Thermoelectric properties of Bi2SexTe3−x prepared by Bridgman method

Bi₂Se_xTe_3−x crystals with various x values were grown by Bridgman method. The electrical conductivity, σ, was found to decrease with increasing Se content. The highest σ of 1.6 × 10⁵ S m⁻¹ at room temperature was reached at x = 0.12 with a growth rate of 0.8 mm h⁻¹. The Seebeck coefficient, S, was less dependent on Se content, all with positive values showing p-type characteristics, and the highest S was measured to be 240 μV K⁻¹ at x = 0.24. The lowest thermal conductivity, κ, was 0.7 W m⁻¹ K⁻¹ at x = 0.36. The electronic part of κ, κ_el, showed a decrease with increasing Se content, which implies that the hole concentration as the main carriers was reduced by the addition of Se. The highest dimensionless figure of merit, ZT, at room temperature was 1.2 at x = 0.36, which is attributed to the combination of a rather high electrical conductivity and Seebeck coefficient and low thermal conductivity.     

Studies on the power factor of (Ba,Sr)Co2+xRu4−xO11 compounds

We have prepared polycrystalline single-phase ACo_2+xRu_4−xO₁₁ (A = Sr, Ba; 0 ≤ x ≤ 0.5) using the ceramic method and we have studied their structure, electrical resistivity and Seebeck coefficient, in order to estimate their power factor (P.F.). These layered compounds show values of electrical resistivity of the order of 10⁻⁵ Ωm and their Seebeck coefficients are positive and range from 1 μV K⁻¹ (T = 100 K) to 20 μV K⁻¹ (T = 450 K). The maximum power factor at room temperature is displayed by BaCo₂Ru₄O₁₁ (P.F.: 0.20 μW K⁻² cm⁻¹), value that is comparable to that shown by compounds such as SrRuO₃ and Sr₆Co₅O₁₅.     

Preparation and electrical properties of perovskite ceramics in the system BaBi1−xSbxO3 (0 ≤ x ≤ 0.5)

The effect of the composition on the electrical properties of BaBi_1−xSb_xO₃ (0 ≤ x ≤ 0.5) negative temperature coefficient (NTC) thermistors was studied. Major phases present in the sintered bodies of BaBi_1−xSb_xO₃ (0 < x < 0.5) ceramics were BaBi_0.5Sb_0.5O₃ compounds with a rhombohedral structure and BaBiO₃ compounds with a monoclinal structure. Most pores were located in the grains of BaBiO₃ and BaBi_0.5Sb_0.5O₃ ceramics. It was apparent that the ρ₂₅ and B_25/85 constant of the thermistors increased with increasing Sb content.     

Magnetomechanical properties of epoxy-bonded Sm1−xNdxFe1.55 (0 ≤ x ≤ 0.56) pseudo-1-3 magnetostrictive particulate composites

Pseudo-1-3 magnetostrictive particulate composites consisting of light rare earth (Sm and Nd)-based magnetostrictive Sm_1−xNd_xFe_1.55 particles with the Nd content x of 0-0.56 and randomly distributed sizes of 10-180 μm embedded and aligned in a passive epoxy matrix are fabricated using the particulate volume fraction of 0.5. The quasistatic magnetomechanical properties of the composites are investigated and the results are compared with their monolithic alloys for various x. The composites exhibit similar qualitative trends in properties with the alloys for all x. The Sm_0.92Nd_0.08Fe_1.55 composite shows a large unsaturated magnetostriction λ of −530 ppm at 500 kA/m and a high piezomagnetic coefficient d₃₃ of −2.0 nm/A at 100 kA/m as a result of the magnetocrystalline anisotropy compensation between Sm³⁺ and Nd³⁺ ions in the Sm_0.92Nd_0.08Fe_1.55 alloy.     

Phase range and physical properties of the thallium tin tellurides Tl10−xSnxTe6 (x ≤ 2.2)

Crystal structures and physical property measurements were determined for Tl_10−xSn_xTe₆ with a phase range of 0 ≤ x ≤ 2.2. These tellurides are substitution variants of Tl₅Te₃. Electronic structure calculations indicate that Tl₈Sn₂Te₆ should be an intrinsic semiconductor, and the Sn-poor variants, extrinsic ones with p-type conduction. The positive Seebeck values increase with increasing Sn content, while the electrical and thermal conductivity values decrease. Low thermal conductivity values, well below 1 W m⁻¹ K⁻¹, are the best asset of these materials with respect to thermoelectric performance. At x = 2.2, the best thermoelectric properties were obtained, with a figure-of-merit ZT = 0.60 at 617 K as determined on sintered cold-pressed pellets.     

Effect of the sintering temperature on the properties of nanocrystalline Ca1−xSmxMnO3 (0 ≤ x ≤ 0.4) powders

Nanocrystalline Ca_1−xSm_xMnO₃ (0 ≤ x ≤ 0.4) manganites were prepared by a soft chemical method (Pechini method) followed by auto-combustion and sintering in air at 1073 or 1473 K. Single-phase powders with general composition Ca_1−xSm_xMnO₃ were obtained after 18 h annealing. The particle and grain sizes of the substituted Sm-manganites did not exhibit variation with samarium content, but increase with increasing the sintering temperature. All manganites show two active IR vibrational modes near 400 and 600 cm⁻¹ characteristic of the BO₆ octahedron vibrations.For the samples sintered at T_s = 1473 K, the partial substitution of calcium by samarium in the CaMnO₃ phase induces a marked decrease in the electrical resistivity, in the temperature range of 300-900 K, and at the same time a metal-to-insulator transition occurs; for T_s = 1073 K all the samples present semiconductor behaviour. With the increase of the annealing temperature the grain size increases and a metal-semiconductor transition appears. The results can be ascribed to the Mn⁴⁺/Mn³⁺ ratio and particle grain size. The effects of particle size on the electrical properties can be attributed to the domain status, changes in the Mn-O-Mn bond angle and Mn-O bond length.     

Electrical properties of binder-free thick film BaYxBi1−xO3 NTC thermistors

The microstructure and electrical properties of BaY_xBi_1−xO₃ thick film negative temperature coefficient thermistors, fabricated by screen printing, were investigated. The sintered thick films were the single-phase solid solutions of the BaY_xBi_1−xO₃ compounds with a monoclinic structure. The added Y₂O₃ led to a significant decrease in the grain size of the thermistors. The resistivity and coefficient of temperature sensitivity for the BaY_xBi_1−xO₃ (0 ≤ x ≤ 0.15) thick film NTC thermistors decreased first with increasing x in the range of x < 0.04 and then increased with further increase in x.     

Fabrication and properties of p-type K doped Zn1−xMgxO thin film

A series of K doped Zn_1−xMg_xO thin films have been prepared by pulsed laser deposition (PLD). Hall-effect measurements indicate that the films exhibit stable p-type behavior with duration of at least six months. The band gap of the K doped Zn_1−xMg_xO films undergoes a blueshift due to the Mg incorporation. However, photoluminescence (PL) results reveal that the crystallinity decreased with the increasing of Mg content. The fabricated K doped p-type Zn_0.95Mg_0.05O thin film exhibits good electrical properties, with resistivity of 15.21 Ω cm and hole concentration of 5.54 × 10¹⁸ cm⁻³. Furthermore, a simple ZnO-based p-n heterojunction was prepared by deposition of a K-doped p-type Zn_0.95Mg_0.05O layer on Ga-doped n-type ZnO thin film with low resistivity. The p-n diode heterostructure exhibits typical rectification behavior of p-n junctions.     

Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics

The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(Zr_xTi_1−x)O₃(MZ_xT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(Zr_xTi_1−x)O₃ ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr⁴⁺ substitution in the B-site could increase density and grain size. An excess of Zr⁴⁺ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZ_xT ceramics. The temperature coefficient of resonant frequency (τ_f) of Mg(Zr_xTi_1−x)O₃ ceramics slightly increased with increasing Zr content, and the variation in τ_f was attributed to the formation of secondary phases.     

Resistivity, thermopower, and thermal conductivity of nickel doped compounds Cr1−xNixSb2 at low temperatures

Substitutional compounds Cr_1−xNi_xSb₂ (0 ≤ x ≤ 0.1) were synthesized, and the effect of Ni substitution on transport and thermoelectric properties of Cr_1−xNi_xSb₂ were investigated at the temperatures from 7 to 310 K. The results indicated that the magnitudes of the resistivity and thermopower of Cr_1−xNi_xSb₂ decreased greatly with increasing Ni content at low temperatures, owing to an increase in electron concentration caused by Ni substitution for Cr. Experiments also showed that the low-temperature lattice thermal conductivity of Cr_1−xNi_xSb₂ decreased substantially with increasing Ni content due to an enhancement of phonon scattering by the increased number of Ni atoms. As a result, the figure of merit, ZT, of lightly doped Cr_0.99Ni_0.01Sb₂ was improved at T > ∼230 K. Specifically, the ZT of Cr_0.99Ni_0.01Sb₂ at 310 K was approximately ∼29% larger than that of CrSb₂, indicating that thermoelectric properties of CrSb₂ can be improved by an appropriate substitution of Ni for Cr.     

Infrared emissivities and microwave absorption properties of perovskite Sm0.5Sr0.5Co1−xFexO3 (0 ≤ x ≤ 0.5)

Sm_0.5Sr_0.5Co_1−xFe_xO₃ (0 ≤ x ≤ 0.5, SSCF) with perovskite-type structure has been successfully prepared by conventional solid-state reaction as a microwave and infrared multi-functional material. The effects of Fe incorporation on the structure, electrical conductivity, infrared emissivity and microwave-absorbing properties were investigated in detail. XRD results have shown that the perovskite structure of SSCF has an orthorhombic symmetry for 0 ≤ x ≤ 0.4 and a cubic symmetry for 0.5, respectively. The incorporation of Fe in SSCF could contribute to the decrease of electrical conductivity, while the infrared emissivities are increased. Moreover, microwave-absorbing properties in the frequency range of 2-18 GHz at room temperature are sensitive to Fe content. The complex permittivity, complex permeability and electromagnetic loss tangent have suddenly a step change at a certain frequency and the step-change frequency position moves slightly to lower frequencies with Fe increased. The optimal reflection loss calculated from the measured permittivity and permeability is 29.33 dB at 7.97 GHz with a thickness of 2.0 mm.     

Preparation and characterization of La1−xKxFeO3 (x = 0-1) by self-propagating high-temperature synthesis for use as soot combustion catalyst

This paper proposes La_1−xK_xFeO₃ prepared by self-propagating high-temperature synthesis (SHS) as an alternative to platinum catalysts for promoting diesel soot combustion. The catalytic property of eleven products SHSed with different substitution ratios of potassium (x = 0-1) was experimentally evaluated using a thermobalance. In the mass loss curves of the product, T₅₀ was defined as the temperature at which the weight of the reference soot decreases to half its initial weight. The BET specific surface area of SHSed La_1−xK_xFeO₃ depended on x strongly. All the products showed good oxidation catalytic activity. Despite having the smallest surface area (0.11 m²/g) among the obtained products, La_0.9K_0.1FeO₃ (x = 0.1) was found to be the best catalyst with the lowest T₅₀ (442 °C). T₅₀ of La_1−xK_xFeO₃ decreased with increasing x for x > 0.2. The products with x = 0.6 and 0.8 were the second-best catalysts in terms of their T₅₀. Moreover, average apparent activation energy of La_0.9K_0.1FeO₃ (x = 0.1) calculated by Friedman method using TG was as much as 61 kJ/mol lower than that of Pt/Al₂O₃ catalyst. In conclusion, potassium-substituted SHSed La_1−xK_xFeO₃ can be used as an alternative to Pt/Al₂O₃ for soot combustion.     

Growth and characterization of chemical bath deposited Cd1−xZnxS thin films

Cd_1−xZn_xS (0 ≤ x ≤ 1) thin films have been deposited by chemical bath deposition method on glass substrates from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 80 ± 5 °C and after annealed at 350 °C. The structural, morphological, compositional and optical properties of the deposited Cd_1−xZn_xS thin films have been studied by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), photoluminescence (PL) and UV-vis spectrophotometer, respectively. X-ray diffraction analysis shows that for x < 0.8, the crystal structure of Cd_1−xZn_xS thin films was hexagonal structure. For x > 0.6, however, the Cd_1−xZn_xS films were grown with cubic structure. Annealing the samples at 350 °C in air for 45 min resulted in increase in intensity as well as a shift towards lower scattering angles. The parameters such as crystallite size, strain, dislocation density and texture coefficient are calculated from X-ray diffraction studies. SEM studies reveal the formation of Cd_1−xZn_xS films with uniformly distributed grains over the entire surface of the substrate. The EDX analysis shows the content of atomic percentage. Optical method was used to determine the band gap of the films. The photoluminescence spectra of films have been studied and the results are discussed.     

Room temperature electroresistance in Sr2−xGdxMnTiO6 perovskites (0 ≤ x ≤ 1)

We report on the room temperature strong (∼80%) electroresistance (ER) in the double perovskite with mixed Mn valence: Sr_2−xGd_xMnTiO₆, 0 ≤ x ≤ 1. Both, continuous and pulsed current-voltage curves are almost identical which indicates that the observed electroresistance is not associated with heating. This is also supported by simultaneous temperature measurements. ER is negligible (absent) in the x = 0 compound and increases with the increase of Gd content ‘x’. The amplitude of ER has a maximum for x = 0.75, suggesting that ER is determined by both the double exchange and the Mn³⁺ concentration. At the same time, magnetic interactions change from the antiferromagnetic (x = 0) to ferromagnetic ones as x → 1, thus linking the ER with ferromagnetism.     

Effect of Ca-doping on the structural and electrical properties of CuY1−xCaxO2 (0 ≤x ≤0.10) ceramics

Delafossites CuY_1−xCa_xO₂ (0 ≤x ≤0.10) ceramics have been prepared by solid state reaction using Cu₂O, Y₂O₃ and CaCO₃. Liquid phase sintering, which obviously accelerates the reaction speed of Cu₂O-Y₂O₃-CaCO₃ system and promotes the formation of CuYO₂ phase is evidenced for the Ca-doped samples. During the sintering process, CuO can react with CaO to form two intermediate compounds, CaCu₂O₃ and Ca₂CuO₃, which decompose into CaO and liquid phase during 1273-1323 K. In the dopant range of 0 ≤x ≤0.10, both electrical conductivity and density of the samples are increased by Ca-doping. The room temperature conductivity of CuY_0.94Ca_0.06O₂ is more than four orders of magnitude higher than that of CuYO₂.     

Preparation, structure and electrical conductivity of the pyrochlore-type phase Sm2Zr2O7 codoped with bivalent magnesium and trivalent dysprosium cations

The pyrochlore-type phases with the compositions of SmDy_1−xMg_xZr₂O_7−x/2 (0 ≤ x ≤ 0.20) have been prepared by pressureless-sintering method for the first time as possible solid electrolytes. The structure and electrical conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics have been studied by the X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance spectroscopy measurements. SmDy_1−xMg_xZr₂O_7−x/2 (x = 0, 0.05, 0.10) ceramics exhibit a single phase of pyrochlore-type structure, and SmDy_1−xMg_xZr₂O_7−x/2 (x = 0.15, 0.20) ceramics consist of pyrochlore phase and a small amount of the second phase magnesia. The total conductivity of SmDy_1−xMg_xZr₂O_7−x/2 ceramics obeys the Arrhenius relation, and the total conductivity of each composition increases with increasing temperature from 673 to 1173 K. SmDy_1−xMg_xZr₂O_7−x/2 ceramics are oxide-ion conductors in the oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The highest total conductivity value is about 8 × 10⁻³ S cm⁻¹ at 1173 K for SmDy_1−xMg_xZr₂O_7−x/2 ceramics.     

Synthesis and thermoelectric properties of the PbSe1−xTex alloys

The PbSe_1−xTe_x alloys with x = 0.2, 0.3, 0.5, 0.85 and 1.0 were prepared by induction melting, ball milling and spark plasma sintering techniques. The thermoelectric properties of the samples were investigated. The XRD analysis indicated that all samples are NaCl-type structure solid solutions Pb(Se,Te) containing nanograins. Increasing Te content resulted in increasing the lattice parameter a. The thermoelectric measurements show that all samples are n-type semiconductors in temperature range from 300 K to 673 K. The electrical resistivity of the doped sample is much smaller than that of pure PbSe, but comparable to that of PbTe. The absolute Seebeck coefficients for the doped sample PbSe_1−xTe_x with x = 0.2, 0.3 and 0.5 range from 150 μV/K at 300 K to 250 μV/K at 673 K, which is much larger than that of pure PbSe (66-138 μV/K), but smaller than that of PbTe (230-310 μV/K) in the same experimental conditions. The thermal conductivity for the doped sample PbSe_1−xTe_x with x = 0.2, 0.3 and 0.5 range from 0.95 to 0.66 W/m K, which is much smaller than that of pure PbSe (2.1-1.3 W/m K) or PbTe (1.4-1.1 W/m K). As a result, the figure of merit for the doped sample can be enhanced. The maximum dimensionless figure of merit ZT of 1.15 was obtained in the sample PbTe_0.5Se_0.5 at 573 K, more than 50% higher than that of pure PbTe prepared in the same condition.     

Part II. Large scale applications of NixMn0.8−xMg0.2Fe2O4; 0.1 ≤ x ≤ 0.35 using laser irradiation

Ni_xMn_0.8−xMg_0.2Fe₂O₄; 0.1 ≤ x ≤ 0.35 was prepared by standard ceramic technique at sintering temperature 1200 °C using heating / cooling rate 4 °C/min. The samples were irradiated by Nd YAG pulsed laser with energy of the pulse 250 mJ. X-ray diffractograms reveal cubic spinel structure for all the samples before and after laser irradiation. After laser irradiation, better crystallinity was obtained in a form of an increase in the calculated crystal size. This increase was discussed as due to the change in the valence of some ions like Fe³⁺, Ni²⁺ and Mn²⁺. The conductivity of all the investigated samples decreases after laser irradiation and becomes temperature independent for a wider range than that before irradiation. This was ascribed to electron rearrangement after laser irradiation. Accordingly, these ferrites are recommended to be useful in electronic devices.     

Effect of Ni substitution on the structural and transport properties of NixMn0.8−xMg0.2Fe2O4; 0.0 ≤ x ≤ 0.40 ferrite

Ni_xMn_0.8−xMg_0.2Fe₂O₄; 0.0≤ x ≤0.40 was prepared by standard ceramic technique, presintering was carried out at 900 °C and final sintering at 1200 °C with heating/cooling rate 4 °C/min. X-ray diffraction analyses assured the formation of the samples in a single phase spinel cubic structure. The calculated crystal size was obtained in the range of 75-130 nm. A slight increase in the theoretical density and decrease in the porosity was obtained with increasing the nickel content. This result was discussed based on the difference in the atomic masses between Ni (58.71) and Mn (54.938). IR spectral analyses show four bands of the spinel ferrite for all the samples. The conductivity and dielectric loss factor give nearly continuous decrease with increasing Ni-content. This was discussed as the result of the significant role of the multivalent cations, such as iron, nickel, manganese, in the conduction mechanism. Anomalous behavior was obtained for the sample with x = 0.20 as highest dielectric constant, highest dielectric loss and highest conductivity. This anomalous behavior was explained due to the existence of two divalent cations on B-sites with the same ratio, namely, Mg²⁺ and Ni²⁺.     

Electrical, magnetic, and Hall properties of AlxCoCrFeNi high-entropy alloys

This investigation explores the electrical and magnetic properties of as-cast, -homogenized, and -deformed Al_xCoCrFeNi (C-x, H-x, and D-x, respectively) alloys at various temperatures from 4.2 to 300 K. Experimental results reveal that carrier density of the alloys is of 10^22-23 cm⁻³. H-x has a carrier mobility of 0.40-2.61 cm² V⁻¹ s⁻¹. The residual electrical resistivity of the alloys varies from 100 to 220 μΩ cm. The temperature coefficient of resistivity (TCR) of H-2.00 is small (82.5 ppm/K). Therefore, defects in the lattice dominate electrical transportation. Some compositions exhibit Kondo-like behavior. At 300 K, H-0.50, H-1.25, and H-2.00 are ferromagnetic, while H-0.00, H-0.25, and H-0.75 are paramagnetic. Al and AlNi-rich phases reduce the ferromagnetism of single FCC and single BCC H-x, respectively. Spin glass behavior of some compositions is also observed. Alloys H-x are of the hole-like carrier type, and ferromagnetic H-x exhibits an anomalous Hall effect (AHE).