Preparation and thermoelectric properties of Bi2SexTe3−x bulk materials

Bi₂Te₃ and Bi₂Se₃ nanoplates were synthesized by a microwave-assisted wet chemical method, and Bi₂Se_xTe_3−x (x=1, 2, 3) bulk nanocomposites were then prepared by hot pressing the Bi₂Te₃ and Bi₂Se₃ nanoplates at 80 MPa and 723 K in vacuum. The phase composition and microstructures of the bulk samples were characterized by powder X-ray diffraction and field-emission scanning electron microscopy, respectively. The electrical conductivity of the Bi₂Se_xTe_3−x bulk nanocomposites increases with increasing Se content, and the Seebeck coefficient value is negative, showing n-type conduction. The absolute Seebeck coefficient value decreases with increasing Se content. A highest power factor, 24.5 µWcm⁻¹ K⁻², is achieved from the sample of x=1 at 369 K among the studied samples.     

The influence of CNTs on the thermoelectric properties of a CNT/Bi2Te3 composite

CNT/Bi₂Te₃ composites were prepared from composite powders in which CNTs were implanted in the Bi₂Te₃ matrix powders by a novel chemical route. It was found that the fabricated composite had a microstructure of a homogeneous dispersion of CNTs in the Bi₂Te₃ matrix due to interfacial bonding agents of oxygen atoms attaching to the surface of CNTs. The dimensionless figure of merit (ZT) of the composite shows significantly increased values compared to those of pure binary Bi₂Te₃ in the temperature range of 298–498 K and a maximum ZT of 0.85 was obtained at 473 K. It is considered that the improved thermoelectric performance of the composite mainly originated from thermal conductivity that was reduced by active phonon-scattering at the CNT/Bi₂Te₃ interface.     

Effect of Pb doping on the electrical properties of textured Bi-2212 superconductors

Bi_2−xPb_xSr₂CaCu₂O_y textured materials (x = 0.0, 0.2, 0.4, and 0.6) have been successfully prepared by the laser floating zone technique. Microstructure and electrical properties (J_C and T_C) have been clearly affected by Pb addition. From the E–I curves, slope of the transition between the superconducting and the normal state (n) at 77 K reaches a maximum of about 16 for the 0.4 Pb doped samples. This value is much higher than the typical ones for the Bi-2212 materials. Moreover, when the electrical properties of the 0.4 Pb doped samples are measured at lower temperatures (between 65 and 77 K), n values increase when the temperature is decreased. A maximum n value of 32 has been reached at 65 K which makes this material very attractive for its use as resistive fault current limiters.     

High thermoelectric performance of (Bi1-xPrx)2(Te0.9Se0.1)3 alloys prepared by high-pressure sintering method

In this article, n-type (Bi_1-xPr_x)₂(Te_0.9Se_0.1)₃ (x = 0, .002, .004, .008) alloys were fabricated by high-pressure sintering (HPS) method together with annealing. The effect of high pressure and Pr contents on the microstructure and thermoelectric performance of samples were explored in detail. The results show that the HPS samples are composed of nanoparticles. Pr doping has significant impacts on the electrical and thermal transport properties of the Bi₂Te_2.7Se_0.3 alloys. The HPS sample with x = .004 shows the maximum ZT value of .31 at 473 K, which is enhanced by 41% to compare with the Pr-free sample. Annealing can improve the thermoelectric properties by increasing the electrical transport properties and decreasing the thermal conductivity simultaneously. As a result, the highest ZT value of 1.06 is achieved for the annealed sample with x = .004 at 373 K, which is beneficial to the thermoelectric power generation.     

Enhancements of thermoelectric performance in n-type Bi2Te3-based nanocomposites through incorporating 2D Mxenes

Bi₂Te_2.7Se_0.3 compound has been considered as an efficient n-type room-temperature thermoelectric (TE) material. However, the large-scale applications for low-quality energy harvesting were limited due to its low energy-conversion efficiency. We demonstrate that TE performance of Bi₂Te_2.7Se_0.3 system is optimized by 2D Ti₃C₂T_x additive. Here, a 43% reduction of electrical resistivity is obtained for the nanocomposites at 380 K, originating from the increased carrier concentration. Consequently, the g = 0.1 sample shows a maximum power factor of 1.49 Wmm^?1K^?2. Meanwhile, the lattice thermal conductivity for nanocomposite samples is reduced from 0.77 to 0.41 Wm^?1K^?1 at 380 K, due to the enhanced phonon scattering induced by the interfaces between Ti₃C₂T_x nanosheets and Bi₂Te_2.7Se_0.3 matrix. Therefore, a peak ZT of 0.68 is achieved at 380 K for Bi₂Te_2.7Se_0.3/0.1 wt% Ti₃C₂T_x, which is enhanced by 48% compared with pristine sample. This work provides a new route for optimizing TE performance of Bi₂Te_2.7Se_0.3 materials.     

Chemical composition and tolerance factor at the morphotropic phase boundary in (Bi0.5Na0.5)TiO3-based piezoelectric ceramics

A quantitative relation between the morphotropic phase boundary (MPB) composition and the tolerance factor (t) in (Bi_0.5Na_0.5)TiO₃ (BNT)-based piezoelectric ceramics was established. The t value of the MPB compositions in BNT-based ceramics is around 0.990–0.993 and is independent of the types of added compounds. In order to experimentally demonstrate it, two piezoelectric ceramic systems (1 ? x)(Bi_0.5Na_0.5)TiO₃–x(Ba_1?aSr_a)TiO₃, a = 0.05 and 0.3 (BNBST5-x and BNBST30-x, x < 12%), were used. X-ray diffraction patterns and the lattice parameter investigations revealed that these two systems formed solid solutions within the studied stoichiometry and showed a rhombohedral–tetragonal phase transformation. Furthermore, both the structure analysis and electric properties measurements indicated that the MPB compositions were BNBST5-6 and BNBST30-8 and their corresponding t value were 0.9900 and 0.9903, respectively. The results confirm the relation between the MPB composition and t value and provide a method for designing new piezoelectric materials.     

Structural,thermal and electrical properties of Ti4+ substituted Bi2O3 solid systems

In the present study, the effect of TiO₂ doping on (1 ? x) Bi₂O₃ (x)TiO₂ (x = 0.05, 0.10, 0.15, 0.20) materials is investigated using X-ray diffraction (XRD), differential thermal analysis (DTA), ac conductivity, scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). XRD results show the formation of single phase Bi₁₂TiO₂₀ at x ≥ 0.15 concentration of TiO₂. It is observed that, the lower concentration of TiO₂ leads to the formation of mixed phase. The x = 0.15 and x = 0.20 samples exhibit regular and uniform distribution of the grains as compared to x = 0.10 sample. The highest conductivity is observed for x = 0.15 specimen, e.g., 9 × 10^?7 S cm^?1.     

Phase evolution and chemical durability of Zr1-xNd xO2-x/2 (0 ≤ x ≤ 1) ceramics

A series of Zr_1-xNd _xO_2-x/2 (0 ≤ x ≤ 1) ceramics was prepared by solid-state reaction method. The effects of Nd content on the phase evolution were investigated. The chemical durability of resulting waste forms was also examined. The results show that the ceramics with x < 0.1 show monoclinic and cubic zirconia phase, with 0.2 ≤ x < 0.4 exhibit a single cubic phase, with 0.4 ≤ x ≤ 0.6 exhibit a single pyrochlore phase, with 0.6 < x < 0.8 exhibit a single cubic phase and remain cubic phases and hexagonal Nd₂O₃ when 0.8 ≤ x ≤ 1. The unit cell parameters of the Nd-doped zirconia samples increase as the Nd content increases. Moreover, the normalized element release rates of Nd element in Nd-doped zirconia ceramics firstly decrease with leaching time and almost no change after 21 days (∼0⁻⁶ g m⁻² d⁻¹), demonstrating its good chemical durability.     

Enhanced thermoelectric properties and electronic structures of p-type BiCu1−xAgxSeO ceramics

The thermoelectric properties and electronic structures were investigated on p-type BiCu_1-xAg_xSeO (x=0, 0.02, 0.05, 0.08) ceramics prepared using a two-step solid state reaction followed by inductively hot pressing. All the samples consist of single BiCuSeO phase with lamella structure and no preferential orientation exists in the crystallites. Upon replacing Cu⁺ by Ag⁺, maximum values of electrical conductivity of 36.6 S cm⁻¹ and Seebeck coefficient of 350 μV K⁻¹ are obtained in BiCu_0.98Ag_0.02SeO and BiCu_0.92Ag_0.08SeO, respectively. Nevertheless, a maximum power factor of 3.67 μW cm⁻¹K⁻² is achieved for BiCu_0.95Ag_0.05SeO at 750 K owing to the moderate electrical conductivity and Seebeck coefficient. Simultaneously, this oxyselenide exhibits a thermal conductivity as low as 0.38 W m⁻¹ K⁻¹ and a high ZT value of 0.72 at 750 K, which is nearly 1.85 times as large as that of the pristine BiCuSeO. The enhancement of thermoelectric performance is mainly attributed to the increased density of states near the Fermi level as indicated by the calculated results.     

A new polymorph telluridoindate [In(en)3][In5Te9(en)2] with photocatalytic properties

A new polymorph telluridoindate [In(en)₃][In₅Te₉(en)₂] (denoted as β-type, en = ethylenediamine) has been solvothermally synthesized and characterized. The crystal data for the β-type are listed as follows: monoclinic, space group Cc (No. 9), a = 11.642(2), b = 20.421(4), c = 17.577(4) Å, β = 92.20(3)°, V = 4175.7(14) Å³, Z = 4. The β-type contains organic-decorated [In₄Te₉(en)]^6 − supertetrahedral cluster and [InTe₃(en)]^3 − tetrahedron, which are interconnected to form an organic-decorated 2-D telluridoindate layer of [In₅Te₉(en)₂^3 −]_n with 9-membered rings. Two relevant conformers of telluridoindates are compared with each other. The β-type indicates absorption edge at 2.23 eV and exhibits photocatalytic activity for degradation of methyl orange (MO).     

Enhanced non-linear current-voltage response of Te-doped calcium copper titanate ceramics

The influence of partial replacement of Ti⁴⁺ ions by Te⁴⁺ in calcium copper titanate lattice on dielectric and non-linear current- voltage (I–V) characteristics was systematically studied. There was a remarkable increase in the values of the nonlinear coefficient (α) with Te⁴⁺ doping concentration in CaCu₃Ti_4-xTe_xO₁₂ (where, x=0, 0.1, 0.2).For instance, the α values increase from 2.9 (x=0) to 22.7 (x=0.2) for ceramics sintered at 1323 K/8 h. The room temperature value of current density (J) at the electrical field of 250 V/cm for CaCu₃Ti_3.8Te_0.2O₁₂ ceramics is almost 400 times higher than that of the pure CaCu₃Ti₄O₁₂ ceramics sintered at 1323 K. A systematic investigation into I–V behaviour as a function of temperature gave an insight into the conduction mechanisms of undoped and doped ceramics of calcium copper titanate (CCTO). The calculated potential barrier value for doped ceramics (~ 0.21 eV) dropped down to almost one third that of the undoped ceramics (~ 0.63 eV).     

Preparation and thermoelectric properties of MoS2/Bi2Te3 nanocomposites

MoS₂ nanosheets with size of several-hundred nanometers were prepared by a hydrothermal intercalation/exfoliation method, then MoS₂/Bi₂Te₃ composite nanopowders were prepared by a microwave-assisted wet chemical method using the MoS₂ nanosheets, TeO₂, Bi(NO₃)₃·5H₂O, KOH and ethylene glycol as raw materials. Bulk MoS₂/Bi₂Te₃ nanocomposites were prepared by hot pressing the MoS₂/Bi₂Te₃ composite nanopowders with MoS₂ nanosheet content ranging from 0 to 17 wt% at 80 MPa and 648 K in vacuum. X-ray photoelectron spectroscopy and X-ray diffraction analyses indicate that MoS₂ and Bi₂Te₃ did not react each other during the hot pressing. FESEM observation reveals that the MoS₂/Bi₂Te₃ composite samples had a more compact microstructure than the pristine Bi₂Te₃ bulk sample. The MoS₂ phase was relatively randomly dispersed in the composite. At a given temperature, the electrical conductivity of the composites increases first then decreases as the MoS₂ content increases, whereas the Seebeck coefficient of the bulk nanocomposites does not change much. A highest power factor, ~18.3 μW cm⁻¹ K⁻² which is about 30% higher than that of pristine Bi₂Te₃ sample, at 319 K has been achieved from a nanocomposite sample containing 6 wt% MoS₂.     

Strong photoluminescence and good electrical properties in Eu-modified SrBi2Nb2O9 multifunctional ceramics

Bismuth layer-structured ferroelectric (BLSFs) ceramics of Sr_1−xEu_x Bi₂Nb₂O₉ (SBT-xEu, x=0.000, 0.002, 0.004, 0.006) were prepared by a conventional solid-state reaction method. All the samples have a bismuth oxide layered structure with a dense microstructure. The ferroelectric, piezoelectric, dielectric and optical properties of the ceramics were investigated. After Eu³⁺ doping, samples show a bright red photoluminescence upon blue light excitation of the 400–500 nm. Upon the excitation of 465 nm light, the materials have two intense emission bands peaking around 593 nm (yellow) and 616 nm (red). Meanwhile, good electrical properties with large piezoelectric constant d₃₃ of 14 pC/N and large remnant polarization 2P_r of 11.97 μC/cm² are obtained at x=0.006. Moreover, this material has a high Curie temperature (T_c=429 °C) and high resistivity, which makes the material resistant to thermal depolarization up to its Curie temperature. This feature indicates that the SBN-xEu ceramics have a latent use in high temperature applications.     

A correlation between piezoelectric response and crystallographic structural parameter observed in lead-free (1-x)(Bi0.5Na0.5)TiO3–xSrTiO3 piezoelectrics

The structure of lead-free (1-x)(Bi_0.5Na_0.5)TiO₃-xSrTiO₃ (BNT-STx) ceramics was analyzed by the Rietveld method, using X-ray diffraction and neutron scattering data. The structural refinement results suggest that the crystal structure successively changes with SrTiO₃ concentration, x, from the rhombohedral phase (x = 0.00) to rhombohedral and tetragonal (x = 0.10–0.30), tetragonal and cubic (x = 0.40–0.60), and finally cubic (x = 0.80–1.00) phases. Correlation between the charge sensor constant (d₃₃) and the weighted off-center value (d_w) was observed, which may be attributed to the increased dipole motion in the unit cell due to an increased tendency to respond to external stimulation. Furthermore, an improved charge sensor constant (d₃₃) of 140 pC/N was observed for BNT-ST0.20, and a large strain of 0.25% and a d₃₃^* value of 443 pm/V were observed from x = 0.30.     

Tunable polarization and magnetization at room-temperature in narrow bandgap Aurivillius Bi6Fe2−xCox/2Nix/2Ti3O18

Aurivillius compound Bi₆Fe_2-xCo_x/2Ni_x/2Ti₃O₁₈ (xBFCNT, 0≤x≤1) ceramics synthesized by a conventional solid state method, can exhibit simultaneously visible-light response, ferroelectric and ferromagnetic orders at room-temperature. The effects of structural phases and lattice distortions on electron transitions, polarizations and orbital orderings have been systematically investigated. Narrow band gaps of xBFCNT were confirmed and modified from 2.12 eV to 1.28 eV with increasing x by ultraviolet-visible-near infrared spectrophotometer. Co and Ni ions co-doping is found to induce ferromagnetic behavior but affects adversely the ferroelectric characteristics. In particular, the x=0.4 composition show obvious ferromagnetism with maximum remnant magnetization M_r (0.5 emu/g) and saturation magnetization M_s (2.4872 emu/g), due to spin canting of Fe/Ni/Co-based sub-lattices. These results reveal rich physical phenomena and open an avenue to design promising solar-energy conversion devices and multiferroic applications.     

Effect of Nd substitution on the microstructure and electrical properties of Bi7Ti4NbO21 piezoceramics

Neodymium (Nd) doped intergrowth bismuth layer-structured ferroelectric compounds Bi_7?xNd_xTi₄NbO₂₁ (x = 0, 0.5, 0.75, 1.0, 1.25, 1.5, 1.75 and 2.0) were synthesized through a solid-state method. The influence of the Nd³⁺ substitution of Bi³⁺ on the lattice, microstructure and electrical properties of these compounds were investigated. The X-ray diffraction and Raman scattering analyses demonstrate that a phase transition from orthorhombic to pseudo-tetragonal occurs in these compounds, relying on substitution proportions and sites of Nd³⁺ for Bi³⁺. With the increasing Nd³⁺ dopants, the growth of plate-like grains along the a–b plane and a secondary intergranular metallic Bi phase were retarded which resulted in the increases of sintering temperature, density and electrical resistance of the doped ceramics. The resultant ceramic with x = 1.25 possesses a piezoelectric coefficient d₃₃ up to 16.3 pC/N with a Curie temperature T_C above 750 °C were obtained for the compound.     

Effect of Na0.5Bi0.5TiO3 on dielectric properties of BaTiO3 based ceramics

In this work, Na_0.5Bi_0.5TiO₃ (NBT) was used to improve the high temperature dielectric properties of Nb, Co-doped BaTiO₃ (BT). Different x was selected (x = 0, 0.02, 0.04, 0.06, 0.08, 0.1, 0.2, 0.3, 0.4) to optimize the ratio of BT to NBT in (1 ? x) BT–xNBT solid solution. The dielectric constant of the original X7R material is about 4900 at room temperature, decreasing to 2500 with NBT addition (x = 0.2). Of important is that the temperature stability was improved with dielectric constant variation being less than ±15% up to 160 °C.     

Low-sintering ceramic materials based on Bi2O3–ZnO–Nb2O5 compounds

In this work, sintering behaviour of Bi₂O₃–ZnO–Nb₂O₅ compounds was investigated in order to develop LTCC materials with suitable microwave properties. Structure, dielectric properties and sintering were studied for ceramic dielectrics based on the system: Bi₂ZnNb₂O₉ with the pyrochlore structure and ZnNb₂O₆ with a columbite one. The work was carried out over a wide range of initial components concentration. Ceramic samples of these materials were prepared by the mixed oxide technique. The effect of adding glass to the materials have been discussed. The sintering behaviour, dielectric permittivity, quality factor and crystal structures have been characterized for ceramic samples depending on compositions. Low-temperature co-firable ceramic material with ɛ ∼ 30, τ_ɛ = 0 and Q × f = 3500 GHz based on the above system was synthesized.     

Piezoelectric properties and phase transition temperatures of the solid solution of (1 − x)(Bi0.5Na0.5)TiO3–xSrTiO3

The phase diagram of (1 ? x)(Bi_0.5Na_0.5)TiO₃–xSrTiO₃ was completed and investigations on polarization and strain in this system were carried out. (1 ? x)(Bi_0.5Na_0.5)TiO₃–xSrTiO₃-ceramics were prepared by conventional mixed oxide processing. The depolarization temperature (T_d), the temperature of the rhombohedral–tetragonal phase transition (T_r–t) and the Curie temperature (T_m) were determined by measuring the temperature dependence of the relative permittivity. All solid solutions of (1 ? x)(Bi_0.5Na_0.5)TiO₃–xSrTiO₃ show relaxor behavior (A-site relaxor). From XRD-measurements a broad maximum of the lattice parameter can be observed around x = 0.5 but no structural evidence for a morphotropic phase boundary was found. SEM-analysis revealed a decrease of the grain size for increasing SrTiO₃-content. At room temperature a maximum of strain of about 0.29% was found at x = 0.25 which coincides with a transition from a ferroelectric to an antiferroelectric phase. The temperature dependence of the displacement indicates an additional contribution from a structural transition (rhombohedral–tetragonal), which would be of certain relevance for the existence of a morphotropic phase boundary.     

Microwave dielectric properties of BaxLa4Ti3 + xO12 + 3x (x = 0.0–1.0) ceramics

In the BaO–La₂O₃–TiO₂ system, the Ba_nLa₄Ti_3 + nO_12 + 3n homologous compounds exist on the tie line BaTiO₃–La₄Ti₃O₁₂ besides tungstenbronze-type like Ba_6 − 3xR_8 + 2xTi₁₈O₅₄ (R = rare earth) solid solutions. There are four kinds of compounds in the homologous series: n = 0, La₄Ti₃O₁₂; n = 1, BaLa₄Ti₄O₁₅; n = 2, Ba₂La₄Ti₅O₁₈; n = 4, Ba₄La₄Ti₇O₂₄. These compounds have the layered hexagonal perovskite-like structure, which has a common sub-structure in the crystal structure. These compounds have been investigated in our previous studies. In this study, we have investigated the phase relation and the microwave dielectric properties of Ba_xLa₄Ti_3 + xO_12 + 3x ceramics in the range of x between 0.2 and 1.0. With the increase in x, the dielectric constant ɛ_r locates around 45, the quality factor Q × f shows over 80,000 GHz at x = 0.2 and the minimum value of 30,000 GHz at x = 0.9, and the temperature coefficients of resonant frequency τ_f is improved from −17 to −12 ppm/°C. At x = 0.2, the ceramic composition obtained has dielectric constant ɛ_r = 42, the temperature coefficient of the resonant frequency τ_f  = −17 ppm/°C and a high Q × f of 86,000 GHz.