半绝缘GaAs光电导开关的光控预击穿特性

用波长1064nm,触发光能为0.5mJ的激光脉冲触发电极间隙为4mm的半绝缘（SI）GaAs光电导开关,当偏置电压达到4kV时,开关并未引发自持放电,而是进入非线性（lock-on）工作模式,即开关处于光控预击穿状态。分析认为：通过激子的产生和离解激子效应贡献了光电导;碰撞电离、雪崩倍增、激子效应补充了因外界光源撤出后所需的载流子浓度和能量。在上述因素的相互作用下,SI-GaAs 光电导开关并没有引发自持放电而是处于光控预击穿状态,丝状电流特性影响着开关的损伤程度。     

用光导开关产生高压、高功率超快电脉冲

基于半导体材料的光导效应,设计并制做光导开关,在偏压为4000V,负载电阻Z0为50Ω时,用脉宽为～12ns的激光脉冲辐照光导开关,得到脉宽为～16ns,峰值电压为～1.8kV,峰值功率为～65kW的电脉冲,本文并对光导开关的技术关键进行了分析。     

High-density digital free-space photonic switches using micro-beam optical interconnections

We describe a compact free-space photonic-switching module that uses micro-beam optical interconnections based on stacked planar optics and exciton absorption reflection switch (EARS) arrays. The switching module has two-dimensional fiber array pigtails and a two-stage, 16-input, 16-output structure (four sets of 4/spl times/4 switches). The microbeam optical interconnections can provide a compact switching module (approximately 30/spl times/90/spl times/22 mm [60 cc]). A relay lens array inserted between stages eliminates beam spreading in the switch and decreases the coupling loss and crosstalk of interconnections. Two-stage switching at a data transmission rate of 4 Mbit/s is demonstrated.     

Theory of refractive index variation in quantum well structure andrelated intersectional optical switch

Attention is focused on the deformation of electron wave functions due to an applied field in a quantum well (QW) neglecting the exciton effect. Compared to the electrooptic effect of bulk semiconductor, the theoretical refractive index variation in a QW structure due to this phenomenon is considerably larger at the wavelength corresponding to the energy gap between the first quantized energy levels in the conduction and valence bands. Since the absorption loss changes by the same mechanism, the appropriate wavelength region is estimated for larger index variation where the absorption loss is relatively smaller. The design of a related intersectional optical switch of a small size is discussed. A switch with a length of about 10 μm is achievable with an intersectional angle of more than 10° at a waveguide width of 1 μm. This optical switch is expected to be of high speed and is integrable monolithically with lasers     

基于固体开关器件的新型高压脉冲驱动源

从MOSFET的开关基理,以仿真与电路实验相结合的方法,研究出了MOSFET栅极的"过"驱动技术,以此来提高MOSFET的开关速度。并结合多个MOSFET的串并联的级联技术,采用多管串联方法来提高脉冲源的输出脉冲幅度,采用多管并联方法来提高脉冲源的其输出脉冲功率,从而得到较大的脉冲宽度。在此研制出了输出脉冲幅度大于4kV、前沿小于10ns、脉冲宽度大于100ns的高压快脉冲源。     

Dynamic range and switching speed limitations of an N×Noptical packet switch based on low-gain semiconductor optical amplifiers

Two important system performance limitations-dynamic range and switching speed-of an integrated packet switch fabric based on low-gain semiconductor optical amplifiers (SOA's) have been examined by using cascaded blocks of an SOA model, which includes transient effect, nonlinear pulse distortion effect, and amplified spontaneous emission (ASE) noise. Low-gain SOA's were used to minimize ASE noise considering that no optical filters can be integrated in an SOA-based switch fabric. The system performance with and without a narrowband optical filter at the receiver were both studied. By assuming fixed-wavelength transmitters and no optical filter can be used at the receiving end owing to the unpredictability of arriving packet wavelengths, our simulation results indicate that the dynamic ranges of 4×4 and 8×8 SOA-based packet switches at 2.5 Gb/s can only be about 3.2 and 0.8 dB, respectively. However, at 155 Mb/s, even without a receiving-end optical filter, the dynamic range of each switch size can be increased by more than 17 dB as compared to the cases of 2.5 Gb/s. Note that the dynamic ranges were estimated under the conditions of a bit error rate (BER) ⩽10^-9 and a pulse distortion ratio ⩽30%. We have also shown that, when an optical filter with a 1 nm bandwidth was used at the receiving end to simulate (1) a circuit-switched condition where the center wavelength of the filter can be adjusted according to the established circuit, or (2) a packet-switched condition where each receiver has a wavelength demultiplexer and a detector array, the dynamic range of 4×4 and 8×8 switches can be increased to 16.3 and 14 dB, respectively, at 2.5 Gb/s     

A novel optical bistable multiple-quantum-well phase modulator

The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 μm, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 μm light propagating through a waveguide in a direction normal to the control beam     

连续可调纳秒脉冲LD驱动电源的研制

为了满足单模尾纤输出脉冲半导体激光器及其后级光放大的要求,研制了一种重频、脉宽及峰值电流均连续可调的纳秒脉冲驱动电源.该电源使用功率场效应管作为开关,通过分析其驱动特性,采用合适的栅极驱动电路,从而缩短了脉冲宽度,增加了带负载能力;同时电源中的保护电路采用自断电等保护措施,能有效保证LD的安全工作.实验结果表明,该驱动电源工作稳定,能满足单模尾纤输出脉冲LD重频、脉宽、峰值可调的要求.     

一种基于MMIC技术的S波段GaAs单刀单掷开关

射频开关作为一个系统的重要组成部分其性能直接影响整个系统的指标和功能。其中插入损耗和隔离度以及开关速度是射频开关最重要的几个指标。在实际测试中,S波段脉冲信号源需要产生快前沿的窄脉冲信号。在此基于上述需求,利用了射频开关模块设计的基本原理,并结合了PCB上微带线的特性阻抗分析,且设计了合适的开关驱动电路,最终设计出一种高隔离度,低插入损耗,高速射频开关,开关控制电压为（0,-5V）。在频率2～4GHz的条件下,插入损耗小于1．7dB,隔离度大于48dB,结果满足设计要求。     

基于非线性放大环镜的全光开关特性研究

采用掺铒光纤放大器(EDFA)和高非线性色散位移光纤(HNL—DSF)组成非线性放大环镜(NALM)，利用掺铒光纤放大器的高增益系数和高非线性色散位移光纤的光学克尔效应构造全光开关，实现脉冲整形和消除干扰噪声。采用分布傅里叶法分析了高非线性色散位移光纤的群速度色散(GVD)对非线性放大环镜开关特性的影响，讨论了掺铒光纤放大器的增益系数、增益饱和特性以及耦合器的耦合比等因素的影响，研究了入射光为高斯脉冲的情况下，非线性放大环镜与入射光信号强度相关的放大滤波特性。通过优化非线性放大环镜的各项参数，可以在实现高开关效率的同时，降低对开关功率的要求，对峰值功率低于1mW的超短脉冲进行Tbit／s量级的开关操作，从而适用于超高速大容量光通信系统中。     

Influence of the stark effect on the resonance excitation transfer between quantum dots

The resonance energy transfer between exciton states in a system comprised of two semiconductor quantum dots is studied theoretically. A model Hamiltonian is constructed to describe the influence of the laser pulse, Coulomb interaction, the static Stark effect, and the relaxation of exciton states on the dynamics of the system. Specific calculations of the efficiency of energy transfer under different excitation conditions and different positions of energy levels are exemplified. It is shown that the transfer process can be controlled by shifting the levels in a constant electric field.     

微带线不连续性对光电导开关非线性特性的影响

实验对自行研制的全固态同轴―微带型横向半绝缘砷化镓(SI-GaAs)光电导开关传输特性进行了研究：当偏置电压达到一定阈值时,普通开关进入了非线性锁定（Lock-on）工作模式;在相同实验条件下,当微带线出现不连续时,输出的电脉冲波形没有出现锁定现象;分别用空气击穿的流注模型和微带线等效电容机理分析了微带线不连续效应引起整个开关电路性能变化及抑制开关Lock-on效应的原因。     

Novel photonic switch arrays consisting of vertically integrated multiple-quantum-well reflection modulators and phototransistors: excitation absorptive reflection switch

The authors report a novel photonic switch array, the exciton absorptive reflection switch (EARS), which operates as an optical three-terminal switch with a high contrast ratio and optical gain. The device consists of vertically integrated GaAs/AlGaAs multiple-quantum-well modulators and GaAs heterojunction phototransistors, which are optically isolated and electrically connected in series with distributed Bragg reflectors. 8*8 arrays of EARS with a contrast ratio of more than 20 dB and a high optical gain were demonstrated.<>     

一种高效微带型光导开关超短电脉冲产生器

本文提出了一种新型高效率微带型光导开关超短电脉冲产生器的电路结构，从理论上分析了光导开关对输出电脉冲瞬时特性的影响，并给出了实验结果。     

一种基于PDLC-KIO_3的新型光倍频开关设计与实现

利用聚合物分散液晶(PDLC)的开关特性与KIO3微晶体的非线性光学特性,研制出具有倍频效应(SHG)并且倍频光强电控可调谐的光变频开关。将YAG激光脉冲入射到开关器件,通过调制施加在开关上的驱动电压,当光开关闭合时,可阻挡基频光脉冲,抑制SHG,当光开关开启时,可在散射光路中观察到显著的SHG,开、关态倍频光强对比度可达6∶1。实验发现,驱动电压在0～80 V间,倍频光强能够实现近似线性的调制。测试表明,该变频开关的响应时间为20 ms。     

基于PLZT开关的全光纤单模调Q掺Yb3+光纤激光器

PLZT电光陶瓷具有良好的透明性、高电光系数等特性,用来实现全光纤调Q开关具有很大的优势.分析了PLZT全光纤调Q开关的原理,测量了调Q开关的时间波形,研究了基于PLZT开关的全光纤单模环形调Q掺Yb3 光纤激光器.抽运光功率为180 mW,莆复频率为1 kHz时,得到峰值功率25.6 W,脉冲宽度80 ns,光谱宽度1 nm,脉冲能量2.0 μJ的调Q脉冲.此外,分别研究了抽运功率和重复频率对脉冲峰值功率和脉冲宽度的影响,结果表明,同一重复频率情形下,随着抽运功率的升高,峰值功率增大,脉冲宽度降低;同一抽运功率水平下,随着重复频率的增大,脉冲的峰值功率减小,脉冲宽度增大.     

Sequential Operations of Quantum Dot/Photonic Crystal All-Optical Switch With High Repetitive Frequency Pumping

A photonic crystal (PC)-based symmetric Mach-Zehnder type all-optical switch (PC-SMZ), previously operated by single pump pulse alone, has been operated newly by a multiple-pump pulse train corresponding to a repetition frequency of 40 GHz at pulse energy as low as 10 fJ. The device involves quantum dots (QDs) in two parallel PC arms as optical nonlinear media and functions as a time-differential phase modulator caused by the pump pulse inducing carriers in the QD. Prior to the switch operation, sequential time response of the phase shift for a probe pulse was investigated in detail by changing the power and repetition rate of the pump pulse in the straight PC waveguide configuration. Besides, PC and QD parameters were explored for possibility of 100% on-off switching ratio. As a result, five QD layers, 40-ps QD relaxation-time, 500-mum PC-length and use of as low as 0.05 c PC group-velocity (c; light velocity in vacuum) were found to implement the 100% switching ratio. Since each of these parameters has ever been achieved experimentally, the result will pave a promising way to an ultra-small and ultra-fast integrated all-optical switch.     

10 kV高重频开关组件设计

设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)的高压开关组件。通过串联20只1 kV的RF MOSFET单元电路,获得耐压10 kV以上的高速、高重复频率的开关组件。开展了高压开关组件的结构设计和1 kV的RF MOSFET单元电路设计及散热设计。利用开关组件进行了10 kV脉冲源实验装置设计,测试结果发现脉冲前沿较仿真结果变缓。     

用于紫外激光脉冲电光开关的驱动脉冲源

利用雪崩晶体管作为高速开关器件、根据并联充电、串联放电原理设计了一种串并联相结合的MARX电路,以该电路为基础设计了一种低抖动高压脉冲驱动源,并将其应用于紫外激光脉冲的电光开关削波系统。通过同步调节器调节高压驱动脉冲和激光电光系统的时间匹配度,获得了驱动电脉冲与电光开关耦合的最佳工作状态;对匹配过程中的电光开关工作状态以及激光脉冲压缩过程进行了分析和研究,当高压驱动电脉冲幅度为2 690 V,脉宽为7.9 ns时,可以将脉宽为7.1 ns的紫外激光脉冲压缩至2.1 ns,KDP晶体的透光率达到了92.2%,电光开关的效率达到了31.7%。     

基于PMOS三维选通高速门控技术

为三维选通成像提供了纳秒级阴极选通高速门控开关的设计与实现。该门控开关创新性地采用互补级联开关的方式实现阴极正负电压的高速选通。结合功率开关管的特性,使用功率PMOS作为前级开关,产生平顶质量好的正脉冲;采用功率三极管作为后级开关,无需额外驱动,通过二者互补级联的方式产生阴极选通负脉冲。实验表明,最终开关的上升沿时间为13.4 ns,下降沿时间为24.6 ns,最小脉宽为50 ns,最高工作频率100 kHz,导通电压-200 V,关断电压40 V,满足三维选通门控要求。门控开关通过互补级联方式,不但寄生参数小,脉冲上升、下降时间小,脉冲平顶质量好,时序控制精度高,无需隔离驱动,而且通过功率三极管作后级开关,可以获得比TTL触发脉冲更窄的脉宽,具有良好的脉宽特性。