TiCl4和O2在金红石型TiO2(110)表面的吸附机理

基于密度泛函理论(DFT)中广义梯度近似(GGA)下的BLYP、PBE泛函,研究了TiCl_4、O_2在金红石型TiO_2(110)晶胞表面上不同位点的吸附,以及TiCl_4和O_2分子共吸附后在最稳定吸附构型上的解离过程。结果表明,O_2分子在TiO_2(110)晶胞表面上最稳定的吸附位点为氧空位,O_2分子吸附在氧空位后,其中一个O原子与Ti5c原子成键形成桥位氧(O_(bri));另一个O原子形成O增原子(O_(ada)),吸附能为-11.58 kJ/mol,Mulliken电荷布居分析表明O_2分子向表面转移了0.12 eV电荷;TiCl_4分子在TiO_2(110)晶胞表面上最稳定的吸附位点为桥氧位,吸附能为-48.64 kJ/mol,Mulliken电荷布居分析表明TiCl_4分子向晶胞表面转移了0.26 eV电荷;TiCl_4与O_2在各自最佳的吸附位上吸附后,TiCl_4分子在O增原子(O_(ada))的作用下按—TiCl_4→—TiCl_3→—TiCl_2→—TiCl的主要路径发生解离,在TiCl_4分子解离过程中,正反应方向上的活化能垒均小于逆反应方向上的活化能垒,说明TiCl_4分子的解离过程为放热反应。     

Cu(110)晶面催化还原CO2制备甲酸机理的第一性原理研究

铜基催化剂是一种高效还原CO₂为甲酸的绿色催化剂,明确不同晶面的还原机理对催化剂的设计及开发具有重要指导意义,但Cu(110)晶面的催化机理尚不明确。采用基于密度泛函理论的第一性原理方法对Cu(110)表面的还原机理进行了研究,系统研究了不同中间产物的吸附相关性质并探讨了相关的吸附机理。吸附能结果表明,CO₂在Cu(110)表面无法发生化学吸附,而~*COOH、~*HCOO、HCOOH分子和H原子的最稳定吸附位点分别为长桥位点、短桥位点、顶位点和HCP位点。布居数结果表明,~*HCOO和HCOOH分子在吸附过程中与Cu(110)表面的Cu原子形成离子键,H原子和Cu原子之间存在氢键作用,~*COOH分子中的C和Cu原子形成共价键。此外,电子态密度结果表明~*HCOO基团和Cu原子之间形成O—Cu键,~*COOH基团中的C和Cu原子形成C—Cu键,HCOOH分子中的O和Cu原子形成O—Cu键。相比于~*COOH/Cu(110)体系,~*HCOO/Cu(110)吸附体系的电荷密度、电荷转移量和成键能力均较强,说明CO₂在Cu...     

Ba2+在KDP(100)表面吸附的密度泛函理论研究

为了研究Ba~(2+)与KDP晶体表面相互作用的本质,采用密度泛函理论(DFT)方法对Ba~(2+)在KDP(100)表面的吸附行为进行计算。结果表明:Ba~(2+)在KDP(100)表面的吸附能为负值,吸附过程为自发的放热反应。通过结构优化得到3种稳定的吸附构型,最终吸附位置为O原子的顶位或两个O原子之间的桥位。当Ba~(2+)位于磷酸根基团中的两个O原子之间的桥位时,吸附最稳定。在3种吸附构型中,Ba~(2+)与表面O原子均通过离子键结合,而与表面最外层H原子则会产生一定的共价相互作用。另外,Ba~(2+)吸附使KDP(100)表面的P—O键、H—O键以及K—O键有不同程度的伸长或缩短,同时表面的氢键结构也发生了明显的变化。     

碲纳米结构电子性质的第一性原理研究

采用密度泛函理论计算了碲纳米线和碲纳米带的电荷分布,并且研究了碲纳米带上的氢原子(H)、氟原子(F)和水分子(H2O)吸附。研究发现,六边形纳米线的价带顶(Valence band maximum)和导带底(Conduction band minimum)分布具有三重轴对称性,而碲纳米带的VBM和CBM对应的电荷分布和自身的结构对称性相符。由于碲纳米带结构自身的非对称性,导致内部电荷发生转移,使VBM和CBM分别分布在纳米带的两端。碲纳米带上吸附H和F原子时,碲纳米带呈现p型特性;吸附H2O分子时,碲纳米带与H2O分子呈弱相互作用,不改变碲纳米带的电子性质。     

SrO分子在GaN(0001)表面吸附的密度泛函理论研究

建立了SrO/GaN(0001)2×2表面吸附模型,采用基于第一性原理的密度泛函理论平面波超软赝势方法对SrO分子的吸附生长进行了计算,详细研究了SrO分子在表面的吸附位置、吸附能及表面化学键特性。计算发现,SrO分子在GaN(0001)表面吸附不会发生分解,最稳定吸附位为Ga桥位,吸附能达到7.257~7.264 eV。通过电荷布居数和态密度分析,SrO分子吸附后O与表面的一个Ga原子形成的化学键表现出共价键特征,电子由SrO转移给表面部分Ga原子,GaN(0001)仍存在表面态。     

甲醛在TiO2表面吸附的第一性原理研究

利用密度泛函理论研究了HCHO分子在TiO2金红石(110)面和锐钛矿(101)面上的吸附,结果表明甲醛在这些面上均能形成稳定的化学吸附与物理吸附。在物理吸附中,分子构型受吸附的影响均十分微弱。而在化学吸附中,甲醛分子明显变形,甲醛分子与表面的2配位O原子(O2C)一起形成双氧甲基(CH2O2)物种。化学吸附导致HCHO分子中的羰基延长14%~17%,表明吸附削弱了分子内原子之间的作用,从而有利于分解。此外,在这两种表面中,金红石(110)面对HCHO较强的吸附显示了其活性比锐钛矿(101)面高。     

分子氧在Con小团簇吸附的密度泛函研究

采用基于密度泛函理论（DFT）的Dmol3程序广义梯度近似PBE泛函,系统研究了Con（n =1~5）团簇及其对分子氧（O2）（垂直和平行）吸附后的ConO2团簇几何结构、稳定性和电子性质。结果表明：Con团簇的结合能随团簇数目的增加而增大,变化趋势趋于平缓,稳定性增强;分子氧在Con团簇顶位、桥位、空位的吸附稳定性、Co—O键长、O—O键长、分子氧的电荷转移都随团簇数目增大呈现规律性变化,说明分子氧被活化;Con团簇和分子氧之间的电荷转移越多,相互作用越强,吸附能和结合能也越大;分子氧垂直吸附型Co2O2 B团簇的吸附能和结合能最强,分别是-6.744 eV和4.611 eV,分子氧所得电荷最强为 -1.130 e。     

α-A12O3基片（0001）表面及其对ZnO吸附位置研究

建立了一种2×2α-Al2O3 (0001)基片表面吸附ZnO模型,在周期边界条件下的k空间中,采用基于密度泛函理论的局域密度近似平面波超软赝势法,对α-Al2O3 (0001)基片表面结构及其ZnO分子在表面最初吸附生长位置进行了计算研究.由于较大的表面弛豫,使得氧原子全部暴露于基片最外表面,明显地表现出O原子电子表面态;驰豫后的表面能对ZnO分子产生较强的化学吸附,表面电子结构将发生明显的变化,其表面最优吸附生长点的方位正好偏离α-Al2O3 (0001)表面氧六角对称30°;并计算了这些吸附生长点处Zn与表面O的结合能.     

α-Al2O3基片(0001)表面及其对ZnO吸附位置研究

建立了一种2×2α-Al2O3 (0001)基片表面吸附ZnO模型,在周期边界条件下的k空间中,采用基于密度泛函理论的局域密度近似平面波超软赝势法,对α-Al2O3 (0001)基片表面结构及其ZnO分子在表面最初吸附生长位置进行了计算研究.由于较大的表面弛豫,使得氧原子全部暴露于基片最外表面,明显地表现出O原子电子表面态;驰豫后的表面能对ZnO分子产生较强的化学吸附,表面电子结构将发生明显的变化,其表面最优吸附生长点的方位正好偏离α-Al2O3 (0001)表面氧六角对称30°;并计算了这些吸附生长点处Zn与表面O的结合能.     

AlN在α-Al2O3(0001)表面吸附过程的理论研究

采用基于密度泛函理论的平面波超软赝势法,对α-Al2O3(0001)表面吸附AlN进行了动力学模拟计算,研究了AlN分子在a-Al2O3(0001)表面吸附成键过程、吸附能量与成键方位.计算表明吸附过程经历了物理吸附、化学吸附与稳定态形成的过程,其化学结合能达到4.844eV.吸附后AlN化学键(0.189±0.010nm)与最近邻的表面Al-O键有30°的偏转角度,Al在表面较稳定的化学吸附位置正好偏离表面O六角对称约30°,使得AlN与蓝宝石之间的晶格失配度降低.     

Adsorption of Ni on Si(1 0 0) surface

The chemisorption of one monolayer Ni atoms on ideal Si(1 0 0) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of Ni atoms on different sites are calculated. It is found that Ni atoms can adsorb at fourfold site above the surface and bridge site below the surface. The adsorption of Ni atoms can readily diffuse and penetrate into the subsurface. A Ni, Si mixed layer might exist at the Ni-Si(1 0 0) interface. The layer projected density states are calculated and compared with that of the clean surface. The charge transfers are also investigated.     

Adsorption and dissociation of the O2 on W(111) surface: a density functional theory study

The adsorption and dissociation of O2 molecules on W(111) surface have been studied at the density functional theory (DFT) level in conjunction with the projector augmented wave (PAW) method. All passable dissociation reaction paths of O2 molecule on W(111) surface are considered. The nudged elastic band (NEB) method is applied to locate transition states, and minimum energy pathways (MEP). We find that there is an existing of little barriers for the dissociations reaction of O2 molecule. Ab initio molecular dynamics simulation is also preformed to study the adsorption and dissociation mechanism of O2 molecules on the W(111) surface. Our results indicate that O2 molecule will be dissociated by inclined deposition at temperature of 10 K, but can stable adsorb on top site by normal deposition. The change of bond length and adsorption energy in process of dissociation of O2 molecules on the W(111) surface are also calculated. The O2 coverage effect is also discussed in this paper.     

NH3 and H2S adsorption on Au3Pt3 cluster studied by a first principles calculation

The equilibrium atomic structures of the Au₃Pt₃ cluster and NH₃, H₂S molecules are determined by Density Functional Theory calculations. The adsorption of NH₃ and H₂S molecules on Au₃Pt₃ cluster is then studied. The energy levels and the corresponding charge densities, adsorption energies, charge transfer and magnetization are calculated for different adsorption sites. We find that the adsorption generally modifies the structure of the Au₃Pt₃ cluster and the adsorbate. There exists strong interaction between Pt and N atoms. We observe that H₂S dissociate at a specific site for the local density approximation (LDA) and one of the H atoms binds to Pt. In general, there is charge transfer from the molecules NH₃ and H₂S to Au₃Pt₃ cluster, for almost all adsorption sites. This makes the Au₃Pt₃ cluster semiconducting.     

Adsorption and desorption of CO on Ni decorated stepped Rh(553)

Vicinal surfaces are important in surface science, as they show interesting electronic structures and reactivities due to the steps. In this paper the adsorption and desorption of carbon monoxide on the stepped Rh(553) surface decorated with Ni is reported. With 0.1 to 0.3 monolayer Ni on Rh(553) one and two atoms broad Ni wires along the Rh steps are formed. The adsorption and desorption of carbon monoxide on these surfaces is investigated using thermal desorption spectroscopy (TDS) and reflection absorption infra red spectroscopy (RAIRS). TDS shows a marked change from just one broad TDS peak on pure Rh(553) to 4 distinct peaks with increasing Ni decoration. RAIRS shows that already at 0.1 monolayer Ni the CO adsorption states on bridge sites on the Rh step atoms are completely quenched. In addition it is shown that with Ni films up to 3 monolayer the on top adsorption sites for CO on Ni are preferred over the bridge and hollow adsorption sites in contrast to what is known from the Ni(111) surface.     

Adsorption and desorption of CO on Ni decorated stepped Rh(553)

Vicinal surfaces are important in surface science, as they show interesting electronic structures and reactivities due to the steps. In this paper the adsorption and desorption of carbon monoxide on the stepped Rh(553) surface decorated with Ni is reported. With 0.1 to 0.3 monolayer Ni on Rh(553) one and two atoms broad Ni wires along the Rh steps are formed. The adsorption and desorption of carbon monoxide on these surfaces is investigated using thermal desorption spectroscopy (TDS) and reflection absorption infra red spectroscopy (RAIRS). TDS shows a marked change from just one broad TDS peak on pure Rh(553) to 4 distinct peaks with increasing Ni decoration. RAIRS shows that already at 0.1 monolayer Ni the CO adsorption states on bridge sites on the Rh step atoms are completely quenched. In addition it is shown that with Ni films up to 3 monolayer the on top adsorption sites for CO on Ni are preferred over the bridge and hollow adsorption sites in contrast to what is known from the Ni(111) surface.     

First-principles study of NO adsorbed Ni(100) surface

The geometric, electronic and magnetic properties of NO molecules adsorbed on the Ni(100) surface are investigated by the first-principles calculation on the basis of the density functional theory (DFT). The NO molecules are predicted to be chemisorbed at hollow site with an upright configuration at 0.125 ML and 0.5 ML coverages. After adsorption, the magnetic moment is significantly suppressed for surface Ni atom and almost quenched for NO molecule. This behavior can be reasonably explained by the difference of the backdonation process between the spin-up and spin-down electronic states, which is demonstrated by the spin-resolved differential charge density map.     

Ab initio modeling of Al adsorption on CaF2 surfaces

Ab initio simulations of the adsorption of Al atoms on CaF₂ (0 0 1) and (1 1 1) surfaces have been performed for supercells with 7 different atomic configurations, using density functional theory. For (1 1 1) surfaces, a repulsive interaction was observed for most configurations, while a weak attraction was obtained when the Al atom was placed above F atoms. For the Ca-terminated (0 0 1) surface, the adsorption energy was about 5 times larger, whereas for the F-terminated (0 0 1) surface it was about 20 times greater. The comparative analysis indicates that the (0 0 1) surfaces are reactive and have a strong Al adatom bonding (chemisorption), especially for the F-terminated substrate. On the contrary, the (1 1 1) plane may be considered as non-reactive (physisorption), having a weak bonding of the Al adatom above the F site.     

Structural and electronic properties of 0.5 ML sulfur adsorbed on the GaP(001) surface

The structural and electronic properties of 0.5 ML S adsorption on the Ga- and P-terminated GaP(001) (1 × 2) surfaces were studied by first-principles total-energy calculations. Sulfur adsorbates prefer to occupy the bridge sites on the Ga-terminated surface, consistent with the experimental results. Electronic analysis shows that the surface state around the Fermi energy (E _f) vanishes for S-adsorbed P-terminated surface at the substitution site. In the case of S-adsorbed Ga-terminated surface at the bridge site, the surface state at E _f is tremendously lowered but not completely diminish, which is in good agreement with the experiments. The S-induced work-function changes on the Ga- and P-terminated surfaces are 1.44 and 0.45 eV, respectively, indicating that some charge is transferred from the substrate to the S adsorbate. The Ga-S stretching vibrational frequency is calculated to be 37.61 meV.     

Theoretical investigation of atomic structure and electronic properties of Ca/Si(110)-(2 × 1) reconstruction

We have presented first-principles total-energy calculations for the adsorption of Ca metals onto a Si(110) surface. The density functional method was employed within its local density approximation to study the atomic and electronic properties of the Ca/Si(110) structure. We considered the (1 × 1) and (2 × 1) structural models for Ca coverages of 0.5 monolayer (ML) and 0.25 ML, respectively. Our total-energy calculations indicate that the (1 × 1) phase is not expected to occur. It was found that Ca adatoms are adsorbed on top of the surface and form a bridge with the uppermost Si atoms. The Ca/Si(110)-(2 × 1) produces a semiconducting surface band structure with a direct band gap that is slightly smaller than that of the clean surface. One filled and two empty surface states were observed in the gap; these empty surface states originate from the uppermost Si dangling bond states and the Ca 4 s states. It is found that the Ca-Si bonds have an ionic nature and complete charge being transferred from Ca to the surface Si atoms. Finally, the key structural parameters of the equilibrium geometry are detailed and compared with the available results for metal-adsorbed Si(110) surface, Ca/Si(001), and Ca/Si(111) structures.     

A cluster approach to hydrogen chemisorption on the GaAs(1 0 0) surface

Chemisorption properties of atomic hydrogen on the Ga-rich GaAs(1 0 0), (2×1) and β(4×2) surfaces are investigated using ab initio self-consistent restricted open shell Hartree–Fock (ROHF) total energy calculations with Hay–Wadt (HW) effective core potentials. The effects of electron correlation have been included using many-body perturbation theory through second order with the exception of β(4×2) symmetry due to computational limitations. The semiconductor surface is modeled by finite sized hydrogen saturated clusters. The effects of surface reconstruction have been investigated in detail. We report on the energetics of chemisorption on the (1 0 0) surface layer, including adsorption beneath the surface layer at an interstitial site, and also report on the possible dimer bond breaking at the bridge site. Chemisorption energies, bond lengths, and charge population analysis are reported for all considered sites of chemisorption.