热处理温度对TiO2薄膜结构及电色性能的影响

采用溶胶-凝胶法在镀有ITO透明电极的玻璃上制备了TiO2电致变色薄膜,用XRD、FT-IR、SEM、TG-DTA、分光光度计和电化学工作站等研究了热处理温度对其成分、结构和电致变色性能的影响.结果表明:350℃以下,薄膜呈非晶态;450℃时形成锐钛矿结构,同时出现网状分布的缝隙.薄膜具有较弱的阴极电致变色效应,对可见光的调制幅度随温度的升高而降低.当温度从120℃上升到450℃时,样品的K值由0.56升高到0.93,循环寿命由不足50次增加到10000次以上,注入电荷密度则由14.12 mC/cm2下降到6.79 mC/cm2.350℃处理的薄膜具有较好的综合性能,适于制备透射型电致变色器件的对电极.     

制备NiO电致变色薄膜的低电压反应离子镀工艺研究

采用低电压反应离子镀工艺制备NiO电致变色薄膜,重点研究不同的氧气分压对NiO薄膜的电致变色特性的影响,通过与普通电子束蒸发工艺制备的NiO薄膜进行物理性能和电致变色性能的比较,以及在塑料基板上制备NiO电致变色薄JP2 膜的讨论,总结出低电压反应离子镀技术制备NiO电致变色薄膜的工艺和优势.     

TiO_2薄膜的制备及其电致变色性能

采用溶胶-凝胶工艺在ITO导电玻璃基片表面制备了均匀致密的TiO2薄膜。采用XRD和TG-DTA表征了薄膜的结构和热重特性,使用电化学工作站和紫外-可见分光光度计研究了TiO2薄膜的电致变色性能。结果表明,外加电压控制在±2V、热处理温度为250℃时,TiO2薄膜为不定形结构,具有较好的电致变色特性,注入电荷密度为5.13mC·cm-2,循环可逆性K值为0.49,着色态透光率在60%以下,着色态、褪色态光谱透过率相差20%。     

一种新型基于纳米TiO_2薄膜的电子纸器件(英文)

近年来,在电致变色领域基于甲基紫精修饰高比表面积的纳米TiO2薄膜电极取得了巨大的进步,并将这项技术推向商业化.本文介绍了一种由有机变色分子修饰纳米晶TiO2薄膜电极而组装成的电致变色器件,通过"嫁接"在甲基紫精分子上的磷酸基和纳米TiO2薄膜电极表面的羟基化学吸附,我们得到了具有良好电致变色性能的"电子纸".本文采用的电解质是0.05mol/L的高氯酸锂和0.05mol/L的二茂铁的1,4丁内酯溶液,对电极为透明导电玻璃.实验证明该电致变色器件具有很高的稳定性,并达到了毫秒级的响应速度,在未来显示领域"电子纸"的商业化进程中具有很大的潜力.     

制备WO3电致变色薄膜的低压反应离子镀工艺研究

在电子束蒸发镀膜的基础上,引入低压反应离子镀工艺制备WO3电致变色薄膜,研究不同氧分压对WO3薄膜电致变色特性的影响,实验结果表明制备时选择工作气体氩气分压为2×10-2 Pa,氧分压为4×10-2 Pa时,薄膜具有最好的电致变色特性和最大的变色范围.进而采用低压反应离子镀工艺成功地实现在塑料基板上制备WO3薄膜,并对其电致变色特性进行了研究.同时对比了采用普通电子束蒸发镀膜制备的WO3薄膜的电致变色特性.     

TiO2基底对MoO3/TiO2复合薄膜电致变色性能的影响EI北大核心CSCD

采用水热法首先在导电玻璃上制备TiO2纳米线,随后电沉积涂覆MoO3薄膜,成功制备MoO3/TiO2复合薄膜。利用电化学测试与光谱测试,得到MoO3/TiO2复合薄膜的扩散系数、着色/退色的响应时间、光密度、电致变色可逆性和着色效率等参数,研究不同水热生长时长TiO2纳米线基底对MoO3/TiO2复合薄膜的电致变色性能的影响。结果表明:水热生长6h TiO2纳米线的MoO3/TiO2复合薄膜具有最佳的电致变色性能,扩散系数为2.86×10^-12 cm^2·s^-1,可逆性值为60.88%,光密度为0.41,着色效率达到124.49 cm^2·C^-1,着色和退色响应时间分别为13.53 s和12.65 s。     

CeO2修饰的透明TiO2纳米管电极的电致变色器件

采用电化学沉积法在阳极氧化制备的TiO2纳米管阵列管壁上沉积一层CeO2纳米颗粒,再将CeO2修饰的透明TiO2纳米管阵列薄膜对电极与聚三甲基噻吩变色电极组装成透过型电致变色器件.实验结果表明:CeO2修饰的TiO2纳米管阵列薄膜仍保持良好的光透过性,其电荷存储能力比纯TiO2纳米管电极提高了30%.经CeO2修饰的TiO2纳米管改善了器件的性能,与对电极为单一TiO2纳米管阵列的器件相比,其对比度仍保持在38%左右,其褪色时间由1.3 s缩短为0.8 s.电致变色器件快速响应得益于纳米管与纳米颗粒组成的复合结构的高比表面积和快速的电荷传输过程.     

Ni掺杂WOx薄膜的电致变色性能

采用磁控溅射工艺,以纯钨和纯镍为靶材在ITO玻璃上制备Ni掺杂WOx电致变色薄膜,研究了Ni掺杂对WOx薄膜电致变色性能和微观结构的影响机理.实验结果表明:均匀掺杂少量的Ni可改变WOx薄膜内部的缺陷分布及结构,提高薄膜的电致变色性能.XRD分析表明,掺杂后的WOx:Ni薄膜为非晶态;XPS分析表明:WOx:Ni薄膜中的Ni为Ni2 .     

塑料基MoO3电致变色薄膜性能

采用溶胶-凝胶工艺,在镀有ITO透明电极的聚对苯二甲酸乙二酯（PET）基体上制备了MoO3电致变色薄膜.用FT-IR和TG-DTA分析了薄膜的成分和热稳定性,用分光光度计、电化学工作站研究了其在1 mol/L的LiClO4碳酸丙烯酯（PC）液体电解质中的电致变色性能.结果表明：薄膜主要成分是含有水合过氧化氢的无定形MoO3;着、退色前后可见光透过率变化△T为40%,在550 nm时的致色效率为44.8 cm^2/C,经1000次循环,电色性能变化很小;着色速度和对比度随着色电压的增加而增加,Li^0的扩散和Li＋的迁移分别控制着着色速度和退色速度.     

Sm掺杂对TiO_2薄膜结构和电致变色性能的影响

以钛酸四丁酯和硝酸钐为主要原料,采用溶胶-凝胶法制备了Sm掺杂TiO2薄膜。Sm掺杂的摩尔分数分别为0,2%,5%,10%和20%。采用XRD和TG-DTA表征了薄膜的结构和热重特性,使用电化学工作站和紫外-可见分光光度计研究了薄膜的电致变色性能。结果表明,Sm掺杂使得TiO2薄膜具有更高的无定形程度。250℃热处理的Sm掺杂TiO2薄膜具有较高的电荷存储能力和循环可逆性。Sm掺杂量为5%时,薄膜的峰值电流最大,电荷存储能力最强,注入电荷密度为13.35 mC/cm2,循环可逆性K值为0.92。Sm掺杂TiO2薄膜在可见光范围内具有较好的光学透明度,透光率在70%~80%。适于用作电致变色器件的离子存储层。     

Optimizing indium tin oxide thin films with bipolar d.c.-pulsed magnetron sputtering for electrochromic device applications

In this paper, indium tin oxide (ITO) films were prepared by bipolar d.c.-pulsed magnetron sputtering in a mixture of argon and oxygen onto unheated glass substrates. A target of ITO with 10 weight percent (wt %) tin was used. The influences of ratios of t^– _on/t⁺ _on (negative pulse-on time/positive pulse-on time) on the optical, electrical, and structural properties of ITO films have been investigated. The correlations between the deposition parameters and the film properties were discussed. An optimal condition based on reactive bipolar d.c.-pulsed sputtering for obtaining high transmittance, low resistivity, and low surface roughness of ITO films with high deposition rate is suggested. Then, ITO films grown at room temperature by bipolar d.c.-pulsed sputtering were used to form electrochromic devices of WO₃. Better electrochromic performances were found in comparison to those measured with commercially available ITO films on glass substrates.     

Properties of indium tin oxide films deposited on unheated polymer substrates by ion beam assisted deposition

The optical, electrical and mechanical properties of indium tin oxide (ITO) films prepared on polyethylene terephthalate (PET) substrates by ion beam assisted deposition at room temperature were investigated. The properties of ITO films can be improved by introducing a buffer layer of silicon dioxide (SiO₂) between the ITO film and the PET substrate. ITO films deposited on SiO₂-coated PET have better crystallinity, lower electrical resistivity, and improved resistance stability under bending than those deposited on bare PET. The average transmittance and the resistivity of ITO films deposited on SiO₂-coated PET are 85% and 0.90 × 10^− 3 Ω cm, respectively, and when the films are bent, the resistance remains almost constant until a bending radius of 1 cm and it increases slowly under a given bending radius with an increase of the bending cycles. The improved resistance stability of ITO films deposited on SiO₂-coated PET is mainly attributed to the perfect adhesion of ITO films induced by the SiO₂ buffer layer.     

Physics of very thin ITO conducting films with high transparency prepared by DC magnetron sputtering

The preparation of very thin indium tin oxide (ITO) films with extremely high transparency and suitable resistivity, as well as resistivity stability for long term use, is described. In order to obtain these properties, amorphous suboxide films were first prepared and then annealed. Suboxide films with a thickness of 20 to 30 nm were prepared on PET film and glass substrates at a temperature of 60 °C using In₂O₃---SnO₂ targets with a SnO₂ content of 0 to 10 wt% by DC magnetron sputtering in a pure argon gas atmosphere. The films were annealed at a temperature of 150 °C for 1 to 100 h in air. The resistivity of films on PET films was, depending on the SnO₂ content, on the order of 10⁻³ ω cm. An average transmittance above 97% in the visible wavelength range and a resistivity of about 4 × 10⁻³ ω cm, as well as resistivity stability, were attained in ITO films with a SnO₂ content of about 1 wt% prepared on PET films by the low-temperature process. It is thought that these properties result from crystallization which occurred during the annealing, duration up to about 25 h.     

直流反应溅射TiO2薄膜的制备及其性能研究

采用直流反应磁控溅射的方法,溅射高纯钛靶在ITO石英衬底上制备了TiO2薄膜.用XRD、Raman光谱、AFM和紫外-可见光分光光度计分别测试了TiO2薄膜的结构、表面形貌和紫外-可见光透射谱,研究了工艺因素中溅射气压、氧氩比和退火温度对薄膜结构的影响.采用C(胶)/TiO2/ITO三层结构研究了锐钛矿TiO2薄膜的紫外光响应.实验结果表明较低的溅射气压、合适的氧氩比和较高的退火温度有利于锐钛矿TiO2薄膜的结晶.在2 V的偏压下,锐钛矿TiO2薄膜的紫外光响应上升迟豫时间约为3 s,稳定光电流可达到2.1 mA,对紫外光的灵敏性和稳定的光响应表明TiO2薄膜有可能成为一种新的紫外光探测器材料.     

Preparation and optimization of epitaxial growth of transparent ZnO nanotip thin films by hydrothermal method

Zinc oxide (ZnO) nanotip thin films were prepared on ZnO coated nanocrystalline ITO/glass substrates by hydrothermal method. In order to obtain the ZnO nanotip arrays with high aspect ratio, the experimental conditions were optimized. The scanning electron microscope images showed that the surface morphology of ZnO thin films could be easily manipulated by changing the seed layer thickness and growth time. The ZnO nanotip thin films were grown epitaxially on ZnO seed layer coated ITO/glass substrates. The surface morphology of ZnO thin films on ITO/glass substrate changed from nanorods with a flat-top end to nanotips as the growth time was increased from 3 to 15 h. The ZnO thin films prepared under these deposition conditions were highly oriented along (002) direction. The as-prepared sample (15 h) was annealed at different temperatures (30, 100, 150, and 270 degrees C). The surface morphologies of annealed ZnO thin films did not show any remarkable change and the best crystallinity was observed at 100 degrees C. The photoluminescence spectra showed that the near band edge emission shifted to shorter wavelength as the annealing temperature was increased from 30 to 270 degrees C, it was due to the intrinsic stress in the films. This was confirmed by X-ray diffraction analyses. NPB thin films were prepared on ITO/clay and ITO/glass substrates by thermal evaporation method. The electrical properties of Ag/NPB/ITO/Clay showed the Ohmic characteristics (J proportional V(1.0)). The J-V characteristic of Ag/NPB/PMMA/ZnO/ITO/Glass showed good rectification behaviour with a diode-ideality factor of 1.36.     

Fabrication and Properties of DC Magnetron Sputtered Indium Tin Oxide on Flexible Plastic Substrate

Indium tin oxide (ITO) thin films deposited on flexible polyethylene terephthalate (PET) substrates at low temperature by DC magnetron sputtering from an In-Sn (90-10 wt pct) alloy target were studied. The correla-tion between deposition conditions and ITO property was systematically investigated and characterized. These as-deposited ITO films were used as the anode contact for flexible organic light-emitting diodes (FOLEDs). The fabricated FOLEDs with a structure of PET/ITO/NPB (50 nm)/Alq (20 nm)/Mg:Ag (100 nm) showed a maximum luminance of 2125 cd/m2 at 13 V.     

Sol-Gel法制备氧化镍电致变色薄膜研究

以镍的醇盐为前驱体并加入催化剂和各种添加剂制成涂膜溶液,采用浸涂-提拉法(dip-coating)制备NiOx电致变色膜。讨论了先体胶液的性质、热处理制度及变色参数对薄膜表面微观结构和变色性能的影响。     

WO_3薄膜的微观结构与电致变色机制研究

采用直流反应磁控溅射方法在ITO导电玻璃上沉积了WO3薄膜,研究了靶基距对其微结构和电致变色性能的影响,利用XRD、SEM和XPS对薄膜的微结构和成分进行了表征。通过可见光透射谱对样品的电致变色性能进行了研究,并且讨论了WO3薄膜电致变色性能与其微结构、价态变化之间的关系。发现靶基距为7cm的情况下沉积得到的WO3薄膜呈非晶态,薄膜有更多的孔隙,有利于Li+的抽取,进而显示出较好的电致变色性能。反应溅射制备的WO3薄膜中W是W6+价态,颜色为透明状,当发生着色反应时,随着薄膜中Li+成分增加,薄膜颜色变为蓝色,薄膜中W原子为W6+和W5+的混合价态。认为其电致变色的行为是由于Li+和e-在薄膜中的注入和拉出引起的W6+和W5+发生转化所致。     

纳米TiO2薄膜的制备及其紫外光吸收性能的研究

采用sol-gel法制备TiO2薄膜。用XRD、AFM对其结构及表面形态进行了表征。用UV、SPS测试其光谱吸收、表面光伏特性。结果表明,在高软化温度ITO玻璃上得到比较好的锐钛矿型TiO2薄膜,且具有很强的紫外光吸收特性。随着烧结温度的升高,锐钛矿晶型更加趋于完整,使得紫外吸收曲线的带边蓝移。在紫外光照射下,所制得的薄膜有明显的光伏效应。较之粉体材料,吸收峰更趋向紫外区。为进一步研制新型紫外光传感器提供实验依据。     

采用真空电弧源镀制纳米TiO2薄膜研究

在真空条件下利用真空电弧源在不同基底材料上镀制了TiO2薄膜.对影响镀膜过程和膜层质量的氧气工作压强和偏压等因素进行了研究.X射线衍射结构分析结果显示TiO2薄膜主要以锐钛矿相为主及少量的金红石相.对TiO2薄膜的物理性质、化学性质进行了初步检测.