共查询到20条相似文献，搜索用时 15 毫秒
1.
Kaikai Pang Liya Miao Qiang Zhang Qiaoyan Pan Yan Liu Huilie Shi Jingsong Li Wenjie Zhou Zongwei Zhang Yuyou Zhang Gang Wu Xiaojian Tan Jacques G. Noudem Jiehua Wu Peng Sun Haoyang Hu Guo-Qiang Liu Jun Jiang 《Advanced functional materials》2024,34(25):2315591
Bi2Te3-based alloys have historically dominated the commercial realm of near room-temperature thermoelectric (TE) materials. However, the more widespread application is currently constrained by its mediocre TE performance and inferior mechanical properties resulting from intrinsic hierarchical structure. Herein, microstructure modulation and carrier transport optimization strategies are employed to efficiently balance the electro-thermal transport performance. Specifically, the weighted mobility increases by 24%, while the lattice thermal conductivity decreases by 31% at 350 K compared to the matrix. Consequently, the Bi0.5Sb1.496Cu0.004Te2.98 sample attains a peak ZT of 1.45 at 350 K and an average ZT of 1.20 (300–500 K). Moreover, intricated microstructure design, exemplified by the gradient twin structure, significantly enhances the mechanical performance metrics, including Vickers hardness, compressive strength, and bending strength, to notable levels of 0.94 GPa, 224 MPa, and 58 MPa, respectively. Consequently, the constructed 17-pair TE modules demonstrate a maximum conversion efficiency of 6.5% at ΔT = 200 K, surpassing the majority of reported Bi2Te3-based modules. This study provides novel insights into the synergistic enhancement of TE and mechanical properties in Bi2Te3-based materials, with potential applicability to other TE systems. 相似文献
2.
Hung-Wei Chen;Bo-Chia Chen;Hsin-Jay Wu; 《Advanced Electronic Materials》2024,10(6):2300793
In this study, the Sb content within p-type Bi2Te3 by employing phase diagram engineering is strategically tuned. This method retains the advantages of Sb doping but mitigated the brittleness typically seen in high-Sb Bi0.5Sb1.5Te3 (BST). The as-constructed phase diagram demonstrates the asymmetrical homogeneity of (Bi, Sb)2Te3, guiding focus toward developing an optimized p-type (Bi2Te3)0.96(Sb2Te)0.04 with reduced Sb content. The resulting crystal of (Bi2Te3)0.96(Sb2Te)0.04 exhibit an exceptional peak zT of 1.3 at 303 K, surpassing the mechanical robustness of standard high-Sb BST. Additionally, it matches the energy conversion efficiency of traditional BST, achieving 2.3% at a temperature difference ΔT of 150 K. This significant advance makes (Bi2Te3)0.96(Sb2Te)0.04 a potential competitor to the well-established BST, thanks to its enhanced thermoelectric performance owing to the elevated carrier concentration and a less brittle nature due to the diluted Sb dopant. 相似文献
3.
Leonard Franke Andres Georg Rösch Muhammad Irfan Khan Qihao Zhang Zhongmin Long Irene Brunetti Matías Nicolas Joglar Ana Moya Lara Claudia Delgado Simão Holger Geßwein Alexei Nefedov Yolita M. Eggeler Uli Lemmer Md Mofasser Mallick 《Advanced functional materials》2024,34(40):2403646
Printing technologies have the potential to reduce the manufacturing costs of many electronic devices significantly. Here, a scalable manufacturing route for high-performance fully printed thermoelectric generators (TEGs) as a cost-effective solution for energy harvesting is demonstrated. This work presents a facile one-pot synthesis method to develop a high-performance Ag2Se-based n-type paste, which is used to fabricate a fully printed origami TEG by employing the Ag2Se-based material for the n-type legs and a previously reported Bi-Sb-Te-based paste for the p-type legs. The n-type film exhibits a power factor of 13.5 µW cm−1 K−2 and a maximum figure-of-merit (ZT) of ≈ 0.92. Furthermore, printable carbon paste is introduced as an effective interface between the thermoelectric and electrode materials, which reduces the contact resistances in the thermoelectric device. The origami folded TEG exhibits an open-circuit voltage (VOC) of 284 mV, a power output of 370.88 µW, and an exceptionally high power density (pmax) of 10.72 Wm−2 at a temperature difference (∆T) of 80.7 K, considering that the TEG fabrication does not involve any pressure treatment and vacuum sintering. These results underscore the scalability of the presented manufacturing process and the capability of printed origami TEGs for powering the Internet of Things (IoT) with low-grade waste heat. 相似文献
4.
Bi2Te3热电材料研究现状 总被引：1，自引：0，他引：1
Bi2Te3热电材料是半导体材料,室温下具有良好的热电特性,能够实现热能和电能的相互转化,应用前景十分广阔。Bi2Te3热电材料的转换效率低是影响其应用的瓶颈之一,目前世界范围内的研究热点主要集中在如何提高热电材料的能量转换效率上。综述了热电材料的种类、国内外关于Bi2Te3热电薄膜的制备方法和性能研究,对多种典型制备方法进行分析对比,探讨了影响Bi2Te3热电薄膜质量的因素及机制。结合Bi2Te3热电薄膜在温差发电和热电制冷方面的应用,如果微型热电制冷器实现与大功率LED芯片集成封装,那么芯片级低温散热问题有望解决。 相似文献
5.
Bi2Te3薄膜是室温下热电性能最好的热电材料,利用磁控溅射在长有一薄层SiO2的n型硅样品上制备Bi/Te多层复合薄膜,经后续退火处理生成Bi2Te3。通过分析Bi2Te3薄膜的生长和退火工艺,探讨Bi/Te中Te的原子数分数对薄膜热电性能的影响。采用XRD和SEM对薄膜的结构、形貌和成分进行分析,并测量不同条件下的Seebeck系数。薄膜Seebeck系数均为负数,表明所制备样品是n型半导体薄膜,且最大值达到-76.81μV.K-1;电阻率ρ随Te的原子数分数增大而增大,其趋势先缓慢后迅速。Bi2Te3薄膜的热电性能良好,Te的原子数分数是60.52%时,功率因子最大,为1.765×10-4W.K-2.m-1。 相似文献
6.
Teng Fang Xin Li Chaoliang Hu Qi Zhang Jiong Yang Wenqing Zhang Xinbing Zhao David J. Singh Tiejun Zhu 《Advanced functional materials》2019,29(28)
Bi2Te3‐based compounds and derivatives are milestone materials in the fields of thermoelectrics (TEs) and topological insulators (TIs). They have highly complex band structures and interesting lattice dynamics, which are favorable for high TE performance as well as strong spin orbit and band inversion underlying topological physics. This review presents rational calculations of properties related to TEs and provides theoretical guidance for improving the TE performance of Bi2Te3‐based materials. Although the band structures of these TE materials have been studied theoretically and experimentally for many years, there remain many controversies on band characteristics, especially the locations of band extrema and the exact values of bandgaps. Here, the key factors in the theoretical investigations of Bi2Te3, Bi2Se3, Sb2Te3, and their solid solutions are reviewed. The phonon spectra and lattice thermal conductivities of Bi2Te3‐based materials are discussed. Electronic and phonon structures and TE transport calculations are discussed and reported in the context of better establishing computational parameters for these V2VI3‐based materials. This review provides a useful guidance for analyzing and improving TE performance of Bi2Te3‐based materials. 相似文献
7.
Haixu Qin Bo Cui Wei Wang Sibo Sun Dandan Qin Muchun Guo Liangjun Xie Fengkai Guo Wei Cai Jiehe Sui 《Advanced Electronic Materials》2021,7(7):2100173
Bi2Te3-based alloys are the most mature and widely used thermoelectric materials since their zT value has been significantly improved in past decades. However, the poor mechanical strength and machinability derived from the easy cleavage along basal planes not only produce many scraps in the device fabrication process but also lead the devices unstable in the actual service. In this work, a tiny amount of MgB2 is induced in the Bi0.4Sb1.6Te3 alloy to simultaneously enhance the thermoelectric and mechanical properties. In detail, magnesium atoms occupy the bismuth/antimony sites to optimize the carrier concentration and suppress the bipolar effect, pushing the average zT value up to 1.16 ranging from 300 to 500 K, which catches up with the current highest level in p-type Bi2Te3-based materials. Moreover, the precipitation phase, boron nanoparticles, distributed at the grain boundaries can effectively improve the compressive strength from 166 to 239 MPa. The prominent thermoelectric and mechanical properties endow the materials with great potential for commercial applications. 相似文献
8.
Meng-Hao Lin Mohamed Gamal Mohamed Chih-Jung Lin Yu-Jane Sheng Shiao-Wei Kuo Cheng-Liang Liu 《Advanced functional materials》2024,34(45):2406165
Conjugated microporous polymers (CMPs) are characterized by high physical and chemical stabilities along with low thermal conductivities due to their conjugated microporous frameworks, making them promising candidates for thermoelectric application. However, the advancement of CMPs within the thermoelectric field is considerably hampered by their inadequate electrical conductivity and unfavorable processability. Herein, highly-conducting carbon nanotubes (CNTs) are dispersed in two solvents (1,2-dichlorobenzene and N-methyl-2-pyrrolidone) to fabricate p- and n-type CNT/CMP nanohybrids. Additionally, two unique CMPs are synthesized to elucidate the impacts of the chemical structures and pore architectures on the thermoelectric properties of the nanohybrids. Finally, due to the differing steric hindrance effects of the two CMPs, the thermoelectric performance can be tuned under varying circumstances. The synergetic effects of low thermal conductivity and efficient dispersion capability of the CMPs yield optimized figure of merit (zT) values of 0.053 and 0.13 at 303 K for the p- and n-type thermoelectric nanohybrids, respectively. This investigation presents an alternative approach to building high zT p- and n-type thermoelectric CNT/CMP nanohybrids operating near ambient temperature via the solvent doping effect and chemical structure design of the CMPs, thereby establishing CMP-based materials as promising candidates for thermoelectric application. 相似文献
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10.
Sb2Te3基半导体合金是目前性能较好的热电半导体材料.将材料低维化处理可以获得较块状材料更大的热电优值.通过磁控溅射工艺制备低维Sb2Te3薄膜,并通过AFM、XRD和XPS测试方法对薄膜的成分、薄膜表面以及原子偏析进行表征.通过退火工艺去除薄膜应力,观察退火工艺前后薄膜表面形貌的变化以及退火温度对薄膜表面质量的影响.试验结果表明通过磁控溅射工艺所制备出的Sb2Te3薄膜为非晶态,随着溅射功率增大,薄膜的表面粗糙度增大.退火可使薄膜变为晶态,但是表面粗糙度增大.较大或较小溅射功率下所制备的薄膜其合金成分与合金靶材有较大偏差. 相似文献
11.
Daryoosh Vashaee 《半导体学报》2024,45(12):122304-1-122304-16
This study presents a comprehensive optimization and comparative analysis of thermoelectric (TE) infrared (IR) detectors using Bi2Te3 and Si materials. Through theoretical modeling and numerical simulations, we explored the impact of TE material properties, device structure, and operating conditions on responsivity, detectivity, noise equivalent temperature difference (NETD), and noise equivalent power (NEP). Our study offers an optimally designed IR detector with responsivity and detectivity approaching 2 × 105 V/W and 6 × 109 cm∙Hz1/2/W, respectively. This enhancement is attributed to unique design features, including raised thermal collectors and long suspended thin thermoelectric wire sensing elements embedded in low thermal conductivity organic materials like parylene. Moreover, we demonstrate the compatibility of Bi2Te3-based detector fabrication processes with existing MEMS foundry processes, facilitating scalability and manufacturability. Importantly, for TE IR detectors, zT/κ emerges as a critical parameter contrary to conventional TE material selection based solely on zT (where zT is the thermoelectric figure of merit and κ is the thermal conductivity). 相似文献
12.
采用溶胶一凝胶法在Pt/Ti/SiO2/Si衬底上制备了钛酸锶钡/铋锌铌多层复合薄膜样品.研究了不同退火温度下多层复合薄膜的结构、微观形貌及介电性能.结果表明:在退火温度高于700℃时,所得复合薄膜中会出现立方焦绿石结构的铋锌铌和钙钛矿结构的钛酸锶钡.750℃退火处理得到的多层复合薄膜,表面致密,无裂纹,其相对介电常数... 相似文献
13.
空间近日等强辐照造成的高温严重影响光伏电池的转化效率,同时造成辐射能量的浪费.以单晶Si光伏电池和Bi2Te3热电电池为基本单元,构建Si-Bi2 Te3光热耦合电源器件模型.采用有限元分析法分析特定辐射条件下Si-Bi2Te3光热耦合电源器件的热分布情况,并结合光伏电池与热电电池的温度特性进一步计算了器件的转化效率.结果显示,Bi2Te3热电池的存在一定程度上降低了Si光伏电池的工作温度,在空间环境下Si-Bi2Te3光热耦合电源器件的转化效率相对于单一的Si光伏电池有2％ ～3％的提高.最后讨论了该器件Si光伏电池和Bi2Te3热电池的功率输出方式. 相似文献
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15.
Gang Wu Qiang Zhang Yuntian Fu Xiaojian Tan Jacques G. Noudem Zongwei Zhang Chen Cui Peng Sun Haoyang Hu Jiehua Wu Guo-Qiang Liu Jun Jiang 《Advanced functional materials》2023,33(47):2305686
Bismuth-telluride-based alloy is the sole thermoelectric candidate for commercial thermoelectric application in low-grade waste heat harvest near room temperature, but the sharp drop of thermoelectric properties at higher temperature and weak mechanical strength in zone-melted material are the main obstacles to its wide development for power generation. Herein, an effective approach is reported to improve the thermoelectric performance of p-type Bi0.42Sb1.58Te3 hot-pressed sample by incorporating Ag5SbSe4. A peak ZT of 1.40 at 375 K and a high average ZT of 1.25 between 300 and 500 K are achieved. Such outstanding thermoelectric performance originates from the synergistic effects of improved density-of-states effective mass, reduced bipolar thermal conductivity by the boosted carrier concentration, and suppressed lattice thermal conductivity by the induced phonon scattering centers including substitute point defects, dislocations, stress–strain clusters, and grain boundaries. Comprised of the p-type Bi0.42Sb1.58Te3 + 0.10 wt% Ag5SbSe4 and zone-melted n-type Bi2Te2.7Se0.3, the thermoelectric module exhibits a high conversion efficiency of 6.5% at a temperature gradient of 200 K, indicating promising applications for low-grade heat harvest near room temperature. 相似文献
16.
Bi2O3过量对熔盐法制备Bi4Ti3O12粉体的影响 总被引：1，自引：0，他引：1
以NaCl-KCl熔盐法制备了各向异性的Bi4Ti3O12粉体,研究了w(Bi2O3过量)对粉体的影响,优化了制备Bi4Ti3O12粉体的工艺参数。结果表明:w(Bi2O3过量)为7.5%,1100℃烧结2h所得到的Bi4Ti3O12粉体微观形貌最佳,并探讨了Bi4Ti3O12粉体在熔盐中的生长机理。 相似文献
17.
Kangkang Yang Xiangyu Li Congli Sun Wei Song Wenyu Zhao Qingjie Zhang 《Advanced functional materials》2024,34(30):2315886
n-type Mg3(Sb, Bi)2 has excellent room temperature thermoelectric performance, which is, however, severely restricted by the negatively charged Mg vacancies that significantly deteriorate the carrier mobility. Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials; In Mg-rich areas, interstitial Mn dominates which effectively reduces the migration and accumulation of Mg vacancies, while in Mg poor areas, interstitial Mn switches to substitutional sites that directly compensate for the negative charge. All the Mn centers possess Jahn–Teller inactive positions, leading to an ultra-stable room temperature thermoelectric performance with a leading ZT up to 0.97. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2-based alloys toward high room-temperature thermoelectric performance. 相似文献
18.
Hyunyong Cho Song Yi Back Naoki Sato Zihang Liu Weihong Gao Longquan Wang Hieu Duy Nguyen Naoyuki Kawamoto Takao Mori 《Advanced functional materials》2024,34(44):2407017
Thermoelectric cooling materials based on Bi2Te3 have a long history of unsurpassed performance near room temperature. Recently, research into price-competitive Mg3(Bi, Sb)2-based materials are focused on replacing traditional cooling materials. Here, the thermoelectric properties of Mg3.2Bi1.998−xSbxTe0.002Cu0.005 (x = 0.0, 0.1, 0.2, 0.3, 0.4, and 0.5) polycrystalline compounds are investigated. In all temperature regions, electrical resistivity and Seebeck coefficient are increased with Sb concentration. The electronic transport properties of Sb-alloyed compounds are maximized by synergistically combined band engineering approaches such as band structure change caused by lattice strain, increased electronic density of states, and chemical potential shift, leading to exceptionally high-power factor values of over 3.0 mW m−1 K−2 at room temperature. Furthermore, with increasing Sb content, thermal conductivity values are systematically reduced due to the promotion of alloy scattering of phonons and suppression of the bipolar contribution. Consequently, these multiple approaches significantly enhance thermoelectric performance, resulting in an enhancement of thermoelectric figure-of-merit zT above 1.1 at 348–423 K. Additionally, a zTavg of 1.1 is recorded at 300–450 K, making it an unrivaled value among the reported n-type Mg3Bi2-based thermoelectric materials. Overall, this work demonstrates that Mg3Bi2-based materials are more promising for thermoelectric cooling applications compared to Bi2Te3-based materials. 相似文献
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20.
《Advanced Electronic Materials》2017,3(10)
To bring current thermoelectric (TE) materials achievement into a device for power generation, a full understanding of their dynamic behavior under operating conditions is needed. Here, an in operando study is conducted on the high‐performance TE material β‐Zn4Sb3 under large temperature gradient and thermal cycling via a new approach using in situ transmission electron microscopy combined with characterization of the TE properties. It is found that after 30 thermal cycles in a low‐pressure helium atmosphere the TE performance of β‐Zn4Sb3 is maintained with the figure of merit, zT , value of 1.4 at 718 K. Under a temperature gradient of 380 K (T hot = 673 K and T cold = 293 K) operating for only 30 h, zinc whiskers gradually precipitate on the cold side of the β‐Zn4Sb3 leg. The dynamical evolution of Zn in the matrix of β‐Zn4Sb3 is found to be the source that leads to a high zT value by lowering of the thermal conductivity and electrical resistivity, but it is also the failure mechanism for the leg under these conditions. The in operando study brings deep insight into the dynamic behavior of nanostructured TE materials for tailoring future TE materials and devices with higher efficiency and longer durability. 相似文献