三／四节串联锂电池保护系统设计

三／四节串联锂电池保护系统采用充电、放电分离的控制方式,对各种三／四节锂离子可充电电池串联使用场合的充电、放电过程进行严格地控制和保护,具有两级单节过充电保护、单节过放电保护、两级放电过电流保护、放电短路保护、放电温度保护、充电温度保护、充电防反接保护、充电时禁止放电等功能,以确保锂电池的使用安全性和延长锂电池的使用寿命,其电路简单、可靠、有效。     

锂电池组充放电安全保护电路设计

本论文采用LPC768单片机强大的逻辑控制能力,同时监测多节锂电池并联充电过程,通过恒流恒压模式充电实现了对锂电池充电状态的监测和对锂电池过度充电及过电流的保护功能,保证充电过程中的安全性,实现了对锂电池组充电过程的均衡管理。     

高效率激光无线能量传输系统闭环控制研究

为了实现高效率激光无线能量传输系统的研究,基于Simulink建立了激光无线能量传输系统的闭环控制仿真模型,实现了激光光伏阵列的最大功率点追踪、降压电路搭建和锂电池智能充电控制,并结合激光光伏阵列的输出特性和锂电池多阶段恒流充电方法的特性,提出了一种基于激光功率密度闭环信号控制的新型锂电池多阶段恒流充电方法。结果表明,该方法不仅可以实现传统锂电池多阶段恒流充电效果,而且节省了62.9%的光能,系统转换效率提高了62.96%。该结果对研究高效率激光无线能量传输系统是有帮助的。     

微型PSA制氧机电池智能管理系统设计

为微型PSA制氧机电池设计一种智能管理系统,以C8051F310为控制核心,结合锂电池充电保护芯片CN3704和电池监测芯片DS2438,对锂电池充放电进行保护并对其状态进行在线监测。该系统实现了对锂电池过充、过放、过流和短路的保护,并具有实时显示状态信息和报警提示的功能。电池智能管理系统电路简单、稳定性好、可靠性高,提高了充电安全性,延长了电池使用寿命,为微型PSA制氧机的稳定运行提供了可靠的电源保证。     

基于可中断恒流-恒压方法的锂电池充电控制器

为提高锂电池充电的效率,延长电池寿命,提出一种新的基于可中断恒流-恒压控制方法的锂电池充电管理芯片的设计,并针对充电的安全性问题,加入了电池工作温度异常中断机制,可在电池温度过高或者过低时有效保护电池,还可使用户根据典型(而不是最差条件下的)环境温度来设置充电电流,提高了充电效率。提出的新型恒流-恒压控制电路具有结构简单、控制精度高的优点。芯片采用1.5μm BCD的工艺进行了设计和流片。测试结果成功验证了所提出的控制策略及芯片的功能。     

带有显示功能的锂电池和镍铬电池充电系统

系统以PIC16F873单片机和LTC4002锂电池充电芯片为核心,针对不同电池特性,采用不同的充电方式,可以对目前广泛使用的锂电池和镍铬电池充电,同时具有实时显示充电及放电电流、电池电压,容量统计和电池特性等功能,实现了符合铁道部所有相关规范的列车尾部保护装置的充电系统。     

基于PIC16F883的锂电池智能充电器的设计与实现

设计了一个具有充放电功能的锂电池充电器,充电电路采用数字控制的Buck变换器,放电电路采用高效率的集成Boost变换器。充电器采用DC/DC拓扑结合脉冲充电控制的充电方案。系统以集成了多种外围模块的PIC16F883单片机作为控制核心,控制电路简洁有效,具备对锂离子电池进行过充、过放和过温保护的功能。     

带有数据显示功能的锂电池和镍镉电池充电系统

本系统以PIC16F873单片机和LTC4002锂电池充电芯片为核心,针对不同电池的特性,采用不同的充电方式,可以对目前广泛使用的锂电池和镍镉电池充电,同时具有实时显示充电及放电电流、电池电压、容量统计和电池特性等功能,实现了符合铁道部所有相关规范的列车尾部保护装置的充电系统。     

基于温度自适应控制的太阳能电源管理系统

摘要：本设计基于LTC4121实现锂电池的充电管理,并结合放电管理电路和温度控制电路实现了一整套针对锂电池的太阳能电源管理系统。通过试验研究的方法对该系统充放电电路的充放电性能、温度自适应功能进行验证。研究结果表明：所研究的温度自适应控制的太阳能电源管理系统具有良好的充放电性能、充电效率达80%以上,可实现低温环境下对锂电池的充放电管理,具有较高的工程应用价值。     

八路锂电池充电器

近几年电池技术的革新主要体现在锂电池技术上,锂电池的容量比目前大批量生产的任何可充电电池如NiCd、NiMH电池的容量都大,而且锂电池具有质量较轻的特点,同等质量的容量相比,锂电池容量是NiMH电池的近两倍。这些优势使得锂电池越来越多得以应用。然而锂电池也有不足之处,对过充电和过放电十分敏感,这就要求锂电池充电器严格限制额值电压防止过充电。     

A Bidirectional DC–DC Converter for an Energy Storage System With Galvanic Isolation

This paper addresses a bidirectional dc-dc converter suitable for an energy storage system with an additional function of galvanic isolation. An energy storage device such as an electric double layer capacitor is directly connected to a dc side of the dc-dc converter without any chopper circuit. Nevertheless, the dc-dc converter can continue operating when the voltage across the energy storage device drops along with its discharge. Theoretical calculation and experimental measurement reveal that power loss and peak current impose limitations on a permissible dc-voltage range. This information may be useful in design of the dc-dc converter. Experimental results verify proper charging and discharging operation obtained from a 200-V, 2.6-kJ laboratory model of the energy storage system. Moreover, the dc-dc converter can charge the capacitor bank from zero to the rated voltage without any external precharging circuit.     

面向蓄电池的多输入源低功耗充电电路设计

针对蓄电池的储能问题,提出了一种多输入源且可扩充的高效充电电路和相应的控制算法。该充电电路主要由数字控制单元（DCU）、比较器、基于Dickson电荷泵结构的时钟倍压器（CVD）以及模拟开关组成,可以对多个独立能量采集器（EH）进行电能收集。该系统支持通过热插拔方式扩充任意数量的EH。提出的控制算法可以将从各个EH采集到的能量传递到能量储存装置而不会互相干扰。采用0.18 μm CMOS工艺对提出电路进行了具体实现。实验结果显示,相比类似的蓄电池充电系统,该充电电路的功耗最低,只需1.72μW的功耗,能够为三个输入源提供高达96.1%的最大充电效率。     

Temperature study of the dielectric polarization effects of capacitive RF MEMS switches

This paper investigates both theoretically and experimentally the dielectric charging effects of capacitive RF microelectromechanical system switches with silicon nitride as dielectric layer. Dielectric charging caused by charge injection under voltage stress was observed. The amphoteric nature of traps and its effect on the switch operation were confirmed under both positive and negative control voltages. It has been confirmed that charging is a complicated process, which can be better described through the stretched exponential relaxation. This mechanism is thermally activated with an activation energy being calculated from the temperature dependence of the capacitance transient response. The charging mechanism, which is responsible for the pull-out voltage and the device failure, is also responsible for the temperature-induced shift of the capacitance minimum bias.     

独立光伏发电系统中蓄电池充电方法探究

蓄电池是独立光伏发电系统中必不可少的储能环节,研究其充电方法具有特殊的意义。文章在介绍几种充电方法的基础上,提出一种基于UC3909的四阶段充电方式,并搭建实验电路,对样机进行充电实验。实验结果表明该方法简单有效,充电器工作稳定可靠,能够保证系统的稳定运行。     

间歇-正负脉冲蓄电池快速充电方法的研究

目前影响锂离子电池充电速度的关键问题之一是如何消除或减小充电过程中的极化现象。传统的快速充电法中使用比较广泛的是多阶恒流脉冲充电法,主要采用正脉冲、停充等方式来减小或消除极化效应,在一定程度上提高了充电速度,但效果不够理想。提出的间歇-正负脉冲充电法,首先依据析气点电压和极化电压监测蓄电池极化状况,然后采用两种模糊控制器,分别确定间歇-正负脉冲充电法中的正负脉冲宽度,采用交替充电和放电减少或消除充电过程中的极化现象。实验证明,间歇-正负脉冲充电方法比传统的采用停充方式的多阶恒流脉冲充电法充电速度提高了33.3%,充电效率提高了5.1%,温升降低了57%。     

Hybrid Smart Fiber with Spontaneous Self‐Charging Mechanism for Sustainable Wearable Electronics

Smart wearable electronics that are fabricated on light‐weight fabrics or flexible substrates are considered to be of next‐generation and portable electronic device systems. Ideal wearable and portable applications not only require the device to be integrated into various fiber form factors, but also desire self‐powered system in such a way that the devices can be continuously supplied with power as well as simultaneously save the acquired energy for their portability and sustainability. Nevertheless, most of all self‐powered wearable electronics requiring both the generation of the electricity and storing of the harvested energy, which have been developed so far, have employed externally connected individual energy generation and storage fiber devices using external circuits. In this work, for the first time, a hybrid smart fiber that exhibits a spontaneous energy generation and storage process within a single fiber device that does not need any external electric circuit/connection is introduced. This is achieved through the employment of asymmetry coaxial structure in an electrolyte system of the supercapacitor that creates potential difference upon the creation of the triboelectric charges. This development in the self‐charging technology provides great opportunities to establish a new device platform in fiber/textile‐based electronics.     

多隧道结单电子动态存储器的Monte Carlo模拟

本文采用Monte Carlo方法模拟了多隧道结单电子动态存储器的存储特性，考察了隧道结的个数、隧道结电容、隧道结电阻、脉冲电压幅度等参数对存储器的存储时间和饱和充电电荷的影响，并与宏观RC电路进行了比较。     

宽电压输入智能光伏充电控制系统

设计一款具有最大功率点追踪功能的宽电压输入智能光伏充电控制系统。系统采用恒压法和小步长扰动观察法相结合的方式,实现最大功率点的跟踪控制,通过对充电电压、充电电流及蓄电池表面温度的检测,智能地选择快速脉冲充电、浮充充电、自动停止充电等工作模式,使充电过程始终处于安全状态。实际运行结果表明：该系统可在5～26V的输入电压范围内正常工作,充电过程精确可控。     

GaAs m.a.o.s.f.e.t. memory transistor

A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.     

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II–VI Zn_0.56Cd_0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn_0.56Cd_0.44Se QDs are presented in a conventional metal–oxide–semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II–VI material Zn_0.56Cd_0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance–voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied “write” voltage.