免清洗助焊剂的可靠性评价

论述了免清洗焊剂可靠性检测问题,并在试验的基础上做了比较和分析,提出了评价免清洗焊剂可靠性的必要性。     

免清洗焊剂真的无需清洗？

使用免清洗焊剂意味着没有清洗的必要吗？一般而言，如果遵循规则进行焊接，免清洗残余是无害的，不需要清洗。但是，有些情况下，免清洗焊剂可能有害，应该从印刷电路组件(PCA)上清除掉。不知怎么回事，我们这个行业似乎已然将免清洗焊剂残余在任何情况下都无需清洗这种说法当成事实接受了。这种说法，与其说是事实，不如说是神话。它会带来一些长期性的问题。     

免清洗技术保证焊接质量的关键

本文阐述了为使低固含量免清洗焊剂取得良好的焊接效果，关键是保证免清洗焊剂的质量，选择最佳的工艺条件以及完善免清洗焊接质量的检测方法和正确处理应用过程中可能出现的问题。关键词低固含量免洗焊剂焊接质量离子洁净度表面绝缘电阻近年来随着保护大气臭氧层，淘汰臭氧耗损物质（ODS）工作的深入开展和表面组装技术（SMT）迅速发展，越来越多的厂家选用或正准备选用免清洗焊接技术，特别是使用低固含量免洗焊剂的免清洗焊接技术得到了迅速发展。这一新型焊剂带来的各种优点令使用者称心如意，然而要保证免清洗焊接的质量涉及因素较多。首先，免清洗焊接是一个综合工艺过程，要求印制板（PCB）及原始材料的预控制，PCB要干净、少污染，所用元器件的清洁程度和可焊性都必须保证；其次，免洗焊剂的质量，最佳的工艺条件以及完善免清洗焊接质量的检测方法，都必须认真对待，才能获得最佳的焊接效果。通过近四年NCF系列低固含量免洗焊剂的应用情况来看，在保证前者符合要求时，后者的作用尤其重要。     

IF2005系列免清洗助焊剂在无铅工艺中的应用

IF2005系列免清洗助焊剂是北京晶英免清洗助焊剂有限公司(INTERFLux)的主导产品。它是一种低固体含量的免清洗助焊剂，在焊接过程中焊剂中的固体成分能完全挥发，极大地保证了高尖端电子产品的可靠性。这种不含卤素的助焊剂符合．Bellcore和IPC标准，且通过美国军标(MIL—F-14256F)的认证，一直受到广大使用客户的好评.     

新型焊接技术——免清洗焊剂和无铅焊锡膏

鉴于全球电子制造业正向着绿色生产的方向发展,美国、日本、欧洲等一些国家制定了专项法规,保护人居环境。为此,本文重点介绍了绿色焊接材料——免清洗焊剂和无铅焊锡膏的发展历程及其主要性能、特点以及存在的问题。阐述了国内外免清洗焊剂和无铅焊锡膏的研究现状及其在电子组装技术中的应用前景。     

电子组装件焊膏的网版（模版）印刷

2焊剂系统 常用焊膏可采用RMA（中等活性）焊剂、RA（全活性）焊剂和免清洗助焊剂。焊剂系统主要由基材树脂、活化剂、溶剂和添加剂等几部分组成。约占焊膏体积的50％左右。     

锡焊及防止环境污染措施

随着地球环境保护的呼声日益高涨，迄今所使用的材料有些是有害的。即使焊锡也是如此。其中有氟里昂额定量，铅额定量、VOC（挥发性有机化合物）额定量等限制问题。因此，采取对应措施问题已迫在眉捷。本文详细叙述焊剂、焊膏克清洗、无铅焊锡的开发动向，适于VOC的焊剂等。一、焊剂、焊喜的免清洗1免清洗存在的问题及采取的相应措施锡焊后的基板清洗，其目的如下：（1）防止由焊剂残渣造成的绝缘电阻下降及接触不良。（2）防止由焊剂残渣造成的迁移。（3）为使检测管脚和连接器的接触电阻变佳。（4）除去焊球。（5）使外观良好。（6）去…     

倒装芯片制造过程中非流动型底部填充剂的工艺参数

贴片前涂敷非流动型底部填充剂，既消除了免清洗焊剂残留物所带来的可靠性问题，又减少甚至根除了密封剂的固化时间，提高了生产效率。当然，为实现其优质工艺，必须对底充胶涂敷、贴片以及组件再流焊等因素予以认真考虑。     

免清洗焊剂的喷涂装置

ＣＦＣ──１１３和１．１．１─—三氯乙烷对大气臭氧层有破坏作用，联合国禁止使用。电子生产厂家不得不选择新的替代方式。而免清洗技术是替代方式之一，免清洗焊剂喷涂装置又是此技术的关键部件之一。本文简要论述了此装置的特点。     

免洗焊接工艺、材料与设备的分析

本主要针对免洗焊剂以及相关材料，设备，工艺的目前水平和免清洗技术如何达到用CFC清洗的效果进行了探讨，并简要介绍了当前国际上在这一领域的发展状况。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.