彩色金合金研究的现状

对彩色金合金的种类，特点，性能进行了评述，讨论了彩色金合金的彩色途径以及彩色金合金的新发展。     

金硫自组装及其在金矿成因研究中的应用

介绍了金硫自组装的各种形式及该技术的发展历程,评述了各类金硫自组装的形成特点,探讨了自组装机理,提出了金成矿地球化学的新机制,指出了这一技术在研究金成矿过程中的意义及应用前景。     

粗金除铅提纯的工艺研究

研究了粗金中除去铅及提纯的新工艺。利用HCI－H2O2（体积比5：1）混合试剂溶样，加硫酸钾使铅转化为PbSO4而除去，用无水亚硫酸钠将金还原，再用稀硝酸二次除铅。实验结果表明：较适宜的溶样条件为温度50℃，溶样时间为3h，混合剂与金的液固比为6：1（体积比）；提纯后的金纯度达到99．9％以上，残留铅低于0．002％。该方法是一种快速、低污染的提纯方法。     

重选工艺在有色金属伴生金回收中的应用

介绍了重选工艺在有色金属伴生金回收中的应用情况及我国有色金属伴生金的回收概况，着重讨论了重选工艺选别某铜矿浮选尾矿中伴生金的研究结果；分析了影响重选工艺选别铜尾砂中伴生金的主要因素。     

常见载金矿物对金的吸附差异性实验研究

用模拟实验与理论综合分析相结合的方法，研究了黄铁矿等常见载金矿物对络合溶液体系中金的吸附差异。结果表明：在Ａｕ（Ⅲ）－ＨＣｌ－Ｈ２Ｏ体系中，同一粒级的不同种载金矿物对金的吸附性显示出较大差异，其中黄铁矿的吸附性最强，大大超过其它载金矿物，金的吸附时高达８９％；其次是方铅矿、石英和毒砂；吸附性相对最弱是黄铜矿，吸附量仅为９％。这与天然金矿床中上述各矿物的含金性情况基本一致，从吸附性角度为解释矿物的含     

提高因民公司铜精矿中金品位试验研究

不改变因民公司选厂现有浮选工艺流程,并在保持现有铜选矿技术指标(铜回收率84.50%,铜精矿品位24%)不变的基础上,通过试验研究,将铜精矿中的金品位由现在的0.80 g/t提高到1.00 g/t(计价品位)以上,提高企业收入,同时提高资源综合利用率,实现矿山的持续健康发展。     

载金炭中金的分析方法研究

采用高温灰化、酸溶分解、火焰原子吸收法对载金炭中金的分析方法进行了实验研究。提出了用不定量称样、高温灰化、盐酸和过氧化氢分解、火焰原子吸收浓度直读、加权平均法来消除分析测试中活性炭吸附金的不均匀性所引起的偏差．实验结果表明：该方法不仅消除了分析中活性炭吸附金的不均匀性所引起的偏差，且操作简便、准确可靠，其测定下限为0．5μg／g．     

Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> thin films prepared by sulfurizing different multilayer metal precursors

Cu₂ZnSnS₄ (CZTS) thin films were successfully fabricated on glass substrates by sulfurizing Cu-Sn-Zn multilayer precursors, which were deposited by ion beam sputtering and RF magnetron sputtering, respectively. The structural, electrical and optical properties of the prepared films under various processing conditions were investigated in detail. Results showed that the as-deposited CZTS thin films with the precursors by both ion beam sputtering and RF magnetron sputtering have a composition near stoichiometric. The crystallization of the samples, however, has a strong dependence on the atomic percent of constituents of the prepared CZTS films. A single phase stannite-type structure CZTS with a large absorption coefficient of 10₄/cm in the visible range could be obtained after sulfurization at 520°C for 2 h. The samples relative to the RF magnetron sputtering showed a low resistivity of 0.073 Ωcm and band gap energy of about 1.53 eV. The samples relative to the ion beam sputtering exhibited a resistivity of 0.36 Ωcm and the band gap energy is about 1.51 eV. Supported by the National Natural Science Foundation of China (Grant No. 10574106), the Planned Science and Technology Project of Guangdong Province (Grant No.2003C05005) and the Natural Science Fund of Zhanjiang Normal University (Grant No.200801)     

Preparation and Properties of IrO2 Thin Films Grown by Pulsed Laser Deposition Technique

Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.     

Fiber Optic Humidity Sensor Based on Self-Assembled Polyelectrolyte

Polyelectrolyte multilayers were self-assembled onto planar glasssubstrates and multimode optic fibers. The multilayer thin films deposited on glass substrates were characterized by using UV-vis spectroscopy and X-ray photoelectron spectroscopy. The multilayer thin films containing hydrophilic side-groups possessed are affinity for water molecules. The adsorption and desorption of free water vapor gave rise to the changes in the refractive index and in the reflectance of the thin films. A multilayer thin film based fiber optic humidity sensor with an LED light source of 0.85 μm was designed. Under certain conditions, the reflected light intensity of the thin film sensor was a function of the humidity of air. About 30 bilayers was optimal for the multilayer thin film sensor working at wavelength of 0.85 μm. This sensor can work over almost the whole relative humidity range with very good sensitivity.     

Preparation,microstructure and magnetic properties of NiZn ferrite thin films by spin spray plating

NiZn ferrite thin fihns were performed on glass substrates of 85 ℃ by spin spray plating method. X-ray diffraction patterns of the films show that the samples have a cubic spinel structure with no extra lines corresponding to any other phases between 75 ℃ and 85 ℃. As the pH value of oxidizing solution increases to 8.3, the saturation magnetization increases to 3.13 × 10^5 A/m and resistivity to 127 m Ω ·cm. Film deposited at pH 7.8 has a smooth surface and definite columnar structure. The large wavy flakes were observed at pH 8.3. The high real part of complex permeability μ′ up to 36.1 and the imaginary part μ″ up to 53.2 were observed at 0.5 GHz by short microstrip line perturbation method. The μ″ of thin film has values higher than 20 at the frequencies between 0.5 GHz and 2 GHz, the film is a promising anti-noise material for high frequency applications,     

Effect of the sputtering parameters on the structure and properties of Cu<Subscript>3</Subscript>N thin film materials

Copper nitride (Cu₃N) thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering. The effects of sputtering parameters on the structure and properties of the films were studied. The experimental results show that with increasing of RF power and nitrogen partial pressure, the preferential crystalline orientation of Cu₃N film is changed from (111) to (100). With increasing of substrate temperature from 70 °C to 200 °C, the film phase is changed from Cu₃N phase to Cu. With increasing sputtering power from 80 W to 120 W, the optical energy decreases from 1.85 eV to 1.41 eV while the electrical resistivity increases from 1.45 ×10² Ω · cm to 2.99 × 10³ Ω · cm, respectively.     

Preparation of Indium Tin Oxide Films on Polycarbonate substrates by Radio-frequency Magnetron Sputtering

1Introduction Indiumtinoxide(ITO)isadegeneraten typesemi conductingmaterialthathaswideapplicationsinoptics andoptoelectronics,suchasflatpaneldisplaydevices,antireflectioncoatings,pilotwindows,andheterojunction solarcells.Itselectricalopticalpropertieshave…     

Effects of N<Subscript>2</Subscript> pressure on the structural and electrical properties of tin films deposited by laser molecular beam epitaxy

Titanium nitride (TiN) films were deposited on Si(100) substrates by laser molecular beam epitaxy(LMBE), and their properties of structure and resistivity with varying N₂ pressure were investigated. The results showed that atomically flat TiN films with layer-by-layer growth mode were successfully grown on Si(100) substrates, and (200) was the preferred orientation. With the increasing of N₂ pressure, the N/Ti ratio gradually increased and the diffraction peak progressively shifted towards lower diffraction angle. At pressure of 0.1 Pa, stoichiometric TiN film was formed which exhibited the characteristic diffraction angle of (200) plane. All films showed high reflectance to infrared spectrum and the films with overstoichiometry and understoichiometry had a higher resistivity owing to the surface particles and lattice distortion, while the stoichiometric TiN film depicted the minimum resistivity, around 19 μΩ·cm.     

Physical properties of Al-doped ZnO and Ga-doped ZnO thin films prepared by direct current sputtering at room temperature

Al-doped zinc oxide(AZO) and Ga-doped zinc oxide(GZO) thin films with the same doping concentration(3.6 at%) were deposited on glass substrates at room temperature by direct current(DC) magnetron sputtering.Consequently,we comparatively studied the doped thin films on the basis of their structural,morphological,electrical,and optical properties for optoelectronic applications.Both thin films exhibited excellent optical properties with more than 85%transmission in the visible range.The GZO thin film had better crystallinity and smoother surface morphology than the AZO thin film.The conductivity of the GZO thin film was improved compared to that of the AZO thin film:the resistivity decreased from 1.01×10~(-3) to 3.5×10~(-4) Ω cm,which was mostly due to the increase of the carrier concentration from 6.5×10~(20) to 1.46×10~(21)cm~(-3).These results revealed that the GZO thin film had higher quality than the AZO thin film with the same doping concentration for optoelectronic applications.     

Preparation and electrical properties of BaPbO3 thin film

BaPbO3 thin films were deposited on Al2O3 substrates by sol-gel spin-coating and rapid thermal annealing. The microstructure and phase of BaPbO3 thin films were determined by X-ray diffractometry, scanning electrons microscopy and energy dispersive X-ray spectrometry. The influence of annealing temperature and annealing time on sheet resistance of the thin films was investigated. The results show that heat treatment, including annealing temperature and time, causes notable change in molar ratio of Pb to Ba, resulting in the variations of sheet resistance. The variation of electrical properties demonstrates that the surface state of the film changes from two-dimensional behavior to three-dimensional behavior with the increase of film thickness. Crack-free BaPbO3 thin films with grain size of 90 nm can be obtained by a rapid thermal annealing at 700 ℃ for 10 min. And the BaPbO3 films with a thickness of 2.5 μm has a sheet resistance of 35 Ω·-1.     

Influence of deposition pressure on properties of ZnO: Al films fabricated by RF magnetron sputtering

Transparent conductive aluminum doped zinc oxide(ZnO:Al,AZO) films were prepared on glass substrates by rf(radio frequency) magnetron sputtering from ZnO: 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure(PAr) was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction(XRD) and scanning electron microscopy(SEM) showed that the ZnO:Al thin films were(002) oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10~(-4) Ω?cm(sheet resistance=9.6 Ω/sq. for a thickness=600 nm) obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible(UV-VIS) spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.