Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 10¹², 5 × 10¹³ and 1 × 10¹⁴ cm⁻². Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation.I–V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.     

Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology

Zirconium silicide was synthesized on Si (100)/zirconium interface by means of swiftly moving 150 MeV Au ion beam. Thin films of zirconium (~60 nm) were deposited on Si (100) substrates in ultra high vacuum conditions using the electron-beam evaporation technique. The system was exposed to different ion fluencies ranging from 3 × 10¹³ to 1 × 10¹⁴ ions/cm² at room temperature. Synthesized zirconium silicide thin film reasonably affects the resistivity of the irradiated system and for highest fluence of 1 × 10¹⁴ ions/cm² resistivity value reduces from 84.3 to 36 μΩ cm. A low resistivity silicide phase, C-49 ZrSi₂ was confirmed by X-ray analysis. Schottky barrier height was calculated from I–V measurements and the values drops down to 0.58 eV after irradiation at 1 × 10¹⁴ ions/cm². The surface and interface morphologies of zirconium silicide were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM shows a considerable change in the surface structure and SEM shows the ZrSi₂ agglomeration and formation of Si-rich silicide islands.     

Characterization of Tin disulphide thin films prepared at different substrate temperature using spray pyrolysis technique

Thin films of tin disulphide on glass substrates were prepared by spray pyrolysis technique using precursor solutions of SnCl₂·2H₂O and n–n dimethyl thiourea at different substrate temperatures varied in the range 348–423 K. Using the hot probe technique the type of conductivity is found to be n type. X ray diffraction analysis revealed the polycrystalline nature with increasing crystallinity with respect to substrate temperature. The preferential orientation growth of SnS₂ compound having hexagonal structure along (002) plane increased with the substrate temperature. The size of the tin disulphide crystallites with nano dimension were determined using the Full Width Half Maximum values of the Bragg peaks and found to increase with the substrate temperature. The surface morphology had been observed on the surface of these films using scanning electron microscope. The optical absorption and transmittance spectra have been recorded for these films in the wavelength range 400–800 nm. Thickness of these films was found using surface roughness profilometer. The absorption coefficient (α) was determined for all the films. Direct band gap values were found to exist in all the films deposited at different substrate temperatures. The value of room temperature resistivity in dark decreased from 5.95 × 10³ Ω cm for the amorphous film deposited at low temperature (348 K) to 2.22 × 10³ Ω cm for the polycrystalline film deposited at high temperature (423 K) whereas the resistivity values in light decreased from 1.48 × 10³ to 0.55 × 10³ Ω cm respectively, which is determined using the four probe method. Activation energy of these thin films was determined by Arrhenius plot.     

Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method

A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared films have uniform thickness varying from 200–600 nm and good adherence to the glass substrate. A systematic study has been made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The resistivity, sheet resistance, carrier concentration and mobility values varied from 1·56–5·72×10⁻³ Ω-cm, 128–189 Ω/□, 1·6–3·9×10²¹ cm⁻³ and 0·3–3 cm²/Vs, respectively for varying film thicknesses. A systematic increase in mobility with grain size clearly indicates the reduction of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission data, the band gap was estimated and found to vary from 2·20–2·42 eV. These films have transmittance around 77% and average reflectance is below 2·6% in the spectral range 350–850 nm. The films aren-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain boundary formation at a substrate temperature as low as 523 K.     

Preparation and characterization of indium oxide (In2O3) films by activated reactive evaporation

The electrical and optical properties of In₂O₃ films prepared at room temperature by activated reactive evaporation have been studied. Hall effect measurements at room temperature show that the films have a relatively high mobility 15 cm²v⁻¹s⁻¹, high carrier concentration 2·97 × 10²⁰/cm³, with a low resistivityρ = 1·35 × 10⁻³ ohm cm. As-prepared film is polycrystalline. It shows both direct and indirect allowed transitions with band gaps of 3·52eV and 2·94eV respectively.     

Ar+ ion beam induced silicide formation mechanism at the Pd-Si interface

Evaporated palladium films of 45 nm thickness on Si(1 1 1) were irradiated using 78 keV Ar⁺ ions with doses in the range of 1×10¹⁵ to 1.5×10¹⁶ cm^–2 for the purpose of studying silicide formation. Rutherford backscattering analysis shows that intermixing has occurred across the Pd-Si interface at room temperature. The mixing behaviour increases with increasing dose of the bombarding ions, which agrees well with a theoretical model of isotropic cascade mixing for palladium, and radiation-enhanced diffusion associated with an interstitial mechanism for silicon.     

Swift heavy ion irradiation effect on Cu-doped CdS nanocrystals embedded in PMMA

Semiconductor nanocrystals (NCs) have received much interest for their optical and electronic properties. When these NCs dispersed in polymer matrix, brightness of the light emission is enhanced due to their quantum dot size. The CdCuS NCs have been synthesized by chemical route method and then dispersed in PMMA matrix. These nanocomposite polymer films were irradiated by swift heavy ion (SHI) (100 MeV, Si⁺⁷ ions beam) at different fluences of 1 × 10¹⁰ and 1 × 10¹² ions/cm² and then compared their structural and optical properties by XRD, atomic force microscopy, photoluminescence, and UV-Vis spectroscopy before and after irradiation. The XRD spectra showed a broad hump around 2θ ≈ 11·83° due to amorphous PMMA and other peaks corresponding to hexagonal structure of CdS nanocrystals in PMMA matrix. The photoluminescence spectra shows a broad peak at 530 nm corresponding to green emission due to Cu impurities in CdS. The UV-Vis measurement showed red shift in optical absorption and bandgap changed from 4·38–3·60 eV as the irradiation fluency increased with respect to pristine CdCuS nanocomposite polymer film.     

Preparation and characterization of Pb1−x Sn x Te pseudobinary alloy semiconductors

Ap-type pseudo-binary alloy semiconductor, Pb_0·3Sn_0·7Te, has been prepared fromp-type specimens of PbTe and SnTe and lattice constants determined with an accuracy of 0.0001 nm. Vacuum annealing of Pb_0·3Sn_0·7 Te reveals two new x-ray powder diffraction lines bearing indices (444) and (800), while others become more sharp, CuK_a-doublets get clearly resolved and the lattice constant is increased by ∼ 0·0002 nm. Slight deviation from Vegard’s law linearity is observed showing that the sample must be considered as ternary in nature. Thin films deposited on mica and glass substrates kept at room temperature are found to have a little higher SnTe content. The effective carrier concentration calculated from Hall measurements at room temperature is ∼ 3·4×10²⁶ m⁻³.     

Barrier characteristics of Pt/Ru Schottky contacts on <Emphasis Type="Italic">n</Emphasis>-type GaN based on <Emphasis Type="Italic">I–V–T</Emphasis> and <Emphasis Type="Italic">C–V–T</Emphasis> measurements

We have investigated the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Ru/Pt/n-GaN Schottky diodes in the temperature range 100–420 K. The calculated values of barrier height and ideality factor for the Ru/Pt/n-GaN Schottky diode are 0·73 eV and 1·4 at 420 K, 0·18 eV and 4·2 at 100 K, respectively. The zero-bias barrier height (Φ_b0) calculated from I–V characteristics is found to be increased and the ideality factor (n) decreased with increasing temperature. Such a behaviour of Φ_b0 and n is attributed to Schottky barrier (SB) inhomogeneities by assuming a Gaussian distribution (GD) of barrier heights (BHs) at the metal/semiconductor interface. The current–voltage–temperature (I–V–T) characteristics of the Ru/Pt/n-GaN Schottky diode have shown a double Gaussian distribution having mean barrier heights ( [`(F)]<sub>\textb0</sub> {\bar{{\Phi}}_{\text{b}0}} ) of 1·001 eV and 0·4701 eV and standard deviations (σ <sub>0</sub>) of 0·1491 V and 0·0708 V, respectively. The modified ln (J<sub>0</sub> /T<sup>2</sup> )-( q<sup>2</sup>s <sub>0</sub><sup>2</sup>/2k<sup>2</sup>T<sup>2</sup> ){ln} ({{J}_{0} /{T}^{2}} )-( {{q}^{2}{\sigma} _{0}^{2}/{2}{k}^{2}{T}^{2}} ) vs 10<sup>3</sup>/T plot gives [`(F)]_\textb0 \bar{{\Phi}}_{\text{b}0} and Richardson constant values as 0·99 eV and 0·47 eV, and 27·83 and 10·29 A/cm²K², respectively without using the temperature coefficient of the barrier height. The difference between the apparent barrier heights (BHs) evaluated from the I–V and C–V methods has been attributed to the existence of Schottky barrier height inhomogeneities.     

AC impedance and dielectric spectroscopic studies of Mg<Superscript>2 + </Superscript> ion conducting PVA–PEG blended polymer electrolytes

Polyvinyl alcohol (PVA)–polyethylene glycol (PEG) based solid polymer blend electrolytes with magnesium nitrate have been prepared by the solution cast technique. Impedance spectroscopic technique has been used, to characterize these polymer electrolytes. Complex impedance analysis was used to calculate bulk resistance of the polymer electrolytes. The a.c.-impedance data reveal that the ionic conductivity of PVA–PEG–Mg(NO₃)₂ system is changed with the concentration of magnesium nitrate, maximum conductivity of 9·63 × 10^− 5 S/cm at room temperature was observed for the system of PVA–PEG–Mg(NO₃)₂ (35–35–30). However, ionic conductivity of the above system increased with the increase of temperature, and the highest conductivity of 1·71 × 10^− 3 S/cm was observed at 100°C. The effect of ionic conductivity of polymer blend electrolytes was measured by varying the temperature ranging from 303 to 373 K. The variation of imaginary and real parts of dielectric constant with frequency was studied.     

Ferromagnetic Resonance and Hall Effect Characterization of GaMnSb Layers

The electrical and magnetic properties of GaSb:Mn layers deposited on (100)GaAs substrates from a laser plasma in vacuum have been studied. It is shown that the films deposited at 200–440 °C are mosaic single crystalline and epitaxial to the substrate, with p-type conduction. Manganese-doped layers had a hole concentration higher than 1×10¹⁹ cm⁻³ and fairly high values of mobility (up to 40 cm²/V s at 300 K). The layers grown at 200 °C exhibited an anomalous Hall effect up to approximately room temperature. On the contrary, a normal Hall effect was observed in the layers grown at 440 °C. Ferromagnetic resonance measurements have revealed the existence of ferromagnetism in the sample grown at 200 °C. The transition temperature is close to room temperature, in full agreement with the Hall data. In the sample grown at 440 °C, the formation of ferromagnetic clusters has tentatively been concluded.     

Preparation of thermoelectric materials based on higher manganese silicide

Rhenium-doped higher manganese silicide based materials have been prepared by hot pressing. It has been shown that the pressing temperature of the materials can be lowered by adding titanium as a reductant or by sonication during pressing. The average thermoelectric figure of merit of the materials in the temperature range 600–900 K is Z ≅ 0.7 × 10⁻³ K⁻¹.     

Mixing induced by swift heavy ion irradiation at Fe/Si interface

The present work deals with the mixing of metal and silicon by swift heavy ions in high-energy range. Threshold value for the defect creation in metal Fe calculated was found to be ∼ 40 keV/nm. A thin film of Fe (10 nm) was deposited on Si (100) at a pressure of 4 × 10⁻⁸ Torr and was irradiated with 95 MeV Au ions. Irradiation was done at RT, to a dose of 10¹³ ions/cm² and 1 pna current. The electronic energy loss was found to be 29.23 keV/nm for 95 MeV Au ions in Fe using TRIM calculation. Compositional analysis of samples was done by Rutherford backscattering spectroscopy. Reflectivity studies were carried out on the pre-annealed and post-annealed samples to study irradiation effects. Grazing incidence X-ray diffraction was done to study the interface. It was observed that ion beam mixing reactions at RT lead to mixing as a result of high electronic excitations.     

Optical and electrical properties of SnO2 films prepared by chemical vapour deposition

Transparent and conducting SnO₂ films are prepared at 500°C on quartz substrates by chemical vapour deposition technique, involving oxidation of SnCl₂. The effect of oxygen gas flow rate on the properties of SnO₂ films is reported. Oxygen with a flow rate from 0·8–1·35 lmin⁻¹ was used as both carrier and oxidizing gas. Electrical and optical properties are studied for 150 nm thick films. The films obtained have a resistivity between 1·72 × 10⁻³ and 4·95 × 10⁻³ ohm cm and the average transmission in the visible region ranges 86–90%. The performance of these films was checked and the maximum figure of merit value of 2·03 × 10⁻³ ohm⁻¹ was obtained with the films deposited at the flow rate of 1·16 lmin⁻¹.     

Thermal Conductivity of a Simulated Fuel with Dissolved Fission Products

The thermal diffusivity of a simulated fuel with fission products forming a solid solution was measured using the laser-flash method in the temperature range from room temperature to 1673 K. The density and the grain size of the simulated fuel with the solid solutions used in the measurement were 10.49 g · cm⁻³ (96.9% of theoretical density) at room temperature and 9.5 μm, respectively. The diameter and thickness of the specimens were 10 and 1 mm, respectively. The thermal diffusivity decreased from 2.108 m² · s⁻¹ at room temperature to 0.626 m² · s⁻¹ at 1673 K. The thermal conductivity was calculated by combining the thermal diffusivity with the specific heat and density. The thermal conductivity of the simulated fuel with the dissolved fission products decreased from 4.973 W · m⁻¹ · K⁻¹ at 300 K to 2.02 W · m⁻¹ · K⁻¹ at 1673 K. The thermal conductivity of the simulated fuel was lower than that of UO₂ by 34.36% at 300 K and by 15.05% at 1673 K. The difference in the thermal conductivity between the simulated fuel and UO₂ was large at room temperature, and decreased with an increase in temperature. Paper presented at the Seventeenth European Conference on Thermophysical Properties, September 5–8, 2005, Bratislava, Slovak Republic.     

Studies on tin oxide films prepared by electron beam evaporation and spray pyrolysis methods

Transparent conducting tin oxide thin films have been prepared by electron beam evaporation and spray pyrolysis methods. Structural, optical and electrical properties were studied under different preparation conditions like substrate temperature, solution flow rate and rate of deposition. Resistivity of undoped evaporated films varied from 2.65 × 10⁻² ω-cm to 3.57 × 10⁻³ ω-cm in the temperature range 150–200°C. For undoped spray pyrolyzed films, the resistivity was observed to be in the range 1.2 × 10⁻¹ to 1.69 × 10⁻² ω-cm in the temperature range 250–370° C. Hall effect measurements indicated that the mobility as well as carrier concentration of evaporated films were greater than that of spray deposited films. The lowest resistivity for antimony doped tin oxide film was found to be 7.74 × 10⁻⁴ ω-cm, which was deposited at 350°C with 0.26 g of SbCl₃ and 4 g of SnCl₄ (SbCl₃/SnCl₄ = 0.065). Evaporated films were found to be amorphous in the temperature range up to 200°C, whereas spray pyrolyzed films prepared at substrate temperature of 300– 370°C were poly crystalline. The morphology of tin oxide films was studied using SEM.     

Dielectric and pyroelectric properties of a composite of ferroelectric ceramic and polyurethane

Flexible piezo- and pyroelectric composite was made in the thin film form by spin coating. Lead Zirconate Titanate (PZT) ceramic powder was dispersed in a castor oil-based polyurethane (PU) matrix, providing a composite with 0–3 connectivity. The dielectric data, measured over a wide range of frequency (10^–5 Hz to 10⁵ Hz), shows a loss peak around 100 Hz related with impurities in the polymer matrix. There is also an evidence of a peak in the range 10^–4 Hz, possibly originating from the glass transition temperature T_g of the polymer. The pyroelectric coefficient at 343 K is 7.0×10^–5 C·m^–2·K^–1 which is higher than that of β-PVDF (1×10^–5 C·m^–2·K^–1). Electronic Publication     

Dielectrical and structural characterization of iron oxide added to hydroxyapatite

In this work we report preparation, structural and dielectric analyses of iron oxide added in hydroxyapatite bioceramic (Ca₁₀(PO₄)₆(OH)₂ — HAP). Hydroxyapatite is the main mineral constituent of teeth and bones with excellent biocompatibility with hard and muscle tissues. The samples were prepared through a calcination procedure associated with dry high-energy ball milling process with different iron concentrations (1, 2·5 and 5 wt%). The dielectric analyses were made measuring the sample impedance in the frequency range 1 kHz–10 MHz, at room temperature. The relative permittivity of the ceramics, at 10 MHz, are between 7·13 ± 0·07 (1 wt%) and 6·20 ± 0·11 (5 wt%) while e ⁿ are between 0·0795 ± 0·008 (1 wt%) and 0·067 ± 0·012 (5 wt%). These characteristics were related to the sample microstructures studied by X-ray diffraction and SEM.     

Hydrogen diffusivity in FeAl

The room temperature diffusivity of hydrogen in a fully B2 ordered iron aluminide of composition Fe-35·8 Al was estimated from the experimental hydrogen depth profile to be 2·38×10⁻¹⁵m²/s. The mathematical procedure utilized for data analysis has been described. The estimated diffusivity is a lower bound value due to surface trapping effects.     

Studies on electrodeposition of corrosion resistant Ni–Fe–Mo alloy

A study to optimize the process parameters for electrodeposition of a Ni–Fe–Mo alloy is reported. A 2²full factorial design was successfully employed for the experimental design analysis of the results. The optimum experimental conditions for producing the corrosion resistant alloy were 120 mA/cm² current density, 20 rpm cathode rotation, 9.0 pH at 30 °C. The alloy was deposited at 61% current efficiency, with an average composition of 62 wt% Ni, 17wt% Fe, 21wt% Mo and traces of boron, and with E _corr −0.506 V, R _p 8.883 × 10³ Ohm cm² and I _corr 6.468 × 10⁻⁷ A/cm². The deposit obtained under these conditions had an amorphous character, good adherence, high corrosion resistance and a nodular morphology. Electrochemical corrosion tests verified that the electrodeposited Ni–Fe–Mo alloy had better corrosion resistance than the Fe–Mo alloy.