PSPICE和Matlab在IGBT动态仿真中应用

简要分析了目前常用的电力电子仿真软件PSPICE(Simulation Program with IC Emphasis)和Matlab的主要性能特点及在电力电子仿真中的适用程度。绝缘栅双极型晶体管IGBT(Insulated Gate Bipolar Transistor)开关回路在关断瞬间由于感性负载的作用常会伴随着擎住效应,对IGBT器件本身会造成严重的损伤,因此必须在IGBT器件两端并联缓冲电路．以实现对器件的过压保护。缓冲电路的拓扑结构有多种．过压保护的效果也不一样。应用以上两种仿真软件对IGBT开关回路进行动态仿真研究．比较并分析了两种缓冲电路在IGBT关断瞬间的不同过压保护效果。并且说明了PSPICE和Matlab仿真结果的差异及其原因。     

电压源换流器中IGBT串联动态均压新方法

由动态电压不均衡引起的器件击穿致使串联失败是串联的关键问题。传统无源缓冲电路是以牺牲绝缘栅双极晶体管(IGBT)快速性换取电压均衡,IGBT损耗大。建立功率端与驱动端反馈的新型剩余电流动作保护器(RCD)动态均压电路替代传统无源缓冲电路,对电路的均压效果和串联IGBT开关损耗进行仿真分析。试验验证了该动态均压电路在IGBT串联运行时能很好地抑制其驱动信号不同步造成的动态电压不均衡,确保了电压源换流器的安全运行。     

基于增强密勒效应的IGBT串联有源均压新方法

为解决由器件驱动信号不一致引起的多个IGBT串联电压不均衡问题,以实现串联IGBT在大功率高电压场合中的应用,笔者结合功率侧和栅极侧IGBT串联均压辅助电路的优点,提出一种基于增强密勒效应的IGBT串联有源均压辅助电路,并对其工作原理进行了论述。然后,建立IGBT串联仿真电路,对不带和带该均压辅助电路两种情况进行仿真。仿真结果表明,该均压辅助电路在IGBT串联运行时不仅能够很好地抑制IGBT驱动信号不一致造成的电压不均衡,而且能够有效防止过电压的发生,确保了IGBT串联的安全运行。     

配电网静止同步补偿器的驱动与吸收电路设计

配电静止同步补偿器(DSTATCOM)的可靠性与主电路功率开关器件的驱动和保护密切相关,DSTAT-COM运行中的诸多故障很大程度上与主电路功率开关器件有关。为了使功率开关器件稳定、可靠的工作,讨论并设计了DSTATCOM主电路功率开关器件IGBT的驱动电路和吸收保护电路。驱动电路采用集成智能驱动模块2SD315A,该模块集驱动、隔离、保护为一体且结构简单、功能强大、使用方便,非常适合于实际装置的开发。给出了利用2SD315A设计驱动电路的详细过程并为2SD315A设计了可靠的上电复位电路吸收保护电路采用RCD型电路,介绍了RCD型吸收保护电路的工作原理。根据RCD型吸收保护电路的工作原理和吸收保护电路安全可靠工作的目的建立了电路参数优化设计的数学模型。该模型中以功率开关器件承受的浪涌电压最小、放电时间常数最小和投资成本最小为目标函数。然后通过并行自校正多目标遗传算法优化吸收保护电路参数,给出了一个设计实例。实验装置的实际运行证明:所设计的IGBT驱动保护电路性能优良、可靠性高,对其它同类型的电力电子装置有较好的借鉴作用。     

一种新型吸收电路在光伏逆变器中的应用

在分析了光伏逆变器对吸收电路需求的基础上,结合传统IGBT逆变器吸收电路的特点和工作原理,提出了一种新型吸收电路.新型吸收电路通过在放电回路中使用电感元件,能够在不降低过电压吸收效果的前提下,极大缩短吸收电容放电时间.另外,新型吸收电路没有使用明显的耗能元件,所以功耗更低,效率更高,满足了光伏逆变器高频化、电压等级和功...     

开关式励磁调节器主回路研究

开关式励磁调节器主回路设计中需要考虑的两个主要问题是开关器件的尖峰电压和冲击电流。在分析了关断过程中产生尖峰电压的主要原因基础上,提出了开关式励磁调节器限制ＩＧＢＴ（绝缘栅双极型晶体管）关断时的尖峰过电压的有效方法,即直流发电机两端并联大容量电容和ＩＧＢＴ两端并联吸收网络,并根据开关状态下电路的近似分析证明了并联大电容以后的稳定性,另外分析了产生开通时冲击电流的原因,还给出了立回路缓冲网络参数确定     

压接式IGBT模块的动态特性测试平台设计及杂散参数提取

压接式IGBT模块具有散热性能好、杂散电感小、短路失效直通等特点,在柔性直流输电等大容量电力电子变换系统中具有极为重要的应用潜能。然而,目前学术界和工业界尚未很好地理解压接式IGBT模块的动态开关特性,严重制约了其推广应用。从压接式IGBT的封装结构和电气特性出发,基于双脉冲测试原理,设计并搭建压接式IGBT模块的动态开关特性测试平台。采用Ansoft Q3D软件对测试平台的杂散参数进行仿真,分析杂散参数的分布特征、影响与提取方法,并通过实验进行验证,揭示叠层母排技术与吸收电容对器件关断电压尖峰的抑制作用,低寄生电感总和验证了平台设计方案的合理性。     

A low‐loss snubber for reducing motor terminal surge voltage

The development of an advanced Insulated Gate Bipolar Transistor (IGBT) has enabled high‐frequency switching operation and has improved the performance of PWM inverters for motor drive. However, the IGBT's high rate of dv/dt has adverse effects on motor insulation stress. In many motor drive applications, the inverter and motor are separated, requiring long motor feeds. The long cable contributes high‐frequency ringing at the motor terminal and results in high surge voltage which stresses the motor insulation. The inverter output filter and RDC snubber are the conventional method for reducing the surge voltage. In this paper, we propose a new low‐loss snubber to reduce the motor terminal surge voltage. The snubber consists of the series connection of chraging/discharging capacitor and the voltage‐clamped capacitor. At IGBT turn‐off, the snubber starts to operate when the IGBT voltage reaches the voltage‐clamped level. Since dv/dt is decreased by snubber operating, the peak level of the surge voltage can be reduced. Also the snubber operates at the IGBT voltage above the voltage‐clamped level, and the snubber loss is largely reduced compared with the RDC snubber. The proposed snubber enables reduction of the motor terminal surge voltage with low loss. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 150(4): 64–72, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10378     

A novel prototype of auxiliary edge resonant bridge leg link snubber‐assisted soft‐switching sine‐wave PWM inverter

This paper proposes a new circuit topology of the three‐phase soft‐switching PWM inverter and PFC converter using IGBT power modules, which has the improved active auxiliary switch and edge resonant bridge leg‐commutation‐link soft‐switching snubber circuit with pulse current regenerative feedback loop as compared with the typical auxiliary resonant pole snubber discussed previously. This three‐phase soft‐switching PWM double converter is more suitable and acceptable for a large‐capacity uninterruptible power supply, PFC converter, utility‐interactive bidirectional converter, and so forth. In this paper, the soft‐switching operation and optimum circuit design of the novel type active auxiliary edge resonant bridge leg commutation link snubber treated here are described for high‐power applications. Both the main active power switches and the auxiliary active power switches achieve soft switching under the principles of ZVS or ZCS in this three‐phase inverter switching. This three‐phase soft‐switching commutation scheme can effectively minimize the switching surge‐related electromagnetic noise and the switching power losses of the power semiconductor devices; IGBTs and modules used here. This three‐phase inverter and rectifier coupled double converter system does not need any sensing circuit and its peripheral logic control circuits to detect the voltage or the current and does not require any unwanted chemical electrolytic capacitor to make the neutral point of the DC power supply voltage source. The performances of this power conditioner are proved on the basis of the experimental and simulation results. Because the power semiconductor switches (IGBT module packages) have a trade‐off relation in the switching fall time and tail current interval characteristics as well as the conductive saturation voltage characteristics, this three‐phase soft‐switching PWM double converter can improve actual efficiency in the output power ranges with a trench gate controlled MOS power semiconductor device which is much improved regarding low saturation voltage. The effectiveness of this is verified from a practical point of view. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 155(4): 64–76, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20207     

基于开关瞬态过程分析的大容量变换器杂散参数抽取方法

由于线路杂散电感存储能量的释放,绝缘门极双极性晶体管（insulatedgatebipolartransistor,IGBT）在开通和关断的瞬态过程中,其两端将产生电压尖峰。为了对该电压尖峰进行定量研究,需要对IGBT开关过程进行分析,抽取线路的杂散电感参数。传统抽取方法通常利用IGBT关断电压的最大幅值以及近似的电流斜率作为计算参数,其计算结果并不精确。为得到更精确的结果,提出一种新的参数抽取方法,通过将IGBT开通、关断的非线性过程分解为多个线性阶段,并充分考虑反并联二极管前向恢复和反向恢复的影响,在此基础上得到电压过冲△Uot。和相对应的di／dt,进而得到准确的杂散参数抽取过程。最后,将该分析方法在一台75kVA的单相逆变器进行实验验证,利用不同工况下的开通和关断过程进行线路杂散电感抽取,均得到一致的结果,从而证明了本方法的有效性与正确性。     

IGBT串联均压方法综述

绝缘栅双极性晶体管IGBT(insulated gate bipolar transistor)在高电压场合应用时需串联使用满足电压需求。由于器件内部的性能差异和外围电路参数不一致等,引起IGBT模块之间电压不均衡问题,威胁其运行安全。综述了国内外IGBT串联均压方法的发展及其研究现状。根据均压方法机理的不同,将IGBT串联均压方法分为被动均压方法和主动均压方法两种,进一步将主动均压方法归纳为无源控制方法和有源控制方法两类。根据各类方法的基本电路拓扑分析了均压原理,梳理了不同方法在电路拓扑、参数选择和控制策略等方面的优化和最新进展。通过均压效果、附加损耗和可靠性等多方面对不同均压方法进行对比,被动均压方法拓扑简单不需外加控制电路更适合在低频应用场合,在高频应用场合中,准有源栅极控制法以单驱动与无源器件相结合的方式,具有良好的发展前景。最后对IGBT串联均压方法进行了展望。     

一种新颖的耦合电感MVS无源无损缓冲电路

研究了一种适用于大功率Buck变换器的带耦合电感的最小电压应力(Minimun Voltage Stress,简称MVS)无源无损ZCS开通缓冲电路,它利用耦合电感的漏感与谐振电容在功率管开关过程中进行谐振,实现软开关。分析了变换器的工作模态,给出了软开关环节中耦合电感和谐振电容的参数设计方法,并搭建了150 W实验样机。实验结果表明,该结构实现了功率开关管ZCS开通和近似ZVS关断,抑制了功率二极管的反向恢复过程,减小了开关损耗,提高了变换器的效率。     

对IGBT逆变器吸收电路的改进与仿真

本文在分析了传统IGBT逆变器吸收电路特点和工作原理的基础之上,结合IGBT在高频应用场合的开关特性,对传统IGBT逆变器吸收电路进行了改进.经过改进的IGBT逆变器吸收电路能够通过改变放电回路的放电电容,缩短吸收电容放电时间,在不降低吸收过电压效果的基础上,提高IGBT的工作频率,满足了IGBT逆变器在高频应用下的要求.最后,通过理论分析和电路仿真,验证了改进型吸收电路的有效性和适用性.     

串联IGBT的一种复合均压方法

针对IGBT串联应用时的集射极电压均衡问题,提出并研究了一种门极平衡核与无源RCD缓冲电路相结合的复合均压方案。分析了门极平衡核的均压原理,借助门极驱动等效电路模型,导出了门极平衡核的参数设计方法。在IGBT门极与发射极之间引入瞬态电压抑制器,有效减缓了平衡核变压器的漏感与IGBT输入电容引发的门极信号振荡幅度,同时有效保护了IGBT门极过电压。建立了复合均压方案的仿真与实验系统,实验结果表明,复合均压方案对由于IGBT特性参数差异和门极驱动信号不同步而引起的IGBT集射极电压不均问题具有显著的平衡效果。     

Series connection of IGBT's with active voltage balancing

This paper describes an active gate drive circuit for series-connected insulated gate bipolar transistors (IGBTs) with voltage balancing in high-voltage applications. The gate drive circuit not only amplifies the gate signal, but also actively limits the overvoltage during switching transients, while minimizing the switching transients and losses. In order to achieve the control objective, an analog closed-loop control scheme is adopted. The closed-loop control injects current to an IGBT gate as required to limit the IGBT collector-emitter voltage to a predefined level. The performance of the gate drive circuit is examined experimentally by the series connection of three IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by an active control with wide variations in loads and imbalance conditions     

基于LC谐振的叠层母排杂散电感测量的新方法

现有的叠层母排杂散电感测量方法主要是基于电压过冲和关断电流变化率的原理,在精度上存在不足。为此提出了一种基于LC谐振的精确测量方法。测量时需要在IGBT桥臂两端并联吸收电容,并且在桥臂的上管并联一个线性电感器。控制桥臂下管的开关动作,就可以使叠层母排杂散电感和吸收电容构成二阶LC谐振回路。由于谐振周期和吸收电容的电容量都可以精确测量获得,因此可以准确计算得到杂散电感值。用该方法测量H桥逆变器叠层母排的杂散电感,测量结果验证了所提出方法的准确性。     

Performance analysis and circuit design of high-frequency resonant inverter using a single reverse-conducting device

This paper is concerned mainly with a performance analysis and a design method of a newly developed zero-current switching quasi-resonant high-frequency inverter (ZCS-QRI) using a single reverse-blocking power device (high-frequency GATT). As a matter of fact, GATT is replaced by the latest MOS-gate power semiconductor devices, MOSFET, IGBT, MCT and Bi-MOS · GTO thyristor. The frequency-modulated single-ended inverter circuit, which incorporates an auxiliary diode and large reactor cascade branch in parallel with a resonant capacitor connected into the transformer-link series-resonant tuned tank load circuit can stably and efficiently operate in the frequency range from 20 kHz up to 50 kHz or so. It is proved that the ZCS-QRI is more suitable for several kilowatt induction-heating and melting power supplies and high-intensity ultrasonic generator, and switched-mode dc-dc converters. This simple high-frequency ZCS-QRI for induction-heating load model is analyzed introducing normalized resonant and load circuit parameters and control variable on the basis of computer-aided simulation. The load and frequency regulation characteristics of ZCS-QRI and ZCS operating range are illustrated with a normalized expression in addition to voltage and current peak values and stresses of the power semiconductor device. The practical computer-aided design procedure using the inverter characteristics in steady-state expressed in the normalized technique is demonstrated and discussed including a design example. The simulation results of ZCS-QRI are illustrated and compared with the experimental results in trial-produced breadboard.     

适用于间接矩阵变换器的IGBT驱动保护电路设计

针对间接矩阵变换器中开关器件多,电路拓扑复杂的特点,设计了一种适用于间接矩阵变换器的绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)的驱动保护电路.该电路基于M57962厚膜电路,并设有隔离电源和阈值电压调节电路,可以有效实现矩阵式变换器各个开关器件的隔离供电,以及对各开...     

大功率三电平中点箝位变流器损耗特性分析

随着大功率变流器容量的提升,功率器件的损耗也逐步增加,从而导致系统的散热及可靠性问题变得更加突出。本文分析了基于IGCT器件的三电平中点箝位变流器各部分损耗的理论计算方法。考虑高压大电流条件下器件电压及电流谐波含量对损耗计算的影响,本文通过电压及电流瞬时值计算功率器件通态损耗、开关损耗,以及缓冲电路损耗,实现变流器系统损耗的准确计算,为大功率变流器不同拓扑结构和调制策略的效率优化分析打下基础,也为系统散热设计提供参考基准。基于负载功率自循环老化原理,本文通过仿真和实验验证损耗计算模型及仿真平台的正确性和有效性,在工程实践上具有一定的实用性。     

碳化硅器件的短路保护：设计准则和电路

为了保障碳化硅(silicon carbide,Si C)在发生短路故障时可安全可靠的关断,需在掌握其短路特性基本规律的前提下,针对Si C短路耐受时间较短、短路下器件漏源极电压拐点不明显等特征,展开去饱和保护电路(desaturation fault protection,DESAT)电路中关键参数的研究,并制定其工程化设计的参考标准。在此基础上,文中进一步提出基于氮化镓(galliumnitride,GaN)的高速、低传输延时的DESAT短路保护电路,短路保护电路的驱动动作延时仅为常规基于硅器件DESAT电路的23.2%。所提出的氮化镓DESAT电路为SiC MOSFET短路保护电路的更优越的实现方案。