CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

Submicrometer silicon photodiode waveguides, fabricated on silicon-on-insulator substrates, have photoresponse from <1270 to 1740 nm (0.8 AW^-1 at 1550 nm) and a 3-dB bandwidth of 10 to 20 GHz. The p-i-n photodiode waveguide consists of an intrinsic waveguide 500times250 nm where the optical mode is confined and two thin, 50-nm-thick, doped Si wings that extend 5 mum out from either side of the waveguide. The Si wings, which are doped one p-type and the other n-type, make electric contact to the waveguide with minimal effect on the optical mode. The edges of the wings are metalized to increase electrical conductivity. Ion implantation of Si⁺ 1times10 ¹³ cm^-2 at 190 keV into the waveguide increases the optical absorption from 2-3 dBmiddotcm^-1 to 200-100 dBmiddotcm^-1 and causes the generation of a photocurrent when the waveguide is illuminated with subbandgap radiation. The diodes are not damaged by annealing to 450 degC for 15 s or 300 degC for 15 min. The photoresponse and thermal stability is believed due to an oxygen stabilized divacancy complex formed during ion implantation     

Optical waveguides in fluoride lead silicate glasses fabricated by carbon ion implantation

The carbon ion implantation with energy of 4.0 MeV and a dose of 4.0×1014 ions/cm2 is employed for fabricating the optical waveguide in fluoride lead silicate glasses. The optical modes as well as the effective refractive indices are measured by the prism coupling method. The refractive index distribution in the fluoride lead silicate glass waveguide is simulated by the reflectivity calculation method (RCM). The light intensity profile and the energy losses are calculated by the ?nite-difference beam propagation method (FD-BPM) and the program of stopping and range of ions in matter (SRIM), respectively. The propagation properties indicate that the C2+ ion-implanted fluoride lead silicate glass waveguide is a candidate for fabricating optical devices.     

Ion implanted optical waveguides in LiNbO3

The fabrication of low loss single mode integrated optical waveguides by the implantation of He+ ions in LiNbO3 is reported. An assessment is made of the processing requirements in terms of implantation energy, ion dose and annealing parameters. Consideration is also given to the use of multienergy implants as a means of improving isolation between waveguide and substrate. Results on single mode planar waveguides show propagation losses below 1 dB cm?1 for laser light of 632.8 nm wavelength.     

高浓度Er^3＋／Yb^3＋掺杂硅酸盐玻璃波导放大器的增益特性研究

本文分析了高浓度Er^3 /Yb^3 掺杂硅酸盐玻璃波导放大器,通过优化Er^3 、Yb^3 离子的浓度,Er^3 /Er^3 离子对的影响可忽略,每个Er^3 离子可认为只与周围的Yb^3 离子配对。数值结果表明,制作高增益和超短长度（厘米量级）的Er^3 /Yb^3 混合掺杂波导放大器是可能的。获得了2.5dB/cm的增益。     

Low-loss optical stripe waveguides in LiNbO3 formed by He+ implantation

We report the fabrication of low-loss stripe optical wave-guides in LiNbO 3by He+ implantation. At a wavelength of 633 nm the waveguides were found to have a propagation loss as low as l-OdBcm?1, dependent on the make-up of the vertical waveguide walls. These waveguides were also found to exhibit no photorefractive effects.     

用于波导放大器的Er3+/Yb3+共掺磷酸盐玻璃的性能研究

通过优化熔融条件和玻璃组份,成功开发出一种新的Er3+/Yb3+ 共掺磷酸盐玻璃,其在沸水和熔盐中均表现出很好的化学稳定性.通过分析室温下Er3+/Yb3+ 共掺磷酸盐玻璃的吸收光谱,计算得到了Er3+ 离子在波长1533 nm处的峰值发射截面和杜得奥菲而特强度参数;其中Er3+ 离子在波长1533 nm 处的峰值发射截面为0 72×10-20 cm2,大于Schott的IOG1玻璃中Er3+离子的峰值发射截面0 67×10-20 cm2.通过改变离子交换的条件,获得了1 55μm单模光波导的制作条件;制作的波导传输损耗均小于1 dB/cm.初步的离子交换实验表明,Er3+/Yb3+共掺磷酸盐玻璃WM4完全适合波导放大器的制作.     

Optical properties of planar waveguides formed by He+implantation in LiNbO3

The variation in optical properties of He+ -implanted LiNbO3waveguides has been investigated as a function of ion energy and dose for both TE and TM polarizations. Results presented indicate the importance of implant temperature in determining waveguide properties. The effect of aging on optical attenuation is also reported. Although TM (ordinary) mode behavior is determined by the refractive-index profile caused by ion damage, TE-(extraordinary) mode properties are also affected by changes in stoichiometry.     

中红外4 μm波长下MgF2晶体脊形光波导的制备及特性研究（特邀）

为了研究离子与中红外晶体相互作用的机理,探索中红外晶体光波导的制备和性能,采用离子辐照技术结合精密金刚石刀切割,在MgF₂晶体材料中制备了深度17.5 μm、宽度14 μm的脊形光波导。采用SRIM软件模拟了C5+离子辐照MgF₂晶体的电子能量损伤和核能量损伤的过程,分析了波导的形成机理;模拟了波导的折射率变化,并对波导的近场模式进行了实验测量和理论模拟;采用热退火处理来降低波导的传输损耗,将传输损耗降低为0.4 dB/cm;微拉曼光谱证明离子辐照过程并未对MgF₂晶体波导区造成较大的晶格损伤。该工作表明,离子辐照技术结合划片机精密切割是一种十分成熟的脊形波导制备手段,制备的MgF₂晶体脊形光波导在中红外集成光学和光通讯领域具有广泛的应用前景。     

Ridged LiNbO/sub 3/ modulators fabricated by a novel oxygen-ion implant/wet-etch technique

This paper demonstrates a new ion implantation and wet-etch technique for fabricating high-quality ridged optical waveguides for high-speed LiNbO/sub 3/-based optical modulators. In addition, the paper demonstrates the fabrication of optical waveguide ridges >3 /spl mu/m in height with 90/spl deg/, and even re-entrant sidewall angles for the first time. The modeling used indicates that 90/spl deg/ (and re-entrant) sidewall ridges can reduce the required modulator drive voltage by 10-20% over modulators with conventional trapezoidal ridge profiles fabricated with reactive ion etching. A 40-Gb/s modulator with a 30-GHz bandwidth, 5.1-V switching voltage at 1 GHz, and a 4.8-dB optical insertion loss is fabricated using the ion implantation/wet-etch process. Fabricated devices showed good stability against accelerated aging, indicating that this process could be used for commercial purposes.     

多模厚深波导的快速制作与测试

在玻璃基板上用Li~+-Na+离子交换技术快速制作与多模光纤有较高耦合效率的多模厚深波导,并分析了测试结果。     

BF_2~+,F~+ +B~+和Ar~++B~+注入硅快速退火剩余损伤及对浅P~+N结的影响(英文)

The residual damage is analysed by transmission electron microscopy (TEM) for BF2+, F+ + B+ and Ar+ + B+ implanted silicon after rapid thermal annealing(RTA). And the reverse leakage current of the implanted diodes is measured using a FJ-356 electrometer. The results show that 1 ) The residual damage due to BF2+ implantation is less than that of F+ + B + and Ar++ B+ implantation. 2) The reverse leakage current of BF2+ implanted diodes is less than that of F+ + B+ and Ar++ B + implanted diodes. 3) The reverse leakage current of F++B+ and Ar++ B+ implanted diodes increases with the increase of F+ and Ar+ energies, respectively. Therefore the physical behaviour of the interaction between molecular ion and silicon is different from that of the interaction between individual atom ion and silicon.     

Y分支3维光波导横截面折射率分布

为了实现一个表达式同时反映Y分支光波导在纵横两方向上的折射率分布,通过对玻璃结构和离子交换过程进行分析,采用逆向分离变量法提出了基于横向和纵向两个方向折射率分布函数乘积的横截面折射率分布函数,并利用MATLAB软件对优化结果进行了编程模拟。利用Tl+-Na+离子交换法在BK7玻璃基底上制备了Y分支12型3维光波导,利用雅明干涉法对光波导横截面的折射率分布进行了测量。结果表明,利用改折射率分布函数模拟得到的Y分支光波导横截面折射率分布与雅明干涉法实验测得的结果吻合。该改进型折射率分布函数可以对Y分支光波导横截面折射率分布进行模拟,能准确快捷地对Tl+-Na+离子交换Y分支3维光波导横截面折射率分布进行重建。     

A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulators

A novel processing technique has been developed to fabricate planar electroabsorption waveguide modulators in compound semiconductor heterostructures. The lateral confinement of light is achieved by introducing controllable, reproducible, and stable stresses into semiconductor heterostructures using WNi surface stressor stripes, which also serve as electrodes for the waveguide modulators. Self-aligned helium implantation is employed to achieve electrical isolation using the Stressors as the templates for the ion masks. An increase as large as 33000 times has been obtained in the dc resistance between the neighboring waveguide modulators 25 μm apart. Propagation loss of 1.7 dB/cm is observed in the photoelastic waveguides at a wavelength of 1.53 μm following the He implantation. A post-implant thermal annealing at 310°C for 40 min increases the dc resistance between the neighboring devices to the maximum value, and at the same time reduces the optical loss to its value before ion implantation (less than 1 dB/cm). Using a combination of the photoelastic effect and helium implantation, planar InGaAsP/InP Franz-Keldysh-effect waveguide modulators 430 μm long with a 10 dB extinction ratio at 3 V for the TM mode have been fabricated. Planar electroabsorption quantum-confined Stark effect waveguide modulators have also been demonstrated. This planar device processing technique may prove valuable in future photonic integrated circuit technology.     

Depletion edge translation waveguide crossing optical switch

A waveguide crossing optical switch using the depletion edge translation concept is described. By using a single AlGaAs/GaAs material growth and ion implantation technology, an impedance discontinuity is formed at the intersection of two waveguides. Switching operation has been observed, and a high-speed, small-device-size, and high-extinction-ratio optical switch are expected     

氦离子注入掺铈铌酸锶钡晶体平面光波导和它的光折变性质

室温下用2.8MeV氦离子注入在掺铈铌酸锶钡晶体上形成了平面光波导。用棱镜耦合法观察到了波导的暗模。计算的折射率分布表明在离子注入产生的损伤层中晶体的折射率减小，其中正常折射率减小约3．42％，反常折射率减小为2．55％。由PIPR方法拟合的波导中的折射率分布与TRIM’96给出的注入离子的密度分布基本一致。两波耦合实验表明离子注入可以延长折射率光栅的擦除时间。     

Systems evaluation of an Er3+-doped planar waveguideamplifier

We report the output saturation power, excess noise factor, and system performance of a highly concentrated Er³⁺-doped planar optical waveguide amplifier. The performance data demonstrate the potential usefulness of planar optical waveguide amplifiers in system applications     

Wavelength dependent properties of He+implanted optical waveguides in LiNbO3

The effects of wavelength on the attenuation and propagation constant of TE and TM modes in He+ implanted optical waveguides in LiNbO3are presented. It is shown that the TM mode properties are determined by the ion damage profile, while the TE mode properties are considerably influenced by lithium loss which occurs during implantation.     

电场辅助离子交换制备玻璃光波导

使用电场辅助离子交换和热离子交换技术在玻璃基片上制作了平板波导。实验结果表明,这两种方法制作的波导的有效折射率分布不同,电场辅助离子交换技术制作的波导有效折射率呈近似阶跃型分布,而热离子交换制作的波导有效折射率分布为渐变型。经数值计算发现,近似阶跃型折射率分布的波导对光场限制得更好,更适用于制作有源光器件和集成光器件。     

F+离子注入BaF2薄膜的光学性质

本文报导了F+离子注入对BaF2薄膜的光学性质的影响,实验观察到了离子注入引起的薄膜的透过率谱的变化,在一定温度下退火可以使这种变化消除。