TiO2/SnOxCly double layer for highly efficient planar perovskite solar cells

Recently, perovskite solar cells have attracted tremendous research interest due to their amazing light to electric power conversion efficiency (PCE). However, most high performance devices usually use mesoporous TiO₂ as the electron transport layer (ETL), which increases cost for practical application. Here, TiO₂/SnO_xCl_y double layer was employed as the ETL for planar perovskite solar cells. Compared with bare TiO₂, perovskite solar cell based on TiO₂/SnO_xCl_y shows drastically improved power conversion efficiency and reduced hysteresis. These improvements are attributed to TiO₂/SnO_xCl_y which could enhance electron extraction and reduce surface trap-state.     

Light-induced enhancement of quantum dot photovoltaic devices with nitrogen doped titanium oxide capping layers

For the first time it is reported that nitrogen-doped titanium oxide with light annealing can improve the device performance by 300% when acting as an interfacial layer between CdSe quantum dot/poly-3-hexylthiophene and the cathode in the photovoltaic devices. Substitutional N doping with a concentration of 1.2 at.% was found by X-ray photoelectron spectroscopy which was responsible for 0.1 eV band gap reduction of TiO_x. Photoluminescence and the external quantum efficiency spectrum confirmed the enhanced charge collection and association rate after light annealing. Three-dimensional atomic force microscopy results agreed with the series resistance measurements, confirming that a good contact was achieved. The topography study also indicated that the active layer morphology changed upon light annealing. Improved stability and longer lifetime were also found with TiO_xN_y capped devices, which were optimized with light annealing. TiO_x capped devices were also evaluated for comparison in this study.     

Performance analysis of dye solar cell with additional TiO2 layer under different light Intensities

Deployment of dye solar cells (DSCs) for building integration application would require a highly efficient solar cell that work well in diffused light. In order to improve the efficiency of dye solar cell, an additional layer of ultrathin anatase titanium dioxide (TiO₂) has been deposited for strengthening the adhesion of the porous TiO₂-based photo electrode to the conductive transparent substrate, which can lead to an enhancement in electron transportation. Fabricated cells of 1 cm² area were tested under different light intensities (100, 33 and 10 mW cm⁻²) and characterized by scanning electron microscopy (SEM), Raman spectroscopy and electrochemical impedance spectroscopy (EIS). Analysis showed an increment in overall quantum conversion efficiency (η), as high as 35% compared to the standard cell without the additional layer of TiO₂. EIS analysis has proven that the additional ultrathin anatase layer has improved the collection efficiency (Φ_COLL) as the result of the enhancement in both electron transport and lifetime within the porous TiO₂ film which translated into better conversion efficiency of DSCs.     

The application of single-layer graphene modified with solution-processed TiOx and PEDOT:PSS as a transparent conductive anode in organic light-emitting diodes

There are many challenges for a direct application of graphene as the electrodes in organic electronics due to its hydrophobic surfaces, low work function (WF) and poor conductance. The authors demonstrate a modified single-layer graphene (SLG) as the anode in organic light-emitting diodes (OLEDs). The SLG, doped with the solution-processed titanium suboxide (TiO_x) and poly(3,4-ethylenedio-xythiophene)/poly(styrene sulfonic acid) (PEDOT:PSS), exhibits excellent optoelectronic characteristics with reduced sheet resistance (R_sq), increased work function, as well as over 92% transmittance in the visible region. It is notable that the R_sq of graphene decreased by ∼86% from 628 Ω/sq to 86 Ω/sq and the WF of graphene increased about 0.82 eV from 4.30 eV to 5.12 eV after a modification by using the TiO_x–PEDOT:PSS double interlayers. In addition, the existence of additional TiO_x and PEDOT:PSS layers offers a good coverage to the PMMA residuals on SLG, which are often introduced during graphene transfer processes. As a result, the electrical shorting due to the PMMA residues in the device can be effectively suppressed. By using the modified SLG as a bottom anode in OLEDs, the device exhibited comparable current efficiency and power efficiency to those of the ITO based reference OLEDs. The approach demonstrated in this work could potentially provide a viable way to fabricate highly efficient and flexible OLEDs based on graphene anode.     

Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility

Solution-processed TiO_x layer was investigated as a candidate for next-generation resistive random access memory (ReRAM) application. TiO_x active layer was prepared by simple spin coating process of a titanium(IV) isopropoxide precursor using sol-gel chemistry. Through the introduction of indium-tin-oxide (ITO) coated glass and polyethersulfone (PES) substrates, tranparent and flexible ReRAM devices were demonstrated, respectively. In addition, using scalable via-hole structure with nano-scale active area, the feasibility for high-density memory application was investigated. All ReRAM devices formed using various substrates exhibited good memory performance, such as stable dc I-V, ac endurance, and retention characteristics during maintaining their own unique functions accomplished by substrate properties.     

Enhancing extracted electroluminescence from light-emitting electrochemical cells by employing high-refractive-index substrates

Solid-state light-emitting electrochemical cells (LECs) show several advantages over conventional organic light-emitting devices (OLEDs) such as simple device structure compatible with solution processes, low operation voltage and capability of utilizing inert cathode metals. However, device performance of LECs must be improved, e.g. enhancing light extraction, to meet the requirements for practical applications. Among the optical modes trapped in LECs, light trapped in substrate mode is easier to be extracted, e.g., by simply roughing the output surface. Therefore, increasing the percentage of substrate mode is beneficial in improving light extraction. In this work, the contributions of optical modes in LECs employing substrates with various refractive indices are analyzed. Higher-refractive-index substrates are shown to trap more light in the substrates. Smaller refractive index difference between higher-refractive-index substrate and indium tin oxide (ITO) layer also increases the cutoff spectral range of light waveguided in ITO layer. Furthermore, light intensity in surface plasmon mode significantly reduces as the refractive index of the substrate increases. Reducing the percentage of surface plasmon mode facilitates light extraction since it requires more complicated methods for outcoupling light in this mode. With commercially available unpolished sapphire substrates, light output of LECs is enhanced by 56%. When a scattering layer was inserted between ITO and sapphire substrate, more light in substrate mode can be extracted and 71% enhancement in light output is realized. High external quantum efficiency up to 5.5% is consequently obtained in LECs based on a ruthenium complex. Such device efficiency is among the highest reported values for red-emitting LECs and thus confirms that utilizing higher-refractive-index substrates would offer a simple and feasible approach to improve light output of LECs. In comparison to OLEDs, increased EL trapped in substrates of LECs mainly comes from surface plasmon mode rather than waveguide mode.     

Corrugated structure through a spin-coating process for enhanced light extraction from organic light-emitting diodes

We have demonstrated a simple fabrication method for an out-coupling structure to enhance light extraction from organic light-emitting diodes (OLEDs). Spin-coating of SiO₂ and TiO_x sol mixture solution develops corrugated film. The structural evolution of the corrugation was explained by the localization of surface tension during the solvent evaporation. The structural parameters of the corrugated structure were characterized by varying the spin-coating speed and the mixing ratio of the solution. Compared to conventional devices, OLEDs with a corrugated structure at the backside of the glass substrate showed increased external quantum efficiency without change in the electroluminescence spectrum. The light extraction enhancement is attributed to the decreased incidence angle at the interface of glass substrate and air.     

Improved performance of perovskite solar cells with a TiO2/MoO3 core/shell nanoparticles doped PEDOT:PSS hole-transporter

We demonstrate improved performance of inverted planar heterojunction CH₃NH₃PbI_3-xCl_x perovskite solar cells with a TiO₂/MoO₃ core/shell nanoparticles (NPs) doped poly(3,4-ethylene dioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) hole-transporting layer (HTL). TiO₂/MoO₃ Core/shell NPs with size of approximately 40 nm are successfully prepared with a simple wet solution method and are interspersed into PEDOT: PSS layer to construct the HTL. The optimized device shows a high power conversion efficiency of 13.63%, which is dramatically improved compared with the reference device with a pristine PEDOT:PSS HTL. The improvement is mainly attributed to the increased crystalline of the CH₃NH₃PbI_3-xCl_x film with large-scale domains and a compact morphology. More interesting, the cells exhibit superior stability in ambient conditions, which is attributed to the inhibited penetration of moisture due to the compact morphology of the CH₃NH₃PbI_3-xCl_x film and the reduced hygroscopicity of the PEDOT:PSS film.     

Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell

Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/WO₃/Ag was employed. For comparison, an identical device using a sol–gel derived TiO_x electron extracting layer was also fabricated. Increased short-circuit density (J_sc) and open-circuit voltage (V_oc) were generated in the devices with ZTO layer in comparison to the ones with TiO_x layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices.     

Enhanced photocatalytic activity of graphene oxide/titania nanosheets composites for methylene blue degradation

In the present work, we report enhanced photocatalytic degradation of methylene blue dye in aqueous solution by using ultra-thin anatase TiO₂ nanosheets (NSs) combined with graphene oxide (GO) as a photocatalyst. The two-dimensional ultra-thin anatase TiO₂ NSs are fabricated via chemical exfoliation. By completely delaminating a lepidocrocite-type layered protonic titanate H_xTi_2−x/4□_x/4O₄·H₂O (x=0.7, □: vacancy) into individual layers through ion exchange with tetrabutylammonium (TBA⁺) cations, well-dispersed ultra-thin colloidal Ti_0.91O₂ NSs with a lateral size up to a few micrometers are obtained. Subsequent acid treatment induces colloidal Ti_0.91O₂ to reassemble and precipitate into a gelation form, followed by thermal annealing to convert the Ti_0.91O₂ gelation into anatase TiO₂ nanosheets as photocatalyst for methylene blue degradation. TiO₂ NSs show a high photocatalytic degradation efficiency of 53.2% due to the ultra-thin thickness for facile electron transfering and large surface area for methylene blue absorption. Moreover, photocatalytic effect can be further improved by simply adding GO suspension to achieve colloidal self-assembly of GO and TiO₂ NSs. An optimal GO content of 3 wt% further increases the photocatalytic degradation efficiency to 91.2% due to faster electron–hole seperation and improved surface area provided by GO. This work provides a simple but effective approach by combing graphene oxide with TiO₂ nanosheets synthesized via the exfoliation method for methylene blue degradation.     

Impact of insertion of ultrathin TaOx layer at the Pt/TiO2 interface on resistive switching characteristics

A TaO_x layer as thin as ∼1 nm was inserted at the interface between top Pt electrode and TiO₂ as a restive switching dielectric to find a clue for a control of the resistive switching characteristics. By inserting an ultrathin TaO_x layer, a marked change in initial resistance state and an improvement of endurance property were observed. These results can be interpreted in terms that such an ultrathin TaO_x layer works as an oxygen reservoir.     

High-k TixSi1−xO2 thin films prepared by co-sputtering method

We report on high-k Ti_xSi_1−xO₂ thin films prepared by RF magnetron co-sputtering using TiO₂ and SiO₂ targets at room temperature. The Ti_xSi_1−xO₂ thin films exhibited an amorphous structure with nanocrystalline grains of 3-30 nm having no interfacial layers. The XPS analyses indicate that stoichiometric TiO₂ phases in the Ti_xSi_1−xO₂ films increased due to stronger Ti-O bond with increasing TiO₂ RF powers. In addition, the electrical properties of the Ti_xSi_1−xO₂ films became better with increasing TiO₂ RF powers, from which the maximum value of the dielectric constant was estimated to be ∼30 for the samples with TiO₂ RF powers of 200 and 250 W. The transmittance of the Ti_xSi_1−xO₂ films was above 95% with optical bandgap energies of 4.1-4.2 eV. These results demonstrate a potential that the Ti_xSi_1−xO₂ thin films were applied to a high-k gate dielectric in transparent thin film transistors as well as metal-oxide-semiconductor field-effect transistors.     

Control of strain relaxation behavior of Ge1−xSnx buffer layers

We have investigated how to realize a strain-relaxed Ge_1−xSn_x layer with large in-plane lattice constant as a buffer layer for a tensile-strained Ge layer. This paper reports the dependence of strain relaxation behavior in Ge_1−xSn_x layers on the misfit strain at the interface between Ge_1−xSn_x layers and substrates. We examined control of the misfit strain by growth of Ge_1−xSn_x layers on bulk-Si and virtual Ge substrates. Large misfit strain between the Ge_1−xSn_x layer and the Si substrate leads to strain relaxation during growth and high degree of strain relaxation after annealing. However, it also leads to interfacial mixing and surface roughening with annealing. As a result, the Ge_1−xSn_x layer having a Sn content of 9.2% was achieved, and it has a potential to induce a tensile strain of 0.99% in Ge layer.     

Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide

The effect of the active region thickness on the basic characteristics of high-power semiconductor lasers based on AlGaAs/GaAs/InGaAs asymmetric separate-confinement heterostructures grown by MOCVD epitaxy has been studied. It is shown that the threshold current, temperature sensitivity of the threshold current density, internal quantum efficiency of stimulated emission, and differential quantum efficiency are improved as the active region thickness increases. It is demonstrated that the maximum attainable optical emission power of a semiconductor laser and the internal quantum efficiency of photoluminescence are the most sensitive to defect formation in the heterostructure and become lower as the critical thickness of the strained In_xGa_1–x As layer in the active region is exceeded.     

Enhanced efficiency and stability of polymer solar cells with TiO2 nanoparticles buffer layer

TiO₂ sols synthesized with a facile solution-based method were used as a buffer layer between the active layer and the cathode Al in conventional structure polymer solar cells (PSCs). Using transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD) and atomic force microscopy (AFM), the morphological and crystallographic properties of synthesized TiO₂ nanoparticles (TiO₂ NPs) as well as the buffer layer were studied in detail. It was observed that by increasing H₂O in the process of peptization both the crystallinity and particle size of TiO₂ NPs were enhanced, while the particles in sol showed a narrower size distribution conformed by dynamic light scattering. Inserting TiO₂ NPs as a buffer layer in conventional structure PSCs, both the power conversion efficiency (PCE) and stability were improved dramatically. PSCs based on the structure of ITO/PEDOT:PSS/P3HT:PCBM/TiO₂ NPs/Al showed the short-circuit current (J_sc) of 12.83 mA/cm² and the PCE of 4.24%, which were improved by 31% and 37%, respectively comparing with the reference devices without a TiO₂ buffer layer. The stability measurement showed that PSC devices with a TiO₂ NPs buffer layer could retain 80% of the original PCEs after exposed in air for 200 h, much better than the devices without such a buffer layer. The effect can be attributed to the protection by the buffer layer against oxygen and H₂O diffusion into the active layers. The observations indicate that TiO₂ NPs synthesized by facile solution-based method have great potential applications in PSCs, especially for large-area printed PSCs.     

Enhancing extraction efficiency from GaN-based LED by using an omni-directional reflector and photonic crystal

To enhance the light extraction efficiency of traditional light-emitting diodes（LEDs） by reducing the total internal reflection,an omni-directional reflector（ODR） and photonic crystal are adopted in the paper.The structures of photonic crystal and the ODR are designed by diffraction theory and finite difference time domain（FDTD） method.The photonic crystal is employed in the p-GaN layer and the ODR composed of TiO2/SiO2 is designed between the active region and substrate.The simulation results indicate that the light extraction of LEDs can be enhanced by 11.6 times,and the external quantum efficiency of LEDs will be effectively improved.     

Evidence for Chemicals Intermingling at Silicon/Titanium Oxide (TiOx) Interface and Existence of Multiple Bonding States in Monolithic TiOx

Metal oxides (MOs) are used in photovoltaics and microelectronics as surface passivating layers and gate dielectrics, respectively. The effectiveness of MOs predominantly depends on their structure and the nature of the semiconductor/MO (S/MO) interface. While some efforts are made to analyze interface behavior of a few MOs, greater fundamental understanding on the interface and structural behaviors of emerging MOs is yet to be established for enhanced scientific and technological developments. Here, the structure of atomic layer deposited titanium oxide (TiO_x) and the nature of the c‐Si/TiO_x interface on the atomic‐ to nanoscale are probed. A new breed of mixed oxide (SiO_x+TiO_x) interfacial layer with a thickness of ≈1.3 nm at the c‐Si/TiO_x interface is discovered, and its thickness further increases to ≈1.5 nm after postdeposition annealing. It is observed that both as‐deposited and annealed monolithic TiO_x films comprise multiple bonding states at varying film thickness, with an oxygen‐deficient TiO_x layer located close to the mixed oxide/TiO_x interface. The stoichiometry of this layer improves when reaching the middle and near surface regions of the TiO_x layer, respectively. This work uncovers several critical structural and interface aspects of TiO_x, and thus creates opportunities to control and design improved photovoltaic and electronic devices for future development.     

The optimum growth composition for GaAs1−xPx LEDs from a high pressure experiment

GaAs_1?xP_x light emitting diodes with x = 0.37 and x = 0.387 have been pressurised to 9 kbar at 295 K. Observation of the pressure shift and intensity of the emission peak provide a method of separating the band-structure and disorder mechanisms which cause the efficiency to decrease for$\text{x ?0.38}$. Results show that if band structure effects are taken as the limiting factor in diode efficiency then the optimum growth composition is x = 0.41. Results are compared with previous determinations of this value. It is concluded that lattice imperfection/strain effects caused by the addition of P contribute significantly to the decrease in efficiency for x > 0.30.     

Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics

The effect of structural parameters on the transport characteristics from 15 to 300 K of molecular beam epitaxy-grown InGaAs/InAlAs two dimensional electron gas structures lattice-matched to InP is determined. The InAlAs buffer layer thickness was varied from 1000 to 10,000Å. One sample also incorporated a InGaAs/InAlAs superlattice. The buffer layer thickness and structure had almost no effect on the mobility or sheet density. The InAlAs spacer layer was varied from 25 to 200Å. Increases in the InAlAs spacer thickness resulted in a monotonically decreasing sheet density and a peak in the mobility versus spacer thickness at 100Å. The highest 77 K mobility was 66,700 cm²/V/sds withN _D =1.2×10¹² cm^?2. The effect of illumination and temperature on the sheet concentration in these structures as well as on “bulk” InAlAs:Si was much smaller than in Al _x Ga_1?x As/GaAs structures or “bulk” Al _x Ga_1?x As, forx?0.30, indicating that devices based on this material system will not be characterized by many of the device instabilities observed in the AlGaAs/GaAs system.     

Effect of annealing-induced oxidation of molybdenum oxide on organic photovoltaic device performance

Molybdenum oxide (MoO_x) has been widely used as a hole transport layer in organic photovoltaic cells (OPVs), whose performance can be improved by inserting a MoO_x layer between an organic active layer and a transparent anode because of efficient carrier dissociation. In this study, the influence of thermally annealed MoO_x on the photovoltaic performance of OPVs was first investigated using low-bandgap polymer and [6,6]-phenyl C₇₁-butyric acid methyl ester (PC₇₁BM) blend films as the active layer. We used three low-bandgap polymers: poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT), poly(4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl) (PTB7), and poly([2,6′-4,8-di(5-ethylhexylthienyl)benzo[1,2-b,3,3-b]dithiophene]3-fluoro-2[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl) (PTB7-Th). Power conversion efficiencies were drastically increased for all investigated polymers when the as-deposited MoO_x layer was annealed at 160 °C for 5 min. In particular, a high efficiency of 6.57% was achieved when PTB7 was used; for comparison, the efficiency of a reference device with an as-deposited MoO_x layer (not subjected to annealing) was 1.40%. Specifically, the short-circuit current density and fill factor were remarkably improved after annealing, which means that efficient carrier dissociation was achieved in the active layer. We evaluated optical absorption and surface morphology to elucidate reasons behind the improved photovoltaic performance, and these parameters only slightly changed after annealing. In contrast, angle-dependent X-ray photoelectron spectroscopy revealed that the MoO_x layer was oxidized after annealing. In general, the oxygen vacancies of MoO_x act as carrier traps; a reduction in the number of carrier traps causes high hole mobility in the organic layer, which, in turn, results in an improved photovoltaic performance. Therefore, our results indicate that the annealing-induced oxidation of MoO_x is useful for achieving high photovoltaic performance.