Microwave dielectric properties of Ba[(Zn1−xCox)1/3Nb2/3]O3 ceramics

Microwave dielectric ceramics of Ba[(Zn_1−xCo_x)_1/3Nb_2/3]O₃ (x=0–0.8) were prepared by solid-state reaction method. The microwave dielectric properties, such as dielectric constants, Q×f values and τ_f (temperature coefficient of resonant frequency) were studied as a function of compositions and sintering temperatures. The results revealed that the dielectric constant and Q×f value decrease almost linearly with increasing x. With x increasing from 0 to 0.8, the dielectric constant decreases from 42 to 33, and Q×f value from 75,491 to 20,248 GHz. A nearly zero τ_f ceramic with dielectric constant of 33 and Q×f value of 20,248 GHz was obtained at x=0.8. The sintering temperature has slight effect on dielectric constant, but significant on Q×f value. The microstructures and crystal structures were characterized by using scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis techniques to reveal the mechanisms.     

A finline 60-GHz phase shifter based on a (Ba,Sr)TiO3 ferroelectric thin film

The design and microwave characteristics of a ferroelectric thin film slotline-waveguide phase shifter operating in the millimeter wavelength range (f～60 GHz) are presented. In this frequency range, the phase shifter possesses a figure of merit F=32 deg/dB and provides for a continuous phase shift in the interval from zero to 255 deg. The ferroelectric films are characterized by a dielectric loss tangent of tan δ=0.04 at a tunability factor of K≈1.7, which are promising parameters for the given frequency range.     

Estimating Bounds on Collisional Relaxation Rates of Spin-Polarized 87Rb Atoms at Ultracold Temperatures

We present quantum scattering calculations for the collisional relaxation rate coefficient of spin-polarized ⁸⁷Rb(f = 2,m = 2) atoms, which determines the loss rate of cold Rb atoms from a magnetic trap. Unlike the lighter alkali atoms, spin-polarized ⁸⁷Rb atoms can undergo dipolar relaxation due to both the normal spin-spin dipole interaction and a second-order spin-orbit interaction with distant electronic states of the dimer. We present ab initio calculations for the second-order spin-orbit terms for both Rb₂ and Cs₂. The corrections lead to a reduction in the relaxation rate for ⁸⁷Rb. Our primary concern is to analyze the sensitivity of the ⁸⁷Rb trap loss to the uncertainties in the ground state molecular potentials. Since the scattering length for the a³Σ⁺_u state is already known, the major uncertainties are associated with the X¹Σ⁺_g potential. After testing the effect of systematically modifying the short-range form of the molecular potentials over a reasonable range, and introducing our best estimate of the second-order spin-orbit interaction, we estimate that in the low temperature limit the rate coefficient for loss of Rb atoms from the f = 2,m = 2 state is between 0.4 × 10⁻¹⁵ cm³/s and 2.4 × 10⁻¹⁵ cm³/s (where this number counts two atoms lost per collision). In a pure condensate the rate coefficient would be reduced by 1/2.     

On the formalization and reuse of scientific research

The reuse of scientific knowledge obtained from one investigation in another investigation is basic to the advance of science. Scientific investigations should therefore be recorded in ways that promote the reuse of the knowledge they generate. The use of logical formalisms to describe scientific knowledge has potential advantages in facilitating such reuse. Here, we propose a formal framework for using logical formalisms to promote reuse. We demonstrate the utility of this framework by using it in a worked example from biology: demonstrating cycles of investigation formalization [F] and reuse [R] to generate new knowledge. We first used logic to formally describe a Robot scientist investigation into yeast (Saccharomyces cerevisiae) functional genomics [f₁]. With Robot scientists, unlike human scientists, the production of comprehensive metadata about their investigations is a natural by-product of the way they work. We then demonstrated how this formalism enabled the reuse of the research in investigating yeast phenotypes [r₁ = R(f₁)]. This investigation found that the removal of non-essential enzymes generally resulted in enhanced growth. The phenotype investigation was then formally described using the same logical formalism as the functional genomics investigation [f₂ = F(r₁)]. We then demonstrated how this formalism enabled the reuse of the phenotype investigation to investigate yeast systems-biology modelling [r₂ = R(f₂)]. This investigation found that yeast flux-balance analysis models fail to predict the observed changes in growth. Finally, the systems biology investigation was formalized for reuse in future investigations [f₃ = F(r₂)]. These cycles of reuse are a model for the general reuse of scientific knowledge.     

Control of temperature coefficient of resonant frequency in Ba4Sm9.33Ti18O54 ceramics by templated grain growth

A novel tuning method of temperature dependence of dielectric properties in Ba₄Sm_9.33Ti₁₈O₅₄ (BSmT) microwave material was demonstrated by texture engineering. Two kinds of grain-oriented BSmT ceramics were obtained using a templated grain growth technique. Highly fiber-textured ceramics were fabricated by tape casting of slurry with a mixture of 〈001〉-elongated BSmT template particles and fine-grained BSmT powder. On the other hand, partially grain-oriented ceramics were also obtained from the uniaxially pressed mixture of the template particles and the fine-grained powder. Orientation degree of sintered BSmT ceramics increased with a content of template particles. As compared with the specimen prepared by normal sintering technique, the textured ceramics displayed a large anisotropy in the dielectric properties, especially in the temperature coefficient of resonant frequency (τ_f). Consequently, near-zero τ_f was obtained in the textured ceramics with (hk0)-orientation degree of approximately 0.10 in the surface of the disk specimen. In addition, the τ_f could be controlled to a desired value from ranging −90 to +25 ppm/°C by adjusting the grain orientation in the specimen. Measurement of the temperature dependence of dielectric constant, which correlates with τ_f, revealed positive and negative behaviors for (hk0) and (001) textured BSmT ceramics, respectively. The tuning of τ_f was explained as a rule of mixture of dielectric anisotropy in BSmT.     

Synthesis and properties of Ba(Zn1/3Ta2/3)O3 for microwave and millimeter wave applications

High dielectric materials have gained an important position in microwave electronics by reducing the size and cost of components for a wide range of applications from mobile telephony to spatial communications. Ba(Zn_1/3Ta_2/3)O₃ (BZT) is an A(B′B″)O₃ type perovskite material, showing ultra high values of the quality factor Q. Ceramic-based BZT dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1400 ÷ 1600 °C for 4 h. Compositional, structural and morphological characterization were performed by using XRD, SEM and EDX analysis. The dielectric properties were measured in the microwave range (6 ÷ 7 GHz). An additional annealing at 1400 °C for 10 h has improved some dielectric parameters. For samples sintered at temperatures higher than 1500 °C, the permittivity values were obtained in the interval 30 ÷ 35 and almost do not change the value after the annealing. The Q × f product substantially increases up to about 135,000 GHz, exhibiting a low temperature coefficient of the resonant frequency (τ_f) in microwaves. The best parameters were obtained for the samples sintered at 1600 °C with additional annealing. The achieved high values of the Q × f product recommend these materials for microwave and millimeter wave applications.     

Synthesis of low loss, thermally stable CexY1−xTiTaO6 microwave ceramics

Ce_xY_1−xTiTaO₆ ceramics were prepared through the solid-state ceramic route. The materials were sintered in the range 1520-1580 °C. The structure of the system was analyzed by X-ray diffraction and Raman spectroscopic methods. The cell parameters of solid solutions were calculated using the least square method. The microstructure was analyzed using scanning electron microscopy. The dielectric constant (?_r), temperature coefficient of resonant frequency (τ_f) and the unloaded quality factor (Q_u) are measured in the microwave frequency region using cavity resonator method. The dielectric constant increases with higher concentrations of Ce in the solid solutions. Nearly zero temperature coefficient of resonant frequency (τ_f) was obtained for Ce_0.24Y_0.76TiTaO₆. The samples are of high quality factor and are useful electronic materials for microwave applications.     

Effects of LiF addition on the sintering behavior and microwave dielectric properties of Li<Subscript>2</Subscript>Mg<Subscript>3</Subscript>SnO<Subscript>6</Subscript> ceramics

Li₂Mg₃SnO₆ (abbreviation for LMS) ceramics doped with 1–4 wt% lithium fluoride (LiF) were prepared by the conventional solid-state reaction method. The effects of LiF addition on the phase compositions, sintering behaviors and microwave dielectric properties of LMS ceramics were investigated. A small amount of LiF addition could effectively decrease the sintering temperatures due to the liquid phase in the sintering process and induced no apparent degradation of the microwave dielectric properties. The optimized quality factor values for each composition firstly increased and then decreased with the increase of the LiF content. Whereas, the optimized dielectric permittivity increased with increasing of the LiF content. Distinguished microwave dielectric properties with a dielectric constant (ε _r) of 11.13, a quality factor (Q·f) of 104,750 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?10.83 ppm/°C were obtained for LMS ceramics sintered at 950?°C doped with 3 wt% LiF, which showed that the materials were suitable for the low temperature co-fired ceramics applications (LTCC).     

Characterization of Zn doped MgTiO<Subscript>3</Subscript> ceramics: an approach for RF capacitor applications

In the present study the effect of Zn substitution on densification, microstructure, microwave and broad band dielectric properties of MgTiO₃ ceramics were investigated. The (Mg_1?x Zn _x )TiO₃ (x?=?0.01–0.07) ceramics have been prepared by the conventional solid-state reaction method. The sintering conditions were optimized to obtain the best dielectric properties with maximum relative densities. The microwave dielectric properties are heavily influenced by the amount of x concentration. The optimum dielectric properties of ε _r ~ 17.34, Q?×?f _o ~ 274 THz, τ _f ~ -40.3 ppm/^oC is obtained for (Mg_0.95Zn_0.05)TiO₃ ceramics sintered at 1275?°C. The broad band dielectric properties of (Mg_0.95Zn_0.05)TiO₃ ceramics were measured in the frequency range of 1–100 MHz, and temperature range of 133–483 K. Interestingly, the broad band dielectric properties show relaxation behaviour with frequency. The higher temperature dielectric spectrum of (Mg_0.95Zn_0.05)TiO₃ (MZT) ceramics displayed a distinct dispersion, which is shifting towards a lower frequency side. The observed dielectric relaxation behavior is analyzed using Cole–Cole plot. Furthermore, voltage dependent capacitance behavior at different frequencies is studied for the MZT sample, and it’s interesting to note that the capacitance is stable with the variation in voltage. The electrical conductivity study is carried out as a function of frequency and temperature for MZT sample and the activation energy is calculated by using Arrhenius equation, which is found to be 0.07 eV at 10 MHz. The obtained dielectric response of MZT ceramics are suitable for dielectric resonator and type-1 RF capacitor applications.     

Characterization and dielectric behavior of CuO-doped ZnTa2O6 ceramics at microwave frequency

The effects of CuO addition on the microstructures and microwave dielectric properties of ZnTa₂O₆ ceramics were investigated. CuO was selected as a liquid-phase sintering aid to lower the sintering temperature of ZnTa₂O₆ ceramics. With CuO addition, the sintering temperature of ZnTa₂O₆ can be effectively reduced from 1350 to 1230 °C. The crystalline phase exhibited no phase difference and no second phase was detected at low addition levels (0.25-1 wt.%). The quality factors Q × f were strongly dependent upon the CuO concentration. A Q × f value of 65,500 GHz was obtained for specimen with 0.25 wt.% CuO addition at 1230 °C. For all levels of CuO concentration, the relative dielectric constants were not significantly different and ranged from 34.2 to 35.7. Tunable temperature coefficient of resonant frequency (τ_f) can be adjusted to zero by appropriately turning the CuO content.     

Dielectric behaviour of erbium substituted Mn-Zn ferrites

Dielectric properties such as dielectric constant (ε′) and dielectric loss tangent (tan□δ) of mixed Mn-Zn-Er ferrites having the compositional formula Mn_0.58Zn_0.37Fe_2.05−xEr_x0₄ (where itx = 0.2, 0.4, 0.6, 0.8 and 1.0) were measured at room temperature in the frequency range 1–13 MHz using a HP 4192A impedance analyser. Plots of dielectric constant (ε′) vs frequency show a normal dielectric behaviour of spinel ferrites. The frequency dependence of dielectric loss tangent (tan δ) was found to be abnormal, giving a peak at certain frequency for all mixed Mn-Zn-Er ferrites. A qualitative explanation is given for the composition and frequency dependence of the dielectric constant and dielectric loss tangent. Plots of dielectric constant vs temperature have shown a transition near the Curie temperature for all the samples of Mn-Zn-Er ferrites. However, Mn_0.58Zn_0.37Er_1.0Fe_1.05O₄ does not show a transition. On the basis of these results an explanation for the dielectric mechanism in Mn-Zn-Er ferrites is suggested.     

Dielectric properties of (1−x)(Mg0.95Co0.05)TiO3-xCaTiO3 ceramic system at microwave frequency

The microwave dielectric properties and the microstructures of the (1−x)MgTiO₃-xCaTiO₃ ceramic system were investigated. With partial replacement of Mg by Co, dielectric properties of the (1−x)(Mg_0.95Co_0.05)TiO₃-xCaTiO₃ ceramics can be promoted. The microwave dielectric properties are strongly correlated with the sintering temperature. At 1275°C, the 0.95(Mg_0.95Co_0.05)TiO₃-0.05CaTiO₃ ceramics possesses excellent microwave dielectric properties: a dielectric constant ε_r of 20.3, a Q×f value of 107 000 ( at 7 GHz) and a τ_f value of −22.8 ppm/°C. By appropriately adjusting the x value in the (1−x)(Mg_0.95Co_0.05)TiO₃-xCaTiO₃ ceramic system, zero τ_f value can be achieved. With x=0.07, a dielectric constant ε_γ of 21.6, a Q×f value of 92 000 (at 7 GHz) and a τ_f value of −1.8 ppm/°C was obtained for 0.93(Mg_0.95Co_0.05)TiO₃-0.07CaTiO₃ ceramics sintered at 1275°C for 4 h.     

Low-temperature sintering and microwave dielectric properties of Li2TiO3 based ceramics

New low sintering temperature and temperature-stable low-loss ceramics based on Li₂TiO₃ with lithium zinc borate (LZB) glass and LiZnNbO₄ doping have been prepared by the conventional solid-state reaction route. The effect of LZB glass addition on the sinterability, phase purity, microstructure, and microwave dielectric properties of Li₂TiO₃ ceramics has been investigated. The XRD results suggest the presence of single Li₂TiO₃ phases for LZB glass-added Li₂TiO₃ ceramics. The addition of LZB glass can effectively lower the sintering temperature to 900 °C, and does not induce much degradation of the microwave dielectric properties. Typically, the 2.0 wt% LZB glass-added ceramic sintered at 900 °C has better microwave dielectric properties of ε_r = 23.2, Q × f = 38,909 GHz, and τ _f  = 30.1 ppm/°C. Meanwhile, LiZnNbO₄ compound is selected to tune the temperature coefficient of resonant frequency (τ _f ) to near zero. It is found that the 2.0 wt% LZB glass-added Li₂TiO₃ ceramics with 35 wt% LiZnNbO₄ sintered at 925 °C have good microwave dielectric properties of ε_r = 20.7, Q × f = 19,366 GHz, τ _f  = ?0.5 ppm/°C, which can find applications in microwave devices that require low sintering temperature.     

Can a Pressure Standard be Based on Capacitance Measurements?

We consider the feasibility of basing a pressure standard on measurements of the dielectric constant ϵ and the thermodynamic temperature T of helium near 0 °C. The pressure p of the helium would be calculated from fundamental constants, quantum mechanics, and statistical mechanics. At present, the relative standard uncertainty of the pressure u_r(p) would exceed 20 × 10⁻⁶, the relative uncertainty of the value of the molar polarizability of helium A_ϵ calculated ab initio. If the relativistic corrections to A_ϵ were calculated as accurately as the classical value is now known, a capacitance-based pressure standard might attain u_r(p) < 6 × 10⁻⁶ for pressures near 1 MPa, a result of considerable interest for pressure metrology. One obtains p by eliminating the density from the virial expansions for p and ϵ − 1. If ϵ − 1 were measured with a very stable, 0.5 pF toroidal cross capacitor, the small capacitance and the small values of ϵ − 1 would require state-of-the-art capacitance measurements to achieve a useful pressure standard.     

Studies on the dielectric and relaxor behavior of sol-gel derived barium strontium zirconate titanate thin films

The dielectric behavior of sol-gel derived Ba_0.80Sr_0.20(Zr_xTi_1−x)O₃ (0.0 ≤ x ≤ 0.50) thin films is studied. A relaxor behavior is observed for x ≥ 0.35. The degree of relaxation increases with Zr content. The frequency dependence of the polar regions follows Vogel-Fulcher relation with a characteristic cooperative freezing at freezing temperature (T_f). Below T_f, a long range polarization ordering is likely to take place. The plausible mechanism of the relaxor behavior of BSZT thin films with Zr contents ≥ 0.35 has been proposed based on the measured temperature as well as frequency dependent dielectric data. The solid solution system is visualized as a mixture of Ti^+ 4 rich polar regions and Zr^+ 4 rich regions; with the increase in Zr content the volume fraction of the polar regions is progressively reduced. At and above 35.0 at.% Zr substitution the polar regions exhibit typical relaxor behavior.     

Improved high-Q microwave dielectric resonator using CuO-doped MgNb2O6 ceramics

The microwave dielectric properties and the microstructures of MgNb₂O₆ ceramics with CuO additions (1-4 wt.%) prepared with conventional solid-state route have been investigated. The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. It is found that MgNb₂O₆ ceramics can be sintered at 1140 °C due to the liquid phase effect of CuO addition. At 1170 °C, MgNb₂O₆ ceramics with 2 wt.% CuO addition possesses a dielectric constant (ε_r) of 19.9, a Q×f value of 110,000 (at 10 GHz) and a temperature coefficient of resonant frequency (τ_f) of −44 ppm/°C. The CuO-doped MgNb₂O₆ ceramics can find applications in microwave devices requiring low sintering temperature.     

Effect of dopants on the low temperature microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics

Ba(Zn_1/3Ta_2/3)O₃ has been prepared with different dopants that gave best microwave dielectric properties at room temperature. Effects of different dopants on the low temperature microwave dielectric properties of BZT were investigated. With decrease in temperature, loss tangent was found to decrease marginally and then increase at temperatures lower than 100 K. Increase in loss factor at lower temperatures were found to be less for dopants with smaller ionic radii. Dielectric constant was found to be almost independent of temperature. Temperature coefficient of resonant frequency slowly decreased from a positive value to negative value when temperature was lowered. Temperature at which τ_f becomes zero was found to vary for different dopants. There is a temperature stable region for tanδ, ɛ_r and τ_f which varies for different dopants.     

Improvement of electrostrictive properties of a polyether-based polyurethane elastomer filled with conductive carbon black

The electrostrictive properties of a polyether-based polyurethane elastomer and its corresponding composites filled with conductive carbon black (CB) were studied by measuring the thickness strain S_Z induced by external electric fields E. For films with thicknesses of approximately 50 μm, the apparent electrostrictive coefficient M was measured at low electric fields, E ? 4 V/μm, and different CB contents (up to a volume fraction of 2%). Dielectric measurements in AC mode were performed in order to determine the percolation threshold f_c, which was 1.25 v%. This optimal volume fraction yielded a remarkable threefold increase in M, associated with an increase of the dielectric constant by a factor 7, in comparison with pure PU. This enhancement of the electric field-induced strain and apparent electrostriction was mainly triggered by an increase of the dielectric constant, even if the intrinsic electrostriction coefficient Q was decreased. The nanocomposites thus seem to be very attractive for low-frequency electromechanical applications. Above f_c, their conductivity was raised and their electrostrictive activity lost. Finally, there is a good agreement between the experimentally determined dependence on the CB content of the M coefficient and the theoretical estimation calculated from dielectric and mechanical measurements.