Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements

Extended X-ray absorption fine structure (EXAFS) analysis has been used to determine the structural parameters of stoichiometric, amorphised GaAs. Relative to a crystalline sample, the nearest-neighbor bond length and Debye–Waller factor both increased for amorphous material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. Similar trends were evident for amorphised Ge excluding the coordination number which did not deviate from the crystalline value. The structural parameters of amorphised GaAs and Ge have been discussed in terms of the multi- and mono-elemental nature, respectively, of the two materials.     

Study of the permeability of thin films of a-Si:H using MeV ion beams

MeV heavy ion irradiation of hydrogenated plasma-deposited silicon nitride induces formation of the volatile molecules H₂ and N₂ inside the material. This type of nitride appears permeable for these molecules and they effuse at relatively low temperature. These effusing molecules are used to study the low temperature permeation in a 100 nm hydrogenated amorphous silicon layer, deposited onto the nitride. Upon irradiation of the double layer stack with 43.3 MeV Ag ions, appearance of D₂ and N₂ from the bottom deuterated silicon nitride layer in the vacuum does not take place up to an ion fluence of 3×10¹² ions/cm². This shows that the 100 nm plasma-deposited hydrogenated amorphous silicon top layer is initially not permeable for D₂ and N₂ molecules.     

Ion beam induced nucleation in amorphous GaAs layers during MeV implantation

To investigate the nonlinear dose dependence of the thickness of the recrystallized layer during ion beam induced epitaxial recrystallization at amorphous/crystalline interfaces GaAs samples were irradiated with 1.0 MeV Ar⁺, 1.6 MeV Ar⁺ or 2.5 MeV Kr⁺ ions using a dose rate of 1.4 × 10¹² cm⁻² s⁻¹ at temperatures between 50°C and 180°C. It has been found that the thickness of the recrystallized layer reaches a maximum value at T_max = 90°C and 135°C for the Ar⁺ and Kr⁺ implantations, respectively. This means that the crystallization rate deviates from an Arrhenius dependence due to ion beam induced nucleation and growth within the remaining amorphous layer. The size of the crystallites depends on the implantation dose. This nucleation and growth of the crystallites disturbes and at least blocks the interface movement because the remaining surface layer becomes polycrystalline. Choosing temperatures sufficiently below T_max the thickness of the recrystallized layer increases linearly with the implantation dose indicating that the irradiation temperature is too low for ion induced nucleation.     

Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

Low energy nitrogen (N) ions were irradiated during the epitaxial growth of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) method as a function of N⁺ ion acceleration energy (E_a) and N⁺ ion beam current density (I_N). E_a was varied from 70 to 170 eV I_N from 900 pA/cm² to 75 nA/cm². GaAs growth rate was fixed to 1 μm/h. In 2 K photoluminescence (PL) spectra of the samples with I_N = 3 nA/cm² and E_a = 70–100 eV, two sharp emissions at 1.508 eV (X₁) and 1.495 eV (X₂), which have been attributed to the emissions of excitons bound to isolated N atoms, and another one at 1.443 eV (X₅) were observed. These results show that nitrogen (N) atom in GaAs becomes optically active as an isoelectronic impurity at least in as-grown condition. For N⁺ ion-irradiated samples with rather high I_N, e.g., with I_N = 75 nA/cm² and E_a = 100 eV, a broad emission together with multiple sharp ones were observed after furnace annealing at 750°C which were ascribed to emissions of excitons bound to nitrogen-nitrogen (N---N) pairs.     

Damage produced in magnesium aluminate spinel by high energy heavy ions including fission products of fission energy: microstructure modifications

The radiation stability of spinel MgAl₂O₄ against the impact of beams of a fission product at fission energy (70 MeV iodine) and at different fluences was investigated using Transmission Electron Microscopy (TEM). Specimens prethinned before irradiation were analysed by TEM and irradiated bulk specimens were investigated using cross-sectional TEM. Tracks were observed in pre-thinned specimens. Partial amorphisation was observed for the irradiation at the highest fluence. Recrystalization of the amorphous region, induced by the microscope electron beam was observed. A threshold value of 6 keV nm⁻¹ was determined for the amorphization of spinel under the above mentioned irradiation conditions. Moreover, profile measurements of the irradiated areas confirmed the large swelling values for this material when irradiated with fission products of fission energy. A thermal spike model was used to calculate the damage threshold for spinel using experimentally measured heavy-ion track radii, including results for other ions of up to very high energies. These accelerator-based fission product irradiations revealed an unexpected poor radiation stability, in contrast to the known good behaviour of the spinel against neutron or alpha particle damage.     

Characteristics of a nitrogen-jet system in KUR-ISOL

The basic characteristics of a N₂-jet system coupled with a surface-ionization type ion source have been investigated at KUR-ISOL. The yields of transported activities and ionized ions have been measured under various conditions for both the He- and N₂-jets. The effects of N₂ gas upon the ionization and skimmer efficiency have been investigated. It was found that N₂ gas has almost no effect upon the ionization efficiency, but causes poorer skimmer efficiency than He gas owing to the large opening angle of aerosol particles at the outlet of a capillary. A mixture of He and N₂ gases was also tested.     

Study of ion beam induced swelling in fluorite as an inert matrix model

As a model material of fluorite type structure, single crystals of CaF₂ were irradiated with various heavy ions (from ³²S to ²⁰⁹Bi) of specific energies between 1 and 12 MeV u⁻¹. Using a profilometer, out-of-plane swelling was measured by scanning over the border line between irradiated and virgin areas of the sample surface. The step height as a function of the ion fluence exhibits a linear increase in the initial phase and saturates at high fluences. Track radii contributing to the swelling effect are deduced. Above a critical energy loss of about 5 keV nm⁻¹, the initial swelling rate per incident ion shows two separated regimes. Finally, the response of CaF₂ submitted to high electronic energy loss is discussed in combination with earlier track observations by transmission electron microscopy.     

Argon irradiation damage at a Cu/Al2O3 interface for different alumina structures

The evolution of damages at a Cu/Al₂O₃ device interface after Ar⁺ irradiation, depending on alumina structure, and the effect of surface roughness on sputtering have been studied. A polycrystalline Cu/Al₂O₃ bilayer and polycrystalline Cu on amorphous alumina were irradiated with 400 keV Ar⁺ ion beam at doses ranging from 5 × 10¹⁶ to 10¹⁷ Ar⁺/cm² at room temperature. The copper layer thicknesses were between 100 and 200 nm. RBS analysis was used to characterize the interface modification and to deduce the sputtering yield of copper. The SEM technique was used to control the surface topography. A RBS computer simulation program was used to reproduce experimental spectra and to follow the concentration profile evolutions of different elements before and after ion irradiation. A modified TRIM calculation program which takes into account the sputtering yield evolution as well as the concentration variation versus dose gives a satisfactory reproduction of the experimental argon distribution. The surface roughness effect on sputtering and the alumina structure influence at the interface on mixing mechanisms are discussed.     

Volume added surface barrier discharge plasma excited by bipolar nanosecond pulse power in atmospheric air: optical emission spectra influenced by gap distance

In this paper, volume barrier discharge with different gap distances is added on the discharge border of high-voltage electrode of annular surface barrier discharge for generating volume added surface barrier discharge (V-SBD) excited by bipolar nanosecond high-voltage pulse power in atmospheric air. The excited V-SBDs consist of surface barrier discharge (d=0 mm) and volume added surface barrier discharges (d=2 mm and 3 mm). The optical emission spectra are recorded for calculating emission intensities of N₂ (C ³Ⅱ_u →B³Π_g ) and N₂⁺ (B ²Σ_u⁺ → X ²Σ_g⁺ ), and simulating rotational and vibrational temperatures. The influences of gap distance of V-SBD on emission intensity and plasma temperature are also investigated and analyzed. The results show that d=0 mm structure can excite the largest emission intensity of N ₂ (C ³ Π_u →B ³Π_g ), while the existence of volume barrier discharge can delay the occurrence of the peak value of the emission intensity ratio of N₂⁺ (B ²Σ_u⁺ → X ²Σ_g⁺ )/N ₂(C³Π_u →B³Π_g ) during the rising period of the applied voltage pulse and weaken it during the end period. The increasing factor of emission intensity is effected by the pulse repetition rate. The d=3 mm structure has the highest threshold voltage while it can maintain more emission intensity of N₂(C³ Π _u →B ³Π_g ) than that of d=2 mm structure. The structure of d=2 mm can maintain more increasing factor than that of the d=3 mm structure with varying pulse repetition rate. Besides, the rotational temperatures of three V-SBD structures are slightly affected when the gap distance and pulse repetition rate vary. The vibrational temperatures have decaying tendencies of all three structures with the increasing pulse repetition rate.     

Radiation-induced effects in pyrochlores and nanoscale materials engineering

Pyrochlore materials, A₂B₂O₇, encompass a wide range of compositions and are technologically important for energy and environmental issues. For example, they may be used as ionic conductors in solid oxide fuel cells or nuclear waste forms for the storage of actinides, particularly Pu. Here, the recent progress in understanding ion beam irradiation-induced phenomena in pyrochlore compounds is briefly reviewed with a focus on the ion beam-induced crystalline-to-amorphous and pyrochlore-to-fluorite structural transitions. Systematic ion irradiation studies of lanthanide pyrochlores with B = Ti, Zr and Sn have indicated that the radiation response of the pyrochlore compounds is highly dependent on compositional changes. Both the ionic size and cation electronic configurations (e.g. bond-types) affect the structural distortion from the ideal fluorite structure and thus the response of pyrochlore-structure types to ion beam irradiation. An ion beam-induced pyrochlore-to-fluorite structural transition occurs in all irradiated pyrochlore compositions, and the independent kinetics of the cation and anion disordering processes has been discussed. Numerous novel nanostructures have been created by utilizing the ion beam-induced amorphization, order–disorder transition and phase decomposition, such as amorphous and disordered nano-domains, perfectly lattice matched two-dimensional nanolayers, self-organized ripple structures, metallic nanoparticles and nanowires.     

氧化铜气凝胶的制备与结构表征

以CuSO₄·5H₂O为前驱体,聚丙烯酸为分散剂,采用溶胶 凝胶法制备出铜基复合气凝胶,该气凝胶经高温热处理后得到氧化铜气凝胶。通过场发射扫描电镜（FESEM）、高分辨透射电镜（HRTEM）、X射线衍射（XRD）以及N₂吸附对气凝胶的结构进行了表征。结果表明：铜基复合气凝胶是由大量球状颗粒堆积而成的;经不同温度热处理,气凝胶逐渐由三维网络状结构转变为致密结构。XRD谱表明,该材料为无定形态,随处理温度的升高,气凝胶的晶型不断变化,并最终变为氧化铜气凝胶。N₂吸附结果表明,经不同温度处理后,气凝胶样品具有较高的比表面积。     

Effect of N_2 and O_2 on OH radical production in an atmospheric helium microwave plasma jet

UV-pulsed laser cavity ringdown spectroscopy of the hydroxyl radical OH(A–X)(0–0)band in the wavelength range of 306–310 nm was employed to determine absolute number densities of OH in the atmospheric helium plasma jets generated by a 2.45 GHz microwave plasma source.The effect of the addition of molecular gases N_2 and O_2 to He plasma jets on OH generation was studied.Optical emission spectroscopy was simultaneously employed to monitor reactive plasma species.Stark broadening of the hydrogen Balmer emission line(H_β)was used to estimate the electron density nein the jets.For both He/N_2 and He/O_2 jets, newas estimated to be on the order of 10~(15)cm~(-3).The effects of plasma power and gas flow rate were also studied.With increase in N_2 and O_2 flow rates, netended to decrease.Gas temperature in the He/O_2 plasma jets was elevated compared to the temperatures in the pure He and He/N_2 plasma jets.The highest OH densities in the He/N_2 and He/O_2 plasma jets were determined to be 1.0?×10~(16)molecules/cm~3 at x?=?4 mm(from the jet orifice)and 1.8?×?10~(16)molecules/cm~3 at x=3 mm, respectively.Electron impact dissociation of water and water ion dissociative recombination were the dominant reaction pathways, respectively, for OH formation within the jet column and in the downstream and far downstream regions.The presence of strong emissions of the N_2~+ bands in both He/N_2 and He/O_2 plasma jets, as against the absence of the N_2~+ emissions in the Ar plasma jets, suggests that the Penning ionization process is a key reaction channel leading to the formation of N_2~+ in these He plasma jets.     

A multi-exciton model for the electronic sputtering of oxides

Three models are examined for the electronic sputtering by high energy heavy ions. It is found that the charged fraction of the sputtered particles is small (less than 10% in this study) and hence, Coulomb explosion model is unsound. According to the thermal spike model, rapid thermal quenching of the melted zone is anticipated, implying amorphisation of SiO₂ single crystal (c-SiO₂). X-ray diffraction results indicate no amorphisation of c-SiO₂, suggesting no melting. Moreover, the electronic sputtering yields of both c-SiO₂ and amorphous-SiO₂ (a-SiO₂) have been found to be the same. With these results and thermal properties of both c-SiO₂ and a-SiO₂, thermal spike model is examined further and appears to be unfavorable. A multi-exciton model is suggested for the electronic sputtering.     

Ni-MOF-74制备及其对CO的吸附性能

通过水热合成法制备了Ni-MOF-74材料，采用全自动表面积吸附仪、PXRD、扫描电子显微镜、同步热分析仪对材料的孔隙结构、晶体形貌和热稳定性进行了表征，并采用静态吸附法测定了CO、N₂、CH₄和CO₂在Ni-MOF-74上的吸附等温线；采用挤压成型方法制备了Ni-MOF-74成型材料，并研究了挤压成型后Ni-MOF-74晶体结构和微孔结构的变化及对CO的吸附性能的影响。结果表明，制得的Ni-MOF-74材料比表面积达1 212.61 m²/g ，其孔径主要集中在0.8～1.0 nm之间，对CO的吸附量远高于相同条件下对N₂和CH₄的吸附量，具有良好的热稳定性；Ni-MOF-74对CO的吸附作用力明显高于对N₂、CH₄和CO₂的；挤压成型后Ni-MOF-74的完整晶体数量明显减少，且部分微孔结构遭到破坏，成型后对CO的吸附性能明显下降。     

ESR法研究Pt催化N2H4分解机制

采用电子自旋共振谱（ESR）法，研究了酸性条件下•NH₂的转化，HClO₄体系下反应时间对溶液中自由基产生的影响、pH值对N₂H₄断键的影响以及HNO₃中N是否对溶液中的•NH₂有贡献，确定了Pt催化N₂H₄分解的反应机理。结果表明：在酸性条件下•NH₂被DMPO捕捉时反应式为•NH⁺₃+HO-H+DMPO=NH⁺₄+DMPO(•OH)，硝酸在Pt催化N₂H₄体系中不会发生断键产生•NH₂，所产生的•NH₂是由N₂H₄断键形成的；在HClO₄体系中，随着Pt催化N₂H₄反应时间的延长，N₂H₄中N-N断键的趋势逐渐减小，N-H断键的趋势逐渐增大；随pH值的增大，N₂H₄中N-N断键的速率先快速减小，pH>3后缓慢增大；Pt催化N₂H₄分解反应中N-N断键和N-H断键两种方式共存，但N-N断键占优；反应体系中N₂H₄与H^＋浓度之比决定了N-N断键生成•NH₂的速率，而•NH₂与H^＋的浓度又决定了•NH₂转化成产物的速率，这两方面共同决定了N₂H₄分解的速率。     

GaN器件辐伏同位素电池的电输出性能研究

利用⁶³Ni和3H源分别辐照两种可作为辐伏电池换能单元的GaN基PiN结型器件,其输出短路电流（I_sc）和开路电压（V_oc）分别为：对于⁶³Ni源,I_sc＝5.4 nA,V_oc＝771 mV;对于3H源,I_sc＝10.8 nA,V_oc＝839 mV。其开路电压显著优于单晶硅基器件辐伏电池的输出结果,但与理论值有一定的差距。可能是GaN材料生长过程中产生的缺陷、电极欧姆接触不良以及器件结构等原因,导致短路电流和开路电压未能达到期望值。这些是提升GaN换能单元辐伏电池的电输出性能应解决的重要技术问题。     

Structural characterization of amorphous Fe–Si and its recrystallized layers

We have synthesized amorphous Fe–Si thin layers and investigated their microstructure using transmission electron microscopy (TEM). Si single crystals with (1 1 1) orientation were irradiated with 120 keV Fe⁺ ions to a fluence of 4.0 × 10¹⁷ cm⁻² at cryogenic temperature (120 K), followed by thermal annealing at 1073 K for 2 h. A continuous amorphous layer with a bilayered structure was formed on the topmost layer of the Si substrate in the as-implanted specimen: the upper layer was an amorphous Fe–Si, while the lower one was an amorphous Si. After annealing, the amorphous bilayer crystallized into a continuous β-FeSi₂ thin layer.     

γ辐照联合热交联聚碳硅烷先驱丝热解制备高强度氮化硅陶瓷纤维

在空气气氛中采用γ射线辐照处理聚碳硅烷(PCS)先驱丝,辐照先驱丝经Ar中热交联、NH3中热解氨化、N2中高温氮化处理制备了氮化硅陶瓷纤维。研究了热交联处理对辐照先驱丝化学结构、凝胶含量、氨化陶瓷产率、抗拉强度、微观形貌及氧含量的影响。结果表明:热交联处理生成了Si—CH2—Si和Si—O—Si桥连结构,桥连结构使PCS先驱丝实现凝胶化;热交联处理不仅大幅提高了辐照PCS先驱丝的氨化陶瓷产率,还提高了热解所得氮化硅陶瓷纤维的抗拉强度,而且还降低了陶瓷纤维的氧含量;吸收剂量为1.0MGy的辐照丝经热交联处理后,其热解所得氮化硅陶瓷纤维抗拉强度达2.05GPa,氧质量分数仅为9.5%。