Si_3N_4-TiZrN_2-TiN复合导电陶瓷

以制备可用电火花加工的氮化硅基陶瓷材料为目的,用Zr N-Ti N作为导电相,以Y_2O_3、La_2O_3、Al N作为烧结助剂,在1750℃无压烧结Si_3N_4-Ti Zr N_2-Ti N复合导电陶瓷。测试了试样的烧结特性、机械性能及导电性能,用XRD和SEM分析表征了试样的物相和显微结构。其结果为:相对密度接近98%;试样的机械性能良好,抗弯强度可达到960 MPa,显微硬度为14.7 GPa,断裂韧性为7.6 MPa·m~(1/2);试样的电阻率由单相氮化硅陶瓷的10~(13)?·cm降低到复合导电陶瓷的10~(-2)?·cm数量级,可用电火花进行加工。物相分析表明,试样中生成了Ti Zr N_2新物相,形成了Si_3N_4-Ti Zr N_2-Ti N复合导电陶瓷。显微分析表明,试样中的三种晶粒均在2μm以下,具有相互结合紧密且分布较均匀的显微结构。     

ZrN–Si_3N_4–Y_2O_3复合材料的相组成（英文）

采用不同组分的Zr N、Si_3N_4和Y_2O_3混合粉末,在1 750℃高温固相反应合成Zr N–Si_3N_4–Y_2O_3复合材料,借助于X射线衍射仪表征6种按不同比例混合样品的物相组成。结果表明:在Zr N–Si_3N_4–Y_2O_3三元系统中,Zr N分别与Si_3N_4、Y_2O_3和Y2Si3O3N4(M相,黄长石结构)共存;M相为Si_3N_4和Y_2O_3在摩尔比为1:1时的产物,Zr N–Si_3N_4–Y_2O_3三元系统扩展为Zr N–Si_3N_4–Y_2O_3–Si O2四元系统,在该四元系统中,Zr N分别与M相、Y4Si2N2O7(J相,单斜Y4Al2O9结构)及Y5(Si O4)3N(H相,磷灰石结构)3种含钇硅酸盐及Si_3N_4、Y_2O_3共存。其中,J相和H相分别是Si2N2O(Si_3N_4和Si O2在摩尔比为1:1时的产物)和Y_2O_3在摩尔比分别为2:1和9:5时的产物。用Zr N–Si_3N_4–Y_2O_3体系相图可解析制备Zr N陶瓷和Zr N/Si_3N_4复合陶瓷的相组成。     

纳米Si3N4—SiC复相陶瓷显微结构

本文系统地研究了纳米Si_3N_4-SiC复相陶瓷显微结构,观测了纳米Si_3N_4-SiC复相陶瓷中Si_3N_4、SiC粒子晶粒尺寸,研究了复合在Si_3N_4晶粒内和晶界上的SiC粒子分布情况及Si_3N_4与SiC、Si_3N_4间的相界面。     

α—赛隆基陶瓷

合成法对以通式为M_x(Si, Al)_(12)(O,N)_(16)的α-赛隆为基的陶瓷的研究,是研究解决创造高温陶瓷结构材料问题的未来方向。这种材料与其它类型赛隆相比,具有更高的强度和抗裂性能。研究不同类型的Si_3N_4粉末对这些材料的显微结构、相组成及性能的影响是一项迫切的任务。 安排了合成和研究2种陶瓷的任务:2种陶瓷由     

SiC_(nf)–C_f/Si_3N_4复合材料的微观结构与吸波性能

以Si_3N_4陶瓷为基体,分别添加碳纤维(C_f)、SiC纳米纤维(SiC_(nf))和SiC纳米纤维包覆碳纤维(SiC_(nf)-C_f)作为吸波剂,采用凝胶注模和无压烧结工艺制备Si_3N_4、C_f/Si_3N_4、SiC_(nf)/Si_3N_4和SiC_(nf)-C_f/Si_3N_44种Si_3N_4基复合材料,并对其微观结构、室温和800℃的介电性能和吸波性能进行了对比研究。结果表明:SiC_(nf)有效改善了C_f与Si_3N_4的高温化学相容性,使得C_f在基体中保存完好并相互连接成导电网络,导致SiC_(nf)-C_f/Si_3N_4复合材料中电子传导增强和存在多重弛豫现象,在室温和800℃高温下均展现出最高的介电损耗值和最优的吸波性能。室温时,SiC_(nf)-C_f/Si_3N_4复合材料的最小反射损耗值为-15.2 dB(厚度为2.57mm),有效吸收带宽(反射率-10dB)为1.9 GHz(厚度为2.3mm);800℃时,最小反射损耗值达到-20.4 dB(厚度为2.0mm),有效吸收带宽增大到3 GHz(厚度为2.25mm)。SiC_(nf)-C_f/Si_3N_4复合材料的主要吸波机制为多重反射和散射、电传导损耗、电子极化和多重弛豫;800℃时,电子热运动加剧使电子极化和传导增强,吸波性能进一步提高。进一步优化SiC_(nf)-C_f/Si_3N_4复合材料的吸波性能,其有望作为优异的吸波材料应用于高温吸波领域。     

Si3N4／纳米SiC复相陶瓷显微结构的研究

本研究通过采用纳米SiC粉体及有机前驱体两种途径,制备了Si_3N_4/纳米SiC粒子(Si_3N_4/纳米SiCp)复相陶瓷,研究了这些材料的显微结构特点,讨论了材料强化的机制与显微结构的关系。     

Si_(3)N_(4)-Mo梯度连接及其反应结合机理EI北大核心CSCD

氮化硅陶瓷与金属的有效连接,对于充分利用二者优异性能、满足材料或构件在复杂环境下服役要求至关重要。利用粉末冶金、梯度复合技术实现了大物性差异氮化硅陶瓷(Si_(3)N_(4))和金属钼(Mo)的梯度连接,研究和探明了不同烧结温度以及不同Si_(3)N_(4)添加量下各梯度层内Si_(3)N_(4)和Mo的反应机理。基于反应机理,结合浓度分布指数p对Si_(3)N_(4)/Mo_(x)Si_(y)/Mo梯度材料的过渡层结构进行优化,实现了Si_(3)N_(4)和Mo的梯度连接及力学性能的提升。结果表明:Si_(3)N_(4)和Mo主要通过Mo、Si之间的扩散反应形成钼硅化合物,反应过程为(Mo+Si)→(Mo_(3)Si/MoSi_(2)+Si)→(Mo_(5)Si_(3));当浓度分布指数p=1.5时,Si_(3)N_(4)/Mo_(x)Si_(y)/Mo梯度材料的弯曲强度达到最大值371.42 MPa,剪切强度达到最大值30.58 MPa,过渡层内各元素呈准连续梯度分布。     

Gd2O3对O'-Sialon/Si3N4复相陶瓷结构与性能的影响

以α-Si_3N_4粉和黑刚玉为原料、Gd_2O_3为烧结助剂,采用无压烧结工艺制备了O’-Sialon/Si_3N_4复相陶瓷材料,研究了Gd_2O_3添加量和烧结温度对样品性能、相组成和显微结构的影响,探讨了Gd_2O_3对复相陶瓷的作用机理。结果表明:复相陶瓷主晶相为α-Si_3N_4、β-Si_3N_4和O’-Sialon,添加Gd_2O_3一方面可在高温烧结过程中形成液相,促进α-Si_3N_4的"溶解–析出"过程,有利于α-Si_3N_4向β-Si_3N_4的晶型转变以及β-Si_3N_4晶粒的生长;另一方面可促进α-Si_3N_4与Al_2O_3和Si O_2的固溶反应,生成O’-Sialon相,使样品中O’-Sialon含量增加。当Gd_2O_3添加量为6%(质量分数)时,经1 600℃烧结的样品SN-G6性能最佳:气孔率为23.29%;体积密度为2.31 g·cm~(–3);抗折强度达到105.57 MPa。     

Si_3N_4/BAS复相陶瓷材料制备及其性能EI北大核心CSCD

采用新型冷冻胶凝陶瓷成型技术制备高性能Si_3N_4/BAS复相陶瓷透波材料,对Si_3N_4/BAS复相陶瓷材料烧结体成分、力学性能、微观形貌、电性能及抗热震性等进行研究。结果表明:坯体成型收缩率小于1%,在温度升到1 300℃高温时,Si_3N_4/BAS复相陶瓷烧结体弯曲强度280 MPa,弹性模量为90 GPa,介电常数变化率仅为6%。该复相陶瓷材料具有良好的抗热震性能及可加工性,BAS陶瓷玻璃相高温高黏度特性对Si_3N_4/BAS复相陶瓷材料抗热震是一种热应力缓释方式。     

环氧树脂/纳米Si_3N_4复合材料的制备与性能研究

以纳米 Si_3N_4为填料制备了环氧树脂/纳米 Si_3N_4复合材料。通过透射电镜观察到,纳米粒子在有机基体中分散均匀。研究了纳米 Si_3N_4对复合材料性能的影响,结果表明,添加纳米 Si_3N_4使复合材料的力学性能增加,当改性环氧树脂/纳米 Si_3N_4为100/3(质量比,下同)时,复合材料的拉伸强度、弯曲强度、冲击强度提高幅度最大,分别提高了145%、241%、255%。此时,复合材料的击穿场强提高的幅度也达到最大,在直流电压和交流电压下,分别提高了249%、146%;但添加纳米 Si_3N_4使复合材料的介电常数和介质损耗值减小;热重分析表明,环氧树脂/纳米Si_3N_4复合材料耐热性能有明显提高。并用"核-壳过渡层"结构模型初步探讨了各项性能改善的原因。     

Dielectric and mechanical properties of porous Si3N4 ceramics prepared via low temperature sintering

Borophosphosilicate bonded porous silicon nitride (Si₃N₄) ceramics were fabricated in air using a conventional ceramic process. The porous Si₃N₄ ceramics sintered at 1000–1200 °C shows a relatively high flexural strength and good dielectric properties. The influence of the sintering temperature and contents of additives on the flexural strength and dielectric properties of porous Si₃N₄ ceramics were investigated. Porous Si₃N₄ ceramics with a porosity of 30–55%, flexural strength of 40–130 MPa, as well as low dielectric constant of 3.5–4.6 were obtained.     

Neural network modeling and analysis of gel casting preparation of porous Si3N4 ceramics

Based on orthogonal experimental results of porous Si₃N₄ ceramics by gel casting preparation, a three-layer back propagation artificial neural network (BP ANN) was developed for predicting the performances of porous Si₃N₄ ceramics. The results indicated that BP ANN was a very useful and accurate tool for the prediction and optimization of porous Si₃N₄ ceramics performances. By using the developed ANN model, the influences of the compositions on performances of porous Si₃N₄ ceramics were investigated, and some important conclusions were drawn as follows: for the flexural strength of Si₃N₄ ceramics, solid loading has an optimum value where can achieve a maximum value, and the optimum solid loading decreases with the increase of monomer content; the porosity of sintering body monotonically decreases with the increase of solid loading, and it increases with monomer content; the porosity of sintering body monotonically increases with the increase of the ratio of crosslinking agent to monomer.     

TiO2 photocatalyst loaded on hydrophobic Si3N4 support for efficient degradation of organics diluted in water

TiO₂ photocatalyst loaded on Si₃N₄ (TiO₂/Si₃N₄) was prepared by a conventional impregnation method and its photocatalytic performance for the degradation of organics (2-propanol) diluted in water was compared with that of TiO₂ photocatalysts (TiO₂/SiO₂, TiO₂/Al₂O₃, and TiO₂/SiC) loaded on various types of supports (SiO₂, Al₂O₃, and SiC). The formation of the well-crystallized anatase phase of TiO₂ was observed on the calcined TiO₂/Si₃N₄ photocatalyst, while a small anatase phase of TiO₂ was observed on the TiO₂/SiC photocatalyst and amorphous TiO₂ species was the main component on the TiO₂/SiO₂ and TiO₂/Al₂O₃ photocatalysts. The measurements of the water adsorption ability of photocatalysts indicated that the TiO₂/Si₃N₄ photocatalyst exhibited more hydrophobic surface properties in comparison to other support photocatalysts. Under UV-light irradiation, the TiO₂/Si₃N₄ photocatalyst decomposed 2-propanol diluted in water into acetone, CO₂, and H₂O, and finally, acetone was also decomposed into CO₂ and H₂O. The TiO₂/Si₃N₄ photocatalyst showed higher photocatalytic activity than TiO₂ photocatalyst loaded on other supports. The well-crystallized TiO₂ phase deposited on Si₃N₄ and the hydrophobic surface of Si₃N₄ support are important factors for the enhancement of photocatalytic activity for the degradation of organic compounds in liquid-phase reactions.     

Effect of carboxymethyl cellulose addition on the properties of Si3N4 ceramic foams

The effect of carboxymethyl cellulose (CMC) addition on the preparation of Si₃N₄ ceramic foam by the direct foaming method was investigated. The addition of CMC in the foam slurry can reduce the surface tension, increase the viscoelasticity of foams, and improve their stability and fluidity. The foam ceramics show low shrinkage during drying owing to the CMC and the gelation of acrylamide monomers. The surface structure of dried foam is uniform, and there are no macropores and cracks on the surface. The sintered Si₃N₄ foam ceramics have very uniform pore distribution with average pore size of about 16 μm; the flexure strength is as high as 3.8–77.2 MPa, and the porosity is about 60.6–82.1%.     

Luminescence properties of Eu activated Ba2Si5N8 red phosphors with various Eu contents

This study was carried out to characterize the crystal structure and luminescence properties of Eu²⁺ doped red-emitting Ba₂Si₅N₈ phosphor. In this research, Ba₂Si₅N₈ phosphors with various Eu compositions were prepared by normal pressure sintering (NPS). Ba₃N₂, Si₃N₄ and Eu₂O₃ were sintered at a high temperature in a mixture of N₂ and H₂. The crystal structure was analyzed by X-ray diffraction(XRD), and the photoluminescence(PL) properties of the Eu²⁺ - activated Ba₂Si₅N₈ phosphors were evaluated as a function of the Eu²⁺ activator concentration. The red-emitting Ba₂Si₅N₈ phosphors showed a broad excitation band range as well as high quantum output.     

Paper derived SiC–Si3N4 ceramics for high temperature applications

Biomorphic Si₃N₄–SiC ceramics have been produced by chemical vapour infiltration and reaction technique (CVI-R) using paper preforms as template. The paper consisting mainly of cellulose fibres was first carbonized by pyrolysis in inert atmosphere to obtain carbon bio-template, which was infiltrated with methyltrichlorosilane (MTS) in excess of hydrogen depositing a silicon rich silicon carbide (Si/SiC) layer onto the carbon fibres. Finally, after thermal treatment of this Si/SiC precursor ceramic in nitrogen-containing atmosphere (N₂ or N₂/H₂), in the temperature range of 1300–1450 °C SiC–Si₃N₄ ceramics were obtained by reaction bonding silicon nitride (RBSN) process. They were mainly composed of SiC containing α-Si₃N₄ and/or β-Si₃N₄ phases depending on the nitridation conditions. The SiC–Si₃N₄ ceramics have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and Raman spectroscopy. Thermal gravimetric analysis (TGA) was applied for the determination of the residual carbon as well as for the evaluation of the oxidation behaviour of the ceramics under cyclic conditions. The bending strength of the biomorphic ceramics was related to their different microstructures depending on the nitridation conditions.     

Improvement of the high temperature properties of the LiYO2–Si3N4 system by removing residual Li

Effects of the vaporization of residual Li on the microstructure, oxidation behavior and high temperature properties of a low-temperature pressureless sintered Si₃N₄ using LiYO₂ additive were investigated. The oxidation and creep resistance of the Si₃N₄ was improved after an annealing at 1650 °C because residual Li, which deteriorated the high temperature properties of the Si₃N₄, could be mostly removed. The high temperature deformation of the Si₃N₄ was strongly suppressed after the annealing treatment. The annealed specimens retained 64% of the room temperature strength at 1300 °C in air. The present investigation reports a method to improve the high temperature properties of Si₃N₄.     

Preparation of Si3N4 porous ceramics via foam-gelcasting and microwave-nitridation method

Si₃N₄ porous ceramics with improved mechanical strength were fabricated for the first time by a combined foam-gelcasting and microwave-nitridation method at 1273–1373?K. The Si₃N₄ porous samples prepared at 1373?K/20?min with the porosity of 68.9% had respectively flexural and compressive strength as high as 8.1 and 20.8?MPa, which values were comparable or even superior to those of Si₃N₄ porous ceramics prepared previously by the conventional heating technique at a much higher temperature of 1773–1973?K, indicating that present preparation strategy is feasible to prepare high quality Si₃N₄ porous ceramic at a much milder condition. Moreover, the thermal conductivity of as-prepared Si₃N₄ porous ceramics at 1073?K was as low as 1.697?W/(m?K), suggesting it could be a potentially good heat insulating material for aluminum electrolyte cells.     

Microwave dielectric properties of SnO2-doped CaSiO3 ceramics

SnO₂-doped CaSiO₃ ceramics were successfully synthesized by a solid-state method. Effects of different SnO₂ additions on the sintering behavior, microstructure and dielectric properties of Ca(Sn_1−xSi_x)O₃ (x=0.5–1.0) ceramics have been investigated. SnO₂ improved the densification process and expanded the sintering temperature range effectively. Moreover, Sn⁴⁺ substituting for Si⁴⁺ sites leads to the emergence of Ca₃SnSi₂O₉ phase, which has a positive effect on the dielectric properties of CaO–SiO₂–SnO₂ materials, especially the Qf value. The Ca(Sn_0.1Si_0.9)O₃ ceramics sintered at 1375 °C possessed good microwave dielectric properties: ε_r =7.92, Qf =58,000 GHz and τ_f=−42 ppm/°C. The Ca(Sn_0.4Si_0.6)O₃ ceramics sintered at 1450 °C also exhibited good microwave dielectric properties of ε_r=9.27, Qf=63,000 GHz, and τ_f=−52 ppm/°C. Thus, they are promising candidate materials for millimeter-wave devices.     

Thermal shock resistance of in situ formed Si2N2O–Si3N4 composites by gelcasting

Thermal shock resistance of Si₂N₂O–Si₃N₄ composites was evaluated by water quenching and subsequent three-point bending tests of strength diminution. Si₂N₂O–Si₃N₄ composites which was prepared with in situ liquid pressureless sintering process using Yb₂O₃ and Al₂O₃ powders as sintering additives by gelcasting showed no macroscopic cracks and the critical temperature difference (ΔT_c) could be up to 1400 °C. A mass of pores existed in the sintered body and the irregular shaped fibers extended from the pores increased the thermal shock property.