Their reversible capacities are all about 430mAh/g and their cycle lives are almost same during the cycling at the current density of 20mA/g.But at the current density of 100mA/g they both have a little difference in the cycle life.The materials show the superior properties and can be considered as a candidater for the anode materials of lithium ion batteries.     

Si@环化聚丙烯腈/多壁碳纳米管负极复合材料的制备及电化学性能

通过简单高能球磨和高温热解法制备了锂离子电池Si/C电极复合材料,聚丙烯腈（PAN）包覆的纳米颗粒（Si@PAN）与多壁碳纳米管（MWCNTs）混合,制得Si@环化PAN/MWCNTs（Si@c-PAN/MWCNTs）复合材料作为锂离子电池的负极材料。包覆在纳米Si外层的高温热解后的PAN能够有效缓冲Si在充放电过程中巨大的体积变化产生的应力,同时MWCNTs作为Si@c-PAN的基体阻止Si@c-PAN颗粒的团聚,也提高了Si@c-PAN/MWCNTs复合材料电极的导电性能。电化学测试结果表明,Si@c-PAN/MWCNTs复合材料电极在电流密度为0.2 A/g时,其首次放电比容量达到2 098 mA?h/g,库伦效率达到86%;循环50次后Si@c-PAN/MWCNTs复合材料电极的可逆比容量仍能够达到1 278 mA?h/g,在2 A/g放电时其比容量为600 mA?h/g,仍保持良好的循环稳定性。      

石墨烯桥联碳-聚乙二醇包覆的Si纳米颗粒Li离子电池复合负极材料

Si是一种很有前途的Li离子电池负极材料。为解决其巨大体积形变导致的容量衰退快、循环寿命短等问题,采用简单的搅拌和热还原,利用聚乙二醇衍生的薄碳修饰Si纳米颗粒(C-PEG@Si NPs),并通过石墨烯的桥联来制备具有多级包覆结构的石墨烯桥联C-PEG包覆的Si纳米颗粒(graphene@C-PEG@Si NPs)复合材料。利用SEM、 TEM、 X射线衍射、恒流充放电测试等一系列表征测试方法对材料结构、物相和电化学性能进行分析。C-PEG与石墨烯涂层可有效地减小Li离子储存过程中Si对电解质的暴露面积并缓解其体积膨胀。研究结果表明,相比纯Si, graphene@C-PEG@Si NPs复合材料表现出优异的电化学性能,在210 mA/g的电流密度下,经过100次循环可逆比容量仍高达1 032 mA·h/g,电极在4 200 mA/g的大电流密度下循环100次,其比容量仍保持在430 mA·h/g以上。     

MSb2型金属化合物作为锂离子电池负极材料的研究

采用真空悬浮熔炼与高能球磨制了MSb2(M-Co和Fe)型合金粉末,利用恒电流电池测试仪研究了其电化学性能,研究发现CoSb2和FeSb2电极的嵌／脱锂平台在0．8和1．0V左右,在20mA/g电流密度下的首次嵌锂反应的可逆容量为430mAh/g,电流密度为100mA/g条件下,CoSb2首次嵌锂反应的可逆容量为380mAh/g,FeSb2首次嵌锂反应的可塑容量340mAh/g,,所以,MSb2型金属锑化物可以作为锂离子电池极材料的假选材料。     

石墨烯负载金属钌用于锂-空气电池的正极材料

通过溶液法制备钌/石墨烯(Ru/G)复合材料,用作锂-空气电池的正极材料。通过充放电测试、循环伏安(CV)和电化学阻抗(EIS)研究了锂-空气电池的电化学性能。结果表明:Ru/G复合材料作为锂-空气电池的正极材料,明显提高了氧化还原反应的催化活性,改善了电化学反应性能。在电流密度为500mA·g-1时,首次充放电比容量分别为13136mAh·g-1和13578mAh·g-1,充放电的过电位降低了约0.35V。当固定充放电比容量为1000mAh·g-1,采用恒流充放电模式,可稳定循环30次。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.