0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr0.5,Ti0.5)O3（1-x）(Ni51.5Mn25Ga23.5)x固溶体系磁电性能研究

采用传统的固相烧结法合成了0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr0.5,Ti0.5)O3(1-x)(Ni51.5Mn25Ga23.5)x复合体系陶瓷。XRD结果表明,随着Ni51.5Mn25Ga23.5(NMG)掺入,Ni51.5Mn25Ga23.5先溶于0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr0.5,Ti0.5)O3中,后NMG量超过5%不溶于复合体系中,使得0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr0.5,Ti0.5)O3的峰位向右偏移;铁电性能测试结果表明,0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr0.5,Ti0.5)O3(1-x)(Ni51.5Mn25Ga23.5)x复合体系陶瓷随着Ni51.5Mn25Ga23.5的掺入量的增加矫顽场E先降低后增加,剩余极化强度Pr逐渐降低,这与XRD的测试结果相一致;磁性测试结果表明,0.2Pb(Zn1/3Nb2/3)O3-0.8Pb(Zr0.5,Ti0.5)O3(1-x)(Ni51.5Mn25Ga23.5)x随着Ni51.5Mn25Ga23.5掺入量的增加,以独立相析出在复合体系中,剩余磁化强度Mr逐渐增大。     

溶胶-凝胶法制备Y2O3掺杂ZnO压敏薄膜及其电性能（英文）

研究溶胶-凝胶法制备不同浓度Y2O3掺杂对ZnO-Bi2O3压敏薄膜微观结构和电性能的影响。研究结果表明:Y2O3掺杂ZnO薄膜在750°C空气气氛下退火1h,ZnO薄膜的特征峰与ZnO的六方纤锌矿结构相匹配;ZnO晶粒直径随着掺杂量的增加而减小,Y2O3稀土掺杂氧化锌晶粒细化;薄膜厚度均匀且每一层厚度约80nm。研究结果还表明:当Y3+掺杂浓度为0.2%(摩尔分数)时,ZnO薄膜的非线性伏安特性最好,其漏电流为0.46mA,电位梯度为110V/mm,非线性系数为3.1。     

不同退火气氛对0.7BiFeO3-0.3PbTiO3薄膜铁电及介电性能的影响

利用溶胶-凝胶法在LaNiO3/SiO2/Si衬底上制备了0.7BiFeO3-0.3PbTiO3（BFPT7030）薄膜,利用快速退火方式将薄膜分别在空气、氧气流、空气流、氮气流中进行后续退火处理。在空气、氧气流及空气流中退火的薄膜均完全结晶并呈现高度（100）择优取向。而在氮气流中退火的薄膜由于结晶很差,测试不出其电滞回线。空气中退火的BFPT7030薄膜表现出最大的剩余极化及最小的漏电流,Pr 为30μC cm-2, 而在空气流中退火的BFPT7030薄膜表现出最小的剩余极化(Pr: 13μC cm-2)及最大的漏电流。XPS测试结果表明,在空气、氧气流及空气流中退火的BFPT7030薄膜中Fe3 :Fe2 分别为2.09:1, 1.65:1 及 1.5:1。而在氧气流及空气流中退火的BFPT7030薄膜中Bi及Pb的相对含量低于在空气中退火的薄膜。铁离子的价态波动是产生氧空位的原因,增加氧气有助于抑制氧空位的产生。虽然Pb的挥发会导致较差的微观结构,但其挥发并不会导致氧空位的产生。     

溶胶-凝胶法制备Y_2O_3掺杂ZnO压敏薄膜及其电性能(英文)

研究溶胶-凝胶法制备不同浓度Y2O3掺杂对ZnO-Bi2O3压敏薄膜微观结构和电性能的影响。研究结果表明:Y2O3掺杂ZnO薄膜在750°C空气气氛下退火1h,ZnO薄膜的特征峰与ZnO的六方纤锌矿结构相匹配;ZnO晶粒直径随着掺杂量的增加而减小,Y2O3稀土掺杂氧化锌晶粒细化;薄膜厚度均匀且每一层厚度约80nm。研究结果还表明:当Y3+掺杂浓度为0.2%(摩尔分数)时,ZnO薄膜的非线性伏安特性最好,其漏电流为0.46mA,电位梯度为110V/mm,非线性系数为3.1。     

BaTiO3-La2O3-MgO陶瓷微观结构与介电性能

采用传统固相反应法对水热BaTiO3粉体进行La2O3和MgO复合掺杂改性.研究(Ba1-xLax)(Ti1.x/2Mgx/2)O3体系的烧结性能、相组成、微观结构及介电性能.研究结果表明随着掺量x的增加,烧结温度提高,晶体结构逐渐由四方相转为立方相.当x=0.0025时,以Mg2+固溶取代Ti4+位占优势,晶格常数增加;当x≥0.2时,La3+固溶取代Ba位占优势,晶格常数下降.随着掺量的增加,晶粒尺寸减小.x=0.4时,平均晶粒尺寸约为0.33 μm,晶粒大小均匀,材料致密.随着掺量的增加,居里温度下降,居里峰展宽,电阻率提高.高掺量情况下(x≥0.2),随着掺量的增加,介电常数增加,介电常数随温度的变化率降低.BaTiO3-La2O3-MgO体系材料可以作为介电特性较为稳定、小尺寸、大容量的片式陶瓷电容器的介质材料.     

热解温度对镧、锰共掺杂铁酸铋薄膜铁电性能的影响(英文)

在不同热解温度下,采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备镧、锰共掺杂铁酸铋铁电薄膜Bi0.9La0.1Fe0.95Mn0.05O3(BLFMO)。利用热失重仪(TGA)分析BLFMO原粉的质量损失,用 X 射线衍射仪(XRD)和原子力显微镜(AFM)分析 BLFMO 薄膜的晶体结构和表面形貌。在热解温度为420℃时,得到BLMFO薄膜的剩余极化值为21.2μC/cm2,矫顽场为99 kV/cm,漏电流密度为7.1×10-3 A/cm2,说明薄膜在此热解温度下具有较好的铁电性能。     

不同退火气氛对0.7BiFeO_3-0.3PbTiO_3薄膜铁电性能的影响（英文）

利用溶胶-凝胶法在LaNiO_3/SiO_2/Si衬底上制备了0.7BiFeO_3-0.3PbTiO_3(BFPT7030)薄膜,利用快速退火方式将薄膜分别在空气、氧气流、空气流、氮气流中进行后续退火处理。在空气、氧气流及空气流中退火的薄膜均完全结晶并呈现高度(100)择优取向。而在氮气流中退火的薄膜由于结晶很差,测试不出其电滞回线。空气中退火的BFPT7030薄膜表现出最大的剩余极化及最小的漏电流,Pr为30μC·cm~(-2),而在空气流中退火的BFPT7030薄膜表现出最小的剩余极化(Pr:13μC·cm~(-2))及最大的漏电流。XPS测试结果表明,在空气、氧气流及空气流中退火的BFPT7030薄膜中Fe~(3+):Fe~(2+)分别为2.09:1,1.65:1及1.5:1。而在氧气流及空气流中退火的BFPT7030薄膜中Bi及Pb的相对含量低于在空气中退火的薄膜。铁离子的价态波动是产生氧空位的原因,增加氧气有助于抑制氧空位的产生。虽然Pb的挥发会导致较差的微观结构,但其挥发并不会导致氧空位的产生。     

Sm掺杂对Ca_(0.4)Sr_(0.6)Bi_4Ti_4O_(15)铁电薄膜性能的影响

利用溶胶凝胶工艺在Pt/TiO_2 /SiO_2 /Si衬底上制备了Ca_0.4Sr_0.6Sm_xBi_4-xTi_4O_(15)铁电薄膜.研究了不同钐掺量对薄膜的显微结构、晶粒取向及铁电性能的影响.结果表明:钐掺杂对钙锶铋钛铁电薄膜既有抑制氧空位所导致的畴钉扎作用,也有抑制晶粒生长发育的作用.当钐掺量x=0.05时薄膜样品晶粒发育较良好,沿a轴择优取向,I_((200))/I_((119))=0.869;样品铁电性能优良,剩余极化强度P_r=10.2 μC/cm~2,矫顽场强度E_c=120 kV/cm.     

Bi3.25La0.75Ti3O12籽晶层对Ca0.4Sr0.6Bi4Ti4O15铁电薄膜的影响

用溶胶-凝胶法在Si(100)基片上沉积Ca0.4Sr0.6Bi4Ti4O15/Bi3.25La0.75Ti3O12双层膜,薄膜置于空气气氛在退火炉中700℃退火处理。用X射线衍射(XRD)和扫描电镜(SEM)分别对薄膜的相结构、取向度和微观形貌进行表征,并测试了样品的电滞回线。结果表明:与纯的Ca0.4Sr0.6Bi4Ti4O15铁电薄膜相比,双层膜具有更高的a轴取向度,表面均匀致密无孔隙,多为球形晶粒,且晶粒尺寸约为80nm,并且具有较高的剩余极化强度Pr=13.34μC/cm2,对应的矫顽场强为68.32kV/cm;Bi3.25La0.75Ti3O12的引入对Ca0.4Sr0.6Bi4Ti4O15铁电薄膜的形核生长和晶体学取向具有一定的促进作用,有利于样品的铁电性能。     

等离子辅助电子束蒸发La2O3薄膜的制备

采用等离子辅助电子束蒸发,在Si(100)衬底上沉积La2O3薄膜.随后对非晶的沉积态薄膜在750℃和900℃分别退火1 h.实验结果表明,采用等离子辅助电子束蒸发,可以获得非晶态的La2O3薄膜;经750℃热处理后,薄膜部分晶化;经900℃热处理后,薄膜显著晶化,晶粒尺寸明显增大,并沿(002)方向择优取向.对薄膜I-V特性的测量结果表明,沉积态薄膜具有较小的漏电流,但随着热处理温度升高,薄膜晶化程度提高,薄膜漏电流逐渐增大;对薄膜透过率的测量结果表明,单面抛光的Si衬底上沉积La2O3薄膜,在近红外范围内有明显的增透效果,最大可达20%左右.     

颗粒尺寸对多晶La2／3Ca1／3Mn1-xCuxO3低场磁电阻的影响

采用溶胶-凝胶法制备了不同颗粒尺寸的La2/3Ca1/33Mn1-xCuxO3(x=0.04)系列试样。X射线衍射实验说明Cu掺杂和不同温度烧结没有改变晶体的结构。电阻-温度实验曲线表明，随颗粒尺寸的减少，半导体-金属转变温度（Tp）向低温方向移动。磁电阻曲线显示，随颗粒尺寸的减少，与颗粒晶界有关的磁电阻在25K恒温、0.4T低场下由25%增加到了51%。实验结果表明，在La2/3Ca1/3MnO3中少量Cu掺杂和小颗粒尺寸可以实质性地提高与颗粒晶界有关的低场磁电阻效应。     

Effects of Ce~(3+) doping on the structure and magnetic properties of Mn-Zn ferrite fibers

Ce3+-doped Mn-Zn ferrite fibers were successfully prepared by the organic gel-thermal decomposition method from metal salts and citric acid. The composition,structure,and magnetic properties of these ferrite fibers were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),and vibrating sample magnetometer (VSM). The results show that Mn0.2Zn0.8Fe2-xCexO4 (x = 0-0.04) fibers are featured with an average grain size of 11.6-12.7 nm,with diameters ranging between 1.0 to 3.5 μm and a high ...     

钙钛矿型La1-xSrxMnO3纳米薄膜的制备及其光催化性能

采用溶胶-凝胶法和浸渍提拉技术在载玻片基底上制备出钙钛矿型La1-xSrxMnO3纳米薄膜;采用TG/DTA技术分析前驱体凝胶的热分解历程;利用AFM观察薄膜的形貌特征;通过XRD进行物相分析,并计算其晶粒尺寸。结果表明,La1-xSrxMnO3薄膜在600℃形成,为钙钛矿结构,其平均晶粒尺寸为10.349nm。采用该薄膜对多种水溶性染料进行光催化降解试验的结果表明,掺杂后该类纳米薄膜有较好的光催化效果,当x=0.2时光催化效果最好。     

Experimental Investigation of Spray-Deposited Fe-Doped ZnO Nanoparticle Thin Films: Structural, Microstructural, and Optical Properties

Structural, microstructural, and optical properties of the undoped and Fe-doped zinc oxide (ZnO) thin films grown by spray pyrolysis technique using zinc nitrate as a host precursor have been reported here. X-ray diffraction spectra confirm that all the films have stable wurtzite structure and the effects of Fe dopants on the diffraction patterns have been found to be in agreement with the Vegard’s law. Scanning electron microscopy results show good uniformity and dense surface having spherical-shaped grains. Energy dispersive x-ray analyses with elemental mapping of the Fe-doped films show that the Fe dopants are incorporated homogeneously into the ZnO film matrix. The x-ray photoelectron spectroscopy spectra confirm the presence of 3+ oxidation state of Fe in the doped films. Atomic force microscopy analyses clearly show that the average surface roughness and the grain size decrease with the addition of Fe dopants. Optical studies reveal that the optical band gap value decreases on Fe doping. The 1 at.% Fe-doped film shows normal dispersion for the wavelength range 450-700 nm. The PL spectra of the films show a strong ultraviolet emission centered at ~388 nm in the case of 1 at.% Fe-doped film. A slow photo current response in the films has been observed in the transient photoconductivity measurement.     

Effects of Mn substitution on ferro- and piezoelectric properties of Bi0.86Sm0.14FeO3 thin films

The Bi_0.86Sm_0.14FeO₃ (BSFO) and Bi_0.86Sm_0.14Fe_1 − xMn_xO₃ (BSFMO) (x = 0.01, 0.03, 0.05) thin films were deposited on indium tin oxide/glass substrates via a metal organic deposition method. 1 at.% Mn doping leads to an evident reduction of the leakage current in BSFO film. More importantly, the Bi_0.86Sm_0.14Fe_0.99Mn_0.01O₃ film exhibits the lowest coercive field (E_c = 272 kV/cm), the largest remanent polarization (P_r = 53.6 μc/cm²) and the remanent out-of-plane piezoelectric coefficient (d₃₃ = 146 pm/V). However, further increase of Mn doping content results in the deterioration of the charge retaining capability and the piezoelectric properties of the films. The negative influence of high Mn doping contents was discussed based on the structure change and the contribution of irreversible movement of non-180° domain walls in the aged films.     

Correlation between dielectric properties and strain in Pb0.5 Sr0.5TiO3 thin films prepared by using the sol–gel method

Pb_0.5Sr_0.5TiO₃ (PST) thin films were fabricated by the alkoxide-based sol–gel process using spin-coating method on Pt/Ti/SiO₂/Si substrate. The PST films annealed from 500 °C to 650 °C for 1 h show a perovskite phase and dense microstructure with a smooth surface. The grain size and dielectric constant of PST films increase with the increase in annealing temperature, which reduces the SiO₂ equivalent thickness of the PST film. The crystallinity or internal strain in the PST thin films analyzed from the diffraction-peak widths correlates well with the decrease in the dielectric losses. The dielectric constants and dielectric loss (%) of the PST films annealed at 650 °C (t_eq=0.89 nm) were 549 and 0.21%, respectively.     

溶胶-凝胶法制备掺铁钛酸铋铁电薄膜光学性能的研究

通过溶胶-凝胶法制备了不同掺杂浓度的Fe-BTO铁电薄膜以减小其光学带隙,研究不同Fe掺杂浓度对BTO铁电薄膜铁电光伏效应的影响。结果表明,使用溶胶-凝胶法对BTO铁电薄膜掺杂不同浓度的Fe,所制备的薄膜结晶度较好、网状结构明显、空间分布均匀,晶粒大小均一;通过溶胶-凝胶法制备Fe-BTO铁电薄膜在Fe掺杂浓度x=0.9附近可以明显减小其禁带宽度。     

In doped ZnO thin films

ZnO thin films were deposited by ultrasonic spray technique, zinc acetate was used as starting solution with a molarity of 0.1 M. A set of indium (In) doped ZnO (between 2 and 8 wt%) thin films were grown on glass substrate at 350 °C. The present work is focused on the influence of the doping level on the structural, optical and electrical films properties. Optical film characterization was carried by using UV-visible transmission spectroscopy, the optical gap was deduced from absorption. From X ray diffraction (XRD) analysis, we have deduced that ZnO films are formed with nanocrystalline structure with preferential (0 0 2) orientation. The grain size is increased with In doping from 28 to 37 nm. Electrical characterization was achieved using two-probes coplanar structure, the measured conductivity varies from 2.3 to 5.9 Ω cm⁻¹ when increasing the doping level. However the optical gap is reduced from 3.4 to 3.1 eV.     

The wide band gap of highly oriented nanocrystalline Al doped ZnO thin films from sol–gel dip coating

Undoped and Al doped ZnO thin films were prepared on glass substrate by sol–gel dip coating from PVP-modified zinc acetate dihydrate and aluminium chloride hexahydrate solutions. The XRD patterns of all thin films indexed a highly preferential orientation along c-axis. The AFM images showed the average grain size of undoped ZnO thin film was about 101 nm whereas the smallest average grain size at 8 mol% Al was about 49 nm. The values of direct optical band gap of thin films varied in the range of 3.70–3.87 eV.