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1.
通过射频和直流磁控溅射方法和原位退火工艺将Fe颗粒嵌入绝缘SiO2母体中制备了系列不连续金属绝缘体多层膜样品.研究发现,热处理温度对薄膜中的磁性颗粒分布和磁性能有很大的影响.通过扫描探针显微镜对样品的微结构进行了分析,发现在400℃时形成典型的不连续多层膜结构,磁性颗粒比较均匀的分散在母体当中.样品的磁性能测量结果显示该样品具有较好的磁性能.  相似文献   

2.
用离子注入的方法把Mn注入到非掺杂半绝缘(100)GaAs中,用霍尔以及电化学C-V方法研究了热处理温度对样品电特性的影响.发现在650~850℃温度范围内,随着退火温度的升高,样品的方块载流子浓度呈下降趋势,而载流子迁移率呈明显上升的趋势.这是由于在退火过程中,随着退火温度的升高,有更多的Mn参与MnAs或MnGa相的形成,使得以受主形式存在的Mn减少,并且晶格缺陷得到恢复所致,同时进行了Mn、C双注入实验,分析了C对样品电特性的影响。  相似文献   

3.
从离异共析转变的原理出发,开发60Si2Mn弹簧钢的快速球化退火工艺.讨论加热温度对残留碳化物粒子数量和分布的影响规律以及残留碳化物粒子对碳化物快速球化的作用,研究冷却速度对相变模式的影响.结果表明快速球化退火中,加热温度过高,碳化物完全溶解,没有残留的碳化物作为后续形核核心,加热温度过低,片层状碳化物溶解、断裂不完全...  相似文献   

4.
研究了用稳定元素Mn、Mo、Al和V代替非磁性的Si和Ge对Gd5Ge2Si2化合物的居里温度的影响;并且研究了Gd5(Ge2-xSi2-xM2x)(M=Mn、Mo、Al和V)样品退火处理对居里温度的影响.结果表明少量的合金化元素替代会提高Gd5Ge2Si2化合物的居里温度;退火后居里温度随替代元素的含量变化比退火前更敏感.X射线粉末衍射分析表明少量的合金化元素(Mn、Mo、Al和V)替代不会影响母体Gd5Ge2Si2化合物的晶体结构.对样品的晶态显微组织和表面微结构研究发现退火后组织分布比退火前更均匀。  相似文献   

5.
通过对靶磁控反应溅射法和原位退火工艺制备了系列CoTiO2薄膜样品.研究发现,掺杂量对薄膜的磁性和结构有很大的影响.通过X射线衍射仪和振动样品磁强计对样品的结构和磁性进行了分析,发现制备的样品中较少的掺杂显示明显的室温铁磁性并且没有Co金属存在,但是随着掺杂的增加,部分Co以微小的颗粒存在,而且在超顺磁极限之下,使薄膜的磁性受到超顺磁相的影响.  相似文献   

6.
用熔体快淬和晶化处理的方法制备了Nd4.2Dy0.8Pr4Fe85 Nb1B5纳米复合材料,研究了退火温度对材料磁性能的影响.结果表明,经不同退火温度进行退火处理得到的Nd4.2 Dy0.8Pr4Fe85Nb1B5纳米复合材料的磁性能不同,在580℃下退火处理3 min得到的样品具有最佳磁性能,即Hci=6787.0 ...  相似文献   

7.
在MULTIPAS平台上模拟了不同化学成分的IF钢的两种连续退火生产方案。通过X衍射仪和全自动拉伸试验机对样品进行了检测,结合织构分布及力学性能分析了化学成分及退火温度等对IF钢再结晶织构的影响。研究发现当退火温度大于800℃时,退火温度对〈111〉//ND织构强度无显著影响,得到了C、N、Ti元素含量与样品织构的关系。  相似文献   

8.
为了研究合金熔体过热度和退火温度对Fe_(78)Si_9B_(13)非晶条带磁性能的影响,在180、200和230℃3个不同合金熔体过热度下利用单辊法制备了宽142 mm、厚23μm的非晶条带.在350~370℃范围内选取5个退火温度对非晶条带进行纵向磁场退火,并利用硅钢测试仪对退火后的非晶条带进行磁性能测试.结果表明,随着合金熔体过热度的增大,非晶条带的激磁功率和损耗均呈下降趋势.随着过热度和退火温度的降低,非晶条带的磁性能分布区间变窄,但其稳定性增强.适当提高过热度和热处理温度有助于获得具有最佳磁性能的非晶条带.  相似文献   

9.
GaN HEMT外延材料欧姆接触的研究   总被引:1,自引:0,他引:1  
研究了Ti/Al/Ni/Au多层金属与GaNHEMT结构外延片的欧姆接触,发现接触特性与金属蒸发后的退火温度密切相关.在氮气氛中880℃条件下快速热退火30s,获得了为6.94×10-7·cm2的比接触电阻.光学显微镜观察表明,在这个条件下退火后金属层具有良好的表面形貌.  相似文献   

10.
用磁控溅射方法制备了Pr1(Co40Ag60)99颗粒膜样品并对其结构和电磁性能进行了研究.X-射线衍射结果表明:随着退火温度的升高,颗粒膜中的晶粒逐渐聚集长大,Ag聚集长大存在择优取向.四探针测量结果显示:巨磁电阻效应(GMR)随着退火温度的升高逐渐减小,且在低场下(小于1.5×105A/m)对磁场的灵敏度增大.颗粒的聚集长大导致GMR逐渐减小,说明磁性颗粒的大小对GMR的影响是成反比的.磁性测量表明颗粒膜的磁性为顺磁性,应用朗之万函数拟合磁化曲线计算了沉积态磁性颗粒尺寸.  相似文献   

11.
The mechanical properties and microstructure evolution of cold-deformed CrMnN austenitic stainless steel annealed in a temperature ranging from 50 ℃ to 650 ℃ for 90 min and at 550 ℃ for different time were investigated by tensile test, micro hardness test, and Transmission Electron Microscope (TEM). The steel was strengthened when it got annealed at temperatures ranging from 100 ℃ to 550 ℃, while it was softened when it got annealed at temperatures ranging from 550 ℃ to 650 ℃. Annealing temperature had stronger effect on mechanical properties than annealing time. TEM observations showed that nano-sized precipitates formed when the steel was annealed at 150 ℃ for 90 min, but the size and density of precipitates had no noticeable change with annealing temperature and time. Recrystallization occurred when the steel was annealed at temperatures above 550 ℃ for 90 min, and its scale increased with annealing temperature. Nano-sized annealing twins were observed. The mechanisms that controlled the mechanical behaviors of the steel were discussed.  相似文献   

12.
The microwave absorbing properties and magnetic properties of as-grown Fe-filled carbon nanotubes (CNTs), annealed Fe-filled CNTs, and multi-walled CNTs were studied. Vibrating sample magnetometer results showed that the annealed Fe-filled CNTs have the weakest coercivity and strongest saturation magnetization among the three types CNTs, due to the presence of more ferromagnetic α-Fe nanowires. After annealing, the values increased to 291.0 Oe and 28.0 emu/g and the samples showed excellent microwave absorbing properties. The reflection loss was over 5 dB between 11.6 GHz and 18 GHz with a maximum value of 10.8 dB for annealed Fe-filled CNTs (1.1 wt%)/epoxy composite.  相似文献   

13.
对冷轧及退火后无取向硅钢织构及磁性能的变化进行研究。借助电子背散射衍射(EBSD)技术测量退火试样的极图,计算取向分布函数(ODF)和织构组分的体积分数,并利用TYU-2000M磁性能测量仪测量试样的磁性能。结果表明,810、840、880℃下退火3min后,试样的再结晶均充分完成,且晶粒随着退火温度的升高而长大;退火后,试样中首先显现{111}〈112)织构组分,且随退火温度的升高呈增强趋势;退火温度继续升高时,{111}〈110〉织构组分增强,一次再结晶后材料中出现{111}面织构,导致试样的磁感应强度B50降低,同时由于晶粒的长大使得试样的铁损P15减小。  相似文献   

14.
The effects of Cu addition and annealing treatment on the magnetic properties and microstructure of Nd12.3Fe81.7-xCuxB6 (x=0-1.2) ribbons melt-spun and annealed were systematically investigated by the methods of vibrating sample magnetometer (VSM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). Optimum magnetic properties were achieved by annealing melt-spun Nd12.3Fe81.5Cu0.2B6 ribbons at 550°C for 15 min, which only contained Nd2Fe14B phase. The remanence, coercive force, and maximum ...  相似文献   

15.
ZnO thin films were prepared by direct current(DC) reactive magnetron sputtering under different oxygen partial pressures And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy(Vo), zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(Zno), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.  相似文献   

16.
在Ar气气氛下对热氧化n型4H-SiC生长的SiO2薄膜进行了1100 ℃以下不同温度的退火, 采用反射式椭圆偏振光谱、红外透射光谱研究了退火温度对SiO2薄膜致密性的影响. 椭偏测试的结果表明, 600 ℃退火后样品具有最大的折射率1.47和最小的厚度84.63 nm. 红外研究的结果显示, 600 ℃退火后LO峰强度最强, 认为是对应Si-O结构单元浓度最高. Al/SiO2/SiCMOS结构SiO2的漏电特性研究表明, 600 ℃退火后的SiO2薄膜漏电流相比于其他温度退火的氧化层漏电流小了两个数量级. 在外加反向偏压5V时, 漏电流密度仅仅只有5×10-8 A/cm2.600 ℃退火能显著地改善热氧化层SiO2的致密性.  相似文献   

17.
Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect measurement.The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration.The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown Zn O single crystal after annealing.These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site,forming the complex donor defect upon high temperature annealing,resulting in n-type conduction even if the implantation dose is quite high.  相似文献   

18.
对IF钢生产过程中热轧、冷轧及退火试样的织构演变进行研究。分别借助EBSD和XRD测定和计算了热轧、退火及冷轧试样的取向分布函数及相关织构组分的体积分数。结果发现,热轧板在变形过程中发生了动态再结晶,晶粒为细小的等轴晶,为后续组织发展提供了基础;热轧后试样中的织构很弱,不会影响冷轧织构组分及含量。冷轧过程是织构形成的主要过程,试样中含有4种主要的织构组分:{001}〈110〉、{111}〈110〉、{111}〈112〉和{112}〈110〉。退火过程中发生再结晶,4种冷轧织构组分在退火过程中均分别转变为{111}面织构。  相似文献   

19.
The multi-component A1CrCuFeMnTi high entropy alloy was prepared using a vacuum arc melting process. Serial annealing processes were subsequently performed at 590 ℃, 750 ℃, 955 ℃ and 1 100 ℃ respectively with a holding time of 4 h at each temperature. The effects of annealing on microstructure, mechanical and electrical properties of as-cast alloy were investigated by using differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The experimental results show that two C14 hexagonal structures remain unchanged after annealing the as-cast A1CrCuFeMnTi alloy specimens being heated to 1 100℃. Both annealed and as-cast microstructures show typical cast-dendrite morphology and similar elemental segregation. The hardness of alloys declines as the annealing temperature increases while the strength of as-cast alloy improves obviously by the annealing treatment. The electrical conductivities of annealed and as-cast alloys are influenced by the distribution of interdendrite re~ions which is rich in Cu element.  相似文献   

20.
采用镍锰氢氧化物和碳酸锂为原料,在高温下合成LiNi0.5Mn1.5O4正极材料。系统地研究了不同的退火工艺对LiNi0.5Mn1.5O4结构与电化学性能的影响。研究发现,合成的样品都具有标准的尖晶石结构和规则的八面体外形。电化学测试结果表明,在700℃下退火12h得到的样品电化学性能最佳。首次放电容量达到141mAh/g,40次循环后容量保持率为99.2%,5C放电时容量仍然达到122mAh/g。  相似文献   

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