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1.
用磁悬浮冷坩埚提拉设备沿[001]方向生长了组分为Ni52Mn16.4Fe8Ga23.6的单晶,通过磁增强相变应变和磁感生应变的测量研究了该材料磁控形状记忆效应和磁感生应变的温度稳定性。结果发现该材料不但具有大的自发相变应变、磁增强相变应变和磁感生应变,而且磁感生应变具有很好的温度稳定性,从265K到100K,饱和磁感生应变的最大减小量不超过10%。另外,实验也发现磁感生应变量最大的方向是沿晶体母相的[001]方向(即单晶生长方向)。根据合金形状记忆的特点和磁场诱导应变的机理对实验结果进行了分析和讨论。  相似文献   

2.
Magnetic shape memory alloys display magnetic-field-induced strain (MFIS) of up to 10% as single crystals. Polycrystalline materials are much easier to create but display a near-zero MFIS because twinning of neighboring grains introduces strain incompatibility, leading to high internal stresses. Pores reduce these incompatibilities between grains and thus increase the MFIS of polycrystalline Ni–Mn–Ga, which after training (thermo-magneto-mechanical cycling) exhibits MFIS as high as 8.7%. Here, we show that this training effect results from a decoupling of struts surrounding pores in polycrystalline Ni–Mn–Ga during the martensitic transformation. To show this effect in highly textured porous samples, neutron diffraction measurements were performed as a function of temperature for phase characterization and a method for structure analysis was developed. Texture measurements were conducted with a magnetic field applied at various orientations to the porous sample, demonstrating that selection of martensite variants takes place during cooling.  相似文献   

3.
《Scripta materialia》2002,46(8):605-610
In single crystal Ni2MnGa that exhibits 4.6% magnetic field induced strain (MFIS) at 291 K, it is found that the effect lacks thermal stability. As the temperature rises, the MFIS decreases concomitantly with the lattice distortion. At the same time, the critical magnetic field necessary to activate twin boundary motion falls. A new intermediate martensitic phase is observed.  相似文献   

4.
Pt/SrBi2Nb2O9 (SBN)/Al2O3/Si (MFIS) ferroelectric gate oxide structures were prepared with the rf (radio frequency) magnetron sputtering method for the application of non-destructive read-out ferroelectric RAM (NDRO-FRAM) devices. An Al2O3 intermediate layer between the perovskite SrBi2Nb2O9 film and Si substrate prevents the serious inter-diffusion of the SrBi2Nb2O9 (SBN) into the Si substrate. The coercive field that decisively affects the memory window was increased by inserting the Al2O3 insulator between the SBN and Si, and thus the memory window also increased with the increase in the electric field to the SBN. The memory windows of the metal-ferroelectric-insulator-semiconductors (MFIS) structures were in the range of 0.7–3.4 V when the gate voltage varied from 3 to 9 V. The memory windows of the MFIS structures were found to be dependent on the thickness and stoichiometry of the buffer layer. We obtained the maximum memory window in an MFIS with an insulator of 11.4 nm in thickness deposited in the deposition condition of a 15∶5 flow ratio (Ar:O2) during sputtering.  相似文献   

5.
铁磁性Heusler合金Ni2 MnGa是近年开发的磁控制功能材料 ,已发现该材料结合马氏体相变可以产生大磁致伸缩 (磁感生应变 )和磁控制形状记忆效应两种应用功能。用磁悬浮冷坩埚提拉设备沿 [0 0 1]方向生长了组分为Ni52 Mn2 4 Ga2 4 的单晶。室温时沿该单晶样品 [0 0 1]方向加磁场 ,在该方向获得了 - 0 6 %的大磁感生应变。当磁场方向垂直于 [0 0 1]方向时 ,样品在 [0 0 1]方向的磁感生应变值为 0 5 %。同时该单晶样品在室温附近还具有可由磁场增强和控制的双向形状记忆效应。无磁场作用时 ,降低温度 ,样品在发生马氏体相变时 ,在 [0 0 1]方向产生1 2 %的收缩形变。随后升高温度 ,反马氏体相变时样品以同样的应变量膨胀 ,恢复到原来的形状 ,显示了特有的无需外应力协助的自发的双向形状记忆效应。其温度滞后只有 10℃。如果在样品的 [0 0 1]方向加一个偏磁场 ,其形状记忆的应变量随磁场的增强而增大。在磁场为 1 2T时可达 4%。而当磁场转向 [10 0 ]方向时 ,形状记忆的应变可以改变符号。本文指出产生大磁感生应变和磁增强双向形状记忆效应的关键是马氏体变体的择优取向。  相似文献   

6.
采用高温固相法合成(La,Ce,Tb)BO3荧光粉,并对该荧光粉进行XRD和SEM分析。结果表明:(La,Ce,Tb)BO3的晶体结构和LaBO3相同,Ce3+,Tb3+的掺入没有改变晶体的结构,发光粉颗粒大小均匀,形貌规则,粒度在5μm左右。研究了(La,Ce,Tb)BO3的光谱性质,在(La,Ce,Tb)BO3的发射和激发光谱中除了有Tb3+的特征发射和激发峰外,还有Ce3+的特征发射和激发峰。  相似文献   

7.
Direct measurements of reversible magnetic-field-induced strain (MFIS) on a single crystalline Ni45Co5Mn36.5In13.5 metamagnetic shape memory alloy were attained via magnetic-field-induced martensitic transformation under different stress levels and at various temperatures. This was achieved using a custom-designed micro-magneto-thermo-mechanical testing system capable of applying constant stress while measuring strain and magnetization simultaneously on the samples, which can fit into conventional superconducting magnets. MFIS levels are reported as a function of temperature, magnetic field and external bias stress. It was necessary to apply an external bias stress in these materials to detect a notable MFIS because a magnetic field does not favor a specific martensite variant resulting in no shape change even though magnetic field leads to reversible martensitic transformation. Fully recoverable transformation strains up to 3.10% were detected under repeated field applications in the presence of different compressive stress levels up to 125 MPa. The bias stress opposes the field-induced martensite-to-austenite phase transformation and causes the critical field for the transformation to increase at a given temperature in accordance with the Clausius Clapeyron relationship. The effect of the bias stress on the kinetic arrest of austenite is also explored.  相似文献   

8.
PHASERELATIONSHIPSINR-FePSEUDOBINARYSYSTEM(R=Dy_(0.65)Tb_(0.25)Pr_(0.1))¥WANGBowen;WUChangheng;ZHUANGYuzhi;JINXimei(Instituteo?..  相似文献   

9.
在CaCl2熔盐中直接电化学还原固态Tb4O7与Fe2O3(Tb∶Fe=2∶17)的混合 粉末, 一步制得了金属间化合物Tb2Fe17. 结合混合氧化物烧结片在850 ℃的CaCl2 熔盐中3.1 V电解不同时间段产物的成分分析探讨了还原机理:Fe2O3优先还原 成金属Fe, 随后Tb4O7粉末在Fe上还原逐渐生成Tb2Fe17. 采用不锈钢筛网电极 循环伏安法证明了Tb4O7在Fe上的欠电位还原.  相似文献   

10.
The effects of terbium addition on the microstructures and properties of polycrystalline Ni48.8Mn29.7Ga21.5 alloy (numbers indicate at.%) were investigated. The results show that the grain size of Ni-Mn-Ga alloy decreases significantly with the addition of Tb, and Tb elements are found to exist in the grain boundary region and form a (Ni, Tb)-rich quaternary phase. The compressive ductility and fracture toughness increased with the addition of Tb. The improvement of mechanical properties and the slight change of martensitic transformation temperature and the magnetic properties of the Tb-added alloys are discussed in terms of the modification of microstructures with the addition of Tb.  相似文献   

11.
在水热合成条件下合成一个新的吡啶-3,5-二羧酸的稀土铽配合物[Tb2(pydc-3,5)3(H2O)9]n3nH2O,通过X射线单晶衍射、元素分析和红外等手段的表征确定该化合物的组成和晶体结构。结果表明,吡啶-3,5-二羧酸(pydc-3,5)配体与稀土金属Tb形成了一维链状配位聚合物,中心稀土金属有两种配位形式,每个金属均与氧原子形成九配位的结构。配体中的羧酸根采用两种配位方式,即单齿配位和双齿配位。同时配合物能发出三价铽离子的特征绿色荧光,荧光光谱的研究表明,配合物表现出很好的荧光性能。  相似文献   

12.
The C15 Laves phase with composition Tb0.2Pr0.8(Fe0.4Co0.6)1.93 was synthesized by mechanical alloying (MA) and subsequent annealing process. The structure and magnetic properties of Tb0.2Pr0.8(Fe0.4Co0.6)1.93 were investigated by means of X-ray diffraction (XRD), a vibrating sample magnetometer, and a standard strain technique. The effect of annealing on the structure and magnetic properties was studied. The analysis of XRD shows that the high Pr-content Tb0.2Pr0.8(Fe0.4Co0.6)1.93 alloy with the single phase of MgCu2-type structure can be success-fully synthesized by MA method. The sample annealed at 450℃ is fotmd to have a coercivity of 196 kA/m at room temperature. An ep-oxy/Tb0.2Pr0.8(Fe0.4Co0.6)1.93 composite was produced by a cold isostatic pressing technique. A large magnetostriction of 400 ppm, at an ap-plied magnetic field of 800 kA/m, was found for the composite. The epoxy-bonded Tb0.2Pr0.8(Fe0.4Co0.6)1.93 composite combines a high mag-netostriction with a significant coereivity, which is a promising magnetostrictive material.  相似文献   

13.
为改善多晶Fe-Ga合金的磁致伸缩性能,在Fe-Ga合金中掺杂稀土Ce、Tb和Dy元素。 研究了Fe83Ga17和Fe83Ga17R0.6 (R=Ce、Tb和Dy)合金的结构和磁致伸缩性能。结果表明,Fe83Ga17合金由单一bcc结构Fe(Ga)固溶体相组成,而掺杂稀土后的Fe83Ga17R0.6合金中除保持bcc结构的Fe(Ga)固溶体相外,还出现了R2Fe17第二相。掺杂稀土后的Fe83Ga17R0.6合金磁致伸缩系数明显大于Fe83Ga17合金。掺杂不同种类的稀土元素对Fe-Ga合金磁致伸缩性能改善的程度不同。在外磁场为557 kA/m时,Fe83Ga17Ce0.6合金的磁致伸缩系数(206×10-6)明显大于Fe83Ga17Tb0.6 (165×10-6)和Fe83Ga17Dy0.6 (161×10-6)合金的磁致伸缩系数。  相似文献   

14.
利用X射线衍射分析(XRD)和BH测试仪分别研究了元素Tb、Zr的添加对HD法制备NdFeB永磁体的微结构及磁性能的影响规律。微结构研究表明,元素Tb、Zr添加前后的磁体都主要由四方相Nd2Fe14B(P42/mnm)和微量的富Nd相构成;但Tb和Zr的添加明显改变了永磁体的取向特性和磁性能;采用HORTA法计算表明,Tb和Zr的添加虽然都使永磁体的(004)、(006)、(008)极密度因子减小,但是室温下磁性能测试表明,Zr的添加降低了磁体的矫顽力,而Tb添加后永磁体的矫顽力有了明显的提升,从2038 kA/m提升到2302 kA/m;Kronmüller-Plot关系曲线表明,3种合金的矫顽力机理均为磁畴成核反转机制。  相似文献   

15.
目的: 观察5-氟脲嘧啶(5-FU)对口腔癌Tb细胞增殖活性以及钾离子通道功能的影响,进一步揭示5-FU的抗肿瘤机理,并初步探讨钾离子通道与肿瘤细胞增殖的关系。方法: 以5-FU作用Tb细胞24h后,应用MTT比色法与平板克隆形成实验观察Tb细胞的增殖活性,同时以全细胞膜片钳技术检测Tb细胞膜电位与跨膜钾电流的改变。结果: 与空白对照组相比,5-FU能明显抑制Tb细胞的增殖活性,并且可使细胞膜电位发生去极化改变,跨膜钾电流显著降低。结论: 5-FU在抑制Tb细胞增殖的同时钾通道功能也显著降低,提示钾离子通道可能参与调控5-FU抑制Tb细胞增殖的过程。  相似文献   

16.
Total luminescence (TL), circularly polarized luminescence (CPL), luminescence dissymmetry factor glum and lifetimes of optical active Tb(III)– , -EDDS complexes are measured in solution in order to investigate enantiomeric discrimination of energy transfer processes in the presence of quenchers: Nd(III)– , -EDDS or (+),(−)-[Co(en)3]I3 complexes. The spectroscopic differences for the chiral complex pairs are discussed in terms of the Stern–Volmer luminescence quenching mechanism. The quenching rate constants give evidence of the fact that a homochiral-pair is lower in energy in the excited states than a heterochiral-pair. The TL and CPL spectral patterns and fine structures in high resolutions are discussed at 10 K of Tb(III)– , -EDDS and Tb(III)–(R),(S)-cyclene derivative complex nanocrystals in xerogel. The crystal field splitting and the structural anomaly are found in the axial CPL/TL spectra of trigonal dihedral Tb(ODA)3 single crystals in the temperature range between 300 and 10 K.  相似文献   

17.
GaN nanorods were synthesized by magnetron sputtering and ammonification system, and the thickness of Tb intermediate layer was changed to study the effect on GaN nanorods. The resultant was tested by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra. The results show that the thickness of Tb layer has an evident effect on the modality, quality, and luminescence properties of GaN nanorods. PL spectra at room temperature show a very strong emission peak at 368 nm and a weak emission peak at 387 nm, and the intensities of the peak for the produced samples reach the maximum when Tb layer is 20 nm. Finally, the optimal thickness of 20 nm of Tb intermediate layer for synthesizing GaN nanostructures is achieved.  相似文献   

18.
研究了MMgSi_2O_6:Tb~(3+) (M=Ca, Sr, Ba)样品的结构、发光特性.MMgSi_2O_6:Tb~(3+) (M=Ca,Sr , Ba)具有硅酸钙镁石结构,基质掺入铽离子后结构没有明显变化.结果表明:MMgSi_2O_6:Tb~(3+) (M=Ca, Sr ,Ba)在168、220和294 nm附近有强烈的吸收峰.在168 nm真空紫外激发下,546 nm是主发射峰.当材料BaMgSi_2O_6:Tb~(3+)中掺杂Ce~(3+)时,BaMgSi_2O_6:Tb~(3+)样品在168 nm真空紫外激发下的发射强度明显下降.  相似文献   

19.
1 INTRODUCTIONInrecentyears,manyinvestigationsonfluores cencepropertiesofrareearthions containingpolymercomplexeshavebeenmadebecausethepolymerscanbeusedasluminescenceandlasermaterialswithgoodquality[15] .Okamotoetal[6 8] synthesizedpolymerscontainingcoordinationgroupsandstudiedtheirfluo rescenceproperties .However ,thesynthesisoffunc tionalgroupspolymerswith goodenergydonerandenergylevelmatchingcapabilitywasverycomplicat ed ,whichmadetheuseofpolymerluminescentmate rialsuneconomic[1] .Fur…  相似文献   

20.
Comprehensive CeMgAl11O19:Tb3+(CTMA)disintegration via alkaline fusion was discussed. The rare earth(RE) elements in CTMA were dissolved by HCl completely after alkaline fusion. Relationships between the alkaline fusion temperature and various properties of the compounds were examined by various techniques to elucidate their roles in the expected CTMA disintegration.X-ray diffraction(XRD) analysis indicates the phase transformation sequence. A scientific hypothesis of crystal structure disintegration presents that sodium ions substitute for the europium and barium ions in the mirror plane and magnesium ions in the spinel block successively, resulting in that more oxygen vacancies and interstitial sodium ions appear. The unit cell [P63/mmc(194)] breaks from the mirror plane. Then it is decomposed into Na Al O2, and magnesium, cerium, and terbium ions combine with free OH-into Mg O, Tb2O3 and CeO2;Tb2O3 and CeO2 change into Ce0.6Tb0.4O2-x. In the end, the rare earth oxide is recycled easily by the acidolysis. The mechanism provides fundamental basis for recycling of REEs from waste phosphors.  相似文献   

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