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1.
Ti3SiC2/HAp composites with different Ti3SiC2 volume fractions were fabricated by spark plasma sintering (SPS) at 1200°C. The effects of Ti3SiC2 addition on the mechanical properties and microstructures of the composites were investigated. The bending strength and fracture toughness of the composites increased with increasing of Ti3SiC2 content, whereas the Vickers hardness decreased. The bending strength and fracture toughness reached 252±10 MPa and 3.9±0.1 MPa·m1/2, respectively, with the addition of 50 vol% Ti3SiC2. The increases in the mechanical properties were attributed to the matrix strengthening and interactions between cracks and the Ti3SiC2 platelets.  相似文献   

2.
Composites in the SiC–TiC–Ti3SiC2 system were synthesized using reactive hot pressing at 1600°C. The results indicate that addition of Ti3SiC2 to SiC leads to improved fracture toughness. In addition, high microhardness can be retained if TiC is added to the material. The best combination of properties obtained in this study is K I c =8.3 MPa·m1/2 and H v=17.6 GPa. The composition can be tailored in situ using the decomposition of Ti3SiC2. Ti3SiC2 decomposed rapidly at temperatures above 1800°C, but the decomposition could be conducted in a controlled manner at 1750°C. This can be used for synthesis of fully dense composites with improved properties by first consolidating to full density a softer Ti3SiC2-rich initial composition, and then using controlled decomposition of Ti3SiC2 to achieve the desired combination of microhardness and fracture toughness.  相似文献   

3.
Tribological properties of Ti3SiC2 and Al2O3-reinforced Ti3SiC2 composites (10 and 20 vol% Al2O3) were investigated by using an AISI-52100 bearing steel ball dryly sliding on a linear reciprocating athletic specimen. The friction coefficients were found varying only in a range of 0.1 under the applied loads (2.5, 5, and 10 N), and the wear rates of the composites decreased with increasing Al2O3 content. The enhanced wear resistance is mainly attributed to the hard Al2O3 particles nail the surrounding soft matrix and decentrale the shear stresses under the sliding ball to reduce the wear losses.  相似文献   

4.
Titanium silicon carbide (Ti3SiC2) and Ti3SiC2-based composite powders were synthesized by isothermal treatment in an inert atmosphere as a function of initial compositions (mixtures). A high content of TiC was obtained in the final product when the initial mixtures contained free carbon. The use of TiC as a reagent was unsuccessful in obtaining Ti3SiC2. High Ti3SiC2 conversion was found for the initial mixtures containing SiC as the main source for silicon and carbon. An initial mixture with a large excess of silicon, 3Ti/1.5SiC/0.5C, was needed to obtain high-purity Ti3SiC2. A reaction mechanism, where Ti3SiC2 nucleates on Ti5Si3C crystals and grows by long-range diffusion of Ti and C, is proposed. The reaction mechanism was proposed to be based on silicon loss during the formation of Ti3SiC2.  相似文献   

5.
To evaluate the lubrication compatibility of SiC-reinforced Ti3SiC2-based composites, i.e., a Ti3SiC2/SiC composite, with water and alcohol, sliding experiments were conducted under dry condition and lubricated with water and C2H5OH. The friction and wear of the Ti3SiC2/SiC composite decreased in the order of dry condition, in water, and in C2H5OH. The worn surfaces indicated that oxide masses, which caused oxidation wear and abrasive wear, were formed by tribo-oxidation on the sliding surface under the dry condition and in water, while tribo-oxidation scarcely occurred in C2H5OH.  相似文献   

6.
Mechanical alloying (MA) has been used to synthesize Ti3SiC2 powder from the elemental Ti, Si, and C powders. The MA formation conditions of Ti3SiC2 were strongly affected by the ball size for the conditions used. MA using large balls (20.6 mm in diameter) enhanced the formation of Ti3SiC2, probably via an MA-triggered combustion reaction, but the Ti3SiC2 phase was not synthesized only by the MA process using small balls (12.7 mm in diameter). Fine powders containing 95.8 vol% Ti3SiC2 can be obtained by annealing the mechanically alloyed powder at relatively low temperatures.  相似文献   

7.
Ti/Si/2TiC powders were prepared using a mixture method (M) and a mechanical alloying (MA) method to fabricate Ti3SiC2 at 1200°–1400°C using a pulse discharge sintering (PDS) technique. The results showed that the Ti3SiC2 samples with <5 wt% TiC could be rapidly synthesized from the M powders; however, the TiC content was always >18 wt% in the MA samples. Further sintering of the M powder showed that the purity of Ti3SiC2 could be improved to >97 wt% at 1250°–1300°C, which is ∼200°–300°C lower than that of sintered Ti/Si/C and Ti/SiC/C powders using the hot isostatic pressing (HIPing) technique. The microstructure of Ti3SiC2 also could be controlled using three types of powders, i.e., fine, coarse, or duplex-grained, within the sintering temperature range. In comparison with Ti/Si/C and Ti/SiC/C mixture powders, it has been suggested that high-purity Ti3SiC2 could be rapidly synthesized by sintering the Ti/Si/TiC powder mixture at relatively lower temperature using the PDS technique.  相似文献   

8.
Ti3SiC2 is synthesized by self-propagating high-temperature synthesis (SHS) of elemental titanium, silicon, and graphite powders. The reaction paths and structure evolution are studied in situ during the SHS of the 3Ti+Si+2C mixture by time-resolved X-ray diffraction coupled with infrared thermography. The proposed reaction mechanism suggests that Ti3SiC2 might be formed from Ti–Si liquid phase and solid TiC x . Finally, the effect of the powders starting composition on the Ti3SiC2 synthesis is studied. For the investigated initial mixtures, TiC x is always formed as a major impurity together with the Ti3SiC2 phase.  相似文献   

9.
Formation of titanium silicon carbide (Ti3SiC2) by mechanical alloying (MA) of Ti, Si, and C powders at room temperature was experimentally investigated. A large amount of granules less than 5 mm in size, consisting of Ti3SiC2, smaller TiC particles, and other silicides, have been obtained after ball milling for only 1.5 h. The effect of excess Si in the starting powders on the formation of Ti3SiC2 was studied. The formation mechanism of Ti3SiC2 was analyzed. It is believed that a mechanically induced self-propagating reaction is ignited during the MA process. A possible reaction mechanism was proposed to explain the formation of the final products.  相似文献   

10.
In this article, the second part of a two-part study, we report on the mechanical behavior of Ti3SiC2. In particular, we have evaluated the mechanical response of fine-grained (3–5 μm) Ti3SiC2 in simple compression and flexure tests, and we have compared the results with those of coarse-grained (100–200 μm) Ti3SiC2. These tests have been conducted in the 25°–1300°C temperature range. At ambient temperature, the fine- and coarse-grained microstructures exhibit excellent damage-tolerant properties. In both cases, failure is brittle up to ∼1200°C. At 1300°C, both microstructures exhibit plastic deformation (>20%) in flexure and compression. The fine-grained material exhibits higher strength compared with the coarse-grained material at all temperatures. Although the coarse-grained material is not susceptible to thermal shock (up to 1400°C), the fine-grained material thermally shocks gradually between 750° and 1000°C. The results presented herein provide evidence for two important aspects of the mechanical behavior of Ti3SiC2: (i) inelastic deformation entails basal slip and damage formation in the form of voids, grain-boundary cracks, kinking, and delamination of individual grains, and (ii) the initiation of damage does not result in catastrophic failure, because Ti3SiC2 can confine the spatial extent of the damage.  相似文献   

11.
In this work, we report on the interdiffusion of Ge and Si in Ti3SiC2 and Ti3GeC2, as well as that of Nb and Ti in Ti2AlC and Nb2AlC. The interdiffusion coefficient, D int, measured by analyzing the diffusion profiles of Si and Ge obtained when Ti3SiC2–Ti3GeC2 diffusion couples are annealed in the 1473–1773 K temperature range at the Matano interface composition (≈Ti3Ge0.5Si0.5C2), was found to be given by
D int increased with increasing Ge composition. At the highest temperatures, diffusion was halted after a short time, apparently by the formation of a diffusion barrier of TiC. Similarly, the interdiffusion of Ti and Nb in Ti2AlC–Nb2AlC couples was measured in the 1723–1873 K temperature range. The D int for the Matano interface composition, viz. ≈(Ti0.5,Nb0.5)2AlC, was found to be given by
At 1773 K, the diffusivity of the transition metal atoms was ≈7 times smaller than those of the Si and Ge atoms, suggesting that the former are better bound in the structure than the latter.  相似文献   

12.
The effect of vacuum annealing on the thermal stability and phase transition of Ti3SiC2 has been investigated by X-ray diffraction (XRD), neutron diffraction, synchrotron radiation diffraction, and secondary ion mass spectroscopy (SIMS). In the presence of vacuum or a controlled atmosphere of low oxygen partial pressure, Ti3SiC2 undergoes a surface dissociation to form nonstoichiometric TiC and/or Ti5Si3C x that commences at ∼1200°C and becomes very pronounced at ≥1500°C. Composition depth profiling at the near surface of vacuum-annealed Ti3SiC2 by XRD and SIMS revealed a distinct gradation in the phase distribution of TiC and Ti5Si3C x with depth.  相似文献   

13.
Ti3SiC2 has many salient properties including low density, high strength and modulus, damage tolerance at room temperature, good machinablity, and being resistant to thermal shock and oxidation below 1100°C. However, the low hardness and poor oxidation resistance above 1100°C limit the application of this material. The poor oxidation resistance at temperatures above 1100°C was because of the absence of protective layer in the scale and the presence of TiC impurity phase. TiC impurity could be eliminated by adding a small amount of Al to form Ti3Si(Al)C2 solid solutions. Although the high-temperature oxidation resistance was significantly improved for the Ti3Si(Al)C2 solid solutions, the strength at high temperatures was lost. One important way to enhance the high-temperature strength is to incorporate hard ceramic particles like SiC. In this article, we describe the in situ synthesis and simultaneous densification of Ti3Si(Al)C2/SiC composites using Ti, Si, Al, and graphite powders as the initial materials. The effect of SiC content on high-temperature mechanical properties and oxidation resistance were investigated. The mechanisms for the improved high-temperature properties are discussed.  相似文献   

14.
In the present study, the room-temperature properties of Al2O3-Ti3SiC2 composites with different Ti3SiC2 contents are determined. The composites are prepared by attrition milling Al2O3 and Ti3SiC2 mixture powders followed by spark plasma sintering (SPS) under vacuum. From a closer examination of the dependencies of the electrical conductivity on compositions in this system, we determined the percolation threshold at which an interconnected network of electrically conductive phase arises. Since the hardness of Ti3SiC2 is lower than that of Al2O3, the Vickers hardness decreased with the increasing of Ti3SiC2 content while the fracture toughness and the strength increased. The maximum strength (673 MPa) and the maximum toughness (9.3 MPa·m1/2) were reached in the pure Ti3SiC2 material.  相似文献   

15.
The present contribution reports the unlubricated friction and wear properties of Ti3SiC2 against steel. The fretting experiments were performed under varying load (1–10 N) and the detailed wear mechanism is studied using SEM-EDS, Raman spectroscopy, and atomic force microscopy. Under the selected fretting conditions, Ti3SiC2/steel tribocouple exhibits a transition in friction as well as wear behavior with coefficient of friction varying between 0.5 and 0.6 and wear rate in the order of 10−5 mm3·(N·m)−1. Raman analysis reveals that the fretting wear is accompanied by the triboxidation with the formation of TiO2, SiO2, and Fe2O3. A plausible explanation for the transition in friction and wear with load is proposed.  相似文献   

16.
We measured the volume thermal expansion of Ti3SiC2 from 25° to 1400°C using high-temperature X-ray diffraction using a resistive heated cell. A piece of molybdenum foil with a 250 μm hole contained the sample material (Ti3SiC2+Pt). Thermal expansion of the polycrystalline sample was measured under a constant argon flow to prevent oxidation of Ti3SiC2 and the molybdenum heater. From the lattice parameters of platinum (internal standard), we calculated the temperature by using thermal expansion data published in the literature. The molar volume change of Ti3SiC2 as a function of temperature in °C is given by: V M (cm3/mol)=43.20 (2)+9.0 (5) × 10−4 T +1.8(4) × 10−7 T 2. The temperature variation of the volumetric thermal expansion coefficient is given by: αv (°C−1)=2.095 (1) × 10−5+7.700 (1) × 10−9 T . Furthermore, the results indicate that the thermal expansion anisotropy of Ti3SiC2 is quite mild in accordance with previous work.  相似文献   

17.
The reactive sintering of 3Ti/SiC/C to form the layered ternary carbide Ti3SiC2 was studied in situ by time-resolved neutron powder diffraction. A number of intermediate processes occur during the synthesis beginning with the α-β transition in Ti. Concurrent with the α-β transition, two intermediate phases, TiC x and Ti5Si3C x ( x ≤ 1), form. These phases account for almost the entire sample in the range 1500–1600°C beyond which they react with each other and a small amount of free C to form the product phase Ti3SiC2.  相似文献   

18.
In this article, the first part of a two-part study, we report the reaction path and microstructure evolution during the reactive hot isostatic pressing of Ti3SiC2, starting with titanium, SiC, and graphite powders. A series of interrupted hot isostatic press runs have been conducted as a function of temperature (1200°–1600°C) and time (0–24 h). Based on X-ray diffractometry and scanning electron microscopy, at 1200°C, the intermediate phases are TiC x and Ti5Si3C x . Fully dense, essentially single-phase samples are fabricated in the 1450°–1700°C temperature range. The time-temperature processing envelope for fabricating microstructures with small (3–5 μm), large (∼200 μm), and duplex grains, in which large (100–200 μm) Ti3SiC2 grains are embedded in a much finer matrix, is delineated. The microstructure evolution is, to a large extent, determined by (i) the presence of unreacted phases, mainly TiC x , which inhibits grain growth; (ii) a large anisotropy in growth rates along the c and a directions (at 1450°C, growth normal to the basal planes is about an order of magnitude smaller than that parallel to these planes; at 1600°C, the ratio is 4); and (iii) the impingement of grains. Ti3SiC2 is thermally stable under vacuum and argon atmosphere at temperatures as high as 1600°C for as long as 24 h. The influence of grain size on the mechanical properties is discussed in the second part of this study.  相似文献   

19.
Polycrystalline bulk samples of Ti3SiC2 were fabricated by reactively hot-pressing Ti, graphite, and SiC powders at 40 MPa and 1600°C for 4 h. This compound has remarkable properties. Its compressive strength, measured at room temperature, was 600 MPa, and dropped to 260 MPa at 1300°C in air. Although the room-temperature failure was brittle, the high-temperature load-displacement curve shows significant plastic behavior. The oxidation is parabolic and at 1000° and 1400°C the parabolic rate constants were, respectively, 2 × 10−8 and 2 × 10−5 kg2-m−4.s−1. The activation energy for oxidation is thus =300 kJ/mol. The room-temperature electrical conductivity is 4.5 × 106Ω−1.m−1, roughly twice that of pure Ti. The thermal expansion coefficient in the temperature range 25° to 1000°C, the room-temperature thermal conductivity, and the heat capacity are respectively, 10 × 10−6°C−1, 43 W/(m.K), and 588 J/(kgK). With a hardness of 4 GPa and a Young's modulus of 320 GPa, it is relatively soft, but reasonably stiff. Furthermore, Ti3SiC2 does not appear to be susceptible to thermal shock; quenching from 1400°C into water does not affect the postquench bend strength. As significantly, this compound is as readily machinable as graphite. Scanning electron microscopy of polished and fractured surfaces leaves little doubt as to its layered nature.  相似文献   

20.
The evolution of deformation—;microfracture damage below Hertzian contacts in a coarse-grain Ti3SiC2 is studied. The Hertzian indentation stress—;strain response deviates strongly from linearity beyond a well-defined maximum, with pronounced strain—;softening, indicating exceptional deformability in this otherwise (elastically) stiff ceramic. Surface and subsurface ceramographic observations reveal extensive quasi-plastic microdamage zones at the contact sites. These damage zones are made up of multiple intragrain slip and intergrain shear failures, with attendant microfracture at high strains. No ring cracks or other macroscopic cracks are observed on or below the indented surfaces. The results suggest that Ti3SiC2 may be ideally suited to contact applications where high strains and energy absorption prior to failure are required.  相似文献   

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