在外电场作用下有限抛物量子阱中类氢杂质态结合能

采用变分方法研究GaAs/AlxGa1-xAs有限抛物量子阱中类氢杂质态能量和结合能随外电场和阱宽的变化关系.在计算中考虑了电子有效带质量和介电常数随空间坐标(或合金组分)的变化因素.结果表明,外电场对类氢杂质态能量和结合能均有明显的影响,并且这些影响随着阱宽的增大而增大.电子有效带质量和介电常数随空间坐标的变化效应使得类氢杂质态基态能量减小,结合能增大,此效应随着阱宽的增大明显变小.     

在磁场作用下氮化物抛物量子阱中杂质态能量

采用变分法研究了在外磁场作用下GaN／AlxGa1-xN无限抛物量子阱（PQW）中类氢杂质态能级,给出不同磁场下杂质态基态能、结合能随阱宽的变化关系以及能量随磁场强度变化的函数关系。数值结果表明：外磁场对类氢杂质能量和结合能均有明显的影响,杂质态能量随磁场的增强而显著增大,并且随阱宽的增大而增大;GaN／Al0.3Ga0.7 N PQW对杂质态的束缚程度比GaAs／Al0.3Ga0.7As PQW强。     

压力下屏蔽对有限深量子阱中施主结合能的影响

考虑电子有效质量、材料介电常数及禁带宽度随流体静压力的变化,以及准二维电子气对杂质库仑势的屏蔽影响,利用变分法讨论有限深量子阱中的施主杂质态能级.对GaAs/AlxGa1-xAs量子阱系统中的杂质态结合能进行了数值计算,给出结合能随铝组分、阱宽和压力的变化关系,并讨论了有无屏蔽时的区别.结果表明,屏蔽效应随着压力增加而增加且显著降低杂质态的结合能.     

压力下屏蔽对有限深量子阱中施主结合能的影响

考虑电子有效质量、材料介电常数及禁带宽度随流体静压力的变化,以及准二维电子气对杂质库仑势的屏蔽影响,利用变分法讨论有限深量子阱中的施主杂质态能级.对GaAs/AlxGa1-xAs量子阱系统中的杂质态结合能进行了数值计算,给出结合能随铝组分、阱宽和压力的变化关系,并讨论了有无屏蔽时的区别.结果表明,屏蔽效应随着压力增加而增加且显著降低杂质态的结合能.     

像势对量子阱中类氢杂质Stark效应的影响

在考虑像势影响的情况下，利用变分方法计算了垂直电场下量子阱中类氢杂质的结合能，给出了像势引起的结合能增量随阱宽、杂质位置和电场的变化曲线．结果表明：考虑像势对量子阱中类氢杂质结合能及其Ｓｔａｒｋ效应的影响是很必要的，而且自像势和互像势对类氢杂质结合能Ｓｔａｒｋ效应的影响是相反的．     

垂直电场中GaAs-Ga_(1-x)Al_xAs量子阱内类氢杂质束缚能计算

在有效质量近似下,研究电场对GaAs-Ga_(1-x)Al_xAs量子阱子带和类氢杂质束缚能的影响.计算中考虑到了GaAs和Ga_(1-x)Al_xAs中的电子具有不同的有效质量和不同的介电常数.数值计算结果表明,GaAs和Ga_(1-x)Al_xAs中电子有效质量的差异将对电子子带产生较大影响;在阱宽较小时(约10A左右),垂直电场对量子阱内类氢杂质束缚能影响较大.     

非对称应变纤锌矿AlxGa1-xN/GaN/AlyGa1-yN量子阱中浅杂质态的结合能

本文采用变分法数值计算应变纤锌矿AlxGa1−xN/GaN/AlyGa1−yN量子阱中类氢杂质的基态结合能. 计及由自发极化和压电极化引起的内建电场, 讨论阱宽、杂质位置以及左右垒中Al组分对结合能的影响. 结果表明, 尤其在非对称量子阱即势垒宽度或（和）高度不一样的情形下, 杂质位置和垒高对结合能随阱宽变化关系的影响比垒宽更为明显. 对称或非对称结构中, 结合能随杂质位置的变化形如电子基态波函数的空间分布. 此外, 左垒中Al组分对结合能的影响较右垒更甚.     

纤锌矿氮化物半导体束缚极化子及压力效应

考虑到纤锌矿结构的氮化物半导体材料的单轴异性,采用变分法研究了两支异常光学声子LO-like和TO-like对杂质态结合能的影响,即极化子效应.计及电子有效质量,材料介电常数及晶格振动频率随流体静压力的变化,讨论了束缚极化子结合能的压力效应,数值结果表明,极化子效应使杂质态结合能明显降低,极化子效应的主要贡献来自杂质态与LO-like声子的相互作用.压力使得结合能增加,且增强了结合能的各向异性.     

纤锌矿氮化物半导体束缚极化子及压力效应

考虑到纤锌矿结构的氮化物半导体材料的单轴异性,采用变分法研究了两支异常光学声子LO-like和TO-like对杂质态结合能的影响,即极化子效应.计及电子有效质量,材料介电常数及晶格振动频率随流体静压力的变化,讨论了束缚极化子结合能的压力效应,数值结果表明,极化子效应使杂质态结合能明显降低,极化子效应的主要贡献来自杂质态与LO-like声子的相互作用.压力使得结合能增加,且增强了结合能的各向异性.     

磁场对氮化物抛物量子阱中束缚极化子的影响

采用改进的Lee-Low-Pines中间耦合方法研究了在外磁场作用下纤锌矿氮化物抛物量子阱中极化子能级,给出不同磁场下极化子基态能量、结合能随阱宽L的变化关系以及能量随磁场强度B变化的函数关系。在计算抛物量子阱材料中考虑了纤锌矿GaN和Al0.3Ga0.7N构成的抛物量子阱中材料中准LO和准TO声子模的各向异性以及外磁场对极化子能量的影响。结果表明:纤锌矿氮化物抛物量子阱材料中电子-声子相互作用和外磁场对极化子能级有明显的影响。极化子基态能量、结合能随阱宽的增加而减小,随磁场的增加而增大,电子-声子相互作用使极化子能量降低,并且GaN/Al0.3Ga0.7N抛物量子阱对极化子的束缚程度比GaAs/Al0.3Ga0.7As抛物量子阱强,因此,在GaN/Al0.3Ga0.7N抛物量子阱中束缚于杂质中心处的电子比在GaAs/Al0.3Ga0.7As抛物量子阱中束缚于杂质中心处的电子稳定。     

On a wing and a prayer

Aircraft giants Boeing and Airbus are pinning their hopes on very different visions of how air travel will evolve in the coming decade.     

Building a in a flash supercomputer

A flash mob is a group of strangers, organized over the Internet, that comes together briefly, acts out a predetermined scenario-often something as simple as clapping for 30 seconds-and then disperses. A supercomputer is a very fast and powerful computer that outperforms most mainframes, at a cost, typically, of millions of dollars. Can a flash mob build a supercomputer? It can sure try, and so it did on 3 April at the University of San Francisco's Koret athletic center. The goal was to run the Linpack benchmark, a standard method of assessing the speed of supercomputers, to achieve a speed of at least 403 gigaflops (billion floating point operations per second). This would be fast enough to earn the system a place on the list of the world's fastest 500 supercomputers. The goal was not reached. The group reached just 180 gigaflops before it was time to pack up the computers and go home. However, even though the San Francisco effort fell short of speed goal, it did ignite imaginations.     

一年之间，物换星移

去年的这个时候,供货商们还在为生存而挣扎。如今,2009年的年报已经公布,许多供应商的年报业绩之好,就连最乐观的分析师也始料未及。这种变化的原因很简单：供应商们大幅削减成本,接下来是强劲的需求,这又导致了随后高企的设备利用率。     

Cooperative control of a human and a robot manipulator for positioning a cart on a frictionless plane

Robots may be expected to execute some tasks in cooperation with humans. Control systems for such robots should be appropriate to adapt to human characteristics in order to successfully accomplish the task. Pushing a cart on a frictionless plane in cooperation with a human is a basic example to such a task. To control the motion of an object from one point to another on a frictionless plane is impossible by only pushing in one direction without supporting it in the opposite direction, since as soon as the force is applied, the object will move without stopping its motion. In this paper, compliant cooperative positioning of a cart on a frictionless plane by a human and a manipulator is proposed using impedance control method with the parameters obtained from human–human cooperation.     

Analysis of a coaxial-to-waveguide adaptor including a discendedprobe and a tuning post

A field matching analysis of a coaxial-to-waveguide adaptor incorporating a disc-ended probe and a tuning post is presented. In this analysis, the tuning post is considered as a short-circuited second probe. A computer algorithm for calculating the input impedance of this structure is developed. This algorithm is used to investigate and improve the operation of a commercially available coaxial-to-waveguide adaptor     

Transmission-Line Properties of a Strip on a Dielectric Sheet on a Plane

The subject is a strip Iine formed of a strip and a parallel ground plane separated by a dielectric sheet (commonly termed "microstrip"). Building on the author's earlier papers all the significant properties are formulated in explicit form for practical applications. This may mean synthesis and/or analysis. Each formula is a close approximation for all shape ratios, obtained by a gradual transition between theoretical forms for the extremes of narrow and wide strips. The effect of thickness is formulated to a second-order approximation. Then the result is subjected to numerical differentiation for simple evaluation of the magnetic-loss power factor from the skin depth. The transition formulas are tested against derived formulas for overlapping narrow and wide ranges of shape. Some of these formulas are restated from the earlier derivations and others are derived herein. The latter include the second-order approximation for a narrow thin strip, and a close approximation for a narrow or wide square cross section in comparison with a circular cross section. Graphs are given for practical purposes, showing the wave resistance and magnetic loss for a wide range of shape and dielectric. For numerical reading, the formulas are suited for programming on a digital pocket calculator.     

基于智能手机压电基片上微液滴位置分析章

为了降低微流分析成本,该文提出了基于智能手机检测压电基片上目标微液滴方法,并开发出相应的应用软件,通过分析微液滴颜色信息和几何信息定位目标微液滴位置,结合分析时间获取微液滴输运速度。为验证提出方法的正确性,以5 μL黑色墨水溶液微液滴为研究对象,进行压电基片上微液滴识别和位置分析实验。结果表明,该文所提方法和开发的应用软件可识别和定位压电基片上微液滴,在功率为27.5 dBm时,第2~10 s段内微液滴输运速度为0.416 mm/s。     

The measurement of a large antenna using a spacecraft as a receiver

Two computational methods for obtaining the gain pattern of a large antenna using power levels recorded by a spacecraft are developed from the transmission equation. Nominally, the large antenna is linearly polarized while the spacecraft's receiving antennas are circularly polarized. Since the spacecraft has no attitude control system, the orientation of the receiving antennas is not known a priori nor its orientation the same from orbit to orbit. The first method relies on an independent spacecraft attitude determination system to furnish the orientation of the receiving antennas. It combines this information with receiving-antenna gain measurements to give the power level of the incident radiation. Losses due to polarization mismatch are taken into account, but polarization loss factors are not actually computed. The second method relates simultaneous measurements made by separate channels with separate receiving antennas. By solving a system of equations numerically, one can determine the direction of the incident radiation as well as its power level. This alleviates the need for an attitude determination system. These methods originated in the operations of the spacecraft NUSAT1 (northern Utah Satellite)