K改性的BNT-BZT压电陶瓷制备与性能研究

无铅压电陶瓷是压电材料中一个重要的研究方向，为了能够取代目前广泛应用的含铅材料，需要进一步提高无铅陶瓷材料的各项性能，尤其是压电性能。BNT-BZT系陶瓷是钛酸铋钠（BNT）和锆钛酸钡（BZT）两相形成的固溶体，在BNT-BZT陶瓷体系中，富BNT和低Zr含量的区域存在准同型相界，在相界附近可以得到性能优良的无铅压电陶瓷，其性能以3大约150pC/N，居里温度在240℃左右，介电常数大约900。在BNT-BZT相界点处掺杂K离子，研究了K改性的BNT-BZT体系陶瓷的微观结构与性能。实验结果表明，以3达到165pC／N；居里温度达到270℃；烧结中出现了玻璃相，预烧温度和烧结温度相对于原体系都有适当降低。     

Ag^＋掺杂Na0．5K0．5NbO3无铅压电陶瓷的无压烧结及性能研究

铅基压电陶瓷在制备、使用及废弃处理过程中都会造成环境污染，随着环保意识的增强，无铅压电陶瓷必将逐步替代铅基压电陶瓷。Na0．5K0．5NbO3是一种很有潜力的无铅压电陶瓷，掺杂各种元素提升Na0．5K0．5NbO3陶瓷的压电性能成为当今研究热点之一。本研究以Ag2O、Na2CO3、K2CO3、Nb2O5为原料，经750℃焙烧分别合成了Na0．5K0.5NbO3和AgNbO3粉料，再经配料、混料与成型，在1060℃埋粉烧结，制备出Ag^＋掺杂的Na0.5K0．5NbO3无铅压电陶瓷（xAgNbO3-（1-x）Na0.5K0．5NbO3，ANKN），并在较宽成分范围内（Ag^＋含量，x=0-50at％）系统研究了Ag^＋掺杂对ANKN陶瓷性能的影响。XRD结果表明，ANKN陶瓷的主相为钙钛矿型结构，当x〉16at％，开始出现K5-75Nb10．85O30杂相，随着Ag掺杂量的增加，杂相的衍射峰增强。电学性能测试结果表明，当x〈20at％，随Ag掺杂量的增加ANKN陶瓷的压电常数、介电常数等略有升高；当x〉20at％，ANKN陶瓷的各项性能均开始降低；Ag掺加量为x=16at％时ANKN陶瓷性能最佳，压电常数d33达到110pC／N，平面机电耦合系数kp为30％，相对介电常数εr为358，居里温度Tc为300℃。     

（Bi0．5Na0．5）TiO3-（Bi0．5K0．5）TiO3陶瓷在准同型相界附近的铁电和压电性能

通过传统的固相烧结法合成（1-x）（Bi0.5Na0.5）TiO3-x（Bi0.5K0.5）TiO3陶瓷（x选取范围0．135-0．24）。先在850℃合成原料粉体，然后在1100～1200℃下烧结得到陶瓷样品。分析检测该体系陶瓷的结构以及铁电、压电性能。x射线衍射分析结果表明，该二元系准同型相界（MPB）区域位于x=0．165～0．225附近。对这一体系铁电和压电性能进行测试，并对其在准同型相界附近的电学性能发生变化的机理作了讨论。（Bi0．5Na0．5）TiO3-（Bi0.5K0.5）TiO3是一种很有应用前景的无铅压电陶瓷材料，值得进一步的研究和探索。同时，本实验还对密封烧结工艺对无铅压电陶瓷性能的影响作了初步的研究。     

Ag+掺杂Na0.5K0.5NbO3无铅压电陶瓷的无压烧结及性能研究

铅基压电陶瓷在制备、使用及废弃处理过程中都会造成环境污染,随着环保意识的增强,无铅压电陶瓷必将逐步替代铅基压电陶瓷.Na0.5K0.5NbO3是一种很有潜力的无铅压电陶瓷,掺杂各种元素提升Na0.5K0.5NbO3陶瓷的压电性能成为当今研究热点之一.本研究以Ag2O、Na2CO3、K2CO3、Nb2O5为原料,经750 ℃焙烧分别合成了Na0.5K0.5NbO3和AgNbO3粉料,再经配料、混料与成型,在1060 ℃埋粉烧结,制备出Ag+掺杂的Na0.5K0.5NbO3无铅压电陶瓷(xAgNbO3-(1-x)Na0.5K0.5NbO3,ANKN),并在较宽成分范围内(Ag+含量,x=0～50 at%)系统研究了Ag+掺杂对ANKN陶瓷性能的影响.XRD结果表明,ANKN陶瓷的主相为钙钛矿型结构,当x＞16 at%,开始出现K5.75Nb10.85O30杂相,随着Ag掺杂量的增加,杂相的衍射峰增强.电学性能测试结果表明,当x＜20 at%,随Ag掺杂量的增加ANKN陶瓷的压电常数、介电常数等略有升高;当x＞20 at%,ANKN陶瓷的各项性能均开始降低;Ag掺加量为x=16 at%时ANKN陶瓷性能最佳,压电常数d33达到110 pC/N,平面机电耦合系数kp为30%,相对介电常数εr为358,居里温度Tc为300 ℃.     

铋掺杂对（Na0．5K0．5）NbO3无铅压电陶瓷性能的影响

采用传统陶瓷工艺制备了掺铋 （Na0.5K0.5）NbO3（NKN）无铅压电致密陶瓷，研究了Bi2O3对 （Na0.5K0.5）NbO3晶体结构和压电性能的影响。结果表明：当Bi2O3含量小于0．7％（质量分数，下同）时，能得到具有纯钙钛矿结构的NKN基陶瓷，其烧结温度随着Bi2O3掺杂量的增加而升高，试样密度与纯NKN陶瓷相比有显著提高。 （Na0.5K0.5）NbO3压电常数d33，机电耦合系数kp、kt随Bi2O3含量的增加先升高而后降低，并在x=0．5％时达到最大值，而且机械品质因子Qm大大提高。当Bi2O3掺杂量为0．5％时， （Na0.5K0.5）NbO3无铅压电陶的密度达4．46g／cm^3，表现出优异的压电性能，d33=138pC／N，kp=46％，kt=44％，tanδ=2．9％，εr=466和Qm=167。     

（反应）模晶生长法制备NBT-6BT织构陶瓷的研究

以熔盐法合成的片状SrTiO3，Bi4Ti3O12为种晶，分别采用模晶生长法（TGG）和反应模晶生长发（RTGG）制备了具有〈001〉取向的0．94（Na1/2Bi1／2）TiO3-0．06BaTiO3（NBT-6BT）织构陶瓷。研究了不同种晶选择、流延和热处理工艺参数对陶瓷织构化程度、显微结构和压电性能的影响。结果表明，RTGG制备的织构陶瓷比TGG的在结构和性能等方面都具有优势，且用该方法以Bi4Ti3O12为种晶，制备出了高密度（f≥96％）、高织构度（F≈95％）、高性能（d33≈241pC／N）的NBT-6BT无铅压电陶瓷。     

BNT-BZT压电陶瓷准同相界处材料性能的研究

研究(1-x)(Bi0.5Na0.5)TiO3-xBa(Ti0.95Zr0.05)O3(BNT-BZT)体系陶瓷的准同型相界,以及陶瓷材料的微观结构和性能之间的关系.BNT-BZT陶瓷体系在富BNT和Zr含量低的区域存在准同型相界,在相界附近可能得到性能优良的无铅压电陶瓷,相界点在x≈0.1这个区域内.将BNT陶瓷和BZT陶瓷固溶后能够得到d33大于150 pC/N,居里温度在240℃左右,介电常数在900左右的性能良好的无铅压电陶瓷.     

铋基无铅压电陶瓷Bi0.5(Na0.82K0.18)0.5TiO3-BiCrO3的微观组织与电性能

采用传统陶瓷制备方法,制备一种新型无铅压电陶瓷 (1-x)Bi0.5(Na0.82K0.18)0.5TiO3-xBiCrO3 (BNKT-BCx).研究Bi基铁电体BiCrO3对BNKT-BCx陶瓷晶体结构和压电介电性能的影响.结果表明:在所研究的组成范围内,陶瓷材料的主体结构为纯钙钛矿固溶体,微量BiCrO3(x=0～0.02,摩尔分数)不改变陶瓷的晶体结构;当BiCrO3含量x＞0.02时,晶体结构由三方、四方共存转变为伪立方结构,并出现明显的第二相;当x=0.015时,d33=168 pC/N;当x=0.01时,kp=0.32,为该体系压电性能的最大值;随BiCrO3含量的增加,陶瓷的低温介电反常峰向低温移动,高温介电反常峰向高温移动,反铁电相区域增加,弥散指数增加.     

KNN-BT-BZ系无铅压电陶瓷的研究

采用传统电子陶瓷方法制备了(0.94-x)K0.49Na0.51NbO3-xBaTiO3-0.06BaZrO3(x=0～0.04mol,简称KNN-BT-BZ)体系无铅压电陶瓷,研究BaTiO3含量对该体系陶瓷的晶体结构与压电、介电性能的影响。结果表明:所研究组成范围内所有陶瓷样品均具有单一钙钛矿结构,随着BaTiO3含量x的增加,陶瓷的压电常数d33、平面机电耦合系数kp先增加后降低,机械品质因数Qm和介电常数εT33/ε0均增大,同时介电损耗tanδ减小。当x=0.03时,该组成陶瓷具有较好的压电性能:d33达322pC/N,kp为42%,Qm=193,εT33/ε0=423和tanδ=0.045。     

Sb2O3掺杂（Na0．84K0．16）0．5Bi0．5TiO3无铅压电陶瓷的压电与介电性能研究

采用传统陶瓷的制备方法，制备出Sb2O3掺杂的（Na0．84K0．16）0．5Bi0．5TiO3的无铅压电陶瓷。XRD分析表明，Sb2O3的掺杂量在0．1％～0．6％（质量分数）范围内都能够形成纯钙钛矿（ABO3）型固溶体。陶瓷材料的介电常数-温度曲线显示陶瓷在升温过程中存在两个介电常数温度峰，结合不同温度下的电滞回线观测，认为两个介电峰分别是材料的铁电-反铁电和反铁电-顺电相变，宽化的介电峰同时也表明所研究陶瓷具有驰豫铁电体特征。测试了不同组成陶瓷的压电性能，在Sb2O3掺杂量为0．1％时陶瓷的压电常数d33=124pC／N，为所研究组成中的最大值，平面机电耦合系数kp=24．87％，略有下降，材料的介电常数ε33^T／ε0和介质损耗tanδ则随掺杂量的增加而增加。     

Piezoelectric and dielectric properties of Lix（K0.46Na0.54） 1-xNb0.86Ta0.1 Sb0.04O3 lead-free ceramics

Lead-free piezoelectric ceramics Lix（K0.46Na0.54）1-xNb0.86Ta0.1Sb0.0403 （with x ranging from 0 to 0.1） were synthesized by conventional solid state sintering method. The effect of cationic substitution of Li for K and Na in the A sites of perovskite lattice on the structure, phase transition behavior and electrical properties were investigated. Morphotropic phase boundaries（MPB） between orthorhombic and tetragonal phase are found in the composition range of 0.06≤x≤0.08. Analogous to Pb（Zr, Ti）O3, the dielectric and piezoelectric properties are enhanced for the composition near the morphotropic phase boundary. The Li0.06（K0.46Na0.54）0.94- Nb0.86Ta0.1Sb0.04O3 ceramics show excellent electrical properties, that is, piezoelectric constant d33=215 pC/N, planar electromechanical coupling factor kp=41%, dielectric constant ε33^T /ε0=1 303, and dielectric loss tan δ=2.45%. The results indicate that Lix（K0.46Na0.54）1 -xNb0.86Ta0.1Sb0.0403 ceramic is a promising lead-free piezoelectric material.     

Microstructure and electrical properties of Ti-modified (Na0.5K0.5)(TiχNb1-χ)O3 lead-free piezoelectric ceramics

Ti-Modified (Na0.5K0.5)(TixNb1-x)O3 (NKNT) piezoelectric ceramics were fabricated by double-layer buffed powder process at 1020℃ for 2 h. The microstructures, and piezoelectric and dielectric properties of the lead-free NKNT ceramics were investigated. X-ray diffraction re-suits indicated that Ti4+ had diffused into the (Na0.5K0.5)NbO3 lattices to form a solid solution with a perovskite structure. The introducing of Ti into the (Na0.5K0.5)NbO3 solid solution effectively reduced the sintering temperature and densified the microstructure with a decreased grain size. The highest relative density reached more than 90%. The highest piezoelectric dielectric coefficient d33 and planar mode electro mechanical coupling coefficient kp were 110 pC/N and 19.5%, which were obtained in the NKNT ceramic with 1 mol% Ti. The piezoelectric properties of the NKNT ceramics were enhanced by aging in air for a period of time owing to the compensation of oxygen vacancies.     

LiNbO3掺杂(Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-BaTiO3无铅压电陶瓷的压电和铁电性能研究

用传统的固相反应法将LiNbO3(LN)加入(Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-BaTiO3制得无铅压电陶瓷。研究了该复合体系的压电和铁电性能,着重研究加入LiNbO3对0.852BNT-0.110BKT-0.038BT这一组分的相结构和电性能影响。加LN形成的材料结构分析(XRD)表明,LiNbO3能完全固溶入钙钛矿结构。加入0.05LN导致弥散相变,材料由四方相和菱方相两相共存转变为伪立方相,电滞回线呈现顺电相的特征。加入0.02LN形成的四元系电性能最佳:压电常数d33=245pC/N,机电耦合系数kp=0.20,kt=0.495,室温介电常数εr=1502,剩余极化强度Pr=26μC/cm2。在此基础上,研究了复合LN对去极化温度Td的作用,结果表明,引入LN会降低这一体系的去极化温度。     

Microstructure and electrical properties of Ti-modified (Na_(0.5)K_(0.5))(Ti_xNb_(1-x))O_3 lead-free piezoelectric ceramics

Ti-Modified (Na0.5K0.5)(TixNb1-x)O3 (NKNT) piezoelectric ceramics were fabricated by double-layer buried powder process at 1020°C for 2 h. The microstructures,and piezoelectric and dielectric properties of the lead-free NKNT ceramics were investigated. X-ray diffraction re-sults indicated that Ti4+ had diffused into the (Na0.5K0.5)NbO3 lattices to form a solid solution with a perovskite structure. The introducing of Ti into the (Na0.5K0.5)NbO3 solid solution effectively reduced the sintering temperature and...     

The effects of Bi(Mg2/3Nb1/3)O3 on piezoelectric and ferroelectric properties of K0.5Na0.5NbO3 lead-free piezoelectric ceramics

To improve the temperature stability of piezoelectric properties of Na_0.5K_0.5NbO₃ (KNN)-based ceramics, Bi(Mg_2/3Nb_1/3)O₃ (BMN) was used to modify Na_0.5K_0.5NbO₃ (KNN)-based ceramics by a conventional sintering technique. Piezoelectric and ferroelectric properties of 0.99K_0.5Na_0.5NbO₃-0.01Bi(Mg_2/3Nb_1/3)O₃ ceramics were studied. It is found that 0.01BMN-0.99KNN ceramics exhibits stable piezoelectric properties as the temperature changes due to the composition fluctuation on B sites (d₃₃ ≈ 130 pC/N, dielectric loss tg θ ≤ 5% in the range 25-300 °C). These results indicate that these materials are promising lead-free piezoelectric ceramic candidates for practical applications.     

Zr掺杂改性(Bi0.5Na0.5)0.91Pr0.02Ba0.07TiO3无铅铁电陶瓷的储能行为研究

通过固相烧结法微量掺杂Zr到(Bi0.5Na0.5)0.91Pr0.02Ba0.07TiO3无铅铁电陶瓷,对其相结构、微观形貌、储能行为及介电行为进行了研究。所有的样品都形成了单一的钙钛矿相,晶粒细小均匀。Zr的掺杂有效地提高了击穿场强,掺杂量为0.03 mol时陶瓷在场强138 kV/cm下最大有效储能密度达到1.38 J/cm3,储能效率达到52.44%,同时显示了稳定的高温铁电特性,并获得了较大的介电常数1150且保持稳定。     

传统工艺制备铌酸钾钠基无铅压电陶瓷的性能控制

介绍了采用传统陶瓷制备工艺,为获得晶粒细小、组织致密、性能良好的铌酸钾钠基无铅压电陶瓷,目前所采取的性能控制措施,即添加助烧剂、掺杂改性、添加第二组元、准同型相界的研究及调整n(Na)/n(K),来调整NKN陶瓷的性能。展望了NKN基无铅压电陶瓷的发展趋势。     

Influence of Sb<Subscript>2</Subscript>O<Subscript>3</Subscript> doping on the properties of KBT-NBT-BT lead-free piezoelectric ceramics

0.144(K0.5Bi0.5)TiO3-0.85(Na0.5Bi0.5)TiO3-0.006BaTiO3(KBT-NBT-BT) lead-free piezoelectric ceramics were prepared using a conventional solid state method.The influence of Sb2O3 doping on the crystal phase,surface microstructure and properties of the KBT-NBT-BT lead-free piezoelectric ceramics were investigated using X-ray diffraction(XRD),scanning electron microscope(SEM) and other analytical methods.The results show that all compositions are of pure perovskite structure solid states.Sb2O3 doping does not influence the microstructure of KBT-NBT-BT lead-free piezoelectric ceramics obviously in the Sb2O3 doping range of 0.1-0.5 wt.%.Sb2O3 functions as a donor when doped small amount,while functions as a acceptor when doped large amount.The piezoelectric strain constant(d33) increases first and then decreases;the dielectric constant(ε3T3/ε0) and the dielectric loss(tanδ) decrease continuously when the amount of Sb2O3 dopant increases.When the doping amount of Sb2O3 is 0.1 wt.%,the KBT-NBT-BT piezoelectric ceramics with good comprehensive properties are obtained,whose d33,ε3T3/ε0 and tanδ are 147 pC/N,1510 and 4.2%,respectively.     

(1-x)K0.5Na0.5NbO3-xLiBiO3无铅压电陶瓷的结构与压电性能（英文）

采用传统固相反应制备了(1-x)(K0.5Na0.5)NbO3–xLiBiO3[(1–x)KNN–xLB](x=0,0.0005,0.001,0.002,0.004,0.006,0.008,0.010)压电陶瓷,并分析研究了其微结构及电性能。结果表明,LB 掺杂的 KNN 陶瓷主要形成了钙钛矿结构,没有检测到第二相的存在,并且陶瓷的相结构出现直接由正交相过渡到立方相的"反常"转变;随着LB 掺杂量的增加,晶粒尺寸逐渐细化,陶瓷的压电常数d33、平面机电耦合系数kp先略有增加后显著下降,且分别在x=0.002和 x=0.001时达到最大值,分别为115pC/N和0.2701;陶瓷的介电常数εr随x增大先增加后略有降低,当 x=0.006时获得最大值,为871.8。