Modeling of optical devices for the design of multistage interconnection network systems

Guidelines of the modeling of an all-optical architecture is presented. This basic architecture is universal and flexible. It can be used as the switching building block for a number of interconnection networks. The power analysis of an all optical buffering architecture [1] that can be interfaced with such an element is discussed. The modeling analysis is given in terms of the switch model, the multistage model and the power analysis of the optical buffer. The architecture uses bistable optical devices such as Fabry-Perot etalons, SEED and S-SEED. A number of important issues remain to be addressed, such as the use of different nonlinear optical devices, synchronization, and simulation.     

All-optical regenerator

An all-optical regenerator has been demonstrated using two self-electro-optic effect devices (SEED) and a local pump laser. The regenerator's optical signal processing included clock recovery, data retiming and signal amplification. A 2 dB optical gain was attained at a 5 kbit/s data rate     

微光电子集成灵巧象素器件

我们采用 MBE生长出大周期 Ga As/ Al Ga As多量子阱 (MQW)外延材料 ,研制了适用于倒装焊结构的自电光效应器件 (SEED)列阵 ,并与 Si CMOS电路通过倒装焊工艺集成为微光电子集成灵巧象素器件。通过对光电特性测试表明 ,器件具有良好的光探测和光调制性能。     

Quantum-well SEED optical oscillators

Oscillation at 110 MHz in a GaAs-GaAlAs quantum-well SEED (self-electrooptic effect device) optical oscillator is considered. Optimization of device length and optical pump wavelength for high-frequency oscillation is discussed. Frequency tuning is obtained by adjusting the oscillator bias voltage or optical pump power, and the oscillator can be injection locked to modulated optical signals. Frequency fluctuations caused by perturbative Gaussian noise and 1/f frequency noise are observed; the 1/f noise in an 8.5-MHz oscillator limited the minimum frequency variance to 230 Hz²     

硅光学双稳态(SOB)器件

利用作者近期研制的硅光电表面负阻晶体管（PNEGIT）或光电“∧”双极晶体管（PLBT）两种硅光电负阻器件,提出并成功地实现了一种新型的硅光学双稳态器件。即以PNEGIT（或PLBT）作为光的输入器件,以其驱动一发光管（LED）作为光输出器件,由于PNEGIT和PLBT都具有光电负阻特性,致使在输出光功率（Pout）-输入光功率（Pin）特性上出现逆时针方向的光学双稳回线。这种器件具有光开关、光逻辑、光放大、光存贮、光眼福等多种功能,扩展了硅光电器件在光逻辑、光计算、光通讯等领域中的应用。     

CMOS／SEED光电子集成Crossbar互连网络的实现及控制

本文报道了光电子集成 Crossbar互连网络的光学实现及电控制方法。采用带光窗口的 CMOS/SEED灵巧像元列阵作为逻辑控制交换开关节点 ,输出光强的高低态对比度约为 1.4。由波长为 85 0 nm的半导体激光器发出的光束经过位相计算全息光栅分束器分束 ,形成 8× 2的光束阵列 ,为 CMOS/SEED光调制器窗口列阵提供泵浦光源 ,采用精密加工的高精度二维光纤阵列作为信号输入、输出接口器件。采用计算机并口产生电控制信号实现网络的交叉连接功能 ,编制了相应的控制软件。实验上完成了 16× 16 Crossbar光互连网络的交换功能     

Multiple Quantum Well SEED Arrays for Flip-Chip Bonding Optoelectronic Smart Pixels

A modulator-based optoelectronic-very large scale integration (OE-VLSI) circuittechnology,being developed at Bell Laboratories[1 ,2 ] ,is now existing and providingthousands of optical input and output to foundry-grade VLSI silicon CM...     

Carrier collection efficiency effects and improvements ofelectroabsorption devices with different barrier structures

Self-electrooptic effect devices (SEEDs) with both thick (60 Å) and thin (35 Å) quantum-well barriers were studied experimentally. Relevant device properties including responsivity, carrier collection efficiency, switching, and optical bistability behavior are compared. SEED modulator photocurrent and reflectivity data are analyzed and shown to predict S-SEED behavior. A simple yet powerful optical technique for measuring the light utilization efficiency and the carrier collection efficiency η is described and used to compare different device mesa sizes and barrier structures. The effects of η on device performance are expounded. For thin-barrier SEEDs, η is substantially improved, approaching 100%, even at bias voltages approaching zero and for small device structures     

InGaAs/GaAs多量子阱SEED面阵结构特性与设计

讨论了谐振腔中的 DBR对 In Ga As/ Ga As多量子阱 SEED面阵光反射特性的影响 .采用 In Ga As/ Ga As作为多量子阱 SEED器件的有源区 ,从而获得了 980 nm工作波长 .设计和分析了 In Ga As/ Ga As多量子阱 SEED中的一种用于倒装焊的新型谐振腔结构 .多量子阱材料是用 MOCVD系统生长 ,利用微区光反射谱、PL 谱以及 X射线双晶衍射对多量子阱材料进行了测量和分析 ,测量结果表明多量子阱材料具有良好的质量 ,证明了器件结构的设计和分析是准确的     

Free-space digital optical systems

Within the past 15 years there has been significant progress in the development of two-dimensional arrays of optical and optoelectronic devices. This progress has, in turn, led to the construction of several free-space digital optical system demonstrators. The first was an optical master-slave flip-flop using Hughes liquid-crystal light valves as optical logic gates and computer-generated holograms as the gate-to-gate interconnects. This was demonstrated at USC in 1984. Since then there have been numerous demonstrations of free-space digital optical systems including a simple optical computing system (1990) and five switching fabrics designated System₁ (1988), System₂ (1989), System₃ (1990), System₄ (1991) and System₅ (1993). The main focus of this paper will be to describe the five switching fabric demonstrators constructed by AT&T in Naperville, IL. The paper will begin with an overview of the SEED technology which was the device platform used by the demonstrators. This will be followed by a discussion of the architecture, optics, and optomechanics developed for each of the five demonstrators     

Multiple Quantum Well SEED Arrays for Flip-Chip Bonding Optoelectronic Smart Pixels

The investigation on GaAs/AlGaAs multiple quantum well Self Electro-optic Effect Device (SEED) arrays for flip-chip bonding optoelectronic smart pixels has been reported. In order to increase the absorption of the intrinsic region, the number of quantum well periods is defined as 90 pairs. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays.     

InGaAs／GaAs多量子阱SEED设计和特性研究

本文分析了计算了InGaAs/GaAs多量子阱（SEED）的激子吸收行为,对器件的多量子阱及谐振腔结构进行了设计和理论分析,用MOCVD系统生长了多量子阱外延材料,并且对器件的反射谱和光电流谱特性进行了测试。     

Power-speed product of an optical flip-flop memory with opticalfeedback

Evaluation of optical logic gate devices in terms of a power-speed (switching time) product is discussed. An example is given for a simply fabricated optoelectronic flip-flop circuit utilizing an optical feedback. The minimum power-speed products for set and reset operations are 5 and 35 pJ, respectively. They are very small compared with previously reported optical nonlinear or bistable devices. The figure of merit is decreased by monolithic integration, by which an optical computation can be realized     

A novel optical bistable multiple-quantum-well phase modulator

The authors present a new type of optically bistable phase modulator utilizing a self electrooptic effect device (SEED) integrated with an electrooptic wavelength modulator. An electrically bistable SEED, operating on the principle of the quantum-confined Stark effect, controls the bias voltage across an electrooptic waveguide phase modulator to produce optical bistability. A control signal at 0.848 μm, corresponding to the first electron to heavy hole exciton transition in GaAs/AlGaAs multiple-quantum-well is used to switch 1.152 μm light propagating through a waveguide in a direction normal to the control beam     

GaAs/AlGaAs多量子阱FET-SEED灵巧象元

将GaAs／AlGaAs多量子阱光探测器、光调制器与GaAs场效应晶体管（FET）混合集成,构成FET-SEED灵巧象元。光探测器和光调制器均为反射型自电光效应器件（SEED）,光源为骨子阱半导体激光器。测出的光输出Pout／光输入Pin特性表明,光输入信号对光输出信号有明显的调制作用,光输入信号较小的变化可以导致光输出信号较大的变化。     

Smart windows switch on the light

Optical switching devices for regulating incident solar energy that can replace traditional windows in buildings, vehicles, and aircraft are discussed. The chromogenic material in these smart windows exhibits a large change in optical properties with variation in applied electrical field, charge, light intensity, spectral composition, or temperature. The optical change transforms the material from a highly transmitting state to a partly reflecting (or absorbing) state over all or part of the visible and solar spectra. The optical switching can be activated electrically or nonelectrically. Electrically activated types, including electrochromic, liquid-crystal, and dispersed-particle (electrophoretic) devices, as well as devices based on reversible electrodeposition, and nonelectrically activated types, including devices based on photochromic and thermochromic materials, are described     

The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation

We report extended experimental and theoretical results for the quantum well self-electrooptic effect devices. Four modes of operation are demonstrated: 1) optical bistability, 2) electrical bistability, 3) simultaneous optical and electronic self-oscillation, and 4) self-linearized modulation and optical level shifting. All of these can be observed at room-temperature with a CW laser diode as the light source. Bistability can be observed with 18 nW of incident power, or with 30 ns switching time at 1.6 mW with a reciprocal relation between switching power and speed. We also now report bistability with low electrical bias voltages (e.g., 2 V) using a constant current load. Negative resistance self-oscillation is observed with an inductive load; this imposes a self-modulation on the transmitted optical beam. With current bias, self-linearized modulation is obtained, with absorbed optical power linearly proportional to current. This is extended to demonstrate light-by-light modulation and incoherent-to-incoherent conversion using a separate photodiode. The nature of the optoelectronic feedback underlying the operation of the devices is discussed, and the physical mechanisms which give rise to the very low optical switching energy (∼4 fJ/ μm²) are discussed.     

有机材料在光限制中的应用

对光限制器件的特性进行了简单的评述,并对由自散焦过程产生光限制的机理进行了分析.采用z-扫描方法对有机材料分散红一的非线性折射过程和光限制特性进行了实验研究.对其结果进行了分析讨论,这种分析对于以自作用效应产生最佳光限制效应是十分有用的.     

有机材料在光限制中的应用

对光限制器件的特性进行了简单的评述,并对由自散焦过程产生光限制的机理进行了分析.采用z-扫描方法对有机材料分散红一的非线性折射过程和光限制特性进行了实验研究.对其结果进行了分析讨论,这种分析对于以自作用效应产生最佳光限制效应是十分有用的.