A low-power analog motion estimation processor for digital video coding

Analog circuit techniques can be beneficially applied to reduce the circuit complexity and power consumption of motion estimation processors for digital video encoding. However, analog circuits are sensitive to mismatch which affects motion estimation. This paper presents the design of an analog motion estimation processor which overcomes these limitations. A novel architecture is described featuring pixel reuse and input offset error cancellation. The proof-of-concept realization was fabricated in 0.8-/spl mu/m CMOS, and operates on 4/spl times/4 pixel blocks and a search area of 8/spl times/8 pixels. However, the architecture is scalable to larger block sizes and more advanced technologies. Measured results for various QCIF video sequences at 15-f/s showed excellent PSNR performance. The prototype dissipates 0.9 mW of power from a single 3-V power supply and occupies an area of 0.95 mm/sup 2/. Energy consumption is 1.51 nJ per motion vector.     

PWM digital pixel sensor based on asynchronous self-resetting scheme

In this letter, a pulse-width modulated digital pixel sensor is presented along with its inherent advantages such as low power consumption and wide operating range. The pixel, which comprises an analog processor and an 8-bit memory cell, operates in an asynchronous self-resetting mode. In contrast to most CMOS image sensors, in our approach, the photocurrent signal is encoded as a pulse-width signal, and converted to an 8-bit digital code using a Gray counter. The dynamic range of the pixel can be adapted by simply modulating the clock frequency of the counter. To test the operation of the proposed pixel architecture, an image sensor array has been designed and fabricated in a 0.35-/spl mu/m CMOS technology, where each pixel occupies an area of 45/spl times/45 /spl mu/m/sup 2/. Here, the operation of the sensor is demonstrated through experimental results.     

A digital pixel sensor array with programmable dynamic range

This paper presents a digital pixel sensor (DPS) array employing a time domain analogue-to-digital conversion (ADC) technique featuring adaptive dynamic range and programmable pixel response. The digital pixel comprises a photodiode, a voltage comparator, and an 8-bit static memory. The conversion characteristics of the ADC are determined by an array-based digital control circuit, which linearizes the pixel response, and sets the conversion range. The ADC response is adapted to different lighting conditions by setting a single clock frequency. Dynamic range compression was also experimentally demonstrated. This clearly shows the potential of the proposed technique in overcoming the limited dynamic range typically imposed by the number of bits in a DPS. A 64 /spl times/ 64 pixel array prototype was manufactured in a 0.35-/spl mu/m, five-metal, single poly, CMOS process. Measurement results indicate a 100 dB dynamic range, a 41-s mean dark time and an average current of 1.6 /spl mu/A per DPS.     

A CMOS facsimile video signal processor

A CMOS image scanning signal processor which can be used for CCITT Group-4 facsimile has been developed. To obtain high-speed processing (5 MHz) and high-precision shading distortion correction (up to 70%), hybrid architecture of digital and analog techniques and parameter setting by software are combined. Image sensor and printer interfaces and a digital processor which can do linear zooming and data format conversion are built into a chip. The 6.5/spl times/7.8-mm chip is fabricated using 2.5 /spl mu/m CMOS technology and contains 25000 transistors.     

A single-chip digital signal processor for telecommunication applications

A single-chip, software-programmable digital signal processor, intended for telecommunication applications, has been developed. The processor, fabricated with the most advanced 3 /spl mu/m n-channel E/D MOS technology, incorporates a 16/spl times/16-bit full hardware multiplier and a sophisticated bus structure to minimize bus conflicts, thus attaining the capability to implement 55 second-order filters at a sampling rate of 8 kHz with sufficient dynamic range to process PCM encoded signals. The authors describe the design concept, architecture, instructions, device design, and application techniques.     

A mixed-mode polynomial cellular array processor hardware realization

A mixed-mode cellular array processor is presented in which the processing units (PUs) are coupled with programmable polynomial (linear, quadratic, and cubic) first neighborhood feedback terms. It combines analog and digital processing so that the couplings and the polynomial terms are implemented with analog blocks whereas the integrator is digital, and analog-to-digital and digital-to-analog converters are used to interface between them. A 10-mm/sup 2/, 1.027 million transistor cellular array processor with 2/spl times/72 PUs and 36 layers of memory in each was manufactured using a 0.25-/spl mu/m digital CMOS process. The array processor can perform gray scale Heun's integration of spatial convolutions with linear, quadratic, and cubic activation functions for a 72/spl times/72 data while keeping all input-output operations during processing local. One complete Heun's iteration round takes 166.4 /spl mu/s and the power consumption during processing is 192 mW. Experimental results of statistical variations in the multipliers and polynomial circuits are shown.     

Compact integrated silica wavelength filters

The realization of compact low-loss wavelength filters using two-dimensional integrated optics (2DIO) in a silica-on-silica material system is reported. Two designs suitable for data-communications applications are reported: a 4 /spl times/ 4 channel 6.4-nm channel wavelength spacing device and an 8 /spl times/ 8 channel 3.2-nm channel wavelength spacing device. The devices are fabricated in one deep etch step, and after cleaving the four-channel device has a footprint of 4 /spl times/ 3 min and the eight-channel device 8 /spl times/ 6.5 mm. The average crosstalk of the devices is >22 dB for adjacent channels and 26 dB for nonadjacent channels, and their fiber-to-fiber insertion losses are <12 dB.     

A general-purpose processor-per-pixel analog SIMD vision chip

A smart-sensor VLSI circuit suitable for focal-plane low-level image processing applications is presented. The architecture of the device is based on a fine-grain software-programmable SIMD processor array. Processing elements, integrated within each pixel of the imager, are implemented utilising a switched-current analog microprocessor concept. This allows the achievement of real-time image processing speeds with high efficiency in terms of silicon area and power dissipation. The prototype 21 /spl times/ 21 vision chip is fabricated in a 0.6 /spl mu/m CMOS technology and achieves a cell size of 98.6 /spl mu/m /spl times/ 98.6 /spl mu/m. It executes over 1.1 giga instructions per second (GIPS) while dissipating under 40 mW of power. The architecture, circuit design and experimental results are presented in this paper.     

A DPS array with programmable resolution and reconfigurable conversion time

A CMOS digital pixel sensor (DPS) with programmable resolution and reconfigurable conversion time is described. The chip features a unique architecture based on the pulse width modulation (PWM) technique and operates with either an 8-b or 4-b accuracy. The 8-b conversion mode is used for high-precision imaging while the 4-b conversion mode provides a shorter conversion time and a two times increase in spatial resolution. Two quantization schemes are studied, namely, the uniform and the nonuniform time-domain quantizers, which are referred to as UQ and NUQ, respectively. It is shown that the latter scheme not only permits to linearize the nonlinear response of the PWM sensor, but also allows to significantly speed up the conversion time, particularly for wide dynamic range and low coding resolutions. A prototype of 32/spl times/32/64/spl times/32 pixels has been fabricated using 1-poly, 5-metal CMOS 0.35-/spl mu/m n-well standard process. Power dissipation is 10 mW at V/sub DD/=3.3 V, dynamic range is 90 dB, while dark current was measured at 1 pA. The reconfiguration features of the chip have been verified experimentally.     

High Time-Resolution Visual Motion Detection with Time Stamped Pixel Design

This paper presents a visual motion sensor pixel structure, called time stamped architecture. In this structure, each pixel records asynchronously the transient time of the motion edges, then the information are read out frame by frame for post processing. This architecture is much less sensitive to the pixel level device parameter mismatches in previous velocity sensors while does not have the readout bottleneck problem in previous event-driven readout structures. Measured results show that the proposed pixel design can capture motion in 100 times higher time resolution than the frame rate. This enables much higher speed motion detection and greatly reduces the data transfer and computation load of the following digital processor. 2D array implementation and scalability issues are also discussed.     

A 9-V/Lux-s 5000-frames/s 512/spl times/512 CMOS sensor

A high-responsivity 9-V/Lux-s high-speed 5000-frames/s (at full 512/spl times/512 resolution) CMOS active pixel sensor (APS) is presented in this paper. The sensor was designed for a 0.35-/spl mu/m 2P3M CMOS sensor process and utilizes a five-transistor pixel to provide a true parallel shutter. Column-parallel analog-to-digital converter (ADC) architecture yields fast readout from pixels and digitization of the data simultaneously with acquiring a new frame. The chip has a two-row SRAM to store data from the ADC and read previous rows of data out of the chip. There are a total of 16 parallel ports operating up to 90 MHz delivering /spl sim/1.3 Gpixel/s or 13 Gb/s of data at the maximum rate. In conclusion, a comparison between two high-speed digital CMOS sensor architectures, which are a column-parallel APS and a digital pixel sensor (DPS), is conducted.     

Sub-/spl mu/s switching time in silicon-on-insulator Mach-Zehnder thermooptic switch

We have demonstrated both rise and fall times below 1 /spl mu/s with 10%-90% modulation in a silicon-on-insulator thermooptical Mach-Zehnder switch. The switch is based on 9-/spl mu/m-thick and 10-/spl mu/m-wide single-mode rib waveguides. Very fast switching was achieved by using a differential control method. The switch was driven with a digital signal processor accompanied by simple electronic circuitry.     

基于双DSP结构的实时视频压缩编码器

本文讨论了实时视频压缩编码器的设计与实现，提出了一种DSP加运动协处理器的系统结构，给出了用单象素精度运动估计器实现1／2精度运动估计的方法，并列出了系统可实现的性能指标。     

CMOS image sensor with mixed-signal processor array

We present a single-chip integration of a CMOS image sensor with an embedded flexible processing array and dedicated analog-to-digital converter. The processor array is designed to perform convolution and transformation algorithms with arbitrary kernels. It has been designed to carry out the multiplication of analog image data with given digital kernel coefficients and to add up the results. The processor array is an analog implementation of a highly parallel architecture which is scalable to any desired sensor resolution while preserving video-rate operation. A prototype implementation has been realized in a 0.6-/spl mu/m CMOS technology. Switched current technique has been applied to obtain compact and robust circuits. The prototype's sensor resolution is 64 /spl times/ 128 pixels. The processor array occupies a small chip area and consumes only a small percentage of the power (250 /spl mu/W) of the whole image sensor.     

Adaptive-integration-time image sensor with real-time reconstruction function

A computational image sensor is proposed in which the pixel controls its integration time to light intensity. The integration time of each pixel is selected from among several lengths of integration time and the integration time is shortened if the pixel intensity becomes saturated. Although the integration time of each pixel varies, the pixel intensity is adjusted on the sensor in real time. The dynamic range of the pixel value output from the proposed sensor is greatly widened. A prototype of 64/spl times/48 pixels has been fabricated by using 2-poly 2-metal 0.8-/spl mu/m CMOS process. The proposed sensor has simple functions for the comparison of intermediate integration value and threshold to control the integration time and nonlinear image reconstruction. Because the maximum number of the comparison-reset operations during a frame is three, one of the four integration times can be selected pixel by pixel. The circuit and layout design of the prototype which has computational elements based on column parallel architecture are described and the fundamental functions have been verified. By the experiments, it has been verified that the sensor can achieve a wide dynamic range by adapting to light.     

A wafer-scale 3-D circuit integration technology

The rationale and development of a wafer-scale three-dimensional (3-D) integrated circuit technology are described. The essential elements of the 3-D technology are integrated circuit fabrication on silicon-on-insulator wafers, precision wafer-wafer alignment using an in-house-developed alignment system, low-temperature wafer-wafer bonding to transfer and stack active circuit layers, and interconnection of the circuit layers with dense-vertical connections with sub-/spl Omega/ 3-D via resistances. The 3-D integration process is described as well as the properties of the four enabling technologies. The wafer-scale 3-D technology imposes constraints on the placement of the first lithographic level in a wafer-stepper process. Control of wafer distortion and wafer bow is required to achieve submicrometer vertical vias. Three-tier digital and analog 3-D circuits were designed and fabricated. The performance characteristics of a 3-D ring oscillator, a 1024 /spl times/ 1024 visible imager with an 8-/spl mu/m pixel pitch, and a 64 /spl times/ 64 Geiger-mode laser radar chip are described.     

640 /spl times/ 512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays

A 640 /spl times/ 512 pixel, long-wavelength cutoff, narrowband (/spl Delta//spl lambda///spl lambda//spl sim/10%) quantum-well infrared photodetector (QWIP) focal plane array (FPA), a four-band QWIP FPA in the 4-15 /spl mu/m spectral region, and a broadband (/spl Delta//spl lambda///spl lambda/ /spl sim/ 42%) QWIP FPA having a 15.4 /spl mu/m cutoff have been demonstrated. In this paper, we discuss the electrical and optical characterization of these FPAs, and their performance. In addition, we discuss the development of a very sensitive (NEDT /spl sim/ 10.6 mK) 640 /spl times/ 512 pixel thermal imaging camera having a 9 /spl mu/m cutoff.     

Modeling and control of a six-axis precision motion control stage

This work presents a newly developed six-axis magnetic suspension stage for precision motion control. The designed travel volume is 4/spl times/4/spl times/2 mm in translation and 1/spl deg//spl times/1/spl deg//spl times/2/spl deg/ in rotation. A dynamic model of the feedback linearized and uncoupled stage is developed for the purpose of motion control. Model parameter variations are demonstrated through closed-loop system identification. In motion control, a parameter variation model is proposed in conjunction with a reduced order observer to compensate the joined effect of disturbance, modeling error, and cross coupling. Experimental results in terms of positioning stability, motion resolution, rotational motion control, model regulation, large travel multiaxis contouring, and disturbance rejection are shown. Uniform positioning stability and invariant dynamic response within the designed travel volume are illustrated.     

A signal-processing CMOS image sensor using a simple analog operation

We have developed a high-density CMOS image sensor with a normal mode and three signal-processing function modes: wide dynamic-range mode, motion-detection mode, and edge-extraction mode. Small pixel size and real-time operation are achieved by using a four-transistor and one-capacitor pixel scheme and column-parallel on-chip analog operation. The chip includes 512 (H) /spl times/384 (V) effective pixels. Each pixel has a sufficient fill factor of 24% in an area of 9.3/spl times/9.3 /spl mu/m/sup 2/. The dynamic range at the wide dynamic-range mode is a maximum 97 dB against 51 dB at the normal-readout mode. The chip consumes 79 mW, and the gain-control amplifier and 8-b analog-to-digital converter operate at 46 frames/s using a 3.3-V single power supply.     

A 2-/spl mu/m CMOS 8-MIPS digital processor with parallel processing capability

A 2-/spl mu/m CMOS VLSI digital signal processor (DSP) family, the SP50, is described that is capable of eight million instructions per second and up to six concurrent operations in each instruction. Two DSPs, the PCB5010 and PCB5011, have been developed. Both are based on a common architecture which contains two 16-bit data buses, and a 16/spl times/16/spl rarr/40-bit multiplier accumulator and 16-bit ALU, both with multiprecision support in hardware. Also implemented are two static data RAMs (128/spl times/16 or 256/spl times/16), a data ROM (51/spl times/16), a 15-word three-port register file, three address computation units, and five serial and parallel I/O interfaces. The data path is controlled by an orthogonal instruction set, using 40-bit microcode words. The controller contains a five-level stack and an instruction repeat register, and can have either on-chip program memory (RAM: 32/spl times/40; ROM: 987/spl times/40) or off-chip program memory (up to 64K/spl times/40). Benchmarks show a two to sixfold improvement in overall performance over its predecessors.