基于平衡技术的微带低通滤波器版图优化设计

微带线结构的不连续性,使反射损耗和插入损耗较大,影响滤波器性能。利用平衡法提升滤波器并联分支中较低的特性阻抗,达到降低微带线宽度的目的,从而均衡整个滤波器的宽度,使版图仿真优化。以一个5阶切比雪夫微带低通滤波器设计为例,仿真结果表明,滤波器通带内反射损耗从-9.566dB降低到-15.837dB,插入损耗从0.679dB降低到0.322dB,与直接采用Richards变换和Kuroda规则设计微带低通滤波器相比,该方法能缩短滤波器设计周期,获得满意的滤波器性能。     

Miniaturised microstrip bandpass filters based on Moore fractal geometry

This paper presents new microstrip bandpass filter design topologies that consist of dual edge-coupled resonators constructed in the form of Moore fractal geometries of second and third iteration levels. The space-filling property for proposed fractal filters has found to produce reduced size shapes in accordance with sequential iteration levels. These filters have been prepared for ISM band applications at a centre frequency of 2.4 GHz using a substrate with a dielectric coefficient of 10.8, dielectric thickness of 1.27 mm and metallisation thickness of 35 µm. The output responses of each fractal bandpass filter have been determined by a full-wave-based electromagnetic simulator Sonnet software package. Simulated and experimental results are approximately compatible with each other. These responses clarify that these fractal filters have good transmission and return loss characteristics with blocked higher harmonics in out-of-band regions.     

硅基参数对微带带通滤波器传输特性的影响

随着半导体工艺技术和IC设计技术的飞速发展,硅基滤波器技术也不断更新换代。滤波器传输性能取决于基片介电常数、损耗和厚度等参数。研究了硅基不同厚度、损耗以及掺杂浓度等情况下,中心频率为5.75 GHz附近的平行耦合微带带通滤波器的传输系数和反射系数的频率响应特性。结果表明:当微带线带通滤波器PCB版图确定时,滤波器正向传输系数S21随着基片材料厚度的减小,通频带宽变窄;随着硅掺杂浓度的增加,通带向低频方向偏移;当正切损耗为0.000 4,0.004和0.04时,中心频率处S21分别为-14.18,-2.08和-0.81 dB。理论结果与实验数据进行比较,两者符合较好。     

A wideband linear U-slot microstrip patch antenna array for wireless application

Microstrip antennas suffer an inherent disadvantage of narrow impedance bandwidth, normally within 5%. In this article, a single layer linear U-slot microstrip patch antenna array is designed, fabricated and characterised. The measured results agree well with the simulated, showing an enhanced impedance bandwidth (voltage standing wave ratio < 2) of 10.6%, ranging from 5.35 to 5.95 GHz, on an FR4 substrate. The antenna array has high efficiency and gain. Only a pair of sidelobes appear in the E plane radiation pattern. The reported linear array design can provide a method of expanding to 4 × N antenna array for satellite to ground communication operating at C band.     

Microstrip EHF Butler Matrix Design and Realization

This paper describes the design and realization of an extra high frequency band 8 ° 8 microstrip Butler matrix. Operation at 36 GHz is achieved with a frequency bandwidth exceeding 400 MHz. The circuit is implemented on a bi‐layer microstrip structure using conventional manufacturing processes. This planar implementation of a Butler matrix is a key component of a switched beam smart antenna with printed antenna elements integrated on‐board. Conception details, simulation results, and measurements are also given for the components (hybrid couplers, cross‐couplers, and vertical inter‐connections) used to implement the matrix.     

Cantilever RF-MEMS for monolithic integration with phased array antennas on a PCB

This article presents the development and operation of a novel electrostatic metal-to-metal contact cantilever radio-frequency microelectromechanical system (RF-MEMS) switch for monolithic integration with microstrip phased array antennas (PAAs) on a printed circuit board. The switch is fabricated using simple photolithography techniques on a Rogers 4003c substrate, with a footprint of 200 µm × 100 µm, based on a 1 µm-thick copper cantilever. An alternative wet-etching technique for effectively releasing the cantilever is described. Electrostatic and electromagnetic measurements show that the RF-MEMS presents an actuation voltage of 90 V for metal-to-metal contact, an isolation of ?8.7 dB, insertion loss of ?2.5 dB and a return loss of ?15 dB on a 50 Ω microstrip line at 12.5 GHz. For proof-of-concept, a beam-steering 2 × 2 microstrip PAA, based on two 1-bit phase shifters suitable for the monolithic integration of the RF-MEMS, has been designed and measured at 12.5 GHz. Measurements show that the beam-steering system presents effective radiation characteristics with scanning capabilities from broadside towards 29° in the H-plane.     

宽频带线阵天线的设计

设计了具有宽频带特性的双层结构3单元直线阵微带天线。综合采用双层结构和阻抗匹配网络两种方法来展宽天线的频带,天线在驻波比小于1.6时的相对带宽达13.3%。采用边缘微带线馈电方式,降低了天线纵向结构尺寸;上层贴片悬置,更有利于天线的封装和维护。设计在满足天线宽频带要求和结构简单可靠两方面取得了较好的平衡。     

人体中心网络微带缝隙天线设计和研究

设计了一款小型微带缝隙天线.通过电磁仿真软件CST的参数优化功能,对微带缝隙天线缝隙的长度、宽度、馈电点等参数进行优化,得到了工作频率为2.45GHz,带宽100 MHz、阻抗匹配良好、辐射效率较高的用于人体中心网络的微带缝隙小型天线,根据仿真设计,制作了天线,测试结果和仿真结果吻合较好.     

一种新颖开槽切角圆极化微带天线单元的设计

为了简化方形切角圆极化微带天线单元的设计流程,提出了一种新颖的开槽切角圆极化微带天线单元形式。利用在微带天线单元上开矩形槽的方法,避免了调试切角圆极化单元的谐振频点和轴比时的反复迭代过程,缩短了调试时间。分析了矩形槽的不同宽度和深度对阻抗和轴比的影响,并通过仿真设计出一款性能良好的微带天线单元。单层微带天线单元仿真的最终阻抗相对带宽(S11 <-10 dB)为2. 05% (1. 980 ~ 2. 021 GHz);仿真的最终轴比相对带宽(AR<3 dB)为0. 50%(1. 995 ~2. 005 GHz)。加工了天线单元实物并进行测试,实测的阻抗相对带宽(S11 <-10 dB)为2. 05%(1. 975 ~2. 016 GHz);实测的轴比相对带宽(AR<3 dB)为0. 50% (1. 990 ~ 2. 000 GHz)。实测结果与仿真结果具有良好的一致性,验证了设计的正确性。     

基于高阻抗表面PBG结构微带天线的设计与分析

以高介电常数介质为基底,利用辐射贴片开槽和微带馈电技术,设计了一款尺寸仅为16mm×12.45mm的小型微带天线。通过在此天线微带贴片周围加载高阻抗表面型光子晶体,有效抑制了表面波,改善了以高介电常数介质为基底的贴片天线的性能,实现了一款多频小型化PBG天线。HFSS仿真结果表明,加载高阻抗表面结构后的微带天线出现了三个谐振频点,分别为2.74、2.86和3.80GHz,其对应的增益分别达到6.02、8.38和5.69dB。所设计的光子晶体天线物理尺寸较小,方向性良好且具有多频特性,因此可为实际通信天线的应用提供参考。     

一种新型毫米波集成波导微带转换的分析与设计

提出一种新型集成于单层微带基片的毫米波集成波导微带转换 ,由一圆形微带谐振器、微带共面波导探针组成。利用全波分析软件对该转换器进行了分析计算、优化设计。测试了波导微带转换实物 ,结果表明 ,在Ka波段在 1 GHz频带内 ,该波导微带转换具有较低的插入损耗 ( <0 .4d B)和反射损耗 ( <-1 4d B)。可满足相关毫米波微带集成电路系统的应用要求。     

一种应用于ITS 的三频微带天线的设计*

设计了一种应用于智能交通系统(ITS)的三频微带天线,分别工作在GPS(1. 575GHz)、WLAN(2. 45GHz)以及DSRC(5. 8GHz)。采用堆叠结构实现大的双频比,其中顶层贴片工作在DSRC,底层贴片通过边缘处加 载四个相等矩形槽来实现双频。通过在方形贴片的一个对边边缘处加载两个相等的矩形槽来实现圆极化。通过调 整对角线上馈电点位置、平移顶层贴片以及改变底层贴片上的过孔大小来实现频带内的阻抗匹配。仿真和测试结 果表明吻合良好,该天线在三个频段内有着良好的阻抗匹配、轴比以及辐射方向图,能够满足设计要求。     

Design of 10 dB 90° branch line coupler using microstrip linewith defected ground structure

The authors present a 10 dB 90° branch line coupler operating at 1.8 GHz and having a defected ground structure (DGS), a type of periodic structure realised by etching on the ground plane under the microstrip line. Owing to the additional effective inductance of the DGS, the characteristic impedance of the microstrip line is increased for the same width of conductor. A microstrip line of 150 Ω of characteristic impedance with 1 mm conductor width is realised by adding the DGS, while 1 mm corresponds to 82 Ω of conventional microstrip line on the RT/Duroid 5880 substrate with 2.2 dielectric constant and 31 mils of thickness. It is shown that a 90° branch-line 10 dB coupler can be fabricated using the 150 Ω line with DGS. Its measured performances are in good agreement with the predicted results     

基于P型交指结构的星载微带电路小型化设计

现有星载微波系统中大量使用了各种形式的微带电路,但由于微带电路在低频率时尺寸较大,不利于星载产品小型化,因此提出了一种基于交指结构的微带电路小型化设计方法。该方法采用两个交指电容和高特征阻抗微带线构造的仔型结构替代原有微带结构,从而减小微带电路尺寸。对该方法进行分析并给出了设计理论,进行了仿真及实测验证,并成功应用到多种不同形式的微带电路中。最后给出了两个已验证的实例,一个基于FR4材料的2.4 GHz 功分器和一个基于RO4003C的1.4 GHz 耦合器。该设计方法可以在不改变电性能的基础上减少微带电路约40%的面积。     

一种小型宽带双极化5G基站天线

设计了一种适用于2G/3G/4G/5G移动通信的小型宽带±45°双极化基站天线。该天线由2对偶极子辐射片、2条微带馈线和1块反射板组成,辐射臂和微带馈线采用双面印刷工艺印刷在0.8 mm厚的FR4板,并固定放置于开有圆形槽的反射板上。对天线实物进行加工测试,测试结果表明,端口1工作频段为1.82~3.60 GHz,端口2工作频段为1.64~3.41 GHz;工作频段内,反射系数小于-10 dB,端口隔离度优于18 dB;交叉极化比在视轴方向大于17 dB,±60°方向大于15 dB;半功率波束65°左右,前后比优于18 dB,测试和仿真结果较吻合。所设计天线带宽宽,尺寸小,且制作工艺简单,成本低廉,适合批量生产,应用于5G移动通信基站中。     

A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 µm gate‐length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4‐inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of ?16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W‐band.     

A simple design of planar microstrip antenna on composite material substrate for Ku/K band satellite applications

A straight forward design of rectangular slotted microstrip planar antenna fed by 50 ohm microstrip line is proposed for Ku/K band satellite applications. The radiating patch of the antenna occupies an area of 17 × 17 mm² and fabricated on 1.0 mm‐thick ceramic filled bioplastic composite material substrate whose dielectric constant (ε_r ) is 10.0. The dual resonant square‐shaped antenna has been formed by inserting four arc shape slots at the corners with the combination of circle and square and wide square shape slot at the center. The results from the measured data show that the antenna has a lower resonant mode impedance bandwidth for S11 < −10 dB is of 18.4% (11.67–14.05 GHz) and upper resonant mode bandwidth is of 8.2% (18.19–19.75 GHz) centered at 12.94 GHz and 19.04 GHz, respectively. The antenna prototype has achieved maximum gains of 3.1 dBi and 4.13 dBi with average radiation efficiencies of 75.3% and 86.4% for the lower band and the upper band, respectively. The numerical data analyses of both the measured and simulated results show relatively good agreement. Moreover, the consistent and symmetrical radiation patters of the proposed antenna make it suitable candidate for the Ku/K band satellite applications. Copyright © 2015 John Wiley & Sons, Ltd.     

Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures

A microwave field-effect transistor with nonalloyed ohmic contacts is fabricated using the technique of regrowing a heavily doped region under the contact metallization by molecular beam epitaxy through a preliminarily formed dielectric mask. The fabricated field-effect transistor with a gate length of 0.18 µm and a total width of 100 µm has a current–amplification cutoff frequency of 66 GHz and ohmic contact resistivity of 0.15-0.18 Ω mm.     

Novel Bumping Material for Solder‐on‐Pad Technology

A novel bumping material, which is composed of a resin and Sn3Ag0.5Cu (SAC305) solder power, has been developed for the maskless solder‐on‐pad technology of the fine‐pitch flip‐chip bonding. The functions of the resin are carrying solder powder and deoxidizing the oxide layer on the solder power for the bumping on the pad on the substrate. At the same time, it was designed to have minimal chemical reactions within the resin so that the cleaning process after the bumping on the pad can be achieved. With this material, the solder bump array was successfully formed with pitch of 150 µm in one direction.     

A New Automatic Compensation Network for System‐on‐Chip Transceivers

This paper proposes a new automatic compensation network (ACN) for a system‐on‐chip (SoC) transceiver. We built a 5 GHz low noise amplifier (LNA) with an on‐chip ACN using 0.18 µm SiGe technology. This network is extremely useful for today's radio frequency (RF) integrated circuit devices in a complete RF transceiver environment. The network comprises an RF design‐for‐testability (DFT) circuit, capacitor mirror banks, and a digital signal processor. The RF DFT circuit consists of a test amplifier and RF peak detectors. The RF DFT circuit helps the network to provide DC output voltages, which makes the compensation network automatic. The proposed technique utilizes output DC voltage measurements and these measured values are translated into the LNA specifications such as input impedance, gain, and noise figure using the developed mathematical equations. The ACN automatically adjusts the performance of the 5 GHz LNA with the processor in the SoC transceiver when the LNA goes out of the normal range of operation. The ACN compensates abnormal operation due to unusual thermal variation or unusual process variation. The ACN is simple, inexpensive and suitable for a complete RF transceiver environment.