Chemistry and structure of GaAs surfaces cleaned by sulfur annealing

A new method for cleaning and passivating GaAs surfaces, sulfur annealing, is proposed. The GaAs surfaces are exposed to sulfur atoms generated by an Ag/AgI/Ag₂S/Pt electrochemical cell at elevated substrate temperatures without arsenic beam irradiation. The chemistry and structure of the GaAs surfaces cleaned by sulfur annealing are studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction (LEED). The S 2p and Ga 3d spectra indicate that Ga---S bonds are formed on the GaAs surfaces where no oxides remain. 4 × 1 and 2 × 1 LEED patterns were observed for the surfaces with an average sulfur layer thickness of 0.15 nm and 0.24 nm respectively. The surface band bending is found to be reduced by 0.2–0.3 eV for the sulfur-annealed surfaces, but slightly increased for the conventionally cleaned surfaces with arsenic beam irradiation. We conclude that the surface cleaning and the submonolayer sulfur passivation can be attained simultaneously by sulfur annealing without arsenic beam irradiation. The method is promising for pre-cleaning the GaAs surfaces before semiconductor crystal growth and thin film deposition.     

STM studies of island formation and surface ordering of Si on GaAs (001), (2×4) and c(4×4): Implications for δ-doping

Scanning tunnelling microscopy (STM) and reflection high energy electron diffraction (RHEED) have been used to study the deposition of Si below 400C onto GaAs (001) surfaces grown in situ by molecular beam epitaxy (MBE). The emphasis is on the island formation and growth, as well as surface ordering, for submonolayer quantities of Si (up to 0.2 ML) deposited on two different As-rich reconstructions of GaAs (0 0 1) (2 × 4) and c(4 × 4). For deposition on the c(4 × 4) surface, an asymmetric (3 × 1) RHEED pattern is formed, a consequence of anisotropic needle-like islands, which grow adjacent to each other along the [1 1 0] direction and produce a three-fold periodic superstructure. Individual islands grow by a site exchange process in which the additional As layer of the c(4 × 4) structure acts as a surfactant and enables the Si atoms to occupy Ga sites in the GaAs lattice. In contrast, Si deposition on the (2 × 4) surface does not lead to any new surface periodicities as monitored by RHEED. The Si atoms form poorly ordered clusters distributed randomly across the surface. The site exchange process cannot occur in this case as the (2 × 4) surface is terminated with only one layer of arsenic. Instead, the Si atoms occupy sites on top of the outer arsenic layer.     

Growth and characterization of titanium silicate nanofilms for gate oxide applications

Atomic layer chemical vapor deposition (ALCVD) of titanium silicate nanofilms using a precursor combination of tetrakis-diethylamido-titanium (Ti(N(C2H5)2)4) and tetra-n-butyl-orthosilicate (Si(O(n)Bu)4) was studied for high dielectric gate oxides. ALCVD temperature window in our study was 170-210 degrees C with a growth rate of 0.8 A/cycle. We investigated the effects of deposition conditions, such as deposition temperature, pulse time of precursor and purge injection, on the titanium silicate nanofilm growth. The saturated composition of Ti/(Ti+ Si) ratio was 0.6 and impurity concentrations were less than 1 atomic %. Dielectric constant (k) of the as-deposited titanium silicate film was approximately 10.5. Hysteresis in capacitance-voltage (C-V) measurements was less than 0.35 V before and after annealing. The leakage current density of the as-deposited and 400 degrees C annealed film was 1.4 x 10(-4) A/cm2, 4.2 x 10(-4) A/cm2, respectively, at a bias of -1 V.     

Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces

The consumption of the surface native oxides is studied during the atomic layer deposition of TiO₂ films on GaAs (100) surfaces. Films are deposited at 200 °C from tetrakis dimethyl amido titanium and H₂O. Transmission electron microscopy data show that the starting surface consists of ~2.6 nm of native oxide and X-ray photoelectron spectroscopy indicates a gradual reduction in the thickness of the oxide layer as the thickness of the TiO₂ film increases. Approximately 0.1-0.2 nm of arsenic and gallium suboxide is detected at the interface after 250 process cycles. For depositions on etched GaAs surfaces no interfacial oxidation is observed.     

Photoluminescence characteristics of oxidized hydrogenated nanocrystalline silicon film

We have observed visible photo-luminescence (PL) from an oxidized hydrogenated nanocrystalline silicon (nc-Si:H) film which was prepared in a plasma enhanced chemical vapor deposition (PECVD) system and post-treated by thermal oxidization processes. At low oxidization temperature (T_ox) below 500 °C, silicon oxyhydrides and silicon oxides are formed at the surface of grains; while at high T_ox above 500 °C, the surface of grains is covered by α-SiO₂. PL around 650 nm-750 nm is observed as T_ox ranges from 100 °C to 700 °C during which the grain size (d_c) varies from 2.7 nm to 5.1 nm. At T_ox > 700 °C, the d_c is larger than 5.1 nm and PL peak shifts to 920 nm. The quantum size effect and surface states model was employed to explain our experimental results.     

Arsenic sorption onto natural hematite, magnetite, and goethite

In this work the sorption of As(III) and As(V) on different natural iron oxides (hematite, magnetite, and goethite) has been studied as a function of different parameters. The sorption kinetics for the three iron oxides shows that equilibrium is reached in less than 2 days and the kinetics of sorption seems to be faster for goethite and magnetite than for hematite. The variation of the arsenic sorbed on the three different sorbents as a function of the equilibrium arsenic concentration in solution has been fitted with a non-competitive Langmuir isotherm. The main trend observed in the variation of the arsenic sorbed with pH is the decrease of the sorption on the three sorbents at alkaline pH values, which agrees with results found in the literature. Highest As(III) sorption was observed on hematite surface in all the pH range compared to goethite and magnetite. Natural minerals studied in this work had similar sorption capacities for arsenic than synthetic sorbents.     

Low-temperature growth of nanostructured diamond films

Nanostructured diamond films are grown on a titanium alloy substrate using a two-step deposition process. The first step is performed at elevated temperature (820 degrees C) for 30 min using a H2/CH4/N2 gas mixture to grow a thin (approximately 600 nm) nanostructured diamond layer and to improve film adhesion. The remainder of the deposition involves growth at low temperature (< 600 degrees C) in a H2/CH4/O2 gas mixture. The continuation of the smooth nanostructured diamond film growth during low-temperature deposition is confirmed by in situ laser reflectance interferometry, atomic force microscopy, micro-Raman spectroscopy, and surface profilometry. Similar experiments performed without the initial nanostructured diamond layer resulted in poorly adhered films with a more crystalline appearance and a higher surface roughness. This low-temperature deposition of nanostructured diamond films on metals offers advantages in cases where high residual thermal stress leads to delamination at high temperatures.     

Arsenic removal by adsorption on iron(III) phosphate

Under natural conditions, arsenic is often associated with iron oxides and iron(III) oxidative capacity towards As(III) is well known. In this study, As(III) and As(V) removal was performed using synthesised iron(III) phosphate, either amorphous or crystalline. This solid can combine (i) As(III) oxidation by iron(III) and (ii) phosphate substitution by As(V) due to their similar properties. Results showed that adsorption capacities were higher towards As(III), leading to Fe2+ and HAsO4(2-) leaching. Solid dissolution and phosphate/arsenate exchange led to the presence of Fe3+ and PO4(3-) in solution, therefore various precipitates involving As(V) can be produced: with Fe2+ as Fe3(AsO4)2.8H2O(s) and with Fe3+ as FeAsO4.2H2O(s). Such formations have been assessed by thermodynamic calculations. This sorbent can be a potential candidate for industrial waste treatment, although the high release of phosphate and iron will exclude its application in drinking water plants.     

Arsenic removal by electrocoagulation using combined Al-Fe electrode system and characterization of products

Combination of electrodes, such as aluminum and iron in a single electrochemical cell provide an alternative method for removal of arsenic from water by electrocoagulation. The removal process has been studied with a wide range of arsenic concentration (1–1000 ppm) at different pH (4–10). Analysis of the electrochemically generated by-products by XRD, XPS, SEM/EDAX, FT-IR, and Mössbauer Spectroscopy revealed the expected crystalline iron oxides (magnetite (Fe₃O₄), lepidocrocite (FeO(OH)), iron oxide (FeO)) and aluminum oxides (bayerite (Al(OH)₃), diaspore (AlO(OH)), mansfieldite (AlAsO₄·2(H₂O)), as well as some interaction between the two phases. The amorphous or very fine particular phase was also found in the floc. The substitution of Fe³⁺ ions by Al³⁺ ions in the solid surface has been observed, indicating an alternative removal mechanism of arsenic in these metal hydroxides and oxyhydroxides by providing larger surface area for arsenic adsorption via retarding the crystalline formation of iron oxides.     

Atomic layer deposition of SiO2 thin films using tetrakis(ethylamino)silane and ozone

We examined the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to tetrakis(ethylamino)silane [Si(NHC2H5)4] and O3. The growth kinetics of silicon oxide films was examined at substrate temperatures ranging from 325 to 514 degrees C. The deposition was governed by a self-limiting surface reaction, and the growth rate at 478 degrees C was saturated at 0.17 nm/cycle for Si(NHC2H5)4 exposures of 2 x 10(6) L (1 L = 10(-6) Torr x s). The films deposited at 365-404 degrees C exhibited a higher deposition rate of 0.20-0.21 nm/cycle. However, they contained impurities, such as carbon and nitrogen, and showed poor film qualities. The concentration of impurities decreased with increasing substrate temperature. It was found that the films deposited in the high-temperature regime (478-514 degrees C) showed excellent physical and electrical properties equivalent to those of LPCVD films.     

High band gap oxide optical coatings for 0.25 and 1.06 μm fusion lasers

Optical coatings of the high band gap oxides ZrO₂, Y₄Al₂O₉, Al₂O₃, MgAl₂O₄ and SiO₂ were prepared by reactive sputtering to evaluate their potential for use in fusion lasers operating at wavelengths ranging from the UV to the near IR. The optical properties (refractive index, band gap, absorption and scattering) and materials properties (crystalline structure, grain size, stoichiometry and surface topography) of these oxides are reported and their suitability for use at 0.25 and 1.06 μm is discussed. The deposition rates and the influences of deposition conditions on the optical and materials properties are also reported.     

Role of Ti out-diffusion from a Pt/Ti bi-layer on the crystalline growth of (Ba,Sr)TiO3: A transmission electron microscopy investigation

We investigated the influence of the Ti out-diffusion in Pt/TiO_x/SiO₂/Si substrates (0 ≤ x ≤ 2), having different thicknesses of Pt and TiO_x layers, on the crystalline growth of (Ba,Sr)TiO₃ (BST) deposited by pulsed laser deposition. By means of X-ray diffraction and transmission electron microscopy, we show that the orientation of BST clearly depends on the presence and quantity of Ti having migrated up to the Pt surface, and on its possible oxidation prior to BST deposition, which was controlled by the atmosphere (vacuum or oxygen) of the pre-heating stage of the BST deposition process. Whereas BST has no preferential orientation if grown on a bare Pt surface, a strong (111) orientation of BST is obtained for a limited diffusion of titanium oxides on the Pt surface just before BST deposition. However, the (111) orientation is lost if this seeding titanium oxide layer on Pt is too thick just before BST deposition. Also, the formation of protrusions was evidenced at the BST/Pt interface and associated with the oxidation of Ti within the Pt layer.     

Liquid chromatographic arsenic speciation with gas-phase chemiluminescence detection

We present a newly developed gas-phase chemiluminescence (CL) detection method for the separation and quantification of inorganic and organic arsenic species. Arsenite, arsenate, dimethylarsinic acid (DMA), and monomethylarsonic acid (MMA) were separated by anion exchange using carbonate-bicarbonate and NaOH eluents with step-gradient elution. The separated species were passed through a UV photooxidation reactor which decomposed the organic species and converted them to inorganic As(V). Subsequent on-line hydride generation with acid and sodium borohydride produces AsH3 and H2, which are separated from the liquid in a gas-liquid separator. The produced AsH3, driven by H2, reacts with ozone in a small reflective cell located atop a photomultiplier tube, resulting in intense CL. In the present form, the limits of detection (LODs, signal-to-noise = 3), based on peak height, for arsenite, arsenate, MMA, and DMA are 0.4, 0.2, 0.5, and 0.3 microg/L, respectively, for a 100 microL injected sample. This analyzer demonstrates the robustness of the CL detection system for arsenic and provides an affordable alternative to atomic spectrometry for use as a detector after chromatographic speciation. We found no significant practical interferences.     

a—C：H（N）薄膜的生物相容性

采用射频－直流等离子增强化学气相沉积法用Ｃ２Ｈ２与Ｎ２的混合气体制备了ａ－Ｃ：Ｈ（Ｎ）薄膜,用动物急性实验法和细胞毒性实验法研究了ａ－Ｃ：Ｈ（Ｎ）薄膜的生物相容性。结果表明,ａ－Ｃ：Ｈ（Ｎ）薄膜的生物相容性优于常用生物材料纯Ｔｉ,且能为细胞的生长提供合适的生长表面。     

On the CVD of MoSi2: an experimental study from the MoCl4–SiCl4–H2–Ar precursor with a view to the preparation of C/MoSi2/SiC and SiC/MoSi2/SiC microcomposites

The chemical vapour deposition of MoSi2 on plane substrates (graphite or sintered-SiC) and ceramic fibres has been studied from MoCl4–SiCl4–H2–Ar gas mixtures at 900相似文献   

Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film

Amorphous hydrogenated silicon oxocarbonitride (SiCNO:H) films have been deposited by plasma‐assisted chemical vapour deposition (PACVD) using bis(trimethylsilyl)carbodiimide (BTSC) as a single source precursor in a argon (Ar) radio‐frequency plasma. In this work the SiCNO:H films deposited at different deposition temperatures were studied in terms of deposition rate, refractive index, surface roughness, microstructure, and chemical composition including bonding state. The results showed that a higher deposition temperature enhanced the formation of Si‐N bonds, and disfavoured the formation of N=C=N, Si‐NCN, C‐H and Si‐CH₃ bonds. A higher deposition temperature also decreased the deposition rate and increased the refractive index of the resulting SiCNO:H film. With increasing temperature a denser film was formed, indicating a change of the deposition mechanism, i.e., transformation from particle precipitation to heterogeneous surface reaction. Except for the coatings deposited at room temperature, the surface of the films was smooth with a roughness of around 4 nm at the centre in the range of 5 μm x 5 μm area. Moreover, the films contained 8 ～ 16 at.% oxygen bonded to Si, which originated from the remnant H₂O in the deposition chamber.     

SRB对AZgl镁合金在两种培养基中腐蚀行为的影响

采用浸泡法、扫描电镜(SEM)和X射线能谱仪(EDS)研究了硫酸盐还原菌(SRB)在两种培养基中,对AZ91镁合金腐蚀行为的影响及其腐蚀机理.结果表明:在培养温度为(30±1)℃的条件下,SRB可以在AZ91表面附着、生长并形成生物膜,生物膜的存在抑制了AZ91的腐蚀.AZ91在含硫酸亚铁铵和维生素C的培养基中所形成的...     

Thermal oxidation of InAs

The growth rate and chemical composition of thermally grown oxides on 111 InAs are presented. The oxide was found to grow very slowly at 350°C but the growth was rapid at 450 °C. The oxides grown at 350 °C contained approximately equal concentrations of As₂O₃ and In₂O₃ and no detectable elemental arsenic. The As₂O₃ concentration decreased and the elemental arsenic concentration increased with increasing growth temperature. The oxides were amorphous unless the growth temperature was 475 °C or above.     

Nucleation study of hydrogenated microcrystalline silicon (μc-Si:H) films deposited by VHF-ICP

Nucleation in the initial stage of hydrogenated microcrystalline silicon (μc-Si:H) film deposition by VHF inductivity-coupled plasma (ICP) has been investigated. When the SiH₄ concentration (R_SiH4 = [SiH₄] / ([SiH₄] + [H₂])) is 6%, the crystallization in the initial 1.1-2.4 nm film deposition is observed at the substrate temperature of 320 °C, while it is decreased to 150 °C by reducing the R_SiH4 to 3%. Furthermore, the nucleation is significantly promoted by H₂ plasma pretreatment as long as 90 s prior to μc-Si:H film deposition. The crystallinity was improved from 33 to 54% and the grain density was increased from 8.0 × 10¹⁰ to 1.7 × 10¹¹ cm^− 2 by the pretreatment. We confirmed no significant change in SiO₂ surface micro roughness after the H₂ plasma pretreatment. The chemical bond states at the SiO₂ surface before film deposition play an important role in nucleation.     

Optimizing control of Fe catalysts for carbon nanotube growth

One must control the size distribution of catalyst Fe nano-particles (NPs) very carefully if one is to have any chance of growing "super-aligned" carbon nanotube (CNT) forests which can be spun directly into yarns and pulled directly into long sheets. Control of the Fe Nps size is important during all phases, including: the catalyst deposition, annealing and forest growth. As a result, it is important to understand how NPs are affected by various experimental factors as well as how those catalyst NPs then cause the growth of the forests. This paper focuses on two key experimental factors: The as-deposited thickness of the Fe catalyst film and the use of hydrogen gas (H2) during anneal and growth. We found that the sheet resistance (Rs) of as-deposited Fe films is directly related to the average film thickness and can be used to estimate whether the films can catalyze the growth of super-aligned forests. The height of the CNT forests decrease with decreasing Rs, but only slowly. More importantly, CNTs grown on the largest and the smallest Rs films are less aligned. Instead, they are more curled and wavy due to the Fe NP dynamics. The use of Hydrogen (H2) affects the formation of Fe NPs from the as-deposited film as well as their composition during the forest growth. We find that the addition of H2 to a CNT forest growth process at 680 degrees C (C2H2/He [30/600 sccm]) increases the CNT alignment substantially. H2 can also reduce iron-oxides which otherwise would impede the formation of NPs. As a result, H2 has multiple roles: besides its chemical reactivity, H2 is important for catalyst reconstruction into NPs having a proper size distribution as well as surface density.