Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

Fabrication of high thermal conductivity silicon nitride ceramics by pressureless sintering with MgO and Y2O3 as sintering additives

The fabrication of silicon nitride (Si₃N₄) ceramics with a high thermal conductivity was investigated by pressureless sintering at 1800 °C for 4 h in a nitrogen atmosphere with MgO and Y₂O₃ as sintering additives. The phase compositions, relative densities, microstructures, and thermal conductivities of the obtained Si₃N₄ ceramics were investigated systemically. It was found that at the optimal MgO/Y₂O₃ ratio of 3/6, the relative density and thermal conductivity of the obtained Si₃N₄ ceramic doped with 9 wt% sintering aids reached 98.2% and 71.51 W/(m·K), respectively. EDS element mapping showed the distributions of yttrium, magnesium and oxygen elements. The Si₃N₄ ceramics containing rod-like grains and grain boundaries were fabricated by focused ion beam technique. TEM observations revealed that magnesium existed as an amorphous phase and that yttrium produced a new secondary phase.     

Thermal and mechanical properties of Si3N4 ceramics obtained via two-step sintering

Si₃N₄ ceramics were prepared using novel two-step sintering method by mixing α-Si₃N₄ as raw material with nanoscale Y₂O₃–MgO via Y(NO₃)₃ and Mg(NO₃)₂ solutions. Si₃N₄ composite powders with in situ uniformly distributed Y₂O₃–MgO were obtained through solid–liquid (SL) mixing route. Two-step sintering method consisted of pre-deoxidization at low temperature via volatilization of in situ-formed MgSiO₃ and densification at high temperature. Variations in O, Y, and Mg contents in Si₃N₄–Y₂O₃–MgO during first sintering step are discussed. O and Mg contents decreased with increasing temperature because SiO₂ on Si₃N₄ surface reacted with MgO to form low-melting-point MgSiO₃ compound, which is prone to volatilize at high temperature. By contrast, Y content hardly changed due to high-temperature stability of Y–Si–O–N quaternary compound. In the second sintering step, skeleton body was densified, and the formation of Y₂Si₃O₃N₄ secondary phase occurred simultaneously. Two-step sintered Si₃N₄ ceramics had lower total oxygen content (1.85 wt%) than one-step sintered Si₃N₄ ceramics (2.51 wt%). Therefore, flexural strength (812 MPa), thermal conductivity (92.1 W/m·K), and fracture toughness (7.6 MPa?m^1/2) of Si₃N₄ ceramics prepared via two-step sintering increased by 28.7%, 16.9%, and 31.6%, respectively, compared with those of one-step sintered Si₃N₄ ceramics.     

Effect of MgF2 addition on mechanical properties and thermal conductivity of silicon nitride ceramics

Dense silicon nitride (Si₃N₄) ceramics were prepared using Y₂O₃ and MgF₂ as sintering aids by spark plasma sintering (SPS) at 1650 °C for 5 min and post-sintering annealing at 1900 °C for 4 h. Effects of MgF₂ contents on densification, phase transformation, microstructure, mechanical properties, and thermal conductivity of the Si₃N₄ ceramics before and after heat treatment were investigated. Results indicated that the initial temperature of liquid phase was effectively decreased, whereas phase transformation was improved as increasing the content of MgF₂. For optimized mechanical properties and thermal conductivity of Si₃N₄, optimum value for MgF₂ content existed. Sample with 3 mol.% Y₂O₃ and 2 mol.% MgF₂ obtained optimum flexural strength, fracture toughness and thermal conductivity (857 MPa, 7.4 MPa m^1/2 and 76 W m⁻¹ K⁻¹, respectively). It was observed that excessive MgF₂ reduced the performance of the ceramic, which was caused by the presence of excessive volatiles.     

Microstructure evolution of Si3N4 ceramics with high thermal conductivity by using Y2O3 and MgSiN2 as sintering additives

Silicon nitride (Si₃N₄) ceramics were prepared by gas-pressure sintering using Y₂O₃–MgSiN₂ as a sintering additive. The densification behavior, phase transition, and microstructure evolution were investigated in detail, and the relevance between the microstructure and the performance (including thermal conductivity and mechanical properties) was further discussed. A significant change from a bimodal to a homogeneous microstructure and a decreased grain size occurred with increasing Y₂O₃–MgSiN₂ content. When the small quantity of preformed β-Si₃N₄ nuclei grew preferentially and rapidly in a short time, an obvious bimodal microstructure was obtained in the sample with 4 mol% and 6 mol% Y₂O₃–MgSiN₂. When more β-Si₃N₄ nuclei grew at a relatively rapid rate, the sample with 8 mol% Y₂O₃–MgSiN₂ showed a microstructure consisting of numerous abnormally grown β-Si₃N₄ grains and small grains. When more β-Si₃N₄ nuclei grew simultaneously and slowly, there was a homogeneous microstructure and smaller grains in the sample containing 10 mol% Y₂O₃–MgSiN₂. Benefitting from the completely dense, significant bimodal microstructure, low grain boundary phase, and excellent Si₃N₄–Si₃N₄ contiguity, the sample containing 6 mol% Y₂O₃–MgSiN₂ exhibited great comprehensive performance, with a maximum thermal conductivity and fracture toughness of 84.1 W/(m⋅K) and 8.97 MPa m^1/2, as well as a flexural strength of 880.2 MPa.     

High thermal conductivity silicon nitride ceramics prepared by pressureless sintering with ternary sintering additives

Silicon nitride ceramics were pressureless sintered at low temperature using ternary sintering additives (TiO₂, MgO and Y₂O₃), and the effects of sintering aids on thermal conductivity and mechanical properties were studied. TiO₂–Y₂O₃–MgO sintering additives will react with the surface silica present on the silicon nitride particles to form a low melting temperature liquid phase which allows liquid phase sintering to occur and densification of the Si₃N₄. The highest flexural strength was 791(±20) MPa with 12 wt% additives sintered at 1780°C for 2 hours, comparable to the samples prepared by gas pressure sintering. Fracture toughness of all the specimens was higher than 7.2 MPa·m^1/2 as the sintering temperature was increased to 1810°C. Thermal conductivity was improved by prolonging the dwelling time and adopting the annealing process. The highest thermal conductivity of 74 W/(m∙K) was achieved with 9 wt% sintering additives sintered at 1810°C with 4 hours holding followed by postannealing.     

Effects of YH2 addition on pressureless sintered AlN ceramics

A new type of non-oxide sintering additive of YH₂ was introduced for the fabrication of AlN ceramics with high thermal conductivity and flexural strength. The effects of YH₂ addition (0–5 wt%) on the phase composition, densification, microstructure, thermal conductivity and flexural strength of pressureless sintered AlN ceramics were investigated and compared with those Y₂O₃-added samples (1–5 wt%). The addition of 1 wt% YH₂ led to an in-situ reduction reaction with oxygen impurities, the formation of Y₂O₃ and finally the formation of yttrium aluminate, which in turn improved densification and microstructure. A high flexural strength (408.69 ± 28.23 MPa) was achieved. The addition of 3 wt% YH₂ increased the average grain size and purified the lattice. All these effects are believed to help achieve a high thermal conductivity of 184.82 ± 1.75 W·m^?1·K^?1. Although the thermal conductivity was close to the value of 3 wt% Y₂O₃-added sample, its strength was much increased to 381.53 ± 43.41 MPa. Meanwhile, it demonstrated a good combination of the thermal conductivity and flexural strength than the values reported in some literature. However, further increasing the YH₂ addition to 5 wt% resulted in a high N/O ratio that inhibited the densification behavior of AlN ceramics. The current study showed that AlN ceramics with excellent thermal and mechanical properties could be obtained by the introduction of a suitable YH₂ additive.     

Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives

To improve the thermal conductivity of Si₃N₄ ceramics, elimination of grain-boundary glassy phase by post-sintering heat-treatment was examined. Si₃N₄ ceramics containing SiO₂–MgO–Y₂O₃-additives were sintered at 2123 K for 2 h under a nitrogen gas pressure of 1.0 MPa. After sintering, the SiO₂ and MgO could be eliminated from the ceramics by vaporization during post-sintering heat-treatment at 2223 K for 8 h under a nitrogen gas pressure of 1.0 MPa. Thermal conductivity of 3 mass% SiO₂, 3 mass% MgO and 1 mass% Y₂O₃-added Si₃N₄ ceramics increases from 44 to 89 Wm⁻¹ K⁻¹ by the decrease in glassy phase and lattice oxygen after the heat-treatment. Relatively higher fracture toughness (3.8 MPa m^1/2) and bending strength (675 MPa) with high hardness (19.2 GPa) after the heat-treatment were achieved in this specimen. Effects of heat-treatment on microstructure and chemical composition were also observed, and compared with those of Y₂O₃–SiO₂-added and Y₂O₃–Al₂O₃-added Si₃N₄ ceramics.     

Effect of a new nonoxide additive,Y3Si2C2, on the thermal conductivity and mechanical properties of Si3N4 ceramics

Enhancement of the thermal conductivity of silicon nitride is usually achieved by sacrificing its mechanical properties (bending strength). In this study, β-Si₃N₄ ceramics were prepared using self-synthesized Y₃Si₂C₂ and MgO as sintering additives. It was found that the thermal conductivity of the Si₃N₄ ceramics was remarkably improved without sacrificing their mechanical properties. The microstructure and properties of the Si₃N₄ ceramics were analyzed and compared with those of the Y₂O₃-MgO additives. The addition of Y₃Si₂C₂ eliminated the inherent SiO₂ and introduced nitrogen to increase the N/O ratio of the grain-boundary phase, inducing Si₃N₄ grain growth, increasing Si₃N₄ grain contiguity, and reducing lattice oxygen content in Si₃N₄. Therefore, by replacing Y₂O₃ with Y₃Si₂C₂, the thermal conductivity of the Si₃N₄ ceramics was significantly increased by 31.5% from 85 to 111.8Wm⁻¹K⁻¹, but the bending strength only slightly decreased from 704 ± 63MPa to 669 ± 33MPa.     

ZrSi2–MgO as novel additives for high thermal conductivity of β-Si3N4 ceramics

A novel ZrSi₂–MgO system was used as sintering additive for fabricating high thermal conductivity silicon nitride ceramics by gas pressure sintering at 1900°C for 12 hours. By keeping the total amount of additives at 7 mol% and adjusting the amount of ZrSi₂ in the range of 0-7 mol%, the effect of ZrSi₂ addition on sintering behaviors and thermal conductivity of silicon nitride were investigated. It was found that binary additives ZrSi₂–MgO were effective for the densification of Si₃N₄ ceramics. XRD observations demonstrated that ZrSi₂ reacted with native silica on the Si₃N₄ surface to generate ZrO₂ and β-Si₃N₄ grains. TEM and in situ dilatometry confirmed that the as formed ZrO₂ collaborated with MgO and Si₃N₄ to form Si–Zr–Mg–O–N liquid phase promoting the densification of Si₃N₄. Abnormal grain growth was promoted by in situ generated β-Si₃N₄ grains. Consequently, compared to ZrO₂-doped materials, the addition of ZrSi₂ led to enlarged grains, extremely thin grain boundary film and high contiguity of Si₃N₄–Si₃N₄ grains. Ultimately, the thermal conductivity increased by 34.6% from 84.58 to 113.91 W·(m·K)⁻¹ when ZrO₂ was substituted by ZrSi₂.     

Effects of yttria and magnesia on densification and thermal conductivity of sintered reaction-bonded silicon nitrides

A variety of combinations of Y₂O₃ and MgO were used as additives in preparing Si₃N₄ ceramics by the sintering of reaction-bonded silicon nitride (SRBSN) method. By varying the amount of Y₂O₃ in the range of 0-5 mol% and that of MgO in the range of 0-8 mol%, the effects of Y₂O₃ and MgO additives on nitridation and sintering behaviors as well as thermal conductivity were studied. It was found that appropriate amount and combination of Y₂O₃ and MgO additives were essential for attaining full densification and achieving high thermal conductivity. The sample doped with 2.5 mol% of Y₂O₃ and 5 mol% of MgO attained a thermal conductivity of 128 Wm⁻¹K⁻¹ when sintered at 1900°C for 6 hours, and the sample doped with 2 mol% of Y₂O₃ and 4 mol% of MgO achieved a thermal conductivity of 156 Wm⁻¹K⁻¹ when sintered for 24 hours.     

Enhanced thermal conductivity in Si3N4 ceramic with the addition of Y2Si4N6C

Si₃N₄ ceramic was densified at 1900°C for 12 hours under 1 MPa nitrogen pressure, using MgO and self‐synthesized Y₂Si₄N₆C as sintering aids. The microstructures and thermal conductivity of as‐sintered bulk were systematically investigated, in comparison to the counterpart doped with Y₂O₃‐MgO additives. Y₂Si₄N₆C addition induced a higher nitrogen/oxygen atomic ratio in the secondary phase by introducing nitrogen and promoting the elimination of SiO₂, resulting in enlarged grains, reduced lattice oxygen content, increased Si₃N₄‐Si₃N₄ contiguity and more crystallized intergranular phase in the densified Si₃N₄ specimen. Consequently, the substitution of Y₂O₃ by Y₂Si₄N₆C led to a great increase in ~30.4% in thermal conductivity from 92 to 120 W m^?1 K^?1 for Si₃N₄ ceramic.     

Fabrication of Si3N4 ceramics with high thermal conductivity and flexural strength via novel two-step gas-pressure sintering

Si₃N₄ ceramic substrates serving as heat dissipater and supporting component are required to have excellent thermal and mechanical properties. To prepare Si₃N₄ with desirable properties, a novel two-step gas-pressure sintering route including a pre-sintering step followed by a high-temperature sintering step was devised. The effects of pre-sintering temperature (1500 – 1600 °C) on the phase transformation, microstructure, thermal and mechanical properties of the samples were studied. The pre-sintering temperature played an important role in adjusting the Si₃N₄ particles’ rearrangement and α→β transformation rate. Furthermore, the densification process for the Si₃N₄ ceramics prepared via the two-step gas-pressure sintering was revealed. After sintered at 1525 °C for 3 h followed by a high-temperature sintering at 1850 °C for another 3 h, the prepared Si₃N₄ compact with a bimodal microstructure presented the highest thermal conductivity and flexural strength of 79.42 W·m^?1·K^?1 and 801 MPa, respectively, which holds great application prospects as ceramic substrates.     

Microstructure and thermal conductivity of gas-pressure-sintered Si3N4 ceramic: the effects of Y2O3 additive content

Si₃N₄ ceramics were sintered at 1900 °C under a nitrogen pressure of 1 MPa using Y₂O₃-MgO additives. The effects of Y₂O₃ content (0.5-4 mol%) on microstructure and thermal conductivity were systematically investigated. The increasing Y₂O₃ content led to increases in amount and viscosity of liquid phase during sintering, which induced a “bimodal to normal” transition in distribution of grain size, decreased Si₃N₄/Si₃N₄ contiguity and enhanced devitrification degree of intergranular phase in sintered bulks. Moreover, the decreasing Y₂O₃ content was found to improve the elimination efficiency of SiO₂ impurity during sintering, resulting in lower lattice oxygen content in densified specimens. The microstructure had a strong effect on thermal conductivity. The samples sintered for 3 h gained an increase of thermal conductivity from 65 to 73 W·m^-1 K^-1 with increasing Y₂O₃ content, while the samples sintered for 12 h obtained a substantial increase of thermal conductivity from 87 to 132 W·m^-1 K^-1 with decreasing Y₂O₃ content.     

Fabrication of highly dense Si3N4 via record low-content additive system for low-temperature pressureless sintering

Dense Si₃N₄ ceramics were fabricated by pressureless sintering at a low temperature of 1650°C with a short holding period of 1 h under a nitrogen atmosphere. The role of ternary oxide additives (Y₂O₃–MgO–Al₂O₃, Y₂O₃–MgO–SiO₂, Y₂O₃–MgO–ZrO₂) on the phase, microstructure, and mechanical properties of Si₃N₄ was examined. Only 5 wt.% of Y₂O₃–MgO–Al₂O₃ additive was sufficient to achieve >98% of theoretical density with remarkably high biaxial strength (∼1200 MPa) and prominent hardness (∼15.5 GPa). Among the three additives used, Y₂O₃–MgO–Al₂O₃ displayed the finest grain diameter (0.54 μm), whereas Y₂O₃–MgO–ZrO₂ produced the largest average grain diameter (∼0.95 μm); the influence was seen on their mechanical properties. The low additive content Si₃N₄ system is expected to have superior high-temperature properties compared to the system with high additive content. This study shows a cost-effective fabrication of highly dense Si₃N₄ with excellent mechanical properties.     

Enhanced ionic conductivity and thermal shock resistance of MgO stabilized ZrO2 doped with Y2O3

The present work focused on the effect of Y₂O₃ co-doping on the phase composition, microstructure, ionic conductivity and thermal shock resistance of 8 mol% MgO stabilized ZrO₂ (Mg-PSZ) electrolyte ceramics for high temperature applications. The addition of Y₂O₃ could promote the process of monoclinic-to-cubic/tetragonal phase transformation and became the metastable phase at room temperature. Meanwhile, the grain size of Mg-PSZ decreased. It was demonstrated that an appreciable increase in the ionic conductivity and compressive strength occurred on substituting MgO with Y₂O₃ in the Mg-PSZ electrolyte ceramics across the measured temperature range. Moreover, the Y₂O₃ addition could restrain the adverse effect of the cyclic thermal shock on the ionic conductivity and compressive strength of Mg-PSZ. The main reason was that the increase of the amount of monoclinic phase caused by cubic/tetragonal-to-monoclinic phase transformation by the cyclic thermal shock was restrained after the Y₂O₃ addition.     

Enhanced thermal conductivity and flexural strength of sintered reaction-bonded silicon nitride with addition of (Y0.96Eu0.04)2O3

Sintered reaction-bonded silicon nitride (SRBSN) with high thermal conductivity was obtained using (Y_0.96Eu_0.04)₂O₃ and MgO as sintering additives. Green compacts were nitrided at 1400°C for 4 h. Post-sintering was carried out at 1850 and 1900°C for 4 h, respectively. In reaction-bonded silicon nitride (RBSN) doped with Y₂O₃ and MgO, the β-Si₃N₄ content and nitridation degree were 51.1% and 93.8%, respectively. However, the β-Si₃N₄ content and nitridation degree were 72.6% and 96.7% in a nitrided compact doped with (Y_0.96Eu_0.04)₂O₃ and MgO. After post-sintering, the phase composition, microstructure, mechanical properties, and thermal conductivity were investigated. After sintering at 1900°C for 4 h, the thermal conductivity of SRBSN doped with (Y_0.96Eu_0.04)₂O₃ and MgO was increased by 16.5% compared to that of the samples doped with Y₂O₃ and MgO. The highest hardness of 1639 HV and the good flexural strength of 776.4 MPa were also achieved in the sample doped with 2-mol.% (Y_0.96Eu_0.04)₂O₃ and 5-mol.% MgO.     

Effects of Ho3+ concentration on the fabrication and properties of Ho: Y2O3-MgO nanocomposite for Mid-infrared laser applications

Infrared transparent Ho: Y₂O₃-MgO nanocomposite ceramics with a volume ratio of 50:50 (RE₂O₃: MgO) were prepared by combining sol-gel powder synthesis and hot-pressing sintering techniques. In order to obtain Ho: Y₂O₃-MgO nanocomposite ceramics with fine grain size, dense microstructure and homogeneous phase domains, the effect of sintering temperature and Ho³⁺ doping concentration were studied. Transmittance and SEM measurement revealed that the grain size of 3 at.% Ho: Y₂O₃-MgO ceramic sintered at 1250 °C is 141 nm, and the transmission is up to 85.2% at 5 μm. The detailed spectroscopic investigation of x at.% Ho: Y₂O₃-MgO (x = 1, 3, 5, 7, 9, 15) ceramics was performed. The nanocomposites exhibited photoluminescence properties similar to that of Ho: Y₂O₃ crystals and ceramics. In addition, the thermal conductivity of 3 at.% Ho: Y₂O₃-MgO ceramic is 13.04 W/m·K, which is superior to that of Ho:Y₂O₃ ceramics. The high transmission, excellent thermal conductivity, and outstanding optical characteristics indicated that Ho: Y₂O₃-MgO ceramics is a promising material for efficient infrared solid-state laser.     

Effect of in-situ formed Y2O3 by metal hydride reduction reaction on thermal conductivity of β-Si3N4 ceramics

The effect of YH₂ on densification, microstructure, and thermal conductivity of Si₃N₄ ceramics were investigated by adjusting the amount of YH₂ in the range of 0–4 wt% using a two-step sintering method. Native SiO₂ was eliminated, and Y₂O₃ was in situ formed by a metal hydride reduction reaction, resulting in various Y₂O₃/SiO₂ ratios. Full densification of YH₂-doped samples could be achieved after sintering at 1900 °C for 4 h. The Y₂O₃/SiO₂ ratio had a significant influence on the composition of crystalline secondary phases. Besides, the increased Y₂O₃/SiO₂ ratio is conducive not only to the grain growth but also to the reduction of activity of SiO₂ in the liquid phase, resulting in enlarged purified grains, reduced volume fraction of intergranular phases and increased Si₃N₄-Si₃N₄ contiguity. Ultimately, the thermal conductivity increased by 29 % from 95.3 to 123.0 W m⁻¹ K⁻¹ after sintering at 1900 ℃ for 12 h by the substitution of Y₂O₃ with YH₂.     

Effect of Si addition on the mechanical and thermal properties of sintered reaction bonded silicon nitride

Advanced silicon nitride (Si₃N₄) ceramics were fabricated using a mixture of Si₃N₄ and silicon (Si) powders via conventional processing and sintering method. These Si₃N₄ ceramics with sintering additives of ZrO₂ + Gd₂O₃ + MgO were sintered at 1800 °C and 0.1 MPa in N₂ atmosphere for 2 h. The effects of added Si content on density, phases, microstructure, flexural strength, and thermal conductivity of the sintered Si₃N₄ samples were investigated in this study. The results showed that with the increase of Si content added, the density of the samples decreased from 3.39 g/cm³ to 2.92 g/cm³ except for the sample without initial Si₃N₄ powder addition, while the thermal diffusivity of the samples decreased slightly. This study suggested that addition of Si powder, which varied from 0 to 100%, in the starting materials might provide a promising route to fabricate cost-effective Si₃N₄ ceramics with a good combination of mechanical and thermal properties.