一种0.18μm CMOS毫米波带通滤波器的设计

基于SMIC 0.18μm RF-CMOS工艺,设计了一种采用垂直地平面共面波导(VGPCPW)传输线的片上30 GHz带通滤波器。通过对传统CPW和VGP CPW两种不同结构传输线的理论研究,对比分析了两者的损耗、特征阻抗及隔离特性,建立了VGP CPW长度可扩展的传输线模型。使用特征阻抗为50Ω的低损耗VGP CPW传输线结构,结合VGP CPW长度可扩展模型与EM分析方法,设计了30 GHz带通滤波器。在片测试结果表明,该毫米波VGP CPW传输线滤波器模型仿真和电磁场仿真S参数曲线与测试结果比较吻合,可为毫米波集成电路滤波器设计提供借鉴。     

空心硅通孔的设计及其传输性能

硅通孔(TSV)能够实现信号的垂直传输,是微系统三维集成中的关键技术,在微波毫米波领域,硅通孔的高频传输特性成为研究的重点。针对微系统三维集成中,无源集成的硅基转接板的空心TSV垂直传输结构低损耗的传输要求,进行硅通孔的互连设计和传输性能分析。采用传输线校准方式,首先在硅基转接板上设计TSV阵列接地的共面波导(CPW)传输线和带TSV过孔的传输结构,并分别进行仿真分析,计算得出带TSV过孔的传输结构的插入损耗;然后通过后道TSV工艺,在硅基转接板上制作传输线和带TSV过孔的传输结构,用矢量网络分析仪法测试传输线和带TSV过孔的传输结构的插入损耗;最后计算得到单个TSV过孔的插入损耗,结果显示在0.1～30 GHz频段内其插入损耗S21≤0.1 dB,实现了基于TSV的低损耗信号传输。     

MMIC在片测试探头的研究与设计

微波单片集成电路（MMIC）在片测试技术是应用于MMIC和高速集成电路研究、生产的新型测试技术。MMIC在片测试探头是MMIC在片测试系统的关键部件。本文研究并设计了介质基片共面波导（CPW）探头,测试并分析了探头性能。该探头在2－18GHz范围内插入损耗小于1．5dB,回波损耗大于16dB。     

（英）钡铁氧体薄膜自偏置毫米波环行器设计与制备

基于厚度为10 μm的钡铁氧体薄膜设计,制备了共面波导结构的毫米波薄膜环行器.这种薄膜环行器不需要外加磁体,在34 GHz和37.6 GHz显示出环行特性,其非互易效应大于15 dB.结果表明,采用共面波导结构可以实现薄膜环行器.这种薄膜环行器具有和单片微波集成电路集成的潜在应用.     

太赫兹平面肖特基二极管参数模型

根据太赫兹平面肖特基二极管物理结构,在理想二极管SPICE参数模型的基础上建立了二极管小信号等效电路模型。依据该二极管等效电路模型设计了基于共面波导（CPW）去嵌方法的二极管S参数在片测试结构,并对其在0.1~50 GHz、75~110 GHz频率范围内进行了高频小信号测试,利用测试结果提取了高频下二极管电路模型中各部分电容、电阻以及电感参数。将相应的高频下电容与电阻参数分别与低频经验公式电容值和直流I-V测试提取的电阻值进行了对比,并利用仿真手段对高频参数模型进行了验证。完整的参数模型以及测试手段相较于理想二极管SPICE模型和传统的参数提取方法可以更为准确地表征器件在高频下的工作状态。该建模思路可用于太赫兹频段非线性电路的优化设计。     

机不可失 时不再来

微波毫米波单片集成电路(MIMIC)淘汰波导同轴电路的时代正在开始,90年代犹如60年代硅IC代替分立器件那样,在微波毫米波领域内,MIMIC将使整机系统发生重大的技术变革,并将出现许多新的微波毫米波系统。     

亚太赫兹频段介电性能的共面波导测量

利用共面波导的S参数建立了一种计算亚太赫兹频率下材料介电常数实部和虚部的模型,并给出了该模型的详细推导过程和应用实例。基于该模型,利用测试得到的共面波导的S参数计算了200 GHz下衬底材料的介电常数,计算值与理论结果相符。建立的模型可广泛应用于各类材料在亚太赫兹频段介电性能的表征。     

65纳米硅衬底上低损耗带屏蔽的共面波导传输线建模

共面波导传输线可以用作毫米波频段片上的高品质因子的无源器件。在这篇文章里,采用CMOS 65nm工艺设计和制造了加地线屏蔽和不加地线屏蔽的共面波导传输线。本文提出一个基于物理的模型来描述传输线单位长度的频率相关的电感、电容、电阻和电导参数。从基本的共面波导结构出发,模型里加入了慢波效应和底线屏蔽效应的影响。实验数据表明模型有很高的准确度。     

BST铁电薄膜高频特性的仿真分析研究

通过微波软件建模和理论分析方法来分析BST铁电薄膜材料在微波集成电路中的应用,旨在指导器件设计。借助microwave office和Ansoft HFSS&Q3D两个商业软件,构造微带传输线,共面波导传输线,微带低通滤波器和信号串扰等模型,并分析了加入钛酸锶钡(简称BST)薄膜前后各种模型的散射参数(S参数)和群延时。随后,在SiO_2和BST间加入过渡层(LNO,MgO),模拟分析微波元件参数的变化。同时还仿真分析了不同硅衬底厚度和不同BST薄膜厚度情况下的能量延时和S参数。结果表明,由于BST铁电薄膜的高介电常数特性,使得这层薄膜附近的信号线上会产生强烈的信号串扰。最后以共面波导传输线为示例,利用表面微细加工技术制备了共面波导传输线,并利用网络分析仪测试其传输性能,实际测试结果与仿真趋势一致。     

基于CMOS工艺毫米波宽带片上天线

设计了一种基于0.18μm互补金属氧化物半导体（Complementary Metal Oxide Semiconductor, CMOS）工艺的94GHz频段宽带片上天线。该天线采用改进的单极子天线形式,以实现较宽的阻抗带宽。天线馈电形式采用共面集成波导（CPW）馈电结构,该结构便于毫米波天线探针台测试系统测试。此外,通过采用全波仿真软件HFSS,对天线衬底尺寸对天线阻抗和辐射性能的影响进行对比分析。所设计的天线工作频带（|S11|≤-10dB）为74~117.6GHz,94GHz频点处的增益为1.35dBi。该天线具有工作频带宽、辐射性能好等特性,可实现天线与IC芯片的一体化片上集成,满足宽带无线通信系统或毫米波雷达系统高集成度、小型化的应用需要。     

Unsymmetrical broadside-coupled coplanar waveguides for loose-and tight-coupling mic and mmic applications

New broadside-coupled coplanar waveguides (CPW) having a completely asymmetrical structure, suitable for hybrid and monolithic microwave and millimeter-wave integrated circuits requiring broad bandwidths as well as loose and tight couplings, is proposed and examined for the first time. The results of the inivestigation, performed based on the spectral-domain analysis, demonstrate the versatility of the asymmetrical broadside-coupled CPW as compared to its symmetrical counterpart.     

A measurement-based design equation for the attenuation ofMMIC-compatible coplanar waveguides

Measured attenuation of coplanar waveguide (CPW) transmission lines with narrow strip and slot widths fabricated on GaAs, high-resistivity Si, and InP is used to derive a new closed form equation to calculate line losses. This new equation is shown to be more accurate than previous expressions, yet simple enough to be programmed into a hand-held calculator since it is based on a simple relationship between attenuation and the product of the strip and slot widths. The derived equation is applicable to CPW's with aspect ratio and metal thicknesses commonly used in monolithic microwave integrated circuits     

Fast and accurate analytic formulas for calculating the parametersof a general broadside-coupled coplanar waveguide for (M)MICapplications

Fast and accurate analytic formulas for calculating the quasistatic transverse electromagnetic (TEM) parameters of a general broadside-coupled coplanar waveguide (GBSC CPW) are presented. Simplicity, high speed of computation, and accuracy suggest the use of these formulas for (M)MIC CAD (monolithic) microwave integrated circuit computer-aided design programs. Numerical calculations are presented to investigate various electrical properties of the structure. An asymmetrical BSC CPW and the single CPW resulting from connecting the two coupled strips of the GBSC CPW at the input and the output ports are analyzed. Criteria are obtained to ensure the coplanar behavior of the structure     

A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology

This investigation explores a low-noise amplifier (LNA) with a coplanar waveguide (CPW) structure, in which a two-stage amplifier is associated with a cascade schematic circuit, implemented in 0.15-μm GaAs pseudo-morphic high electron mobility transistor (pHEMT) technology in a Ka-band (26.5-40.0 GHz) microwave monolithic integrated circuit (MMIC). The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz, when biased at a V_(ds) of 2 V and a V_(gs) of-0.6 V with a drain current of 16 mA in the circuit. The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit. Finally, the overall LNA characterization exhibits high gain and low noise, indicating that the LNA has a compact circuit and favorable RF characteristics. The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.     

Finite ground coplanar waveguide (FGC) low loss, low coupling 90-degree crossover junctions

Microwave and millimeter-wave integrated circuits and RF distribution networks often require two transmission lines to cross over each other. In this paper, experimental measurements and three-dimensional (3-D) finite difference time domain analysis are used to thoroughly characterize coplanar waveguide (CPW) and finite ground coplanar waveguide (FGC) 90-degree crossover junctions. It is shown that FGC crossover junctions have approximately 15 dB lower coupling than CPW crossover junctions. Furthermore, it is shown that the FGC junctions do not excite the parasitic slotline mode, whereas, the CPW junctions do excite the slotline mode. The results presented indicate that the FGC crossover junction is easier to implement and has better characteristics than the CPW crossover junction.     

一种基于GaAs MMIC技术的X波段电容式膜桥MEMS微波功率传感器

This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide （CPW） transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit （MMIC） process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.     

基于模糊神经网络的微波器件建模

通过模糊数据曲线来确定模糊规则,从而只需要根据系统的输入输出数据来建立网络最佳结构,并对BP算法进行了改进以加快网络模型的训练速度.在此基础上,用建立的模糊神经网络对微波无源器件共面波导的电容参数来进行提取.实验证明,模糊数据曲线确定的网络结构是接近最佳的,在训练速度和精度方面,效果优于神经网络建模算法.     

An analytical method for direct calculation of E and H-fieldpatterns of conductor-backed coplanar waveguides

A new direct method of computing the electromagnetic field patterns surrounding the conductor-backed coplanar waveguide (CPW) structure is proposed. Analytical closed-form expressions describing the quasi-TEM field pattern in both the air and the dielectric substrate for conductor-backed CPW's are presented. This approach is based on a new technique which employs a series of inverse conformal mappings to transform a known field pattern from a rectangular structure back into the CPW structure in order to obtain its unknown field pattern directly. A computer program based on this method has demonstrated the speed at which the fields can be plotted compared to existing methods which require repetitive application. Graphical results of these field patterns are presented as a function of the CPW's geometry and dielectric substrate thickness. These held maps which have been directly drawn with true curvilinear squares enable the determination of power flow density, since the same power flows through each square. This direct method of characterizing the power flow density throughout the CPW structure could become an important design tool for the modeling of coplanar monolithic microwave integrated circuits (CMMIC's)     

共面紧凑型微波光子晶体在共面波导中的应用

提出一种地平面刻蚀共面紧凑型微波光子晶体(PBG)的共面波导结构,介绍了微波光子晶体的基本单元结构,并设计出具有90°弯折的共面波导样品.使用矢量网络分析仪测试该结构的散射参数,测量结果显示,其传输特性比普通的共面波导在高频部分具有较大的提高.同时,相比于传统的三维微波光子晶体,该结构具有导体损耗小,加工工艺简单,便于应用于光电封装和单片微波集成电路的特点.

Abstract：

A novel coplanar waveguide using coplanar compact microwave photonic-handgap (PBG) structure is proposed. The basic unit of microwave PBG structure is introduced and a waveguide sample with a 90 degree break is designed. Testing results obtained through vector network analyzer display an obvious promotion in transmission parameter, especially in the high frequency part. Meanwhile, compared with the common 3-dimension microwave PBG structure, this structure with a low conductor loss can be processed with standard planar fabrication technology, which makes it applicable in opto-electronic package and monolithic microwave integrated circuit (MMIC).     

K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology

A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-/spl kappa/ benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a high impedance BCB CPW microstrip line (Z/sub 0/=70 /spl Omega/) for the biasing circuits, and a Z/sub 0/=50 /spl Omega/ line for the RF signal transmission. The low dielectric constant characteristic of the BCB interlayer is beneficial for a common-ground bridge process, which reduces the parasitics. The calculated loss tan/spl delta/ is 0.036 for the BCB at 20 GHz. The one-stage MMIC amplifier achieves an S/sub 21/ of 5 dB at 20 GHz, which is the first demonstration of the K-band InGaP-InGaAs DCFET monolithic circuit.