Fabrication and characterization of CuInS2 films by chemical bath deposition in acid conditions

Non-crystalline copper indium disulphide (CuInS₂) thin films had been deposited on ITO glass by chemical bath deposition (CBD) in acid conditions. Then polycrystalline CuInS₂ films were obtained after sulfuration in sulfur atmosphere at 450 °C for 1.5 h. The films had been characterized by X-ray diffraction (XRD), scanning electronic microscopy (SEM), Raman scattering measurements and energy dispersive X-ray analysis (EDX). The optical and electrical property of the thin films was also measured. The results showed that the pure, flatness, and well crystallized CuInS₂ thin films with good electrical and optical property had been obtained, meaning that the chemical bath deposition in acid conditions is suitable for the deposition of CuInS₂ thin films.     

Structural and photoluminescence investigation of ZnSe nanocrystals dispersed in organic and inorganic matrices

In this work, we report on the investigation of the effect of dispersion of zinc selenide (ZnSe) nanocrystallites into polystyrene (PS) and silica (SiO₂) thin films on their structural, morphological and photoluminescence properties. The ZnSe/PS nanocomposites thin films were synthesized by a direct dispersion of ZnSe crystallites into polymers solution, whereas the ZnSe–SiO₂ films were prepared on glass substrates by the sol–gel dip-coating technique. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-rays (EDX), UV–visible spectrophotometry and photoluminescence spectroscopy (PL) techniques have been used to study the structural, morphological and optical properties of the prepared nanocomposite thin films. XRD patterns have demonstrated the incorporation of cubic ZnSe in both organic and inorganic matrices. SEM micrographs have indicated that ZnSe dispersion in the films is homogeneous. UV–visible absorption spectra of the nanocomposite thin films have put into evidence that the dispersion of ZnSe nanocrystals in the thin film matrices improved their optical absorption. Room temperature PL spectra have shown that the addition of ZnSe enhanced the UV emission of PS and all the emission of SiO₂ thin films.     

Study of structural,optical and electrical parameters of ZnSe powder and thin films

Nanocrystalline ZnSe powder and thin film forms have been synthesized via chemical bath deposition technique. The ZnSe thin films are deposited onto ultrasonically clean glass substrates in an aqueous alkaline medium using sodium selenosulphate as Se^2? ion source. The ZnSe powder and thin film are characterized by structural, optical and electrical properties. It is confirmed from X-ray diffraction study that cubic phase is present in ZnSe thin film form with (111) as preferred orientation and hexagonal phase is present in ZnSe powder form with (100) as preferred orientation. Optical absorption measurement indicates the existence of direct allowed optical transition with a wide energy gap and blue shift in the fundamental edge has been observed in both cases. The optical band gap of ZnSe powder is greater than the thin film. The electrical conductivity (both dark and photoconductivity) measurements are also carried out in different temperature range and variation in activation energy has been calculated.     

Structural and optical properties of CdS thin films grown by chemical bath deposition

Cubic cadmium sulphide (CdS) thin films with (111) preferential orientation were prepared by chemical bath deposition (CBD) technique, using the reaction between NH₄OH, CdSO₄ and CS(NH₂)₂. The films properties have been investigated as a function of bath temperature and deposition time. Structural properties of the obtained films were studied by X-ray diffraction analysis. The structural parameters such as crystallite size have been evaluated. The transmission spectra, recorded in the UV visible range reveal a relatively high transmission coefficient (70%) in the obtained films. The transmittance data analysis indicates that the optical band gap is closely related to the deposition conditions, a direct band gap ranging from 2.0 eV to 2.34 eV was deduced. The electrical characterization shows that CdS films' dark conductivities can be controlled either by the deposition time or the bath temperature.     

Optimization of the structural, microstructural and optical properties of nanostructured Cr:ZnSe films deposited by magnetron co-sputtering for mid-infrared applications

In order to obtain optimally adherent films having the highest mid-infrared photoluminescence efficiency, nanostructured Cr²⁺:ZnSe films were deposited at room temperature on various substrates by magnetron radiofrequency co-sputtering of a SiO₂ target covered by a given number of ZnSe and Cr chips, at different Argon pressures and radiofrequency powers. The deposition parameter effect on the compositional, structural, microstructural and optical properties of the films has been investigated using X-ray reflectivity and diffraction, optical transmission spectroscopy, transmission electron microscopy, and photoluminescence studies. The corresponding films are composed by highly textured cubic and hexagonal ZnSe phases and exhibit strong tensile in-plane residual stresses. The evolution of the tensile residual stress and porosity values are consistent with the optical properties of the layers, and in particular the evolutions of both optical gap and refractive index. The room temperature mid-infrared (2-3 μm) photoluminescence measurements under direct excitation (1850 nm) revealed that chromium has been incorporated in the Cr²⁺ active state, and the corresponding fluorescence efficiency for an optimized thin film is only two times smaller than the one of a Cr²⁺:ZnSe reference bulk single crystal.     

Optimization of ZnSe-SiO2 nanostructures deposited by radio-frequency magnetron sputtering: Correlations between plasma species and thin film composition, structural and microstructural properties

ZnSe nanoparticle doped SiO₂ films have been grown on various substrates at different deposition temperatures, radio-frequency power, Argon pressures and substrate to target distances, by means of reactive magnetron sputtering. A detailed study of the correlations between plasma species and thin film composition, structure and morphology is investigated using X-ray reflectivity and diffraction, Raman and optical emission spectroscopies and Rutherford backscattering technique. It is evidenced that the most sensitive species in the plasma is the Selenium and that the optimal deposition parameters correspond to random stress-free films with a high content of quasi-stoechiometric ZnSe cubic nanocrystallites. A few amount of ZnSe in the hexagonal structure is also evidenced in these films. Using proper deposition parameters, the SiO₂/ZnSe proportion in the films and the mean ZnSe particles size around 3 nm are easily monitored.     

Microstructural properties of electrochemically synthesized ZnSe thin films

In this study, we report the electrosynthesis of zinc selenide (ZnSe) thin films on indium-doped tin oxide-coated glass substrates. The deposited ZnSe thin films have been characterized for structural (X-ray diffraction), surface morphological (scanning electron microscopy), compositional (energy dispersive analysis by X-rays), photo luminescence property, and optical absorption analysis. Formation of cubic structure with preferential orientation along the (111) plane was confirmed from structural analysis. In addition, the influence of the deposition potential on the microstructural properties of ZnSe is plausibly explained. The optical properties of ZnSe thin films are estimated using the transmission spectrum in the range of 400–1200 nm. The optical band gap energy of ZnSe thin films was found to be in the range between 2.52 and 2.61 eV. Photoluminescence spectra were observed at blue shifted band edge peak. The morphological studies depict that the spherical and cuboid shaped grains are distributed evenly over the entire surface of the film. The sizes of the grains are found to be in the range between 150 and 200 nm. The ZnSe thin film stoichiometric composition was observed at optimized deposition condition.     

Analysis of different vacuum annealing levels for ZnSe thin films as potential buffer layer for solar cells

In order to seek potential buffer layer, the influence of different vacuum annealing levels on physical properties to e-beam evaporated Zinc Selenide (ZnSe) thin films are meticulously investigated herein. The X-ray diffraction patterns of vacuum-annealed ZnSe films confirmed the prominent (111) reflection of the cubic phase where the crystallite size is found maximum (29 nm). The wavy optical transmittance spectra are observed for these ZnSe films, where higher transparency is observed in the visible region. A blue shift in the optical band gap (2.56–2.81 eV) and shrink in refractive index from 2.49 to 2.40 is observed with increasing vacuum levels. The HRTEM images demonstrated (111), (220), and (311) orientations of the lattice planes, and EDS patterns confirmed deposition of ZnSe films. The ohmic nature of the analyzed ZnSe thin films is validated by the I–V characteristics where the resistivity is found in the order of 10² Ω-cm for vacuum-annealed and 10⁴ Ω-cm for the pristine films. The AFM images indicated hill-like structures where the roughness is found to vary with vacuum level. The physical properties of ZnSe films are conspicuously tailored by vacuum annealing levels, and the findings recommend the use of?~?5?×?10^?3 mbar vacuum-annealed ZnSe thin films as potential buffer layer to the solar cells.

     

Indium sulfide buffer layers deposited by dry and wet methods

Indium sulfide (In₂S₃) thin films have been deposited on amorphous glass, glass coated by tin oxide (TCO) and crystalline silicon substrates by two different methods: modulated flux deposition (MFD) and chemical bath deposition (CBD). Composition, morphology and optical characterization have been carried out with Scanning Electron Microscopy (SEM), IR-visible-UV Spectrophotometry, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectrometer. Different properties of the films have been obtained depending on the preparation techniques. With MFD, In₂S₃ films present more compact and homogeneous surface than with CBD. Films deposited by CBD present also indium oxide in their composition and higher absorption edge values when deposited on glass.     

The photoluminescence and optical constant of ZnSe/SiO2 thin films prepared by sol–gel process

In this paper, ZnSe/SiO₂ thin films were prepared by sol–gel process. X-ray diffraction results indicate that the phase structure of ZnSe particles embedded in SiO₂ thin films is sphalerite (cubic ZnS). The dependence of ellipsometric angle ψ on wavelength λ of ZnSe/SiO₂ thin films was investigated by spectroscopic ellipsometers. The optical constant, thickness, porosity and the concentration of ZnSe/SiO₂ composite thin films were fitted according to Maxwell–Garnett effective medium theory. The thickness of ZnSe/SiO₂ thin films was also measured by surface profile. The photoluminescence properties of ZnSe/SiO₂ thin films were investigated by fluorescence spectrometer. The photoluminescence results reveal that the emission peak at 487 nm (2.5 eV) excited by 395 nm corresponds to the band-to-band emission of sphalerite ZnSe crystal (2.58 eV). Strong free exciton emission and other emission peaks corresponding to ZnSe lattice defects are also observed.     

Chemical bath deposition of MoS2 thin film using ammonium tetrathiomolybdate as a single source for molybdenum and sulphur

Molybdenum disulphide, MoS₂, thin films have been deposited by chemical bath deposition method on glass and quartz substrate using ammonium tetrathiomolybdate as a single source precursor for Mo and S and subjected to vacuum heat treatment at different temperatures. X-ray diffraction of as-deposited film indicated its amorphous character and showed the development of poorly crystalline MoS₂ thin film on increasing annealing temperature. The film has been characterized by energy dispersive X-ray analysis, X-ray photoelectron spectroscopy, scanning electron micrograph and the optical properties also have been studied.     

Synthesis of Fe alloyed PbS thin films and investigation of their photovoltaic properties

Lead sulfide (PbS) and iron (Fe)-alloyed PbS thin films with different Fe concentrations were synthesized by chemical bath deposition (CBD) technique, which is suitable for cost on glass substrates at room temperature. The structural, elemental and optical properties of the synthesized thin films were characterized by X-ray diffraction (XRD), energy dispersive X-ray (EDX) and optical absorption measurements, respectively. It was observed that Fe dopant alters crystal size and energy band gap of PbS although it does not change the structure of PbS. PbS and Fe-alloyed PbS thin films with different Fe concentrations were grown on zinc tin oxide (Zn₂SnO₄) substrates coated on fluorine-alloyed tin oxide conductive glasses to investigate their photovoltaic properties. Incident photon-to-current efficiency (IPCE) and current density (J)–voltage (V) measurements were carried out to determine IPCE (%) and power conversion efficiency (η%) values of thin films. As a result, it was observed that as the concentration of Fe dopant is increased in Fe-alloyed PbS thin films, there is an increase in η%.     

Growth of n-type and p-type ZnSe thin films using an electrochemical technique for applications in large area optoelectronic devices

ZnSe layers have been grown by a low temperature (65 °C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive analysis by X-rays (EDAX), glow discharge optical emission spectroscopy (GDOES) and X-ray fluorescence (XRF) for bulk material properties. A photo-electrochemical (PEC) cell and an optical absorption method have been used for determination of the electrical and optical properties of the thin films. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. The XPS spectra are similar to those of commercially available ZnSe and the EDAX, GDOES and XRF also indicate the presence of Zn and Se in the layers. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Optical absorption is maximum around 460 nm indicating a band gap of 2.7 eV. Annealing at 200 °C for 15 mins improves both the crystallinity of the layers and the photoresponse of the electrolyte/ZnSe liquid/solid Schottky junction. © 1998 Chapman & Hall     

Raman,photoluminescence analysis on Cu(InAl)Se2 thin films and the fabrication of Cu(InAl)Se2 based thin film solar cells

Cu(InAl)Se₂ (CIAS) thin films have been prepared by chemical bath deposition technique. Thickness of the prepared films has been measured by gravimetric technique. The structure, composition and optical transition as well as bandgap have been estimated by X-ray diffraction, energy dispersive X-ray analysis and spectrophotometer analysis. Raman analysis has been made on the prepared CIAS thin films to assign the fundamental lattice mode and to confirm the films crystallinity and stoichiometry. PL analysis has been carried out to find the effective mass of holes and electron, dielectric constant, the involved defects and their activation energy. Cu(InAl)Se₂-based solar cells with different types of buffer layers such as CdS, CdS:Cu, CdS:In were fabricated. The current and voltage were measured using an optical power meter and an electrometer and the fabricated solar cells were illuminated using 100 mW/cm² white light under AM1 conditions.     

Room temperature deposition of ZnSe thin films by successive ionic layer adsorption and reaction (SILAR) method

The zinc selenide (ZnSe) thin films are deposited onto glass substrate using relatively simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The films are deposited using zinc acetate sodium selenosulphate precursors. The concentration, pH, immersion and rinsing times and number of immersion cycles have been optimized to obtain good quality ZnSe thin films. The X-ray diffraction (XRD) study and scanning electron microscopy (SEM) studies reveals nanocrystalline nature alongwith some amorphous phase present in ZnSe thin films. Energy dispersive X-ray (EDAX) analysis shows that the films are Se deficient. From optical absorption data, the optical band gap ‘E_g’ for as-deposited thin film was found to be 2.8 eV and electrical resistivity in the order of 10⁷ Ω cm.     

Effect of complexing agent on growth process and properties of nanostructured Bi2S3 thin films deposited by chemical bath deposition method

Nanostructured Bi₂S₃ thin films have been prepared onto amorphous glass substrates by chemical bath deposition method at room temperature using bismuth nitrate and sodium thiosulphate as cationic and anionic precursors with EDTA as complexing agent in aqueous medium. The X-ray diffraction study reveals that the films deposited without the complexing agent are amorphous in nature and becomes nanocrystalline in the presence of EDTA. The resistivity for the films prepared from EDTA complexed bath is decreased due to the improvement in grain structure. The decrease in optical bandgap and activation energy is observed as the thickness of the film varies from 45 to 211 nm on account of the variation of the volume of complexing agent in reaction bath. Studies reveal that the growth mechanism of Bi₂S₃ gets affected in the presence of complexing agent EDTA and shows impact on structural, electrical and optical properties.     

Kinetics of the chemical bath deposition of ZnSe films

Thin films of ZnSe were obtained by chemical bath deposition from a solution containing ZnCl₂, hydrazine (NH₂)₂H₂O, NH₃, and Na₂SSeO₃. The influence of the concentration of the components and of the temperature on the growth rate was studied. A hypothesis for a ZnSe formation process is proposed. The technological parameters for the preparation of thin dense films of sphalerite structure with a high transparency in the solar spectrum region are defined.     

Electrical characterization of nanocrystalline SnSe and ZnSe thin films: effect of annealing

In this paper, experimental data on the electrical properties of as deposited and annealed nanocrystalline SnSe and ZnSe thin films are reported. The thin films of SnSe and ZnSe are deposited on glass substrate by chemical bath deposition method. The films are studied before and after thermal annealing at temperatures 473 K for 1 h. This annealing is done in vacuum of 2?×?10^?3 mbar. The various electrical parameters like dark conductivity, photoconductivity, activation energy, photosensitivity and carrier life time have been measured on these films before and after annealing.     

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

High-k gate dielectric HfO₂ thin films have been deposited on Si and quartz substrate by radio frequency magnetron sputtering. The structural and optical properties of HfO₂ thin films related to deposition power are investigated by X-ray diffraction (XRD), fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), ultraviolet–visible spectroscopy (UV–Vis), and spectroscopic ellipsometry (SE). Results confirmed by XRD have shown that the as-deposited HfO₂ thin films are not amorphous state but in monoclinic phase, regardless of deposition power. Analysis from FTIR indicates that an interfacial layer has been formed between the Si substrate and the HfO₂ thin film during deposition. AFM measurements illustrate that the root mean square (RMS) of the as-deposited HfO₂ thin films’ surface demonstrates an apparent reduction with the increase of deposition. Combined with UV–Vis and SE measurements, it can be noted reduction in band gap with an increase in power has been observed. Additionally, increase in refractive index (n) has been confirmed by SE.     

Chemical bath deposition of indium sulphide thin films: preparation and characterization

Indium sulphide (In₂S₃) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In₂S₃ thin films from thioacetamide deposition bath has been proposed. Films have been characterized with respect to their crystalline structure, composition, optical and electrical properties by means of X-ray diffraction, TEM, EDAX, optical absorption, TRMC (time resolved microwave conductivity) and RBS. Films on glass substrates were amorphous and on FTO (flourine doped tin oxide coated) glass substrates were polycrystalline ( phase). The optical band gap of In₂S₃ thin film was estimated to be 2.75 eV. The as-deposited films were photoactive as evidenced by TRMC studies. The presence of oxygen in the film was detected by RBS analysis.