氟化非晶碳(a-C:F)薄膜的研究

氟化非晶碳(a-C：F)薄膜是一种电、光学新材料。介绍了它的制备方法，对其制备工艺作了较全面的探讨；分析了该膜制备方法和工艺参数对薄膜组分及化学键结构的影响；研完了该膜的电学、光学、热学、力学等物理性质及其在相关方面的应用，并对该膜的物理性质与制备工艺参数的关联作了详细的论述；指出介电常数和热稳定性的矛盾是阻碍该膜实用化的主要原因。     

77K基底制备的银薄膜的微观结构和光学性质

应用蒸发镀膜方法，分别在室温和液氮温度(77K)玻璃基底上制备了银薄膜样品。对两种样品的微观结构和光学性质进行了对比研究，微观结构应用X射线衍射仪、扫描电子显微镜进行分析，光学性质应用椭圆偏振光谱仪进行研究，测量的光学参数与理论计算的结果基本吻合。比较液氮温度基底上制备的银薄膜与室温基底上制备的银薄膜表面后发现：前种薄膜的表面更均匀、颗粒更小；两种薄膜的光频介电函数实部ε1基本没有差别，前种薄膜的光频介电函数虚部ε2大；前种薄膜的光学吸收增强，吸收峰发生蓝移和宽化。实验结果表明颗粒膜的光学吸收峰的位置依赖于颗粒膜中金属的介电常数和粒子尺寸。     

在单分子膜上电沉积金属银膜

以在气／液界面和气／固界面上形成的硬脂酸单分子膜为基底电沉积金属银薄膜，改变电沉积条件。得到了具有不同微观结构，光亮，细致的纳米金属银薄膜，当底相硝酸银溶液的PH值低于7时，在气／液界面没有银膜形成，只在银丝的尖端生成成棕黑色的粉末；提高镀液的PH值有利于银的沉积，且硬脂酸分子排列得越紧密，成膜越好，随着槽电压的升高，银膜的沉积速度渐增大，其微观结构从树叶状逐渐向鹿角状变化。根据电沉积银薄膜的规律，分析了在单分子膜上电沉积银的生长机制，认为单分子膜及其界面的双电层结构是沉积银膜的必要条件。     

纳米复合镶嵌薄膜

阐述了镶嵌纳米复合薄膜的发展、制备、评估及物件。这类薄膜含有镶嵌在介质薄膜中的纳米尺度的金属颗粒或半导体颗粒。作为基础研究，它们可用于研究量子点效应、电子-空穴限域效应、声子限域效应、巨磁阻及非线性光学性能等的研究；作为应用，它们已在光-热转换、恒温系数的电阻膜等获得应用，并将在电双稳开关、光开关及光电器件中获得应用。本文主要介绍了GaAs镶嵌薄膜，同时还介绍了巨磁阻镶嵌薄膜及电双稳薄膜等近年来的实验结果。     

PET基纳米Ag薄膜导电性能及AFM分析

为了研究在PET基非织造布上沉积纳米Ag薄膜厚度对薄膜表面形貌及导电性能的影响，采用磁控溅射法，在PET非织造布上制备了不同厚度的纳米结构Ag薄膜，采用原子力显微镜（AFM）分析不同厚度纳米结构Ag薄膜形貌及粒径的变化；研究了纳米Ag薄膜厚度与薄膜导电性能的关系。实验结果表明：随着膜厚的增加，膜表面逐渐形成连续结构；同时PET非织造布基银薄膜存在一个临界膜厚，在临界膜厚处，薄膜致密度更高，生长更为均匀，薄膜缺陷较少；同时，随着膜厚增加，导电性能提高，在临界膜厚处，电阻率达到最小。     

纳米TiO2／Al2O3复合薄膜光催化特性研究

以电化学方法合成的Al2O3多孔膜为基体，采用交流电沉积的方法在膜孔中沉积纳米TiO2，制备出纳米TiO2／Al2O3复合薄膜。对TiO2／Al2O3复合薄膜的形貌、结构和组成进行了表征；对TiO2／Al2O3复合薄膜光催化甲基橙溶液进行了研究。结果表明Al2O3／TiO2复合薄膜呈现出较好的光催化活性，电沉积TiO2的时间、热处理温度、选择不同光源照射均对TiO2／Al2O3复合薄膜光催化活性有一定的影响。     

α-WO_x薄膜电致变色反应中的结晶性能

用XRD和STM研究了反应溅射沉积WOx薄膜在电致变色过程中的物相结晶性及表面形貌结果表明：着退色反应使非晶WOx薄膜向有序化方向转变，表现为薄膜非晶胞衍射特征减弱这种转化与薄膜着退色反应程度密切相关饱和着色态WOx膜层由平均晶粒尺寸为20nm的颗粒组成，且表面出现空洞疏松；而不饱和着色态WOx膜层由平均晶粒尺寸为110nm的团簇组成，表面形貌相对致密     

纳米复合镶嵌薄膜

阐述了镶嵌纳米复合薄膜的发展、制备、评估及物性。这类薄膜含有镶嵌在介质薄膜中的纳米尺度的金属颗粒或半导体颗粒。作为基础研究，它们可用于研究量子点效应、电子－空穴限域效应、声子限域效应、巨磁阻及非线性光学性能等的研究；作为应用，它们已在光－热转换、恒温数的电阻膜等获得应用，并将在电双稳开关、光开关及光电器件中获得应用。本文主要介绍了ＧａＡｓ镶嵌薄膜，同时还介绍了巨磁阻镶嵌薄膜及电双稳薄近年来的实验结     

A12O3／TiO2复合光催化薄膜的制备、表征及性能研究

近年来，二氧化钛光催化技术正成为光化学、能源、环境以及材料等领域的研究热点。作为一种新型的环境净化材料，TiO2光催化剂可广泛应用于污水处理、空气净化、抗菌除臭、表面防污、自清洁等方面，目前，TiO2光催化剂的固定化及其光催化活性的改善是TiO2光催化材料设计、开发和应用中急需解决的问题。本文利用阳极氧化和电沉积技术，在铝合金表面成功地制备出具有较好光催化活性的A12O2／TiO2复合薄膜。系统研究了复合薄膜的制备工艺；表征了复合薄膜的形貌、结构、成分以及光谱特性；详细分析了复合薄膜的光催化性能，并对这种特殊的复合薄膜形成机理进行了探讨。研究结果表明：电沉积液温度在薄膜制备过程中是最重要的影响因素，合理地控制沉积过程中的工艺参数可得到具有最佳表面质量和光催化性能的Al2O3／TiO2复合薄膜，H2SO4-Al2O3/TiO2复合薄膜经热处理，表面有锐钛矿结构TiO2生成，TiO2的晶粒尺寸在纳米量级；TiO2在加热过程中主要发生表面吸附水和吸附有机物的脱附、结晶水的失去及非晶相的晶化三种变化，且TiO2由无定形结构向锐钛矿晶体结构转变的温度为425℃左右；三种类型Al2O3／TiO2复合薄膜的表面形貌存在较大差异，这主要归因于三种铝阳极氧化膜的膜厚及表面微孔结构的不同；三种类型的复合薄膜均具有紫外光光催化活性；通过Fe离子掺杂改性以及萘酚蓝黑染料敏化处理后，复合薄膜的光催化性能可得到明显地改善；由薄膜形成机理的分析可知，TiO2主要通过交流电沉积过程中的阴极反应沉积于铝阳极氧化膜微孔处和表面上。     

WO3电致变色薄膜制备过程中光学膜厚测量监控技术的研究

采用真空电子束蒸发方法制备WO3电致变色薄膜过程中，利用极值法光学膜厚测量技术监控薄膜的光学特性，对不同光学膜厚的WO3薄膜的原始态、着色态和退色态的光谱特性进行了对比分析。测试采用二电极恒电压方法，用分光光度计实时测量透过率的变化。结果证明以ITO玻璃作为比较片，极值法监控薄膜光学膜厚，当反射率达到第一极小值，即透过率达到第一极大值时，WO3薄膜得到最好的综合电致变色特性。     

Chemical vapor deposition of tungsten oxides: A comparative study by X-ray photoelectron spectroscopy,X-ray diffraction and reflection high energy electron diffraction

Thin films of tungsten compounds have been deposited by pyrolysis of W(CO)₆ on aluminium plates held at 400°C in oxygen or a neutral environment. Such films have been analysed by X-ray photoelectron spectroscopy X-ray diffraction and reflection high energy electron diffraction. Different compounds have been revealed ranging from metalliic tungsten to fully oxidized tungsten. The X-ray photoelectron spectroscopy study of the W_4f doublet has enabled the determination of various oxidation states of tungsten. A rather good agreement is found with the X-ray diffraction and reflection high energy electron diffraction measurements.     

TiNi shape memory alloy coated with tungsten: a novel approach for biomedical applications

This study explores the use of DC magnetron sputtering tungsten thin films for surface modification of TiNi shape memory alloy (SMA) targeting for biomedical applications. SEM, AFM and automatic contact angle meter instrument were used to determine the surface characteristics of the tungsten thin films. The hardness of the TiNi SMA with and without tungsten thin films was measured by nanoindentation tests. It is demonstrated that the tungsten thin films deposited at different magnetron sputtering conditions are characterized by a columnar microstructure and exhibit different surface morphology and roughness. The hardness of the TiNi SMA was improved significantly by tungsten thin films. The ion release, hemolysis rate, cell adhesion and cell proliferation have been investigated by inductively coupled plasma atomic emission spectrometry, CCK-8 assay and alkaline phosphatase activity test. The experimental findings indicate that TiNi SMA coated with tungsten thin film shows a substantial reduction in the release of nickel. Therefore, it has a better in vitro biocompatibility, in particular, reduced hemolysis rate, enhanced cell adhesion and differentiation due to the hydrophilic properties of the tungsten films.     

Synthesis of type-II textured tungsten disulfide thin films with bismuth interfacial layer as a texture promoter

Highly textured tungsten disulfide (WS₂) thin films have been obtained by sulfurization of tungsten trioxide. The properties of WS₂ thin films prepared with bismuth interfacial layer as texture promoter has been studied. The WS₂ thin films were found to have predominant type-II orientation. The stacking of 2H-WS₂ crystallites observed with scanning electron microscopy was not reported hitherto. The films can be pictured as an assembly of WS₂ hexagonal crystallites. The energy dispersive X-ray analysis and X-ray photoelectron spectroscopy (XPS) studies confirm that the films are stoichiometric. The XPS analysis described the local environment of the tungsten atoms and the formal oxidation states of the tungsten and sulfur atoms were + 4 and − 2. Together with the high degree of crystallinity and excellent texture of the film, a relatively smooth morphology, on submicron scale, is revealed through atomic force microscopy study. The conditions for the desired textured growth with the van der Waals planes parallel to the substrate surface are reported.     

Templated growth of tungsten oxide micro/nanostructures using aerosol assisted chemical vapour deposition

Porous anodized alumina (PAA) and macroporous silicon (MS) substrates have been used to template the growth of tungsten oxide via aerosol assisted chemical vapour deposition from the precursor tungsten hexaphenoxide. The results show that thin PAA substrates have potential as templates for growing microstructured tungsten oxide films and MS substrates cause the growth of ‘grids’ of polycrystalline tungsten oxide.     

Properties of chemically vapor-deposited Tungsten thin films on silicon wafers

Tungsten thin films were deposited onto silicon wafers by the thermal decomposition of W(CO)₆. The non-corrosive nature of W(CO)₆ and its decomposition products, tungsten and CO, allows deposition without damage to the wafer surface. The deposition rate is dependent on such parameters as the wafer temperature and the pressure of W(CO)₆. The effects of annealing on film characteristics were studied.The tungsten films show good uniformity and adhesion after deposition and also after annealing. The resistivity depends on the film thickness and, for a film 2200 Å thick, is 15 x 10^-5 ω cm. Wafer annealing is done at 800–900°C under vacuum in an atmosphere of forming gas. After the films have been annealed for 30 min, the resistivity decreases to 1.5 x 10^-5 ω cm.Auger analysis of the films shows that some CO is trapped in the tungsten matrix after deposition at a ratio of about one CO molecule to every four tungsten atoms. Annealing for 30 min drives off the CO, reducing the ratio to less than one CO molecule per 30 tungsten atoms.     

改性金刚石膜的形貌、结构和附着性能

为了提高金刚石膜/基附着力,通过氧辅助使高温钨丝蒸发,在基底表面与碳氢基团反应生成纳米碳化钨,从而得到金刚石和纳米碳化钨混合的改性金刚石膜.用扫描电子显微镜、X射线衍射仪和压痕法研究了改性金刚石膜的形貌、结构和附着力性能.结果表明,碳钨化合物以纳米相存在于改性金刚石膜中.碳钨化合物的存在使改性金刚石膜的硬度下降,但是适当的碳钨化合物能使膜/基附着力性能得到较大提高.当氧气通入量为1.2sccm时,膜/基附着力性能最好.     

Atmospheric pressure chemical vapour deposition of thermochromic tungsten doped vanadium dioxide thin films for use in architectural glazing

Atmospheric pressure chemical vapour deposition of VCl₄, WCl₆ and water at 550 °C lead to the production of high quality tungsten doped vanadium dioxide thin films. Careful control of the gas phase precursors allowed for tungsten doping up to 8 at.%. The transition temperature of the thermochromic switch was tunable in the range 55 °C to − 23 °C. The films were analysed using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Their optical properties were examined using variable-temperature transmission and reflectance spectroscopy. It was found that incorporation of tungsten into the films led to an improvement in the colour from yellow/brown to green/blue depending on the level of tungsten incorporation. The films were optimized for optical transmission, thermochromic switching temperature, magnitude of the switching behaviour and colour to produce films that are suitable for use as an energy saving environmental glass product.     

Tungsten doped chromium nitride coatings

Chromium tungsten nitride films were deposited using magnetron sputtering with ion beam assistance. The content of the films was controlled through the power supplied to the chromium and tungsten targets. Results indicate that the tungsten atoms incorporated into chromium nitride films and formed the chromium tungsten nitride solid solution phase. Moreover, results of this study provide further insight into how various concentrations of tungsten affect the lattice constant, preferred orientation, crystallite size, surface morphology, hardness, internal stress, and adhesion of the films.     

Chemical vapour deposition of tungsten films for metallization of integrated circuits

New materials and processes are required for the metallization of very large- scale integrated circuits. Tungsten offers several advantages as a contact barrier, low resistance gate material and metal for interconnections. Conventional, plasma- enhanced and laser-induced chemical vapour deposition processes used to produce tungsten films are described. The basic reactions involved are either pyrolysis of the carbonyl (W(CO)₆) or reduction of halides (WCl₆ and WF₆). The mechanism of tungsten deposition via the H₂ and silicon reduction of WF₆ is discussed. The physical properties of tungsten films (resistivity, W-Si contact resistance) and the charateristics of Schottky barrier diodes and W/SiO₂/Si structures are reviewed. The chemical properties of tungsten films, including W-Si reactivity (thermal stability of W-Si contacts) and suitable etching solutions are presented. Several applications of tungsten films for metallization of integrated circuits are examined.     

The effect of high-power plasma flows on tungsten plates with multilayer films of tungsten nanoparticles

We have experimentally studied the action of high-power plasma flows on pure tungsten plates covered with multilayer films of tungsten nanoparticles formed by the method of laser electrodeposition. The samples were irradiated using a plasma gun producing hydrogen (helium) plasma flows with power density up to 35 GW/cm². The resulting surface morphology was studied by scanning electron microscopy (SEM). SEM data showed that tungsten plates coated by nanoparticles are more resistant to the formation of microcracks than are pure tungsten plates.