共查询到19条相似文献,搜索用时 187 毫秒
1.
Al2O3薄膜常用于有机电子器件的稳定化封装.除了薄膜的水气渗透率特性,薄膜的表面粗糙度、润湿性和折射率等性能也会影响薄膜的最终封装效果.采用自制等离子增强原子层沉积(PE-ALD)系统在低温下成功制备了Al2O3薄膜,研究了沉积功率和退火参数对Al2O3薄膜微观形貌和性能的影响.结果表明,Al2O3薄膜的生长速率和折射率随沉积功率的增加分别呈现先增加后下降和不断增加的趋势,当沉积功率为1 800 W时,薄膜的线性生长速率达到0.27 nm/cycle,远高于传统热原子层沉积技术的沉积速率.退火处理不会改变Al2O3薄膜晶态,但改善了薄膜的表面粗糙度,降低了接触角和有机基团红外强度.得到了最佳的PE-ALD薄膜制备工艺条件,实现了对有机发光二极管器件的有效封装. 相似文献
2.
脉冲激光沉积Al膜的沉积模式及沉积速率研究 总被引:3,自引:0,他引:3
为了给脉冲激光沉积(PLD)法沉积大面积均匀薄膜的应用提供相关的理论依据,以纯铝块作为靶材,采用PLD法在同轴和旁轴两种模式下对比研究了Al薄膜的厚度均匀性。同时,在旁轴的沉积模式下分别研究了基片温度、激光功率和重复频率对A l薄膜沉积速率的影响规律。实验结果表明,采用PLD方法在旁轴的沉积模式下获得的Al薄膜的厚度更加均匀。随着基片温度的增加,薄膜的沉积速率反而降低。升高激光功率,薄膜的沉积速率也随之提高。而在激光重复频率的变化过程中,Al薄膜的沉积速率有一最大值。 相似文献
3.
研究通过等离子增强原子层沉积(PEALD)在不同沉积温度下生长的AlN温度对其特性的影响。前驱体是NH3和TMA,在300℃、350℃和370℃沉积温度下分别沉积了200、500、800、1 000、1 500周期的AlN层,并讨论了AlN薄膜的生长速率、结晶化和表面粗糙度。结果表明,在300~370℃范围内,随着温度的上升薄膜的沉积速率和结晶化增加,而薄膜表面粗糙度减小。 相似文献
4.
5.
6.
7.
8.
潘永强陈佳 《激光与光电子学进展》2017,(11):444-449
采用光刻技术、刻蚀技术和等离子体增强化学气相沉积(PECVD)技术,在线阵掩模微结构表面沉积了SiO2和Si3N4薄膜,研究了线阵掩模的宽度和厚度,以及薄膜的厚度和沉积速率对SiO2和Si3N4薄膜复形性的影响,制备得到了具有良好微结构形貌的微结构滤光片阵列。结果表明,薄膜沉积速率越大,薄膜的复形性越好;掩模厚度和薄膜沉积厚度的增加会导致薄膜的复形性变差;SiO2薄膜的复形性优于Si3N4薄膜的。 相似文献
9.
10.
采用脉冲激光沉积法(PLD)在单晶硅基底上制备了WSx固体润滑薄膜。利用X射线能谱仪(EDS)、扫描电子显微镜(SEM)、X射线衍射仪(XRD)对薄膜的成分、形貌和微观结构进行了分析,采用球盘式磨损试验机在大气(相对湿度为50%~55%)环境下评价薄膜的摩擦学特性。结果表明:薄膜中S和W的原子数分数比(简称S/W比)在1.05~3.75之间可控,摩擦系数为0.1~0.2;S/W比高于2.0时薄膜成膜质量和摩擦系数显著恶化。正交试验法得出影响薄膜S/W比的因素主次顺序分别是气压、温度、靶基距和激光通量;最优工艺参数是温度150℃、靶基距45mm、激光通量5J/cm2、气压1Pa,可获得结构致密、成分接近化学计量比的WSx薄膜。 相似文献
11.
YANG Guowei 《半导体光子学与技术》1995,(Z1)
DependenceofsurfacemorphologyofCVDdiamondfilmsondepositionconditionsYANGGuowei(Dept.ofPhys.,XiangtanUuiversity,Xiangtan411105... 相似文献
12.
《Materials Science in Semiconductor Processing》2012,15(5):564-571
Nanocrystalline lead sulfide (PbS) thin films were synthesized on glass substrates using microwave-assisted chemical bath deposition (CBD) method. Various deposition periods of time ranging from 30 to 120 min were used. Results demonstrated that the thickness of the thin films increased with longer deposition time. X-ray diffraction (XRD) measurement revealed that all thin films have cubic rock salt (NaCl) type structure. The surface morphology studied using scanning electron microscopy (SEM) showed that the films have uniform surface morphology over the entire substrate and were of good quality. AFM images confirm that the films have a smooth surface with good adherence to the substrate, a narrow particle size distribution, and that the surface roughness increased with increasing deposition time. Energy gap Eg decreases as the deposition time increases. Electrical measurements revealed that all films were p-type and that the conductivity decreased as the deposition time increased. 相似文献
13.
YANGGuowei MAOYude 《半导体光子学与技术》1995,1(1):88-92
The diamond films have been deposited by the hot filament CVD method on molybdenum substrates from the mixture reactant gas of acetone and hy-drogen.The surface morphologies of the obtained diamond films under various de-position conditions have been observed by scanning electron microscope (SEM).The experimental results strongly indicate that the surface morphologies of the re-sulting films have closely related to the deposition conditions,i.e.,reaction pres-sure.For molybdenum substrates,under the lower reaction pressure the surface morphologies of the grains comprising the resulting films mainly display the small single crystal cubo-octahedron and double small crystal cubo-octahedron;under the higher reaction pressure ,the surface morphologies mainly display the large cauliflower-like .These results show that there are various crystal habits for CVD diamond under various deposition conditions . 相似文献
14.
G. S. Sudhir H. Fujii W. S. Wong C. Kisielowski N. Newman C. Dieker Z. Liliental-Weber M. D. Rubin E. R. Weber 《Journal of Electronic Materials》1998,27(4):215-221
Thin films of AlN and GaN were grown by pulsed laser deposition on c-plane sapphire substrates. It is demonstrated that the
structure and surface morphology of layers can actively be controlled by adjusting the nitrogen partial pressure during the
growth. The observed trends in the structural quality of the thin films can be attributed to the changes in the surface diffusion
of adatoms. It is argued that the surface diffusion of adatoms can be influenced by the collisions between the nitrogen gas
molecules and the activated atoms which can reduce the kinetic energy of activated atoms and increase the rate of formation
of immobile surface dimers. Through these nitrogen pressure related effects, thin films with microstructure ranging from crystalline
to amorphous can be produced. The observed similar impact of nitrogen pressure on the growth of GaN and AlN thin films indicates
that a pressure assisted growth procedure is generally applicable to design the surface morphology of group III-nitride thin
films. A minimal surface root mean square roughness of 0.7 nm for amorphous AlN is obtained which compares well with the substrate
roughness of 0.5 nm. Rutherford backscattering spectroscopy of thin films of GaN and AlN showed a large incorporation of oxygen
which was found to reduce the lattice constants of GaN and AlN. 相似文献
15.
用射频等离子体增强化学气相沉积(RF-PECVD)法沉积氟化类金刚石(F-DLC)薄膜。俄歇电子能谱分析表明,制备的碳膜为典型的类金刚石结构。接触角测量仪测量了沉积在玻璃基底上的F-DLC薄膜的接触角,采用傅里叶红外分析了薄膜价键结构,原子力显微镜分析了薄膜表面粗糙度;结果表明,氟的掺入稳定了弱极化基团CF2的含量,同时使得薄膜表面平整,薄膜与水的浸润性变差,改善了薄膜疏水性能。研究表明,流量比、沉积温度、退火温度、沉积功率对接触角的影响是先增后减,这主要是由于CF2含量和薄膜表面粗糙度的变化造成的。 相似文献
16.
Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ~550 nm and electrical resistivity value of 0.57 × 10?4 Ω cm. 相似文献
17.
斜角入射沉积TiO_2薄膜的光学特性和表面粗糙度 总被引:3,自引:0,他引:3
采用电子束热蒸发技术在K9玻璃基底上以不同的沉积入射角沉积了单层TiO2薄膜,研究了不同入射沉积角沉积的TiO2薄膜的光学特性、填充密度和表面粗糙度,并比较了不同膜层厚度下薄膜表面粗糙度与入射沉积角之间的关系。研究结果表明,随着入射沉积角的增加,TiO2薄膜的透射率增加,透射峰值向短波移动,薄膜的填充密度从入射沉积角0°时的0.801降低到入射沉积角为75°时的0.341;薄膜的表面粗糙度随着入射沉积角的增加而增加,当入射沉积角为75°时,薄膜的表面粗糙度略高于基底的表面粗糙度。在沉积入射角不变时,随着膜层厚度的增加,膜层的表面粗糙度降低。 相似文献
18.
Polycrystalline diamond films have been selectively deposited on a silicon surface. A novel process was developed which exposes
a patterned, scratch damaged silicon area, surrounded by SiO2, to a high pressure microwave plasma of hydrogen containing methane. The hydrogen plasma dissociates the methane injected
into the reaction chamber, resulting in diamond deposition, which occurs only on the exposed silicon. Under the process conditions
described in this work, some in situ plasma etching of the oxide is observed, resulting in little or no growth of diamond
in unwanted areas, and further enhancing the selectivity. A variety of patterns and structures have been fabricated. Raman
spectroscopy confirmed the films were diamond. 相似文献
19.
Tanaka H. Uchida H. Ajioka T. Hirashita N. 《Electron Devices, IEEE Transactions on》1993,40(12):2231-2236
The effect of surface roughness of Si3N4 films on time-dependent dielectric breakdown (TDDB) characteristics of SiO2/Si3N4/SiO2 (ONO) stacked films was investigated. The surface roughness of Si3N 4 films-was found to become higher with increasing deposition temperature and to cause the degradation of TDDB characteristics of ONO films in DRAMs. A local thinning of ONO films, evaluated from the TDDB characteristics, agreed with the surface roughness measured by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). Dependence of time to breakdown of ONO films on the deposition conditions was interpreted by electric field intensification due to the surface roughness of Si3N4 films 相似文献